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august 1996 ndp7051 / NDB7051 n-channel enhancement mode field effect transistor general description features ________________________________________________________________________________ absolute maximum ratings t c = 25c unless otherwise noted symbol parameter ndp7051 NDB7051 units v dss drain-source voltage 50 v v dgr drain-gate voltage (r gs < 1 m w ) 50 v v gss gate-source voltage - continuous 20 v - nonrepetitive (t p < 50 s) 40 i d drain current - continuous 70 a - pulsed 210 p d maximum power dissipation @ t c = 25 c 130 w derate above 25 c 0.87 w/ c t j ,t stg operating and storage temperature range -65 to 175 c t l maximum lead temperature for soldering purposes, 1/8" from case for 5 seconds 275 c ndp7051 rev. d these n-channel enhancement mode power field effect transistors are produced using fairchild's proprietary, high cell density, dmos technology. this very high density process is especially tailored to minimize on-state resistance, provide superior switching performance, and withstand high energy pulses in the avalanche and commutation modes. these devices are particularly suited for low voltage applications such as automotive, dc/dc converters, pwm motor controls, and other battery powered circuits where fast switching, low in-line power loss, and resistance to transients are needed. 70a, 50v. r ds(on ) = 0.013 w @ v gs =10v . critical dc electrical parameters specified at elevated temperature. rugged internal source-drain diode can eliminate the need for an external zener diode transient suppressor. 175c maximum junction temperature rating. high density cell design for extremely low r ds(on) . to-220 and to-263 (d 2 pak) package for both through hole and surface mount applications. s d g ? 1997 fairchild semiconductor corporation
electrical characteristics (t c = 25c unless otherwise noted) symbol parameter conditions min typ max units w dss single pulse drain-source avalanche energy v dd = 25 v, i d = 70 a 500 mj i ar maximum drain-source avalanche current 70 a off characteristics bv dss drain-source breakdown voltage v gs = 0 v, i d = 250 a 50 v i dss zero gate voltage drain current v ds = 4 0 v, v gs = 0 v 10 a t j = 125c 1 ma i gssf gate - body leakage, forward v gs = 20 v, v ds = 0 v 100 na i gssr gate - body leakage, reverse v gs = -20 v, v ds = 0 v -100 na on characteristics (note 1) v gs (th) gate threshold voltage v ds = v gs , i d = 250 a 2 2.9 4 v t j = 125c 1.4 2.2 3.6 r ds(on) static drain-source on-resistance v gs = 10 v, i d = 35 a 0.011 0.013 w t j = 125c 0.018 0.023 i d (on) on-state drain current v gs = 10 v, v ds = 10 v 60 a g fs forward transconductance v ds = 10 v, i d = 35 a 30 s dynamic characteristics c iss input capacitance v ds = 25 v, v gs = 0 v, f = 1.0 mhz 1930 pf c oss output capacitance 870 pf c rss reverse transfer capacitance 310 pf switching ch aracteristics (note 1) t d(on) turn - on delay time v dd = 25 v, i d = 70 a, v gs = 10 v, r gen = 5 w 13 30 ns t r turn - on rise time 98 200 ns t d(off) turn - off delay time 36 80 ns t f turn - off fall time 65 150 ns q g total gate charge v ds = 48 v, i d = 70 a, v gs = 10 v 67 100 nc q gs gate-source charge 11 nc q gd gate-drain charge 38 nc ndp7051 rev. d
electrical characteristics (t c = 25c unless otherwise noted) symbol parameter conditions min typ max units drain-source diode characteristics i s maximum continuos drain-source diode forward current 70 a i sm maximum pulsed drain-source diode forward current 210 a v sd drain-source diode forward voltage v gs = 0 v, i s = 35 a ( note 1) 0.9 1.3 v t j = 125c 0.8 1.2 t rr reverse recovery time v gs = 0 v, i f = 70 a, di f /dt = 100 a/s 40 105 150 ns i rr reverse recovery current 2 4.5 10 a thermal characteristics r q jc thermal resistance, junction-to-case 1.15 c/w r q ja thermal resistance, junction-to-ambient 62.5 c/w note: 1. pulse test: pulse width < 300 s, duty cycle < 2.0%. ndp7051 rev. d
