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profet ? data sheet bts 443 p infineon technologies ag page 1 of 13 2001-jan-23 smart highside power switch reversave reverse battery protection by self turn on of power mosfet features short circuit protection current limitation overload protection thermal shutdown overvoltage protection (including load dump) loss of ground protection loss of v bb protection (with external diode for charged inductive loads) very low standby current fast demagnetisation of inductive loads e lectro s tatic d ischarge ( esd ) protection optimized static e lectro m agnetic c ompatibility ( emc ) diagnostic function proportional load current sense (with defined fault signal while thermal shutdown) application power switch with current sense diagnostic feedback for 12v and 24 v dc grounded loads all types of resistive, capacitve and inductive loads (no pwm with inductive loads) replaces electromechanical relays, fuses and discrete circuits general description n channel vertical power fet with charge pump, current controlled input and diagnostic feedback with load current sense, integrated in smart sipmos chip on chip technology. fully protected by embedded protection functions. in charge pump level shifter rectifier limit for unclamped ind. loads gate protection current limit 2 overvoltage protection + v bb profet out 3 & tab 1, 5 load gnd load output voltage detection r is is 4 i is i l v is i in logic gnd voltage sensor voltage source current sense logic esd temperature sensor r bb v in product summary operating voltage v bb(on) 5.0 ... 36 v on-state resistance r on 16 m load current (iso) i l(iso) 25 a current limitation i l(scr) 65 a package to-252-5-1 (dpak 5 pin; less than half the size as to 220 smd)
data sheet bts 443 p infineon technologies ag page 2 of 13 2001-jan-23 pin symbol function 1outo output to the load. the pin 1 and 5 must be shorted with each other especially in high current applications!*) 2ini input, activates the power switch in case of short to ground tab/(3) v bb + positive power supply voltage, the tab is shorted to this pin. 4iss diagnostic feedback providing a sense current proportional to the load current; high current on failure (see truth table) 5outo output to the load. the pin 1 and 5 must be shorted with each other especially in high current applications!*) *) not shorting all outputs will considerably increase the on-state resistance, reduce the peak current capability and decrease the current sense accuracy maximum ratings at t j = 25 c unless otherwise specified parameter symbol values unit supply voltage (overvoltage protection see page 4) v bb 36 v supply voltage for full short circuit protection (see also diagram on page 9) t j =-40...150 c: v bb 24 1 ) v load dump protection v loaddump = u a + v s , u a = 13.5 v r i = 2 , r l = 2.7 , t d = 200 ms, in= low or high v load dump 2 ) 60 v load current (short-circuit current, see page 4) i l self-limited a operating temperature range storage temperature range t j t stg -40 ...+150 -55 ...+150 c power dissipation (dc) tc 25c p tot 42 w inductive load switch-off energy dissipation, single pulse u=12v, i=10a, l=3mh t j =150 c: e as 0.15 j electrostatic discharge capability (esd) (human body model) acc. esd assn. std. s5.1-1993; r=1.5k ; c=100pf v esd 4.0 kv current through input pin (dc) current through current sense pin (dc) see internal circuit diagrams page 7 i in i is +15, -100 +15, -100 ma 1 ) short circuit is tested with 100m and 20h 2) v load dump is set-up without the dut connected to the generator per iso 7637-1 and din 40839
