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parameter max. units v ds drain- source voltage -30 v i d @ t a = 25c continuous drain current, v gs @ -4.5v -4.0 i d @ t a = 70c continuous drain current, v gs @ -4.5v -3.2 a i dm pulsed drain current -32 p d @t a = 25c power dissipation 2.0 p d @t a = 70c power dissipation 1.3 linear derating factor 0.016 w/c e as single pulse avalanche energy 20.6 mj v gs gate-to-source voltage 20 v t j, t stg junction and storage temperature range -55 to + 150 c 01/13/03 parameter max. units r ja maximum junction-to-ambient 62.5 c/w thermal resistance
www.irf.com 1 IRF5800 hexfet power mosfet these p-channel mosfets from international rectifier utilize advanced processing techniques to achieve the extremely low on-resistance per silicon area. this benefit provides the designer with an extremely efficient device for use in battery and load management applications. the tsop-6 package with its customized leadframe produces a hexfet power mosfet with r ds(on) 60% less than a similar size sot-23. this package is ideal for applications where printed circuit board space is at a premium. it's unique thermal design and r ds(on) reduction enables a current-handling increase of nearly 300% compared to the sot-23. v dss = -30v r ds(on) = 0.085 ? description ultra low on-resistance p-channel mosfet surface mount available in tape & reel low gate charge top view 1 2 d g a d d d s 3 4 5 6 pd - 93850a tsop-6
2 www.irf.com parameter min. typ. max. units conditions i s continuous source current mosfet symbol (body diode) showing the i sm pulsed source current integral reverse (body diode) p-n junction diode. v sd diode forward voltage ??? ??? -1.2 v t j = 25c, i s = -2.0a, v gs = 0v t rr reverse recovery time ??? 19 28 ns t j = 25c, i f = -2.0a q rr reverse recovery charge ??? 16 24 nc di/dt = -100a/s source-drain ratings and characteristics 32 2.0 s d g repetitive rating; pulse width limited by max. junction temperature. pulse width 300s; duty cycle surface mounted on fr-4 board, t
starting t j = 25c, l = 2.5mh r g = 25 ? , i as = -4.0a. (see fig 10 ) parameter min. typ. max. units conditions v (br)dss drain-to-source breakdown voltage -30 ??? ??? v v gs = 0v, i d = -250a ? v (br)dss / ? t j breakdown voltage temp. coefficient ??? 0.02 ??? v/c reference to 25c, i d = 1ma ??? ??? 0.085 v gs = -10v, i d = -4.0a ??? ??? 0.150 v gs = -4.5v, i d = -3.0a v gs(th) gate threshold voltage -1.0 ??? ??? v v ds = v gs , i d = -250a g fs forward transconductance 3.5 ??? ??? s v ds = -10v, i d = -4.0a ??? ??? -1.0 v ds = -24v, v gs = 0v ??? ??? -5.0 v ds = -24v, v gs = 0v, t j = 70c gate-to-source forward leakage ??? ??? -100 v gs = -20v gate-to-source reverse leakage ??? ??? 100 v gs = 20v q g total gate charge ??? 11.4 17 i d = -4.0a q gs gate-to-source charge ??? 2.3 ??? nc v ds = -16v q gd gate-to-drain ("miller") charge ??? 2.2 ??? v gs = -10v t d(on) turn-on delay time ??? 11.4 17 v dd = -15v, v gs = -10v t r rise time ??? 11 17 i d = -1.0a t d(off) turn-off delay time ??? 24 36 r g = 6.0 ? t f fall time ??? 14 20 r d = 15 ? , c iss input capacitance ??? 535 ??? v gs = 0v c oss output capacitance ??? 94 ??? pf v ds = -25v c rss reverse transfer capacitance ??? 68 ??? ? = 1.0mhz electrical characteristics @ t j = 25c (unless otherwise specified) i gss ? r ds(on) static drain-to-source on-resistance i dss drain-to-source leakage current

www.irf.com 3 fig 4. normalized on-resistance vs. temperature fig 2. typical output characteristics fig 1. typical output characteristics fig 3. typical transfer characteristics 0.01 0.1 1 10 100 0.1 1 10 100 20s pulse width t = 25 c j top bottom vgs -15v -10v -7.0v -5.5v -4.5v -4.0v -3.5v -2.7v -v , drain-to-source voltage (v) -i , drain-to-source current (a) ds d -2.70v 0.01 0.1 1 10 100 0.1 1 10 100 20s pulse width t = 150 c j top bottom vgs -15v -10v -7.0v -5.5v -4.5v -4.0v -3.5v -2.7v -v , drain-to-source voltage (v) -i , drain-to-source current (a) ds d -2.70v 0.1 1 10 100 2.0 3.0 4.0 5.0 6.0 7.0 8.0 v = -15v 20s pulse width ds -v , gate-to-source voltage (v) -i , drain-to-source current (a) gs d t = 25 c j t = 150 c j -60 -40 -20 0 20 40 60 80 100 120 140 160 0.0 0.5 1.0 1.5 2.0 t , junction temperature ( c) r , drain-to-source on resistance (normalized) j ds(on) v = i = gs d -10v -4.0a
