publication date : oct 2011 1 < silicon rf power module s > ra 45 h 7687 m1 rohs compliance, 763 - 870 mhz 45 w 12.8 v , 2 stage amp. for mobile radio description the ra 45h7687 m 1 is a 45 - watt rf mosfet amplifier module for 12.8 - volt m obile radios that operate in the 763 - to 870 - mhz r ange. the battery can be connected directly to the drain of the enhancement - mode mosfet transistors. without the gate voltage 1 and the gate voltage 2 (v gg 1 = v gg2 = 0v), only a small leakage current flows into the drain and the nominal out put signal (p out =45w) attenuates up to 60 db. when fixed i.e. 3.4v, is supplied to the gate voltage 1, the output power and the drain current increase as the gate voltage 2 increases. the output power and the drain current increase substantially w ith the gate voltage 2 around 0 v (minimum) under the condition when the gate voltage 1 is kept in 3.4v. the nominal output power becomes available at the state that v gg2 is 4v (typical) and 5v (maximum). at this point, v gg 1 has to be kept in 3.4v . at v gg1 =3.4v & v gg2 =5v, the typical g ate current s are 0.4ma. this module is designed for non - linear fm modulation, but may also be used for linear modulation by setting the drain quiescent current with the gate voltages and controlling the output power with the input power. features ? enhanc ement - mode mosfet transistors (i dd ? 0 @ v dd = 12.8 v, v gg =0v) ? p out > 45 w , ? t > 33 % @v dd = 12.8 v, v gg 1 = 3.4 v, v gg2 =5v, p in = 5 0 mw ? broadband frequency range: 763 - 870 mhz ? metal cap structure that makes the improvements of rf radiation simple ? low - power control c urrent i gg 1 +i gg2 =0.4 ma (typ) @ v gg 1 = 3.4v, v gg2 =5v ? module size: 67 x 19.4 x 9.9 mm ? linear operation is possible by setting the quiescent drain current with the gate voltage s and controlling the output power with the input power . rohs compliance ? ra 45 h7687 m 1 is a rohs compliant product. ? rohs compliance is indicate by the letter ?g? after the lot marking . ? this product include the lead in the glass of electronic parts and the lead in electronic ceramic parts. however, it is applicable to the followin g exceptions of rohs directions. 1.lead in the g lass of a cathode - ray tube, electronic parts, and fluorescent tubes. 2.lead in electronic c eramic parts. ordering information: order number supply form ra 45h7687 m 1 - 1 01 antistatic tray, 10 modules/tray 4 1 5 2 3 1 rf input added gate voltage 1 (p in &v gg1 ) 2 gate voltage 2 (v g g 2 ), power control 3 drain voltage (v dd ), battery 4 rf output (p out ) 5 rf ground (case) block diagram package code: h2m
< silicon rf power module s > ra 45h7687m1 rohs compliance, 763 - 870 mhz 45 w 12.8 v , 2 stage amp. for mobile radio publication date : oct 2011 2 maximum ratings ( t case =+25 c , z g =z l =50 ? , unless otherwise specified ) symbol parameter conditions rating unit v dd drain voltage v gg 1 =3.4v 7 % , v gg2 <5 v , p in =0w 17 v v gg 1 gate voltage 1 v gg2 <5v, v dd <12.8 v , p in = 5 0 m w 4.5 v v gg 2 gate voltage 2 v gg1 =3.4v 7 % , v dd <12.8 v, p in = 5 0 m w 6 v p in input power 100 mw p out output power 60 w t case(op) operation case temperature range f= 763 - 870 mhz, v gg 1 =3.4v 7 % , v gg2 <5 v - 30 to + 100 c t stg storage temperature range - 40 to +110 c the above parameters are independ ently guaranteed. electrical characteristics ( t case =+25 c , z g =z l =50 ? , unless otherwise specified ) symbol parameter conditions min typ max unit f frequency range 763 - 870 mhz p out 1 output power 1 v dd = 12.8 v , v gg 1 = 3.4v, v gg2 =5v, p in = 5 0mw 45 - - w ? t tota l efficiency v dd = 12.8 v 33 - - % 2f o 2 nd harmonic v gg 1 = 3.4v - - - 40 dbc 3 f o 3 nd harmonic v gg2 =5v - - - 35 dbc ? in input vswr p in = 5 0mw - - 3:1 ? i dd leakage current v dd = 17 v , v gg1 =v gg2 =0v, p in =0w - - 1 ma p out 2 output power 2* v dd = 15.2 v , v gg 1 = 3.4v, v gg2 =1 v, p in = 2dbm - - 1.5 w ? stability v dd = 10.0 - 15.2 v , p in =1 - 100mw, 1.5 < silicon rf power module s > ra 45h7687m1 rohs compliance, 763 - 870 mhz 45 w 12.8 v , 2 stage amp. for mobile radio publication date : oct 2011 3 typical performance ( t case =+25c, z g =z l =50 ? , unless otherwise specified ) output power, total efficiency, 2 nd , 3 rd harmonics versus frequency versus frequency input vswr versus frequency 10 20 30 40 50 60 70 80 760 780 800 820 840 860 880 frequency f (mhz) o u t p u t p o w e r p o u t ( w ) t o t a l e f f i c i e n c y ( % ) v dd =12.8v v gg1 =3.4v v gg2 =5v p in =50m w p out h t -80 -70 -60 -50 -40 -30 760 780 800 820 840 860 880 frequency f (mhz) h a r m o n i c s ( d b c ) v dd =12.8v v gg1 =3.4v v gg2 =5v p in =50m w 2 nd 3 rd 1 2 3 4 5 760 780 800 820 840 860 880 frequency f (mhz) i n p u t v s w r r i n ( - ) v dd =12.8v v gg1 =3.4v v gg2 =5v p in =50m w r in
< silicon rf power module s > ra 45h7687m1 rohs compliance, 763 - 870 mhz 45 w 12.8 v , 2 stage amp. for mobile radio publication date : oct 2011 4 output power, power gain and output power, power gain and drain current versus input power drain current versus input power output power, power gain and output power and drain current drain current versus input power versus drain voltage output power and drain current output power and drain current versus drain voltage versus drain voltage 0 10 20 30 40 50 60 -10 -5 0 5 10 15 20 input power p in (dbm) o u t p u t p o w e r p o u t ( d b m ) p o w e r g a i n g p ( d b ) 0 4 8 12 16 20 24 d r a i n c u r r e n t i d d ( a ) f=806mhz v dd =12.8v v gg1 =3.4v v gg2 =5v p out gp i dd 0 10 20 30 40 50 60 -10 -5 0 5 10 15 20 input power p in (dbm) o u t p u t p o w e r p o u t ( d b m ) p o w e r g a i n g p ( d b ) 0 4 8 12 16 20 24 d r a i n c u r r e n t i d d ( a ) f=870mhz v dd =12.8v v gg1 =3.4v v gg2 =5v p out gp i dd 0 10 20 30 40 50 60 -10 -5 0 5 10 15 20 input power p in (dbm) o u t p u t p o w e r p o u t ( d b m ) p o w e r g a i n g p ( d b ) 0 4 8 12 16 20 24 d r a i n c u r r e n t i d d ( a ) f=764mhz v dd =12.8v v gg1 =3.4v v gg2 =5v p out gp i dd 0 10 20 30 40 50 60 70 80 90 2 4 6 8 10 12 14 16 drain voltage v dd (v) o u t p u t p o w e r p o u t ( w ) 0 2 4 6 8 10 12 14 16 18 d r a i n c u r r e n t i d d ( a ) p out f=764mhz v gg1 =3.4v v gg2 =5v p in =50m w i dd 0 10 20 30 40 50 60 70 80 90 2 4 6 8 10 12 14 16 drain voltage v dd (v) o u t p u t p o w e r p o u t ( w ) 0 2 4 6 8 10 12 14 16 18 d r a i n c u r r e n t i d d ( a ) p out f=806mhz v gg1 =3.4v v gg2 =5v p in =50m w i dd 0 10 20 30 40 50 60 70 80 90 2 4 6 8 10 12 14 16 drain voltage v dd (v) o u t p u t p o w e r p o u t ( w ) 0 2 4 6 8 10 12 14 16 18 d r a i n c u r r e n t i d d ( a ) p out f=870mhz v gg1 =3.4v v gg2 =5v p in =50m w i dd
< silicon rf power module s > ra 45h7687m1 rohs compliance, 763 - 870 mhz 45 w 12.8 v , 2 stage amp. for mobile radio publication date : oct 2011 5 typical performance ( t case =+25c, z g =z l =50 ? , unless otherwise specified ) output power and drain current output power and drain current versus gate voltage2 versus gate voltage2 output power and drain current output power and drain current versus gate voltage2 versus gate voltage2 output power and drain current output power and drain current versus gate voltage2 versus gate voltage2 0 10 20 30 40 50 60 0 1 2 3 4 5 gate voltage v gg2 (v) o u t p u t p o w e r p o u t ( w ) 0 2 4 6 8 10 12 d r a i n c