s9972/s9973 series the s9972/s9973 series are families of fft-ccd image sensors specifically designed for low-light-level detection in scientific applications. by using the binning operation, the s9972/s9973 series can be used as a linear image sensor having a long aperture in the directio n of the device length. this makes the s9972/s9973 series ideally suited for use in spectrophotometry. the binning operation offers significant improvement in s/n and signal processing speed compared with conventional methods by which signals are digitally added by an external circuit. the s9972/s9973 series also feature low noise and low dark signal (mpp mode operation). this enables low-light-level detection and long integration time, thus achieving a wide dynamic range. the s9972/s9973 series have an effective pixel size of 24 24 m and are available in image areas of 24.576 (h) 2.976 (v) mm 2 (1024 124 pixels) and 24.576 (h) 6.048 (v) mm 2 (1024 252 pixels). the s9972/s9973 series are pin compatible with the s9970/s9971 series. (operating conditions and characteristics are a little bit different from the s9970/s9971 series.) features l 1024 (h) 124 (v) and 1024 (h) 252 (v) pixel format l pixel size: 24 24 m l line/pixel binning l 100% fill factor l wide dynamic range l low dark signal l low readout noise l mpp operation l high near ir sensitivity applications l fluorescence spectrometer, icp l raman spectrometer l industrial inspection requiring l semiconductor inspection l dna sequencer l low-light-level detection image sensor ccd area image sensor front-illuminated fft-ccd, high near ir sensitivity selection guide type no. cooling number of total pixels number of active pixels active area [mm (h) mm (v)] suitable multichannel detector head S9972-1007 1044 128 1024 124 24.576 2.976 s9972-1008 non-cooled 1044 256 1024 252 24.576 6.048 c7020-02 s9973-1007 1044 128 1024 124 24.576 2.976 c7021-02 s9973-1008 one-stage te-cooled 1044 256 1024 252 24.576 6.048 c7025-02 general ratings parameter s9972 series s9973 series pixel size 24 (h) 24 (v) m vertical clock phase 2-phase horizontal clock phase 2-phase output circuit one-stage mosfet source follower package 24-pin ceramic dip (refer to dimensional outlines) window* 1 quartz glass s9973-1007: sapphire s9973-1008: ar-coated sapphire *1: temporary window type (ex. S9972-1007n) and uv coat type (ex. S9972-1007uv) are available upon request. (on the temporary window type, a window is temporarily attached by tape to protect the ccd chip and wires.) 1
ccd area image sensor s9972/s9973 series 2 absolute maximum ratings (ta=25 c) parameter symbol min. typ. max. unit operating temperature topr -50 - +30 c storage temperature tstg -50 - +70 c od voltage v od -0.5 - +25 v rd voltage v rd -0.5 - +18 v isv voltage v isv -0.5 - +18 v ish voltage v ish -0.5 - +18 v igv voltage v ig1v , v ig2v -15 - +15 v igh voltage v ig1h , v ig2h -15 - +15 v sg voltage v sg -15 - +15 v og voltage v og -15 - +15 v rg voltage v rg -15 - +15 v tg voltage v tg -15 - +15 v vertical clock voltage v p1v , v p2v -15 - +15 v horizontal clock voltage v p1h , v p2h -15 - +15 v operating conditions (mpp mode, ta=25 c) parameter symbol min. typ. max. unit output transistor drain voltage v od 18 20 22 v reset drain voltage v rd 12 13 14 v output gate voltage v og -0.5 0 2 v substrate voltage v ss - 0 - v test