? north america tel: 800.366.2266 / fax: 978.366.2266 ? europe tel: 44.1908.574.200 / fax: 44.1908.574.300 ? asia/pacific tel: 81.44.844.8296 / fax: 81.44.844.8298 visit www.macomtech.com for additi onal data sheets and prod uct information. m/a-com technology solutions inc. and its affiliates reserve the right to make changes to the product(s) or information contained herein without notice. 1 sp6t pin diode switch with integrated bias network 2 - 18ghz rev. v2 MA4SW610B-1 advanced: data sheets contain information regarding a product m/a-com technology solutions is considering for development. performance is based on target specifications, simulated results, and/or prototype measurements. commitment to develop is not guaranteed. preliminary: data sheets contain information regarding a product m/a-com technology solutions has under development. performance is based on engineering tests. specifications are typical. mechanical outline has been fixed. engineering samples and/or test data may be available. commitment to produce in volume is not guaranteed. features ? ultra broad bandwidth: 2ghz to 18ghz ? 1.9db insertion loss, 35db isolation at 18ghz ? reliable. fully monolithic, glass encapsulated construction description the MA4SW610B-1 is a reflective sp6t series shunt broad band switch with integrated bias networks made with m/a-com?s hmic tm (heterolithic microwave int egrated circuit) process, us patent 5,268,310. this process allows the incorporation of silicon p edestals that form series and shunt diodes or vias by imbedding them in low loss, low dispersion glass. by using small spacing between elements, this comb ination of silicon and glass gives hmic devices low loss and high isolation performance through 18 ghz. applications these high performance switches are suitable for the use in multi-band ecm, radar, and instrumentation control circ uits where high isolation to insertion loss ratios are required. with a standard +5v/-5v, ttl controlled pin diode driver, 80ns switching speeds are achieved. absolute maximum ratings 1 @ t amb = +25c ( unless otherwise specified ) MA4SW610B-1 layout nominal chip dimensions chip dimensions (mm) x y chip 3370 3120 pad dimensions (mm) x y rf 400 125 pad locations (mm) x y j1 0 0 j2 -1535 +300 j3 -1535 +1800 j4 -750 +2820 j5 +750 +2820 j6 +1535 +1800 pad locations relative to j1 dc 125 125 b2 -1535 +1000 b3 -1535 +2500 b4 -50 +2820 b5 +1450 +2820 b6 +1535 +1100 j7 +1535 +300 b7 +900 0 parameter value operating temperature -65c to +125c storage temperature -65c to +150c dc bias current (forward) +/- 20ma applied voltage (reverse) 15v rf cw incident power +30dbm note: 1) exceeding any of these values may result in permanent damage. notes: 1) topside and backside metallization is gold , 2.5 m thick typical. 2) yellow areas indicate bondpads
? north america tel: 800.366.2266 / fax: 978.366.2266 ? europe tel: 44.1908.574.200 / fax: 44.1908.574.300 ? asia/pacific tel: 81.44.844.8296 / fax: 81.44.844.8298 visit www.macomtech.com for additi onal data sheets and prod uct information. m/a-com technology solutions inc. and its affiliates reserve the right to make changes to the product(s) or information contained herein without notice. 2 sp6t pin diode switch with integrated bias network 2 - 18ghz rev. v2 MA4SW610B-1 advanced: data sheets contain information regarding a product m/a-com technology solutions is considering for development. performance is based on target specifications, simulated results, and/or prototype measurements. commitment to develop is not guaranteed. preliminary: data sheets contain information regarding a product m/a-com technology solutions has under development. performance is based on engineering tests. specifications are typical. mechanical outline has been fixed. engineering samples and/or test data may be available. commitment to produce in volume is not guaranteed. electrical specifications @ t a = 25 c, +/- 10 ma bias current (on-wafer measurements) parameters frequency minimum typical maximum units insertion loss 6 ghz - 1.0 1.4 db 12 ghz - 1.3 2.0 db 18 ghz - 1.9 2.9 db isolation 6 ghz 43 49 - db 12 ghz 35 43 - db 18 ghz 30 39 - db input return loss 6 ghz - 18 - db 12 ghz - 20 - db 18 ghz - 16 - db 6 ghz - 19 - db 12 ghz - 22 - db 18 ghz - 20 - db