u r r e n t i d d ( a ) f=764mhz v dd =12.8v v gg1 =3.4v p in =50m w i dd p out (dbm ) p out (w) 0 10 20 30 40 50 60 0 1 2 3 4 5 gate voltage v gg2 (v) o u t p u t p o w e r p o u t ( w ) 0 2 4 6 8 10 12 d r a i n c u r r e n t i d d ( a ) p out (w) f=806mhz v dd =12.8v v gg1 =3.4v p in =50m w i dd p out (dbm) 0 10 20 30 40 50 60 0 1 2 3 4 5 gate voltage v gg2 (v) o u t p u t p o w e r p o u t ( w ) 0 2 4 6 8 10 12 d r a i n c u r r e n t i d d ( a ) f=870mhz v dd =12.8v v gg1 =3.4v p in =50m w i dd p out (dbm ) p out (w) ( d b m ) ( d b m ) ( d b m ) 0 10 20 30 40 50 60 1 2 3 4 5 gate voltage v gg2 (v) o u t p u t p o w e r p o u t ( w ) 0 2 4 6 8 10 12 d r a i n c u r r e n t i d d ( a ) f=764mhz v dd =12.8v v gg1 =3.4v p in =2dbm i dd p out (dbm ) p out (w) ( d b m ) 0 10 20 30 40 50 60 1 2 3 4 5 gate voltage v gg2 (v) o u t p u t p o w e r p o u t ( w ) 0 2 4 6 8 10 12 d r a i n c u r r e n t i d d ( a ) f=806mhz v dd =12.8v v gg1 =3.4v p in =2dbm i dd p out (dbm ) p out (w) ( d b m ) 0 10 20 30 40 50 60 1 2 3 4 5 gate voltage v gg2 (v) o u t p u t p o w e r p o u t ( w ) 0 2 4 6 8 10 12 d r a i n c u r r e n t i d d ( a ) f=870mhz v dd =12.8v v gg1 =3.4v p in =2dbm i dd p out (dbm ) p out (w) ( d b m )
< silicon rf power module s > ra 45h7687m1 rohs compliance, 763 - 870 mhz 45 w 12.8 v , 2 stage amp. for mobile radio publication date : oct 2011 6 3 . 1 + 0 . 6 / - 0 . 4 7 . 3 0 . 5 9 . 9 2 . 6 44 1 56 1 4 9 . 8 1 67 1 60 1 2-r2 0.5 1 9 . 4 1 1 5 1 17 1 12.5 1 1 0 . 7 1 1 8 1 4 0 . 5 0 . 6 0 . 2 ( 3 . 2 6 ) outline drawing (mm) 1 rf i nput added gate voltag e 1 (p in & v gg1 ) 2 gate voltage 2 (v gg 2 ) 3 drain voltage (v dd ) 4 rf o utput (p out ) 5 rf g round (case)
< silicon rf power module s > ra 45h7687m1 rohs compliance, 763 - 870 mhz 45 w 12.8 v , 2 stage amp. for mobile radio publication date : oct 2011 7 4 3 1 2 5 external resistance connected to v gg1 ; impedance between pin&v gg1 and ground needs to make hig h impedance note: resistance between gate voltage 1, where rf is input, and ground equals to 15k ohm. that doesn't prevent rf characteristic on this module. dut z g =50 5 4 3 2 1 z l =50 c3 c4 c2 c1 r1 a directional coupler attenuator pow er meter spectrum analyzer - + dc pow er supply v gg2 + - dc pow er supply v dd - + dc pow er supply v gg1 attenuator pre- amplifier pow er meter directional coupler attenuator signal generator test block diagram equivalent circuit equivalent circuit c 3 , c 4: 4700pf, 22uf in parallel 1 rf i nput added gate voltage 1 (p in & v gg1 ) 2 gate voltage 2 (v gg 2 ) 3 drain voltage (v dd ) 4 rf o utput (p out ) 5 rf g round (case) c 1: 4700pf, c2: 1000pf, r1: suitable. please refer the detail below. v gg1 =3.4v v gg1
< silicon rf power module s > ra 45h7687m1 rohs compliance, 763 - 870 mhz 45 w 12.8 v , 2 stage amp. for mobile radio publication date : oct 2011 8 recommendations and application information: construction: this module consists of a glass - epoxy substrate soldered onto a copper flange. for mechanical protection, a metal cap is attached (which makes the improvement of rf radiation easy). th e mosfet transistor chips are die bonded onto metal, wire bonded to the substrate, and coated with resin. lines on the substrate (eventually inductors), chip capacitors, and resistors form the bias and matching circuits. wire leads soldered onto the glass - epoxy substrate provide the dc and rf connection. following conditions must be avoided: a) bending forces on the glass - epoxy substrate (for example, by driving screws or from fast thermal changes) b) mechanical stress on the w ire leads (for example, by fir st soldering then driving screws or by thermal expansion) c) d efluxing