switching diodes 1 publication date: november 2003 skf00064bed MAS3132D silicon epitaxial planar type for switching circuits features ? two elements are contained in one package, allowing high- density mounting ? short reverse recovery time t rr ? small terminal capacitance c t absolute maximum ratings t a = 25 c parameter symbol rating unit reverse voltage v r 80 v maximum peak reverse voltage v rm 80 v forward current single i f 100 ma double 150 peak forward current single i fm 225 ma double 340 non-repetitive peak single i fsm 500 ma forward surge current * double 750 junction temperature t j 150 c storage temperature t stg ? 55 to + 150 c parameter symbol conditions min typ max unit forward voltage v f i f = 100 ma 1.2 v reverse voltage v r i r = 100 a80v reverse current i r v r = 75 v 100 na terminal capacitance c t v r = 0 v, f = 1 mhz 15 pf reverse recovery time * t rr i f = 10 ma, v r = 6 v 10 ns i rr = 0.1 i r , r l = 100 ? electrical characteristics t a = 25 c 3 c bias application unit n-50bu 90% pulse generator (pg-10n) r s = 50 ? wave form analyzer (sas-8130) r i = 50 ? t p = 2 s t r = 0.35 ns = 0.05 i f = 10 ma v r = 6 v r l = 100 ? 10% input pulse output pulse i rr = 0.1 i r t r t p t rr v r i f t t a internal connection note) * : t = 1 s note) 1. measuring methods are based on japanese industrial standard jis c 7031 measuring method for diodes. 2. absolute frequency of input and output is 100 mhz. 3. * : t rr measurement circuit 1: cathode 1 2: cathode 2 3: anode 1, 2 sssmini3-f1 package unit: mm marking symbol: mo 1.20 0.05 0.52 0.03 0 to 0.01 0.15 max. 5? 0.15 min. 0.80 0.05 0.15 min. 0.33 (0.40) (0.40) 12 3 5? 0.80 0.05 1.20 0.05 +0.05 ?.02 0.10 +0.05 ?.02 0.23 +0.05 ?.02 12 3
2 MAS3132D skf00064bed i r ? t a c t ? v r i f(surge) ? t w i f ? v f i r ? v r v f ? t a 10 ? 2 0 0.2 0.4 0.6 0.8 1.0 1.2 10 ? 1 1 10 10 2 10 3 forward voltage v f ( v ) forward current i f ( ma ) t a = 150 c 100 c 25 c ? 20 c 10 ? 1 0 20 40 60 80 100 120 1 10 10 2 10 3 10 4 reverse voltage v r ( v ) reverse current i r ( na ) t a = 150 c 100 c 25 c 0 0.4 0.8 1.2 1.6 ? 40 0 40 80 120 160 200 ambient temperature t a ( c ) forward voltage v f ( v ) i f = 100 ma 10 ma 3 ma 10 ? 1 1 10 10 2 10 3 10 1 10 ? 1 pulse width t w ( ms ) forward surge current i f(surge) ( a ) t w non repetitive i f(surge) t a = 25 c 0 2 4 6 8 0 20 40 60 80 100 120 reverse voltage v r ( v ) terminal capacitance c t ( pf ) f = 1 mhz t a = 25 c 10 ? 1 ? 40 0 40 80 120 160 200 1 10 10 2 10 3 10 4 ambient temperature t a ( c ) reverse current i r ( na ) v r = 75 v 35 v 6 v
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