data sheet bts 443 p infineon technologies ag page 3 of 13 2001-jan-23 thermal characteristics parameter and conditions symbol values unit min typ ma x thermal resistance chip - case : r thjc 3 ) -- -- 1.5 k/w junction - ambient (free air): r thja -- 80 -- smd version, device on pcb 4) :45 3) thermal resistance r thch case to heatsink (about 0.5 ... 0.9 k/w with silicone paste) not included! 4 ) device on 50mm*50mm*1.5mm epoxy pcb fr4 with 6cm 2 (one layer, 70 m thick) copper area for v bb connection. pcb is vertical without blown air. electrical characteristics parameter and conditions symbol values unit at t j = -40c...150c, v bb = 12 v unless otherwise specified min typ max load switching capabilities and characteristics on-state resistance (pin 3 to pin 1,5) v in = 0, i l = 5 a t j =25 c: t j =150 c: r on -- 13 25 16 31 m output voltage drop limitation at small load currents (tab to pin 1,5) t j =-40...150 c: v on(nl) -- 50 -- mv nominal load current (tab to pin 1,5) iso proposal: v on = 0.5 v, t c = 85 c i l(iso) 21 25 -- a turn-on time to 90% v out : turn-off time to 10% v out : r l = 2,5 , t j =-40...150 c t on t off 150 70 -- -- 410 410 s slew rate on 10 to 30% v out , r l = 2.5 t j =-40...150 c d v /dt on 0.1 -- 1 v/ s slew rate off 70 to 40% v out , r l = 2.5 t j =-40...150 c -d v /dt off 0.1 -- 1 v/ s
data sheet bts 443 p parameter and conditions symbol values unit at t j = -40c...150c, v bb = 12 v unless otherwise specified min typ max infineon technologies ag page 4 of 13 2001-jan-23 operating parameters operating voltage (v in =0) v bb(on) 5.0 -- 36 v undervoltage shutdown 5 ) v bin(u) 1.5 3.0 4.5 v undervolta g e restart of char g e pump v bb(ucp) 3.0 4.5 6.0 v overvoltage protection 6 ) i bb =15 ma v z,in 61 68 -- v standby current t j =-40...+25c : i in =0 t j =150c: i bb(off) -- -- 2 4 5 8 a protection functions short circuit current limit (tab to pin 1,5) v on = 12v, time until limitation max. 300s t j =-40c: t j =25c: t j =+150c: i l(sc) 35 35 35 75 65 65 110 110 125 a repetitive short circuit current limit, t j = t jt i l(scr) -- 65 -- a output clamp (inductive load switch off) at v out = v bb - v on(cl) (e.g. overvoltage) i l = 40 ma 7 ) v on(cl) 38 42 48 v thermal overload trip temperature t jt 150 -- -- c thermal hysteresis t jt -- 10 -- k reverse battery reverse battery voltage -v bb -- -- 20 v on-state resistance (pin 1,5 to pin 3) v bb = - 8v, v in = 0, i l = -5 a, r is = 1 k , t j =25 c: v bb = -12v, v in = 0, i l = -5 a, r is = 1 k , t j =25 c: t j =150 c: r on(rev) -- -- -- 16 25 22 19 32 m integrated resistor in v bb line r bb -- 200 -- 5) v bin =v bb -v in see diagram page 11. 6) see also v on(cl) in circuit diagram page 7. 7 ) see also page 9
data sheet bts 443 p parameter and conditions symbol values unit at t j = -40c...150c, v bb = 12 v unless otherwise specified min typ max infineon technologies ag page 5 of 13 2001-jan-23 diagnostic characteristics current sense ratio, static on-condition k ilis = i l : i is , v on < 1.5 v 8) , v is < v out - 5 v, v bin > 4.5 v k ilis -- 8200 -- il = 20a, t j = -40c: t j = +25c: tj = +150c: il = 5a, t j = -40c: t j = +25c: tj = +150c: il = 2.5a, t j = -40c: t j = +25c: tj = +150c: il = 1a, t j = -40c: t j = +25c: tj = +150c: 7400 7500 7500 6800 7200 7200 6800 6800 6800 6800 6800 6800 8300 8300 8200 8300 8300 8200 8500 8500 8100 8600 8600 8600 9100 9100 8800 9700 9300 9000 10000 9800 9200 10500 10500 10500 i in = 0 (e.g. during deenergising of inductive loads) : -- n.a. -- sense current under fault conditions; v ds >1.5v, typ. t j = -40...+150c: i is,fault 2.5 4 -- ma fault-sense signal delay after negative input slope t delay(fault) 0.8 ms current sense leakage current i in = 0: v in = 0, i l 0: i is(ll) i is(lh) -- -- -- 4 0.5 12 a current sense settling time to i is static 10% after positive input slope, i l = 0 20 a, t j = -40...+150c (not tested, specified by design) t son(is) -- -- 400 s overvoltage protection i bb = 15 ma t j = -40...+150c: v bis(z) 61 68 -- v input required current capabilit y of input switch t j =-40..+150c: i in(on) -- 0.7 1.2 ma maximum input current for turn-off t j =-40..+150c: i in(off) -- -- 50 a 8) if v on is higher, the sense current is no longer proportional to the load current due to sense current saturation.
