200a phase control thyristors stud version st180s series 1 bulletin i25165 rev. b 01/94 www.irf.com features center amplifying gate hermetic metal case with ceramic insulator (also available with glass-metal seal up to 1200v) international standard case to-209ab (to-93) threaded studs unf 3/4 - 16unf2a or iso m16x1.5 compression bonded encapsulation for heavy duty operations such as severe thermal cycling typical applications dc motor controls controlled dc power supplies ac controllers i t(av) 200 a @ t c 85 c i t(rms) 314 a i tsm @ 50hz 5000 a @ 60hz 5230 a i 2 t@ 50hz 125 ka 2 s @ 60hz 114 ka 2 s v drm /v rrm 400 to 2000 v t q typical 100 s t j - 40 to 125 c parameters st180s units major ratings and characteristics case style to-209ab (to-93)
st180s series 2 bulletin i25165 rev. b 01/94 www.irf.com electrical specifications voltage ratings voltage v drm /v rrm , max. repetitive v rsm , maximum non- i drm /i rrm max. type number code peak and off-state voltage repetitive peak voltage @ t j = t j max vvma 04 400 500 08 800 900 12 1200 1300 16 1600 1700 18 1800 1900 20 2000 2100 st180s 30 i t(av) max. average on-state current 200 a 180 conduction, half sine wave @ case temperature 85 c i t(rms) max. rms on-state current 314 a dc @ 76c case temperature i tsm max. peak, one-cycle 5000 t = 10ms no voltage non-repetitive surge current 5230 t = 8.3ms reapplied 4200 t = 10ms 100% v rrm 4400 t = 8.3ms reapplied sinusoidal half wave, i 2 t maximum i 2 t for fusing 125 t = 10ms no voltage initial t j = t j max. 114 t = 8.3ms reapplied 88 t = 10ms 100% v rrm 81 t = 8.3ms reapplied i 2 ? t maximum i 2 ? t for fusing 1250 ka 2 ? s t = 0.1 to 10ms, no voltage reapplied v t(to)1 low level value of threshold voltage v t(to) 2 high level value of threshold voltage r t1 low level value of on-state slope resistance r t2 high level value of on-state slope resistance v tm max. on-state voltage 1.75 v i pk = 570a, t j = 125c, t p = 10ms sine pulse i h maximum holding current 600 i l max. (typical) latching current 1000 (300) 1.08 (16.7% x p x i t(av) < i < p x i t(av) ), t j = t j max. 1.18 (16.7% x p x i t(av) < i < p x i t(av) ), t j = t j max. 1.14 (i > p x i t(av) ),t j = t j max. parameter st180s units conditions 1.14 (i > p x i t(av) ),t j = t j max. on-state conduction ka 2 s v m w ma t j = t j max, anode supply 12v resistive load a di/dt max. non-repetitive rate of rise gate drive 20v, 20 w , t r 1s of turned-on current t j = t j max, anode voltage 80% v drm gate current 1a, di g /dt = 1a/s v d = 0.67% v drm , t j = 25c i tm = 300a, t j = t j max, di/dt = 20a/s, v r = 50v dv/dt = 20v/s, gate 0v 100 w, t p = 500s parameter st180s units conditions t d typical delay time 1.0 switching t q typical turn-off time 100 s 1000 a/s
st180s series 3 bulletin i25165 rev. b 01/94 www.irf.com dv/dt maximum critical rate of rise of off-state voltage i drm max. peak reverse and off-state i rrm leakage current blocking 500 v/s t j = t j max linear to 80% rated v drm parameter st180s units conditions 30 ma t j = t j max, rated v drm /v rrm applied p gm maximum peak gate power 10 t j = t j max, t p 5ms p g(av) maximum average gate power 2.0 t j = t j max, f = 50hz, d% = 50 i gm max. peak positive gate current 3.0 a t j = t j max, t p 5ms +v gm maximum peak positive gate voltage -v gm maximum peak negative gate voltage i gt dc gate current required t j = - 40c to trigger ma t j = 25c t j = 125c v gt dc gate voltage required t j = - 40c