point (vertical input source) v isv - v rd - v test point (horizontal input source) v ish - v rd - v test point (vertical input gate) v ig1v , v ig2v -8 0 - v test point (horizontal input gate) v ig1h , v ig2h -8 0 - v high v p1vh , v p2vh 0 4 6 vertical shift register clock voltage low v p1vl , v p2vl -9 -8 -7 v high v p1hh , v p2hh 0 4 6 horizontal shift register clock voltage low v p1hl , v p2hl -9 -8 -7 v high v sgh 0 4 6 summing gate voltage low v sgl -9 -8 -7 v high v rgh 0 4 6 reset gate voltage low v rgl -9 -8 -7 v high v tgh 0 4 6 transfer gate voltage low v tgl -9 -8 -7 v external load resistance r l 9 10 11 k ? electrical characteristics (ta=25 c) parameter symbol min. typ. max. unit signal output frequency fc - 0.1 1 mhz s9972/s9973-1007 - 1600 - vertical shift register capacitance s9972/s9973-1008 c p1v , c p2v - 3200 - pf horizontal shift register capacitance c p1h , c p2h - 180 - pf summing gate capacitance c sg - 7 - pf reset gate capacitance c rg - 7 - pf transfer gate capacitance c tg - 100 - pf transfer efficiency* 2 cte 0.99995 0.99999 - - dc output level vout 12 15 18 v output impedance zo - 3 - k ? power dissipation* 3 p - 15 - mw *2: charge transfer efficiency per pixel, measured at half of the full well capacity *3: power dissipation of the on-chip amplifier plus load resistance
ccd area image sensor s9972/s9973 series spectral response (without window)* 12 50 40 30 20 10 0 200 400 300 500 600 700 wavelength (nm) 800 900 1000 1100 1200 quantum efficiency (%) (typ. ta=25 ?c) s9970/s9971 series s9972/s9973 series spectral transmittance characteristics of window material wavelength (nm) transmittance (%) 0 10 100 200 300 400 500 600 700 800 900 1000 20 30 40 50 60 70 80 90 100 (typ. ta=25 ?c) quartz glass sapphire ar-coated sapphire 3 electrical and optical characteristics (ta=25 c, unless otherwise noted) parameter symbol min. typ. max. unit saturation output voltage vsat - fw sv - v vertical 120 240 - full well capacity horizontal fw 240 480 - ke - ccd node sensitivity* 4 sv - 2.8 - v/e - +25 c - 2000 30000 dark current* 5 (mpp mode) 0 c ds - 100 1500 e - /pixel/s readout noise* 6 nr - 4 18 e - rms line binning 60000 120000 - dynamic range* 7 area scanning - 30000 60000 - - spectral response range - 400 to 1100 - nm photo response non-uniformity* 8 prnu - - 10 % point defects* 9 - - 0 cluster defects* 10 - - 0 blemish column defects* 11 - - - 0 - *4: v od =20 v , load resistance=10 k ? *5: dark current nearly doubles for every 5 to 7 c increase in temperature. *6: -40 c, operating frequency is 80 khz. *7: dynamic range (dr) = full well capacity / readout noise *8: measured at one-half of the saturation output (full well capacity) using led light (peak emission wavelength: 560 nm) *9: white spots pixels that generate dark current higher than 3% of the saturation. (measured at 0 c, ts=1 s) black spots pixels whose sensitivity is lower than one-half of the average pixel output (measured with uniform light producing one-half of the saturation charge) *10: 2 to 9 contiguous defective pixels *11: 10 or more contiguous defective pixels kmpdb0257ec kmpdb0310ea fixed pattern noise (peak to peak) signal 100 [%] photo response non-uniformity = *12: spectral response with sapphire or ar-coated sapphire is decreased according to the spectral transmittance charac- teristic of window material.