switching speed 1 10 ghz - 80 - ns output return loss 1. typical switching speed is measured from 10% to 90% of the detected rf voltage driven by a ttl compatible driver. driver output parallel rc network uses a capacitor between 390pf - 560pf and a resistor between 150 - 220 ? to achieve 80ns rise and fall times. typical driver connections control level (dc current) b2 b3 b4 b5 j2-j1 j3-j1 j4-j1 j5-j1 -10 ma +10 ma +10 ma +10 ma low loss isolation isolation isolation +10 ma -10 ma +10 ma +10 ma isolation low loss isolation isolation +10 ma +10 ma -10 ma +10 ma isolation isolation low loss isolation +10 ma +10 ma +10 ma -10 ma isolation isolation isolation low loss condition of rf output b6 +10 ma +10 ma +10 ma +10 ma +10 ma +10 ma +10 ma +10 ma -10 ma isolation isolation isolation isolation j6-j1 isolation isolation isolation isolation low loss b7 +10 ma +10 ma +10 ma +10 ma +10 ma +10 ma +10 ma +10 ma +10 ma +10 ma -10 ma isolation isolation isolation isolation isolation j7-j1 isolation isolation isolation isolation isolation low loss
? north america tel: 800.366.2266 / fax: 978.366.2266 ? europe tel: 44.1908.574.200 / fax: 44.1908.574.300 ? asia/pacific tel: 81.44.844.8296 / fax: 81.44.844.8298 visit www.macomtech.com for additi onal data sheets and prod uct information. m/a-com technology solutions inc. and its affiliates reserve the right to make changes to the product(s) or information contained herein without notice. 3 sp6t pin diode switch with integrated bias network 2 - 18ghz rev. v2 MA4SW610B-1 advanced: data sheets contain information regarding a product m/a-com technology solutions is considering for development. performance is based on target specifications, simulated results, and/or prototype measurements. commitment to develop is not guaranteed. preliminary: data sheets contain information regarding a product m/a-com technology solutions has under development. performance is based on engineering tests. specifications are typical. mechanical outline has been fixed. engineering samples and/or test data may be available. commitment to produce in volume is not guaranteed. typical r.f. microwave performance typical insertion loss -5.00 -4.00 -3.00 -2.00 -1.00 0.00 2.00 4.00 6.00 8.00 10.00 12.00 14.00 16.00 18.00 frequency ( ghz ) il ( db ) j2 j3 j4 j5 j6 j7 typical isolation -80.00 -70.00 -60.00 -50.00 -40.00 -30.00 -20.00 -10.00 0.00 2.00 4.00 6.00 8.00 10.00 12.00 14.00 16.00 18.00 frequency ( ghz ) iso ( db ) j2 j3 j4 j5 j6 j7
? north america tel: 800.366.2266 / fax: 978.366.2266 ? europe tel: 44.1908.574.200 / fax: 44.1908.574.300 ? asia/pacific tel: 81.44.844.8296 / fax: 81.44.844.8298 visit www.macomtech.com for additi onal data sheets and prod uct information. m/a-com technology solutions inc. and its affiliates reserve the right to make changes to the product(s) or information contained herein without notice. 4 sp6t pin diode switch with integrated bias network 2 - 18ghz rev. v2 MA4SW610B-1 advanced: data sheets contain information regarding a product m/a-com technology solutions is considering for development. performance is based on target specifications, simulated results, and/or prototype measurements. commitment to develop is not guaranteed. preliminary: data sheets contain information regarding a product m/a-com technology solutions has under development. performance is based on engineering tests. specifications are typical. mechanical outline has been fixed. engineering samples and/or test data may be available. commitment to produce in volume is not guaranteed. typica r.f. microwave performance typical input return loss -30.00 -25.00 -20.00 -15.00 -10.00 -5.00 0.00 2.00 4.00 6.00 8.00 10.00 12.00 14.00 16.00 18.00 frequency ( ghz ) irl ( db ) j2 j3 j4 j5 j6 j7