to trigger v t j = 25c t j = 125c i gd dc gate current not to trigger 10 ma parameter st180s units conditions 20 5.0 triggering v gd dc gate voltage not to trigger 0.25 v t j = t j max typ. max. 180 - 90 150 40 - 2.9 - 1.8 3.0 1.2 - max. gate current/ voltage not to trigger is the max. value which will not trigger any unit with rated v drm anode-to-cathode applied max. required gate trigger/ cur- rent/ voltage are the lowest value which will trigger all units 12v anode-to-cathode applied w vt j = t j max, t p 5ms t j max. operating temperature range -40 to 125 t stg max. storage temperature range -40 to 150 r thjc max. thermal resistance, junction to case r thcs max. thermal resistance, case to heatsink t mounting torque, 10% 31 (275) 24.5 (210) wt approximate weight 280 g case style to - 209ab (to-93) see outline table parameter st180s units conditions 0.105 dc operation 0.04 mounting surface, smooth, flat and greased thermal and mechanical specification c k/w nm (lbf-in) lubricated threads non lubricated threads
st180s series 4 bulletin i25165 rev. b 01/94 www.irf.com d r thjc conduction (the following table shows the increment of thermal resistence r thjc when devices operate at different conduction angles than dc) 180 0.015 0.012 t j = t j max. 120 0.019 0.020 90 0.025 0.027 k/w 60 0.036 0.037 30 0.060 0.060 conduction angle sinusoidal conduction rectangular conduction units conditions ordering information table 5 1 2 3 4 st 18 0 s 20 p 0 7 6 89 device code 1 - thyristor 2 - essential part number 3 - 0 = converter grade 4 - s = compression bonding stud 5 - voltage code: code x 100 = v rrm (see voltage rating table) 6 - p = stud base 16unf threads m = stud base metric threads (m16 x 1.5) 7 - 0 = eyelet terminals (gate and auxiliary cathode leads) 1 = fast - on terminals (gate and auxiliary cathode leads) 2 = flag terminals (for cathode and gate terminals) 8 - v = glass-metal seal (only up to 1200v) none = ceramic housing (over 1200v) 9 - critical dv/dt: none = 500v/sec (standard value) l = 1000v/sec (special selection)
st180s series 5 bulletin i25165 rev. b 01/94 www.irf.com fast-on terminals case style to-209ab (to-93) all dimensions in millimeters (inches) outline table 2 white shrink red shrink red cathode red silicon rubber +i 210 (8.26) 10 (0.39) c.s. 0.4mm (0.0006 s.i.) max. 90 (3.54) min. 4.3 (0.17) dia. 19 (0.75) max. 38 .5 ( 1 .5 2 ) max. 16 (0.63) m ax. 8.5 (0.33) dia. + - glass metal seal 28.5 (1.12) max. dia. 220 (8.66) 10 (0.39) * for metric device : m16 x 1.5 - lenght 21 (0.83) max. sw 32 c.s. 25mm 2 (0.039 s.i.) flexible lead 4 (0.16) max. 2 2 ( 0 . 8 6 ) m i n . 35 (1.38) max. 3/4"-16unf-2a * 27.5 (1.08) 9 . 5 ( 0 . 3 7 ) m i n . white gate 2 white shrink red shrink red cathode red silicon rubber +i 210 (8.26) 10 (0.39) c.s. 0.4mm (0.0006 s.i.) 38.5 (1.52) max. + - 220 (8.66) 10 (0.39) ceramic housing 90 (3.54) min. 4.3 (0.17) dia. 19 (0.75) max. 8.5 (0.33) dia. * for metric device : m16 x 1.5 - lenght 21 (0.83) max. c.s. 25mm 2 (0.039 s.i.) flexible lead 4 (0.16) max. 2 2 ( 0 . 8 6 ) mi n . ma x. 35 (1.38) max. 3/4"-16unf-2a * 27.5 (1.08) sw 32 27.5 (1.08) max. dia. white gate 9 . 5 ( 0 . 3 7 ) mi n . 16 (0.63) max. amp. 280000-1 ref-250