ccd area image sensor s9972/s9973 series device structure (conceptual drawing of top view in dimensional outlines) ...... ...... ...... v 1h ig1v ig2v isv ss rg rd os od og sg d1 d2 d3 d4 d5 d6 d7 d8 d9 d10 d11 d12 d13 d14 d15 d16 d17 d18 d19 d20 1 2 3 45 6 20 23 22 24 16 15 v=124, 252 h=1024 ish ig1h ig2h p1h p2h 13 12 11 10 9 4 blank pixels 4 blank pixels 4 optical black pixels 4 optical black pixels 1024 signal out 2 isolation pixels 2 isolation pixels tg p1v 14 p2v pixel format left horizontal direction right blank optical black isolation effective isolation optical black blank 4 4 2 1024 2 4 4 top vertical direction bottom isolation effective isolation 2 124 or 252 2 kmpdc0237eb 4 dark current vs. temperature 10000 1000 10 100 1 0.1 0.01 -50 -30 -40 -20 -10 0 temperature ( ? c ) 10 30 20 dark current (e - /pixel/s) (typ.) kmpdb0302ea window material type no. window material s9972 series quartz glass* 13 (option: window-less) s9973-1007 sapphire* 14 (option: window-less) s9973-1008 ar-coated sapphire* 14 (option: window-less) *13: resin sealing *14: hermetic sealing
ccd area image sensor s9972/s9973 series integration period (shutter has to be open) p1v rg os p2v, tg p1h p2h, sg readout period (shutter has to be closed) enlarged view tpwv to v r tpwr d1 d2 d3 d4 d18 d19 d20 p2v, tg p1h p2h, sg rg os tpwh, tpws 123 4..127 4..255 d5..d10, s1..s1024, d11..d17 128 124 + 4 (isolation): s9972/s9973-1007 256 252 + 4 (isolation): s9972/s9973-1008 kmpdc0240eb parameter symbol min. typ. max. unit s9972/s9973-1007 6.0 18 - pulse width* 15 s9972/s9973-1008 tpwv 12 36 - s p1v, p2v, tg rise and fall times tprv, tpfv 200 - - ns pulse width tpwh 500 5000 - ns rise and fall times* 15 tprh, tpfh 10 - - ns p1h, p2h duty ratio - - 50 - % pulse width tpws 500 5000 - ns rise and fall times tprs, tpfs 10 - - ns sg duty ratio - - 50 - % pulse width tpwr 100 500 - ns rg rise and fall times tprr, tpfr 5 - - ns tg - p1h overlap time tovr 3 6 - s *15: symmetrical clock pulses should be overlapped at 50% of maximum amplitude. area scanning (large full well mode) 5 integration period (shutter has to be open) vertical binning period (shutter has to be closed) 3..126 3..254 127 255 128 256 p1v p2v, tg p1h p2h, sg readout period (shutter has to be closed) 124 + 4 (isolation): s9972/s9973-1007 252 + 4 (isolation): s9972/s9973-1008 tpwv to v r tpwh, tpws tpwr 123 1043 1044: s9972/s9973-1007/-1008 4..1042 12 d19 d2 d1 d20 rg os d3..d10, s1..s1024, d11..d18 kmpdc0238eb timing chart line binning
ccd area image sensor s9972/s9973 series dimensional outlines (unit: mm) active area 24.576 40.64 0.41 112 24 13 14.99 0.25 6.048 1.1 0.3 1st pin index mark photosensitive surface 0.51 0.05 3.0 0.3 2.54 0.13 27.94 0.13 photosensitive surface 6 kmpda0205eb active area 24.576 40.64 0.41 112 24 13 10.05 0.25 2.976 1.1 0.3 1st pin index mark photosensitive surface 0.46 0.05 3.0 0.3 2.54 0.13 27.94 0.13 photosensitive surface kmpda0204eb s9972-1008 S9972-1007 active area 24.576 40.64 0.41 112 24 13 14.99 0.25 2.976 3.2 0.4 7.1 12.0 4.0 5.0 0.3 0.46 0.05 2.54 0.13 27.94 0.13 7.65 0.5 58.84 0.13 1st pin index mark photosensitive surface te-cooler kmpda0206eb s9973-1007
ccd area image sensor s9972/s9973 series 7.3 0.63 1.0 6.7 0.63 5.3 0.15 photosensitive surface (24 ) 0.5 0.05 7.7 0.68 1st pin indication pad 6.048 4.0 19.0 22.4 0.3 22.9 0.3 44.0 0.44 52.0 60.0 0.3 2.54 0.13 1 24 12 13 window 28.6* active area 24.576 8.2* km p te-cooler * size of window that guarantees the transmittance in the spectral transmittance characteristics of window material graph 7 kmpda0198eb s9973-1008 pin connections s9972 series s9973 series pin no. symbol description symbol description remark (standard operation) 1 rg reset gate rg reset gate 2 rd reset drain rd reset drain +13 v 3 os output transistor source os output transistor source r l =10 k ? 