data sheet bts 443 p infineon technologies ag page 6 of 13 2001-jan-23 truth table input current level output level current sense i is normal operation l h l h 0 nominal overload l h l h 0 i isfault short circuit to gnd l h l l 0 i isfault overtemperature l h l l 0 i isfault short circuit to v bb l h h h 0 data sheet bts 443 p infineon technologies ag page 7 of 13 2001-jan-23 input circuit (esd protection) in zd in i v bb r bb v z,in v bin v in esd-zener diode: 68 v typ., max 15 ma; current sense output normal operation is is r zd is v v bb z,is v r bb i is i is,fault v z,is = 68 v (typ.), r is = 1 k nominal (or 1 k /n, if n devices are connected in parallel). i s = i l / k ilis can be only driven by the internal circuit as long as v out - v is > 5v. if you want to measure load currents up to i l(m) , r is should be less than ilis m l bb k i v v / 5 ) ( . note: for large values of r is the voltage v is can reach almost v bb . see also overvoltage protection. if you don't use the current sense output in your application, you can leave it open. inductive and overvoltage output clamp + v bb out profet v z1 v on v on is clamped to v on(cl) = 42 v typ overvoltage protection of logic part + v bb v out in bb r signal gnd logic profet v z,is r is in r is v z,in r v v z,vis r bb = 200 typ , v z,in = v z,is = 68 v typ., r is = 1 k nominal. note that when overvoltage exceeds 73 v typ. a voltage above 5v can occur between is and gnd, if r v , v z,vis are not used.
data sheet bts 443 p infineon technologies ag page 8 of 13 2001-jan-23 reversave ( reverse battery protection) logic is in is r v r out l r power signal v bb - power transistor in r bb r d r v 1k , r is = 1 k nominal. add r in for reverse battery protection in applications with v bb above 16v; recommended value: 1 r in + 1 r is + 1 r v = v v a bb 12 | | , 05 . 0 to minimise power dissipation at reverse battery operation, the summarised current into the in and is pin should be about 50ma. the current can be provided by using a small signal diode d in parallel to the input switch, by using a mosfet input switch or by proper adjusting the current through r is and r v. v bb disconnect with energised inductive load provide a current path with load current capability by using a diode, a z-diode, or a varistor. ( v zl < 73 v or v zb < 30 v if r in =0). for higher clamp voltages currents at in and is have to be limited to 250 ma. version a: profet v in out is bb v bb v zl version b: profet v in out is bb v bb v zb note that there is no reverse battery protection when using a diode without additional z-diode v zl , v zb . version c: sometimes a necessary voltage clamp is given by non inductive loads r l connected to the same switch and eliminates the need of clamping circuit: profet v in out is bb v bb r l
data sheet bts 443 p infineon technologies ag page 9 of 13 2001-jan-23 inductive load switch-off energy dissipation profet v in out is bb e e e e as bb l r e load l r l { z l r is i in v bb i (t) l energy stored in load inductance: e l = 1 / 2 l i 2 l while demagnetising load inductance, the energy dissipated in profet is e as = e bb + e l - e r = v on(cl) i l (t) dt, with an approximate solution for r l 0 : e as = i l l 2 r l ( v bb + |v out(cl) |) ln (1+ i l r l |v out(cl) | ) the device is not suitable for permanent pwm with inductive loads if active clamping occurs every cycle. maximum allowable load inductance for a single switch off l = f (i l ); t j,start = 150c, v bb = 12 v, r l = 0 l[mh] 0.01 0.1 1 10 100 0 25 50 75 100 i l [a]