solvents reacting with the resin coating on the mosfet chips (for example, trichlor o ethylene) d) esd, surge, overvoltage in combination with load vswr, and oscillation esd: this mosfet module is sensitive to esd voltages down to 1000v. appropriate esd precautions are required. mounting: a thermal compound between module and heat sink is recommended for low thermal contact resistance . the module must first be screwed to th e heat sink , t hen the leads can be soldered to the printed circuit board. m3 screws are recommended with a tightening torque of 4.0 to 6.0 kgf - cm . soldering and defluxing: this module is designed for manual soldering. the leads must be soldered after the m odule is screwed onto the heat sink. the temperature of the lead (terminal) soldering should be lower than 350c and shorter than 3 second . ethyl alcohol is recommend for removing flux. trichlor o ethylene solvents must not be used (they may cause bubbles in the coating of the transistor chips which can lift off the bond wires). thermal design of the heat sink: at p out = 45 w, v dd =12. 8 v and p in =50mw each stage transistor operating conditions are : stage p in (w) p out (w) r th(ch - case) (c/w) i dd @ ? t = 33 % (a) v dd (v ) 1 st 0.05 3.0 3.5 0. 62 2 nd 3.0 45 .0 0.6 9.96 12.8 the channel temperatures of each stage transistor t ch = t case + (v dd x i dd - p out + p in ) x r th(ch - case) are: t ch1 = t case + (12. 8 v x 0. 62 a ? 3.0 w + 0.05w) x 3.5 c/w = t case + 17.5 c t ch2 = t case + (12 . 8 v x 9.96 a ? 45 .0w + 3.0 w) x 0.6 c/w = t case + 51.3 c for long - term reliability, it is best to keep the module case temperature (t case ) below 90c. for an ambient temperature t air =60c and p out = 45 w , the required thermal resistance r th (case - air) = ( t c ase - t air ) / ( (p out / ? t ) - p out + p in ) of the heat sink, including the contact resistance, is: r th(case - air) = (90c - 60c) / ( 45 w/ 33 % - 45 w + 0.0 5 w) = 0.33 c/w when mounting the module with the thermal resistance of 0.33 c/w, the channel temperat ure of each stage transistor is: t ch1 = t air + 47.5 c t ch2 = t air + 81.3 c the 175c maximum rating for the channel temperature ensures application under de r a ted conditions. output power control: depending on linearity, the following t hree methods are recommended to control the output power: a) non - linear fm modulation at high power operating: by the gate voltages (v gg1 and v gg2 ). when the gate voltages are close to zero, the nominal output signal (p out =45w) is attenuated up to 60 db and only a small leakage current flows from the battery into the drain. (on the following, v gg1 has to be kept in 3.4v . ) around v gg2 =0v(minimum), the output power and drain current increases substantially. around v gg2 =4v (typical) to v gg2 =5v (maximum), the nominal output power becomes available. b) linear am modulation: by rf input power p in . (on the following, v gg1 has to be kept in 3.4v . ) v gg2 is used to set the drain?s quiescent current for the required linearity.
< silicon rf power module s > ra 45h7687m1 rohs compliance, 763 - 870 mhz 45 w 12.8 v , 2 stage amp. for mobile radio publication date : oct 2011 9 oscillation: to test rf characteristics, this module is put on a fixture with two bias decoupling capacitors each on gate and drain, a 4.700 pf chip capacitor, located close to the module, and a 22 f (or more) electrolytic capacitor. when an amplifier circuit around this module shows oscillation, the followin g may be checked: a) do the bias decoupling capacitors have a low inductance pass to the case of the module? b) is the load impedance z l =50 ? ? c) is the source impedance z g =50 ? ? a ttention: 1.high