4 od output transistor drain od output transistor drain +20 v 5 og output gate og output gate 0 v 6 sg summing gate sg summing gate same timing as p2h 7 - th1 thermistor 8 - th2 thermistor 9 p2h ccd horizontal register clock-2 p2h ccd horizontal register clock-2 10 p1h ccd horizontal register clock-1 p1h ccd horizontal register clock-1 11 ig2h test point (horizontal input gate-2) ig2h test point (horizontal input gate-2) 0 v 12 ig1h test point (horizontal input gate-1) ig1h test point (horizontal input gate-1) 0 v 13 ish test point (horizontal input source) ish test point (horizontal input source) shorted to rd 14 p2v ccd vertical register clock-2 p2v ccd vertical register clock-2 15 p1v ccd vertical register clock-1 p1v ccd vertical register clock-1 16 tg* 16 transfer gate tg* 16 transfer gate same timing as p2v 17 - - 18 - p- te-cooler- 19 - p+ te-cooler+ 20 ss substrate (gnd) ss substrate (gnd) gnd 21 - - 22 isv test point (vertical input source) isv test point (vertical input source) shorted to rd 23 ig2v test point (vertical input gate-2) ig2v test point (vertical input gate-2) 0 v 24 ig1v test point (vertical input gate-1) ig1v test point (vertical input gate-1) 0 v *16: tg is an isolation gate between vertical register and horizontal register. in standard operation, the same pulse as p2v sh ould be applied to tg.
ccd area image sensor s9972/s9973 series specifications of built-in te-cooler (typ.) parameter symbol condition s9973-1007 s9973-1008 unit internal resistance rint ta=25 c 6.0 1.2 ? maximum current* 17 imax tc* 18 =th* 19 =25 c 1.5 3.0 a maximum voltage vmax tc* 18 =th* 19 =25 c 8.8 3.6 v maximum heat absorption* 20 qmax 6.7 5.1 w maximum temperature of hot side - 70 c *17: if the current is greater than imax, the heat absorption begins to decrease due to the joule heat. it should be noted that this value is not a damage threshold. to protect the thermoelectric cooler and maintain stable operation, the supply current should be less than 60 % of this maximum current. *18: temperature of cool side of thermoelectric cooler *19: temperature of hot side of thermoelectric cooler *20: this is a heat absorption when the maximum current is supplied to the te-cooler. 8 te-cooler characteristics 0 2 4 6 10 8 -30 2.0 1.5 1.0 0.5 0 -20 -10 0 10 20 (typ. ta=25 ? c) voltage (v) ccd temperature ( ? c) current (a) voltage vs. current ccd temperature vs. current kmpdb0177eb s9973-1007 0 1 2 3 voltage (v) ccd temperature ( ? c) 4 7 6 5 -40 -30 4 3 2 current (a) 1 0 -20 -10 0 10 20 30 (typ. ta=25 ? c) voltage vs. current ccd temperature vs. current kmpdb0179eb s9973-1008
ccd area image sensor s9972/s9973 series 9 precaution for use (electrostatic countermeasures) handle these sensors with bare hands or wearing cotton gloves. in addition, wear anti-static clothing or use a wrist strap, in order to prevent electrostatic damage due to electrical charges from friction. avoid directly placing these sensors on a work-desk or work-bench that may carry an electrostatic charge. provide ground lines or ground connection with the work-floor, work-desk and work-bench to allow static electricity to discharge. ground the tools used to handle these sensors, such as tweezers and soldering irons. it is not always necessary to provide all the electrostatic measures stated above. implement these measures according to the amount of damage that occurs. element cooling/heating temperature gradient rate when using an external cooler, the element cooling/heating temperature gradient rate should be set at less than 5 k/min. specifications of built-in temperature sensor a chip thermistor is built in the same package with a ccd chip, and the ccd chip temperature can be monitored with it. a relation between the thermistor resistance and absolute temperature is expressed by the following equation. r t1 = r t2 exp b t1/t2 (1/t1 - 1/t2) r t1 : resistance at absolute temperature t1 [k] r t2 : resistance at absolute temperature t2 [k] b t1/t2 : b constant [k] the characteristics of the thermistor used are as follows. r 298 =10 k ? b 298/323 =3450 k kmpdb0111eb 10 k ? 