af1333p p-channel enhan cement mode power mosfet this datasheet contains new product information. anachip corp. re serves the rights to modify the product specification without notice. no liability is assumed as a result of the use of this product. no rights under any patent accompany the sale of the product. rev. 1.0 oct 15, 2004 1/5 ? features - simple gate drive - fast switching speed - small package outline (sot323) ? product summary bv dss = -20v r ds (on) = 800m ? . i d = -550ma ? pin assignments 3 2 1 (top view) 1. g 2. s 3. d ? description the advanced power mosfet provides the designer with the best combination of fast switching, low on-resistance and cost-effectiveness. ? pin descriptions pin no. pin name description 1 g gate 2 s source 3 d drain ? ordering information a x 1333p x x x pn package feature f :mosfet u: sot323 lead free blank : normal l : lead free package packing blank : tube or bulk a : tape & reel ? block diagram s g d
af1333p p-channel enhan cement mode power mosfet anachip corp. www.anachip.com.tw rev. 1.0 oc t 15, 2004 2/5 ? absolute maxi mum ratings symbol parameter rating unit v ds drain-source voltage -20 v v gs gate-source voltage 12 v t a =25oc -550 i d continuous drain current (note 1) t a =70oc -440 ma i dm pulsed drain current (note 2, 3) -2.5 a total power dissipation t a =25oc 0.35 w p d linear derating factor 0.003 w/ o c t stg storage temperature range -55 to +150 o c t j operating junction temperature range -55 to +150 o c ? thermal data symbol parameter value unit rthj-a thermal resistance junction-ambient (note 1) max. 360 oc/w ? electrical characteristics at t a =25 o c (unless otherwise specified) symbol parameter test conditions min. typ. max. unit bv dss drain-source breakdown voltage v gs =0v, i d =-250ua -20 - - v ? bv dss / ? t j breakdown voltage temperature coefficient reference to 25 o c, i d =-1ma - 0.01 - v/ o c v gs =-10v, i d =-550ma - - 600 v gs =-4.5v, i d =-550ma - - 800 r ds(on) static drain-source on-resistance v gs =-2.5v, i d =-300ma - - 1000 m ? v gs(th) gate threshold voltage v ds =v gs , i d =-250ua -0.5 - -1.2 v g fs forward transconductance v ds =-5v, i d =-500ma - 1 - s drain-source leakage current (t j =25 o c) v ds =-20v, v gs =0v - - -1 i dss drain-source leakage current (t j =70 o c) v ds =-16v, v gs =0v - - -10 ua i gss gate-source leakage v gs =12v - - 100 na q g total gate charge (note 3) - 1.7 2.7 q gs gate-source charge - 0.3 - q gd gate-drain (?miller?) charge i d =-500ma, v ds =-16v, v gs =-4.5v - 0.4 - nc t d(on) turn-on delay time (note 3) - 5 - t r rise time - 8 - t d(off) turn-off delay time - 10 - t f fall-time v ds =-10v, i d =-500ma, r g =3.3 ? , v gs =-5v r d =20 ? - 2 - ns c iss input capacitance - 66 105.6 c oss output capacitance - 25 - c rss reverse transfer capacitance v gs =0v, v ds =-10v, f=1.0mhz - 20 - pf ? source-drain diode symbol parameter test conditions min. typ. max. unit v ds forward on voltage (note 3) i s =-300ma, v gs =0v - - -1.2 v note 1: surface mounted on fr4 board, t 10 sec. note 2: pulse width limited by max. junction temperature. note 3: pulse width 300us, duty cycle 2%.
af1333p p-channel enhan cement mode power mosfet anachip corp. www.anachip.com.tw rev. 1.0 oc t 15, 2004 3/5 ? typical performance characteristics fig 1. typical output characteristics fig 2. typical output characteristics fig 3. on-resistance v.s. gate voltage fig 4. normalized on-resistance v.s. junction temperature fig 5. forward characteristic of reverse diode fig 6. gate threshold voltage v.s. junction temperature
af1333p p-channel enhan cement mode power mosfet anachip corp. www.anachip.com.tw rev. 1.0 oc t 15, 2004 4/5 ? typical performance charac teristics (continued) fig 7. gate charge characteristics fig 8. typical capacitance characteristics fig 9. maximum safe operating area fig 10. effective transient thermal impedance fig 11. switching time waveform fig 12. gate charge waveform
af1333p p-channel enhan cement mode power mosfet anachip corp. www.anachip.com.tw rev. 1.0 oc t 15, 2004 5/5 ? marking information 3x x sot323 (top view) part number: af1333p a~z: week: 27~52 or lot no: 1~9 a~z: week: 01~26 or lot no: 1~9 x x: year: 4 years in one cycle x x: 2004, 2008, 2012... x x: 2005, 2009, 2013... x x: 2006, 2010, 2014... x x: 2007, 2011, 2015... ? package information package type: sot323 e e1 e d1 d a a1 *dimension does not include mold protrusions. dimensions in millimeters dimensions in inches symbol min. nom. max. min. nom. max. a 0.90 1.00 1.10 0.035 0.039 0.043 a1 0.03 0.07 0.10 0.001 0.003 0.004 d 1.90 2.00 2.10 0.075 0.079 0.083 d1 0.20 0.30 0.40 0.008 0.012 0.016 e 2.00 2.10 2.20 0.079 0.083 0.087 e1 1.15 1.25 1.35 0.045 0.049 0.053 e 1.30 bsc. 0.051 bsc.
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