temperature ; this product might have a heat generation while op eration,please take notice that have a possibility to receive a burn to touch the operating product directly or touch the product until cold after switch off. at the near t he product,do not place the combustible material that have possibilities to arise the fire. 2. generation of high frequency power ; this product generate a high frequency power. please take notice that do not leakage the unnecessary electric wave and use t his products without cause damage for human and property per normal operation. 3. before use; before use the product,please design the equipment in consideration of the risk for human and electric wave obstacle for equipment. precautions for the use of mi tsubishi silicon rf power devices: 1. the specifications of mention are not guarantee values in this data sheet. please confirm additional details regarding operation of these products from the formal specification sheet. for copies of the formal specific ation sheets, p lease contact one of our sales offices . 2.ra series products (rf power amplifier modules) and rd series products (rf power transistors) are designed for consumer mobile communication terminals and were not specifically designed for use in o ther applications. in particular, while these products are highly reliable for their designed purpose, they are not manufactured under a quality assurance testing protocol that is sufficient to guarantee the level of reliability typically deemed necessary for critical communications elements and in the application, which is base station applications and fixed station applications that oper ate with long term continuous transmission and a higher on - off frequency during transmitting, please consider the derating, the redundancy system, appropriate setting of the maintain period and others as needed. for the reliability report which is describe d about predicted operating life time of mitsubishi silicon rf products , please contact mitsubishi electric corporation or an authorized mitsubishi semiconductor product distributor . 3. rd series products use mosfet semiconductor technology. the y are sens itive to esd voltage therefore a ppropriate esd precautions are required. 4. in the case of use in below than recommended frequency , t here is possibility to occur that the device is deteriorated or destroyed due to the rf - swing exceed the breakdown voltage. 5. in order to maximize reliability of the equipment, it is better to keep the devices temperature low. it is recommended to utilize a sufficient sized heat - sink in conjunction with other cooling methods as needed (fan, etc.) to keep the channel temper ature for rd series products lower than 120deg/c(in case of tchmax=150deg/c) ,140deg/c(in case of tchmax=175deg/c) under standard conditions. 6. do not use the device at the exceeded the maximum rating condition. in case of plastic molded devices, the exce eded maximum rating condition may cause blowout, smoldering or catch fire of the molding resin due to extreme short current flow between the drain and the source of the device. these results causes in fire or injury. 7. for specific precaution s regarding a ssembly of these products into the equipment , please refer to the supplementary item s in the specification sheet. 8. warranty for the product is void if the products protective cap (lid) is removed or if the product is modified in any way from it?s origina l form. 9. for additional ?s afety first ? in your circuit design and notes regarding the materials , please refer the last page of this data sheet . 10. please refer to the additional precaution s in the formal specification sheet.
