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Datasheet File OCR Text: |
inchange semiconductor isc product specification isc silicon npn power transistor 2SC790 description low collector saturation voltage- : v ce( sat ) = 1.4(v)(max)@ i c = 2a dc current gain- : h fe = 40-240 @ i c = 0.5a complement to type 2sa490 applications designed for power amplifier applications. absolute maximum ratings(t a =25 ) symbol parameter value unit v cbo collector-base voltage 50 v v ceo collector-emitter voltage 40 v v ebo emitter-base voltage 5 v i c collector current-continuous 3 a i e emitter current-continuous -3 a p c total power dissipation @ t c =25 25 w t j junction temperature 150 t stg storage temperature range -55~150 isc website www.iscsemi.cn
inchange semiconductor isc product specification isc silicon npn power transistor 2SC790 electrical characteristics t c =25 unless otherwise specified symbol parameter conditions min typ. max unit v (br)ceo collector-emitter breakdown voltage i c = 50ma; i b = 0 40 v v (br)ebo emitter-base breakdown voltage i e = 10ma; i c = 0 5 v v ce (sat) collector-emitter saturation voltage i c = 2a; i b = 0.2a b 1.4 v v be (on) base-emitter on voltage i c = 2a; v ce = 2v 1.8 v i cbo collector cutoff current v cb = 30v; i e = 0 10 a i ebo emitter cutoff current v eb = 5v; i c = 0 100 a h fe-1 dc current gain i c = 0.5a; v ce = 2v 40 240 h fe-2 dc current gain i c = 2a; v ce = 2v 13 f t current-gain?bandwidth product i c = 0.5a; v ce = 2v 3 mhz c ob collector output capacitance i e = 0; v cb = 10v; f= 1mhz 70 pf ? h fe- 1 classifications r o y 40-80 70-140 120-240 isc website www.iscsemi.cn 2 |
Price & Availability of 2SC790
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