4 www.irf.com fig 8. maximum safe operating area fig 6. typical gate charge vs. gate-to-source voltage fig 5. typical capacitance vs. drain-to-source voltage fig 7. typical source-drain diode forward voltage 1 10 100 0 200 400 600 800 -v , drain-to-source voltage (v) c, capacitance (pf) ds v c c c = = = = 0v, c c c f = 1mhz + c + c c shorted gs iss gs gd , ds rss gd oss ds gd c rss c oss c iss 0 4 8 12 16 20 0 4 8 12 16 20 q , total gate charge (nc) -v , gate-to-source voltage (v) g gs for test circuit see figure i = d 13 -4.0a v = -16v ds 0.1 1 10 100 0.4 0.8 1.2 1.6 2.0 -v ,source-to-drain voltage (v) -i , reverse drain current (a) sd sd v = 0 v gs t = 25 c j t = 150 c j 0.1 1 10 100 1000 1 10 100 operation in this area limited by r ds(on) single pulse t t = 150 c = 25 c j c -v , drain-to-source voltage (v) -i , drain current (a) i , drain current (a) ds d 10us 100us 1ms 10ms
www.irf.com 5 fig 11. maximum effective transient thermal impedance, junction-to-ambient fig 9. maximum drain current vs. case temperature fig 10. maximum avalanche energy vs. drain current 25 50 75 100 125 150 0.0 1.0 2.0 3.0 4.0 t , case temperature ( c) -i , drain current (a) c d 25 50 75 100 125 150 0 10 20 30 40 50 starting t , junction temperature ( c) e , single pulse avalanche energy (mj) j as i d top bottom -1.8a -2.5a -4.0a 0.1 1 10 100 0.00001 0.0001 0.001 0.01 0.1 1 10 notes: 1. duty factor d = t / t 2. peak t = p x z + t 1 2 j dm thja a p t t dm 1 2 t , rectangular pulse duration (sec) thermal response (z ) 1 thja 0.01 0.02 0.05 0.10 0.20 d = 0.50 single pulse (thermal response)
6 www.irf.com fig 13. typical on-resistance vs. drain current fig 12. typical on-resistance vs. gate voltage 2.0 4.0 6.0 8.0 10.0 12.0 14.0 16.0 -v gs, gate -to -source voltage (v) 0.04 0.08 0.12 0.16 0.20 r d s ( o n ) , d r a i n - t o - s o u r c e o n r e s i s t a n c e ( ? ) i d = -4.0a 0 5 10 15 20 -i d , drain current (a) 0.00 0.05 0.10 0.15 0.20 0.25 r d s ( o n ) , d r a i n - t o - s o u r c e o n r e s i s t a n c e ( ? ) v gs = -10v v gs = -4.5v
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8 www.irf.com world headquarters: 233 kansas st., el segundo, california 90245, tel: (310) 252-7105 ir great britain: hurst green, oxted, surrey rh8 9bb, uk tel: ++ 44 1883 732020 ir canada: 15 lincoln court, brampton, ontario l6t3z2, tel: (905) 453 2200 ir germany: saalburgstrasse 157, 61350 bad homburg tel: ++ 49 6172 96590 ir italy: via liguria 49, 10071 borgaro, torino tel: ++ 39 11 451 0111 ir japan: k&h bldg., 2f, 30-4 nishi-ikebukuro 3-chome, toshima-ku, tokyo japan 171 tel: 81 3 3983 0086 ir southeast asia: 1 kim seng promenade, great world city west tower, 13-11, singapore 237994 tel: ++ 65 838 4630 ir taiwan: 16 fl. suite d. 207, sec. 2, tun haw south road, taipei, 10673, taiwan tel: 886-2-2377-9936 data and specifications subject to change without notice. 1/03
ww = (1-26) if pre ce de d by last digit of calendar ye ar 01 02 03 04 24 w year y a 2001 1 b 2002 2 c 2003 3 d 2004 4 x 1999 0 ww = (27-52) if pre ce de d by a let t e r we e k 27 28 29 30 50 w year a 2001 a b 2002 b c 2003 c d 2004 d x j 2005 1996 1997 1998 1999 2000 e f g h k y 2005 1996 1997 1998 2000 9 8 7 6 5 part numbe r top work we e k work 3a = s i3443dv part number code reference: 25 y 51 y 26 z 3b = ir f 5800 3c = irf 5850 3d = irf 5851 3e = irf 5852 3j = ir f 5806 3i = ir f5805 dat e code date code examples: yww = 9603 = 6c yww = 9632 = f f waf e r l ot numb e r code bottom example : t his is an s i3443dv notes : t his part marking information applies to devices produced before 02/26/2001 50 51 30 27 28 29 we e k wor k w = (27-52) if pre ce ded b y a le t t e r 25 26 24 03 02 04 we e k wor k 01 w = (1-26) if pre ce de d by last digit of calendar year part number code reference: l = irf5804 m = i r f 5 8 0 3 n = irf 5820 c = irf 5850 j = irf 5806 k = irf 5810 e = irf5852 d = irf 5851 i = ir f5805 b = irf 5800 a = s i3443dv h 1998 2000 1999 k j b 2002 2005 1996 1997 2003 2004 e f g c d 2001 ye ar a y part number top 2001 1 y = year code lot w = we e k 7 1997 2000 1999 1998 0 9 8 2004 2005 1996 2002 2003 4 6 5 2 3 ye ar y y x b c d a w a x z y d b c w notes : t his part marking information applies to devices produced after 02/26/2001

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