ndp7051 rev. d -50 -25 0 25 50 75 100 125 150 175 0.4 0.6 0.8 1 1.2 1.4 t , junction temperature (c) gate-source threshold voltage j v , normalized gs(th) i = 250a d v = v gs ds 0 20 40 60 80 100 0.5 1 1.5 2 2.5 3 i , drain current (a) drain-source on-resistance v = 5.0v gs d r , normalized ds(on) 7.0 6.0 10 20 12 8.0 0 20 40 60 80 100 0.5 0.75 1 1.25 1.5 1.75 2 i , drain current (a) drain-source on-resistance t = 125c j 25c -55c d v =10v gs r , normalized ds(on) 2 3 4 5 6 7 0 10 20 30 40 50 60 v , gate to source voltage (v) i , drain current (a) 25c 125c v = 10v ds gs d t = -55c j typical electrical characteristics figure 1. on-region characteristics. figure 2. on-resistance variation wit h gate voltage and drain current. figure 3. on-resistance variation with temperature. figure 4. on-resistance variation with drain current and temperature. figure 5. transfer characteristics. figure 6. gate threshold variation with temperature. 0 1 2 3 4 0 20 40 60 80 100 v , drain-source voltage (v) i , drain-source current (a) 8.0 v =20v gs ds d 6.0 12 7.0 4.5 5.0 10 -50 -25 0 25 50 75 100 125 150 175 0.5 0.75 1 1.25 1.5 1.75 2 t , junction temperature (c) drain-source on-resistance j v = 10v gs i = 35a d r , normalized ds(on)
ndp7051 rev. d -50 -25 0 25 50 75 100 125 150 175 0.9 0.95 1 1.05 1.1 1.15 t , junction temperature (c) drain-source breakdown voltage i = 250a d bv , normalized dss j 0.2 0.3 0.5 1 2 0.001 0.01 0.1 1 10 50 100 v , body diode forward voltage (v) i , reverse drain current (a) v = 0v gs t = 125c j 25c -55c sd s 0.1 0.2 0.5 1 2 5 10 20 50 200 300 500 1000 2000 3000 4000 5000 v , drain to source voltage (v) capacitance (pf) ds f = 1 mhz v = 0v gs c oss c iss c rss g d s v dd r l v v in out v gs dut r gen figure 7. breakdown voltage variation with temperature. figure 8. body diode forward voltage variation with current and temperature. figure 9. capacitance characteristics. figure 10. gate charge characteristics. figure 11. switching test circuit. figure 12. switching waveforms. typical electrical characteristics (continued) 0 20 40 60 80 100 120 0 5 10 15 20 q , gate charge (nc) v , gate-source voltage (v) g gs 48v i = 70a d v = 12v ds 24v 10% 50% 90% 10% 90% 90% 50% v in v out on off d(off) f r d(on) t t t t t t inverted 10% pulse width
ndp7051 rev. d 0 10 20 30 40 50 0 10 20 30 40 50 i , drain current (a) g , transconductance (siemens) t = -55c j 25c d fs v = 10v ds 125c figure 13. transconductance variation with drain current and temperature. figure 14 . maximum safe operating area. figure 15 . transient thermal response curve. typical electrical characteristics (continued) 0.01 0.05 0.1 0.5 1 5 10 50 100 1000 10000 0.01 0.02 0.03 0.05 0.1 0.2 0.3 0.5 1 t ,time (ms) transient thermal resistance single pulse d = 0.5 0.1 0.05 0.02 0.01 0.2 r(t), normalized effective 1 duty cycle, d = t / t 1 2 r (t) = r(t) * r r = 1.15 c/w q jc q jc q jc t - t = p * r (t) c j p(pk) t 1 t 2 q jc 1 2 3 5 10 20 50 80 0.5 1 2 5 10 20 50 100 200 300 v , drain-source voltage (v) i , drain current (a) ds d 10ms dc r limit ds(on) 50ms 1ms 100us 10us 500us v = 10v single pulse r = 1.15 c/w t = 25c gs c o q jc
to-220 tape and reel data and package dimensions august 1999, rev. b 0.165 to-220 tube packing configuration: figur e 1.0 note/comments packaging option to-220 packaging information stan da rd (no f l ow code ) packaging type rail/tube qty per tube/box 45 box dimension (mm) 530x 130x 83 max qty per box 1,080 weight per unit (gm) 1.4378 s62z bulk 300 114x 102x 51 1,500 1.4378
to-220 (fs pkg code 37) to-220 tape and reel data and package dimensions, continued september 1998, rev. a 1:1 scale 1:1 on letter size paper dimensions shown below are in: inches [millimeters] part weight per unit (gram): 1.4378
to-263ab/d 2 pak packaging configuration: figure 1.0 components to-263ab/d 2 pak tape leader and trailer configuration: figure 2.0 cover tape carrier tape note/comments packaging option to-263ab/d 2 pak packaging information standard (no flow code) l86z packaging type reel size tnr 13" dia rail/tube - qty per reel/tube/bag 800 45 box dimension (mm) 359x359x57 530x130x83 max qty per box 800 1,080 weight per unit (gm) 1.4378 1.4378 weight per reel 1.6050 - moisture sensitive label drypack bag esd label f63tnr label 359mm x 359mm x 57mm standard intermediate box to-263ab/d 2 pak unit orientation fdb603al f 9835 fdb603al f 9835 fdb603al f 9835 fdb603al f 9835 f63tnr label sample static dissipative embossed carrier tape