data sheet bts 443 p infineon technologies ag page 10 of 13 2001-jan-23 timing diagrams figure 1a: switching a resistive load, change of load current in on-condition: i in t v out i l i is t son(is) tt slc(is) load 1 load 2 soff(is) t t t on off slc(is) 90% dv/dton dv/dtoff 10% the sense signal is not valid during a settling time after turn-on/off and after change of load current. figure 1b: typical behaviour of sense output: i l(lim) = 20a i s i l i is,fault >= 2.5ma figure 2a: switching motors and lamps: i in t v out i il i is sense current above i is,fault can occur at very high inrush currents. figure 2b: switching an inductive load: i in t v out i l i is
data sheet bts 443 p infineon technologies ag page 11 of 13 2001-jan-23 figure 3a: short circuit: t i i is in l l(scr) i i l(scp) i isfault figure 4a: overtemperature reset if t j < t jt i in t i is v out t j a uto restart i is,fault figure 5a: undervoltage restart of charge pump, overvoltage clamp 0 2 4 6 8 10 12 024681012 v out v bin(ucp) v in = 0 i in = 0 v on(cl) v on(cl) v bin(u) v bin(u) dynamic, short undervoltage not below v bb
data sheet bts 443 p infineon technologies ag page 12 of 13 2001-jan-23 figure 6a: current sense versus load current: 0 1.0 2.0 0 5 10 15 20 i l [a] [ma] i is figure 6b: current sense ratio 10 : 0 8200 0 2.5 10 20 i l [a] k ilis 5 figure 7a: output voltage drop versus load current: 0.0 0.05 0.1 012345678 i l [a] [v] v on on(nl) v on r 10 ) this range for the current sense ratio refers to all devices. the accuracy of the k ilis can be raised by means of calibration the value of k ilis for every single device.
data sheet bts 443 p infineon technologies ag page 13 of 13 2001-jan-23 package and ordering code all dimensions in mm d-pak-5 pin: to-252-5-1 sales code bts443p ordering code q67060-s7404-a 2 published by infineon technologies ag, bereichs kommunikation st.-martin-strasse 76, d-81541 mnchen ? infineon technologies ag 1999 all rights reserved. attention please! the information herein is given to describe certain components and shall not be considered as warranted characteristics. terms of delivery and rights to technical change reserved. we hereby disclaim any and all warranties, including but not limited to warranties of non-infringement, regarding circuits, descriptions and charts stated herein. infineon technologies is an approved cecc manufacturer. information for further information on technology, delivery terms and conditions and prices please contact your nearest infineon technologies office in germany or our infineon technologies representatives worldwide (see address list). warnings due to technical requirements components may contain dangerous substances. for information on the types in question please contact your nearest infineon technologies office. infineon technologies components may only be used in life-support devices or systems with the express written approval of infineon technologies, if a failure of such components can reasonably be expected to cause the failure of that life- support device or system, or to affect the safety or effectiveness of that device or system. life support devices or systems are intended to be implanted in the human body, or to support and/or maintain and sustain and/or protect human life. if they fail, it is reasonable to assume that the health of the user or other persons may be endangered. gpt09161 5.4 0.1 -0.10 6.5 +0.15 a 0.5 9.9 6.22 -0.2 1 0.1 0.15 0.8 0.15 max 0.1 per side 5x0.6 1.14 4.56 +0.08 -0.04 0.9 2.3 -0.10 +0.05 b 0.51 min 0.1 1 +0.08 -0.04 0.5 0...0.15 b a 0.25 m 0.1 all metal surfaces tin plated, except area of cut. (4.17)

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