220 240 260 temperature (k) resistance 280 300 100 k ? 1 m ? features l c7020-02: for s9972 series c7021-02: for s9973-1007 c7025-02: for s9973-1008 l area scanning or full line-binnng operation l readout frequency: 250 khz l readout noise: 20 e - rms l ? t=50 ? c ( ? t changes by radiation method.) tector he d (c7020, c7021, c7025) input symbol value supply voltage v d1 v a1+ v a1- v a2 v d2 vp v f +5 vdc, 200 ma +15 vdc, +100 ma -15 vdc, -100 ma +24 vdc, 30 ma +5 vdc, 30 ma (c7021-02, c7025-02) +5 vdc, 2.5 a (c7021-02, c7025-02) +12 vdc, 100 ma (c7021-02, c7025-02) master start ms hcmos logic compatible master clock mc hcmos logic compatible, 1 mhz multichannel detector head (c7020-02, c7021-02, c7025-02)
ccd area image sensor s9972/s9973 series hamamatsu photonics k.k., solid state division 1126-1 ichino-cho, higashi-ku, hamamatsu city, 435-8558 japan, telephone: (81) 53-434-3311, fax: (81) 53-434-5184, www.hamamats u.com u.s.a.: hamamatsu corporation: 360 foothill road, p.o.box 6910, bridgewater, n.j. 08807-0910, u.s.a., telephone: (1) 908-231-0 960, fax: (1) 908-231-1218 germany: hamamatsu photonics deutschland gmbh: arzbergerstr. 10, d-82211 herrsching am ammersee, germany, telephone: (49) 8152- 375-0, fax: (49) 8152-265-8 france: hamamatsu photonics france s.a.r.l.: 19, rue du saule trapu, parc du moulin de massy, 91882 massy cedex, france, teleph one: 33-(1) 69 53 71 00, fax: 33-(1) 69 53 71 10 united kingdom: hamamatsu photonics uk limited: 2 howard court, 10 tewin road, welwyn garden city, hertfordshire al7 1bw, unit ed kingdom, telephone: (44) 1707-294888, fax: (44) 1707-325777 north europe: hamamatsu photonics norden ab: smidesv ? gen 12, se-171 41 solna, sweden, telephone: (46) 8-509-031-00, fax: (46) 8-509-031-01 italy: hamamatsu photonics italia s.r.l.: strada della moia, 1/e, 20020 arese, (milano), italy, telephone: (39) 02-935-81-733, fax: (39) 02-935-81-741 information furnished by hamamatsu is believed to be reliable. however, no responsibility is assumed for possible inaccuracies or omissions. specifications are subject to change without notice. no patent rights are granted to any of the circuits described herein. type numbers of products listed inthe specification sheets or supplied as samples may have a suffix "(x)" which means tentative specifications or a suffix "(z)" which means developmental specifications. ?2009 hamamatsu photonics k.k. cat. no. kmpd1092e04 nov. 2009 dn 10 multichannel detector head controller type no. interface photo accessories s7557 scsi scsi terminator fuse (2.5 a) detector head connection cable ac cable software (compatible os: windows 98/me* 21 ) operation manual s7557-01 usb2.0 usb cable fuse (2.5 a) detector head connection cable ac cable software (compatible os: windows 2000/xp/vista) operation manual mos adapter note: scsi cable and scsi board (card) are not supplied with the c7557 *21: this software may be run on windows 2000/nt/xp with a simple task. for information on how to do this, please consult with our sales office. connection example ac cable (100 to 240 v; included with the c7557-01 ) pc (windows 2000/xp/vista) c7557-01 usb cable (included with the c7557-01) image sensor + multichannel detector head (usb 2.0) shutter* timing pulse dedicated cable (included with the c7557-01) * shutter, etc. are not available. te control i/o signal i/o power trig. kaccc0402ea
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