< silicon rf power module s > ra 45h7687m1 rohs compliance, 763 - 870 mhz 45 w 12.8 v , 2 stage amp. for mobile radio publication date : oct 2011 10 ? 2011 mitsubishi electric corporation. all rights reserved. keep safety first in your circuit designs! mitsubishi electric corporation puts the maximum effort into making semiconductor products better and more reli able, but there is always the possibility that trouble may occur with them. trouble with semiconductors may lead to personal injury, fire or property damage. remember to give due consideration to safety when making your circuit designs, with appropriate me asures such as (i) placement of substitutive, auxiliary circuits, (ii) use of non - flammable material or (iii) prevention against any malfunction or mishap. notes regarding these materials ? these materials are intended as a reference to assist our customers in the selection of the mitsubishi semiconductor product best suited to the customer?s application; they do not convey any license under any intellectual property rights, or any other righ ts, belonging to mitsubishi electri c corporation or a third party. ? mitsubishi electric corporation assumes no responsibility for any damage, or infringement of any third - party?s rights, originating in the use of any product data, diagrams, charts, program s, algorithms, or circuit application examples contained in these materials. ? all information contained in these materials, including product data, diagrams, charts, programs and algorithms represents information on products at the time of publication of t hese material s, and are subject to change by mitsubishi electric corporation without notice due to product improvements or other reasons. it is therefore recommended that customers contact mitsubishi electric corporation or an authorized m itsubishi semicon ductor product distributor for the latest product information before purchasing a product listed herein. the information described here may contain technical inaccuracies or typographical errors. mitsubishi electric corporation assumes no responsibility fo r any damage, liability, or other loss rising from these inaccuracies or errors. please also pay attention to information published by mitsubishi electric corporation by various means, including the mitsubishi semiconductor home page (http: //www. m itsubishi e lectric.com/). ? when using any or all of the information contained in these materials, including product data, diagrams, charts, programs, and algorithms, please be sure to evaluate all information as a total system before making a final decision on the a pplicability of the information and products. mitsubishi electric corporation assumes no responsibility for any damage, liability or other loss resulting from th e information contained herein. ? mitsubishi electric corporation semiconductors are not designe d or manufactured for use in a device or system that is used under circumstances in which human life is potentially at stake. please contact mitsubishi electric corporation or an authorized mitsubishi semiconductor product distributor when considering the use of a product contained herein for any specific purposes, such as apparatus or systems for transportation, vehicular, medical, aerospace, nuclear, or underse a repeater use. ? the prior written approval of mitsubishi electric corporation is necessary to r eprint or reproduce in wh ole or in part these materials. ? if these products or technologies are subject to the japanese export control restrictions, they must be exported under a license from the japanese government and cannot be imported into a country ot her than the approved destination. any diversion or re - export contrary to the export control laws and regulations of japan and/or the country of destination is prohibited. ? please contact mitsubishi electric corporation or an authorized mitsubishi semicond uctor product distributor for further details on these materials or the products contained therein.
|