st180s series 6 bulletin i25165 rev. b 01/94 www.irf.com outline table case style to-209ab (to-93) flag all dimensions in millimeters (inches) glass-metal seal 27 .5 (1 .0 8) max . 38.5 (1.5 2) m ax . 3 (0.12) 80 (3.1 5) max . dia. 28.5 (1.12) max. flag terminals 1.5 (0.06) dia. sw 32 22 (0.89) dia. 6.5 (0.25) 13 (0.51 ) 14 (0.55) 1 6 (0.63) ma x. 3/4"-16unf-2a* *for metric device. m16 x 1.5 - lenght 21 (0.83) max. ceramic housing 27.5 (1.08) max. 38.5 (1.52) max. 3 (0.12) 80 (3.15) max. dia. 27.5 (1.08) max. 16 (0.63) max. flag terminals 1.5 (0.06) dia. sw 32 22 (0.89) dia. 6.5 (0.25) 13 ( 0.5 1) 14 (0.55) *for metric device. m16 x 1.5 - lenght 21 (0.83) max. 3/4"-16unf-2a*
st180s series 7 fig. 4 - on-state power loss characteristics fig. 3 - on-state power loss characteristics 80 90 100 110 120 130 0 40 80 120 160 200 240 maximum allowable case temperature ( c) 30 60 90 120 180 average on-state current (a) conduction angle st180s series r (dc) = 0.105 k/w thjc 70 80 90 100 110 120 130 0 50 100 150 200 250 300 350 dc 30 60 90 120 180 average on-state current (a) maximum allowable case temperature ( c) conduction period st180s ser ies r (dc) = 0.105 k/w thjc fig. 2 - current ratings characteristics fig. 1 - current ratings characteristics 25 50 75 100 125 maximum allowable ambient temperature ( c) r = 0 . 0 8 k / w - d e l t a r t h s a 0 . 1 k / w 0 . 1 6 k / w 0 . 2 k / w 0 . 3 k / w 0 . 4 k / w 0 . 5 k / w 0 . 8 k / w 1 . 2 k / w 0 50 100 150 200 250 300 350 0 40 80 120 160 200 240 180 120 90 60 30 rms limit conduction angle maximum average on-state power loss (w) average on -state curr en t (a) st180s series t = 125c j 25 50 75 100 125 maximum allowable ambient temperature ( c) r = 0 . 0 8 k / w - d e l t a r t h s a 0 . 1 k / w 0 . 1 6 k / w 0 . 2 k / w 0 . 3 k / w 0 . 4 k / w 0 . 5 k / w 0 . 8 k / w 1 . 2 k / w 0 50 100 150 200 250 300 350 400 450 500 0 40 80 120 160 200 240 280 320 dc 180 120 90 60 30 rms limit conduction period maximum average on-state power loss (w) average on-state current (a) st180s series t = 125c j
st180s series 8 2000 2400 2800 3200 3600 4000 4400 4800 1 10 100 numb er of eq ua l amplitude ha lf cycle current pulses (n) peak half sine wave on-state current (a) in itial t = 125 c @ 60 hz 0.0083 s @ 50 hz 0.0100 s j st180s series at any rated load condition and with rated v applied following surge. rrm fig. 5 - maximum non-repetitive surge current fig. 6 - maximum non-repetitive surge current 2000 2500 3000 3500 4000 4500 5000 5500 0.01 0.1 1 pulse train d urat ion (s) versus pulse train duration. control peak half sine wave on-state current (a) initial t = 125 c no voltage reapplied rated v reapplied rrm j st180s series maximum non repetitive surge current of conduction may not be maintained. 100 1000 10000 0. 5 1 1.5 2 2.5 3 3.5 4 4. 5 5 5.5 6 t = 25 c j instantaneous on-state current (a) instantaneous on-state voltage (v) t = 125c j st180s series 0.001 0.01 0.1 1 0.001 0.01 0.1 1 10 square wav e pulse duration (s) thjc transient thermal impedance z (k/w) st180s series steady state v alue r = 0.105 k/w (dc operation) thjc fig. 8 - thermal impedance z thjc characteristic fig. 7 - on-state voltage drop characteristics
st180s series 9 fig. 9 - gate characteristics 0.1 1 10 100 0. 001 0.01 0.1 1 10 100 vgd igd (b) (a) tj=25 c tj=125 c tj=-40 c (1) (2) (3) instantaneous gate current (a) instantaneous gate voltage (v) rectangular gate pulse a) recommended load line for b) recommended load line for <=30% rated di/dt : 10v, 10ohms frequency limited by pg(av) rated di/dt : 20v , 10ohms; tr<=1 s tr<=1 s (1) pgm = 10w, tp = 4ms (2) pgm = 20w, tp = 2ms (3) pgm = 40w, tp = 1ms (4) pgm = 60w, tp = 0.66ms device: st180s ser ies (4)
|