p1 a0 d1 p0 f w e1 d0 e2 b0 tc wc k0 t dimensions are in inches and millimeters tape size reel option dim a dim b dim c dim d dim n dim w1 dim w2 dim w3 (lsl-usl) 24mm 13" dia 13.00 330 0.059 1.5 512 +0.020/-0.008 13 +0.5/-0.2 0.795 20.2 4.00 100 0.961 +0.078/-0.000 24.4 +2/0 1.197 30.4 0.941 0.1.079 23.9 27.4 see detail aa dim a max 13" diameter option dim a max w3 w2 max measured at hub w1 measured at hub dim n dim d min dim c b min detail aa notes: a0, b0, and k0 dimensions are determined with respect to the eia/jedec rs-481 rotational and lateral movement requirements (see sketches a, b, and c). 10 deg maximum component rotation 0.9mm maximum 0.9mm maximum sketch c (top view) component lateral movement typical component cavity center line 10 deg maximum typical component center line b0 a0 sketch b (top view) component rotation sketch a (side or front sectional view) component rotation user direction of feed to-263ab/d 2 pak embossed carrier tape configuration: figure 3.0 to-263ab/d 2 pak reel configuration: figure 4.0 dimensions are in millimeter pkg type a0 b0 w d0 d1 e1 e2 f p1 p0 k0 t wc tc t d 2 pak o263ab/ (24mm) 10.60 +/-0.10 15.80 +/-0.10 24.0 +/-0.3 1.55 +/-0.05 1.60 +/-0.10 1.75 +/-0.10 22.25 min 11.50 +/-0.10 16.0 +/-0.1 4.0 +/-0.1 4.90 +/-0.10 0.450 +/-0.150 21.0 +/-0.3 0.06 +/-0.02 to-263ab/d 2 pak tape and reel data and package dimensions, continued august 1999, rev. b
to-263ab/d 2 pak (fs pkg code 45) to-263ab/d 2 pak tape and reel data and package dimensions, continued august 1998, rev. a 1:1 scale 1:1 on letter size paper dimensions shown below are in: inches [millimeters] part weight per unit (gram): 1.4378
trademarks acex? coolfet? crossvolt? e 2 cmos tm fact? fact quiet series? fast ? fastr? gto? hisec? the following are registered and unregistered trademarks fairchild semiconductor owns or is authorized to use and is not intended to be an exhaustive list of all such trademarks. life support policy fairchild?s products are not authorized for use as critical components in life support devices or systems without the express written approval of fairchild semiconductor corporation. as used herein: 1. life support devices or systems are devices or systems which, (a) are intended for surgical implant into the body, or (b) support or sustain life, or (c) whose failure to perform when properly used in accordance with instructions for use provided in the labeling, can be reasonably expected to result in significant injury to the user. 2. a critical component is any component of a life support device or system whose failure to perform can be reasonably expected to cause the failure of the life support device or system, or to affect its safety or effectiveness. product status definitions definition of terms datasheet identification product status definition advance information preliminary no identification needed obsolete this datasheet contains the design specifications for product development. specifications may change in any manner without notice. this datasheet contains preliminary data, and supplementary data will be published at a later date. fairchild semiconductor reserves the right to make changes at any time without notice in order to improve design. this datasheet contains final specifications. fairchild semiconductor reserves the right to make changes at any time without notice in order to improve design. this datasheet contains specifications on a product that has been discontinued by fairchild semiconductor. the datasheet is printed for reference information only. formative or in design first production full production not in production disclaimer fairchild semiconductor reserves the right to make changes without further notice to any products herein to improve reliability, function or design. fairchild does not assume any liability arising out of the application or use of any product or circuit described herein; neither does it convey any license under its patent rights, nor the rights of others. syncfet? tinylogic? uhc? vcx? isoplanar? microwire? pop? powertrench qfet? qs? quiet series? supersot?-3 supersot?-6 supersot?-8 ? rev. d

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