? north america tel: 800.366.2266 / fax: 978.366.2266 ? europe tel: 44.1908.574.200 / fax: 44.1908.574.300 ? asia/pacific tel: 81.44.844.8296 / fax: 81.44.844.8298 visit www.macomtech.com for additi onal data sheets and prod uct information. m/a-com technology solutions inc. and its affiliates reserve the right to make changes to the product(s) or information contained herein without notice. 5 sp6t pin diode switch with integrated bias network 2 - 18ghz rev. v2 MA4SW610B-1 advanced: data sheets contain information regarding a product m/a-com technology solutions is considering for development. performance is based on target specifications, simulated results, and/or prototype measurements. commitment to develop is not guaranteed. preliminary: data sheets contain information regarding a product m/a-com technology solutions has under development. performance is based on engineering tests. specifications are typical. mechanical outline has been fixed. engineering samples and/or test data may be available. commitment to produce in volume is not guaranteed. operation of the MA4SW610B-1 switch the simultaneous application of negative dc current to the low lo ss port and positive dc current to the remaining isolated ports as shown in the schematic provid es successful rf operation of the ma4sw series of pin diode switches. the backside area of the die is the rf and dc return ground plane. the dc bias return is located on common port j1. constant current so urces should supply the dc control currents. in the low loss state, the series diode must be forward biased and the shunt diode reverse biased. for all isolated ports, the shunt diode is forward bias ed while the series diode is reverse biased. this design improves insertion loss, p1db, ip3, and swit ching speed by incorporating a voltage pull-up resistor (~100 ) in the dc return path , j1 , under insertion loss bias. a typical value of |-3 v| is achieved at the insertion loss bias node using 20ma, with a standard , 5v ttl controlled pin diode driver. MA4SW610B-1 schematic dc bias j1 ( common port ) j2 j3 j5 j7 j4 j6
? north america tel: 800.366.2266 / fax: 978.366.2266 ? europe tel: 44.1908.574.200 / fax: 44.1908.574.300 ? asia/pacific tel: 81.44.844.8296 / fax: 81.44.844.8298 visit www.macomtech.com for additi onal data sheets and prod uct information. m/a-com technology solutions inc. and its affiliates reserve the right to make changes to the product(s) or information contained herein without notice. 6 sp6t pin diode switch with integrated bias network 2 - 18ghz rev. v2 MA4SW610B-1 advanced: data sheets contain information regarding a product m/a-com technology solutions is considering for development. performance is based on target specifications, simulated results, and/or prototype measurements. commitment to develop is not guaranteed. preliminary: data sheets contain information regarding a product m/a-com technology solutions has under development. performance is based on engineering tests. specifications are typical. mechanical outline has been fixed. engineering samples and/or test data may be available. commitment to produce in volume is not guaranteed. assembly considerations the following precautions should be observe d for successful assembly of the die. cleanliness these chips should be handled in a clean env ironment free of dust and contaminants. electro-static sensitivity the ma4sw series pin switches are esd, class 1 sensit ive. the proper esd handling procedures should be used. wire bonding thermosonic wedge wire bonding using 0.003? x 0.00025? ribbon or 0.001? diameter gold wire is recommended. a stage temperature of 150 o c and a force of 18 to 22 grams should be used. ultrasonic energy should be adjusted to the minimum required to achieve a good bond. rf bonds should be as short as possible to minimize inductance. mounting these chips have ti-pt-au back metal. they can be die mounted with a 80au/20sn or sn62/pb36/ag2 solder preform or electrically conductive ag epoxy. mounting surface must be clean of oils and contaminants and flat. eutectic die attachment an 80/20 gold-tin eutectic solder preform is reco mmended with a work surface temperature of 255 o c and a tool tip temperature of 265 o c. when hot gas is applied, the tool tip temperature should be 290 o c. the chip should not be exposed to temper atures greater than 320 o c for more than 10 seconds. no more than 3 seconds should be required for the attachment. epoxy die attachment assembly should be preheated to 125-150 o c. a controlled thickness of 2 mils is recommended for best electrical and thermal conductivity. a thin epoxy fillet should be visible around the perimeter of the chip after placement. cure epoxy per manufacturer?s recommended schedule.
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