features z low frequency power amplifier application z power switching application maximum ratings (t a =25 unless otherwise noted) symbol parameter value units v cbo collector-base voltage -50 v v ceo collector-emitter voltage -50 v v ebo emitter-base voltage -5 v i c collector current ?continuous 150 ma p c* collector power dissipation 100 mw t j junction temperature 150 t stg storage temperature -55-150 electrical characteristics (tamb=25 unless otherwise specified) parameter symbol test conditions min typ max unit collector-base breakdown voltage v (br)cbo i c =- 0.1ma, i e =0 -50 v collector-emitter breakdown voltage v (br)ceo i c = -1ma, i b =0 -50 v emitter-base breakdown voltage v (br)ebo i e =-0.1ma, i c =0 -5 v collector cut-off current i cbo v cb =-50v, i e =0 -0.1 a emitter cut-off current i ebo v eb = -5v, i c =0 -0.1 a dc current gain h fe v ce =-6v,i c =-2ma 70 400 collector-emitter saturation voltage v ce (sat) i c =-100ma, i b = -10ma -0.3 v transition frequency f t v ce =-10v, i c =-1ma, 80 mhz collector output capacitance c ob v cb =-10v, i e =0 f=1mhz 7 pf noise figure nf v ce =-6v, i c =-0.1ma f=1khz,rg=10k ? 10 db classification of h fe rank o(2) y(4) gr(6) range 70-140 120-240 200-400 marking so sy sg so t -323 1. base 2. emitter 3. collector KTA2014 transistor (pnp) 1 date:2011/05 www.htsemi.com semiconductor jinyu
typical characteristics KTA2014 2 date:2011/05 www.htsemi.com semiconductor jinyu
KTA2014 3 date:2011/05 www.htsemi.com semiconductor jinyu
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