GFC654 vishay semiconductor document number 74553 www.vishay.com 5-dec-01 1 new product p-channel enhancement-mode mosfet features ?advanced trench process technology ?high density cell design for ultra low on-resistance ?popular sot-23-6l package with copper lead-frame for superior thermal and electrical capabilities ?compact and low profile maximum ratings and thermal characteristics (t a = 25? unless otherwise noted) parameter symbol limit unit drain-source voltage v ds ?0 v gate-source voltage v gs 20 continuous drain current (2) t a = 25? i d 3.6 t j = 150? t a = 70? 2.9 a pulsed drain current (1) i dm ?0 power dissipation (2) t a = 25? p d 2.0 w t j = 150? t a = 70? 1.3 operating junction and storage temperature range t j , t stg ?5 to 150 ? junction-to-ambient thermal resistance (2) r ja 62.5 ?/w notes: (1) pulse width limited by maximum junction temperature (2) surface mounted on fr4 board, t 5 sec. mechanical data case: sot-23-6l package terminals: leads solderable per mil-std-750, method 2026 marking code: 54 v ds 30v r ds(on) 75 m ? i d 3.6a mounting pad layout pin configuration (top view) sot-23-6l t rench g en f et 0.122 (3.10) 0.114 (2.90) 0.067 (1.70) 0.059 (1.50) 0.118 (3.00) 0.106 (2.70) 0.020 (0.50) 0.010 (0.25) 0.004 (0.10) 0.0005 (0.013) 0.075 (1.90) 0.008 (0.20) 0.004 (0.10) 10 typical 0.039 (1.00) 0.036 (0.90) 0.037 (0.95) top view dimensions in inches and (millimeters) 65 4 123 0.037 (0.95) ref. 0.074 (1.9) ref. 0.094 (2.4) 0.028 (0.7) 0.039 (1.07)
GFC654 vishay semiconductor www.vishay.com document number 74553 2 5-dec-01 electrical characteristics (t j = 25 c unless otherwise noted) parameter symbol test condition min typ max unit static drain-source breakdown voltage bv dss v gs = 0v, i d = 250 a 30 v gate threshold voltage v gs(th) v ds = v gs , i d = 250 a 1 3v gate-body leakage i gss v ds = 0v, v gs = 20v 100 na zero gate voltage drain current i dss v ds = 24v, v gs = 0v 1.0 a v ds = 20v, v gs =0v, t j =55 c 10.0 on-state drain current (1) i d(on) v ds = 5v, v gs = 4.5v 5 a v gs = 10v, i d = 3.6a 55 75 drain-source on-state resistance (1) r ds(on) t j = 125 c 75 127 m ? v gs = 4.5v, i d = 2.7a 86 125 forward transconductance (1) g fs v ds = 10v, i d = 3.6a 3 s dynamic total gate charge (1) q g v ds = 15v, v gs = 10v 12.5 15 gate-source charge (1) q gs i d = 3.6a 2.0 nc gate-drain charge (1) q gd 2.5 turn-on delay time (1) t d(on) 518 rise time (1) t r v dd = 15v 5.5 14 turn-off delay time (1) t d(off) i d 1a, v gen = 10v 40 60 ns fall time (1) t f r g = 6 ? 19 29 input capacitance c iss v ds = 15v, v gs = 0v 670 output capacitance c oss f = 1.0mh z 125 pf reverse transfer capacitance c rss 70 source-drain diode maximum diode forward current i s t a = 25 c 1.3 a maximum pulsed diode forward current (2) i sm 10 diode forward voltage (1) v sd i s = 1.3a, v gs = 0v 0.85 1.2 v t j = 125 c 0.64 1 note: (1) pulse test, pulse width 300 s, duty cycle 2% (2) pulse width limited by maximum junction temperature g d s v in v dd v gen r g r d v out dut input, v in t d(on) output, v out t on t r t d(off) t off t f inverted 90% 10% 10% 90 % 50% 50% 10% 90% pulse width switching test circuit switching waveforms
GFC654 vishay semiconductor document number 74553 www.vishay.com 5-dec-01 3 ratings and characteristic curves (t a = 25 c unless otherwise noted) 0 2 4 6 10 01 2 3 4 5 fig. 1 ?output characteristics 0 0.12 0.06 0.18 0 6 12 15 fig. 4 ?on-resistance vs. drain current 0 2 4 6 8 10 12345 fig. 2 ?transfer characteristics 8 0.6 0.8 1.4 1.6 1.8 1.2 1 -- 50 -- 25 25 50 75 100 125 150 0 fig. 5 ?on-resistance vs. junction temperature v gs = --10v i d = --3.6a --4.0v --3.5v --3.0v 1.2 1.1 0.6 0.7 0.8 0.9 1 -- 50 -- 25 25 50 75 100 125 150 0 fig. 3 ?threshold voltage i d = --250 a -- i d -- drain-to-source current (a) --v ds -- drain-to-source voltage (v) r ds(on) -- on-resistance ( ? ) -- i d -- drain current (a) -- i d -- drain current (a) --v gs -- gate-to-source voltage (v) r ds(on) -- on-resistance (normalized) t j -- junction temperature ( c) -- v (th) -- gate-to-source threshold voltage (normalized) t j -- junction temperature ( c) 3 9 v gs = --4.5v, --5v, --6v, --7v, --8v, --10.0v --2.5v v ds = --10v t j = 125 c --55 c 25 c v gs = --4.5v v gs = --10.0v 0 0.1 0.2 0.3 0.4 246810 fig. 6 ?on-resistance vs. gate-to-source voltage i d = --3.6a t j = 125 c 25 c r ds(on) -- on-resistance ( ? ) -- v gs -- gate-to-source voltage (v)
GFC654 vishay semiconductor www.vishay.com document number 74553 4 5-dec-01 ratings and characteristic curves (t a = 25 c unless otherwise noted) 0 2 4 6 8 10 024 8 6 fig. 7 gate charge 10 12 14 v ds = -- 15v i d = -- 3.6a q g -- gate charge (nc) -- v gs -- gate-to-source voltage (v) 0 600 500 400 300 200 100 700 800 900 0 5 10 15 20 30 25 fig. 8 capacitance c iss c rss c -- capacitance (pf) -- v ds -- drain-to-source voltage (v) f = 1mhz v gs = 0v 1 0.1 0.01 10 100 0.3 0.5 0.7 0.9 1.1 1.3 1.5 1.7 1.9 -- i s -- source current (a) -- v sd -- source-to-drain voltage (v) t j = 125 c -- 55 c fig. 9 source-drain diode forward voltage v gs = 0 v fig. 10 transient thermal impedance fig. 11 power vs. pulse duration 0.1 0.01 0.001 0 10 20 30 40 50 60 70 1 10 100 single pulse r ja = 78 c/w t a = 25 c fig. 12 maximum safe operating area --i d -- drain current (a) --v ds -- drain-source voltage (v) 0.01 0.1 0.1 1 1 10 100 10 100 v gs = --10v single pulse r ja = 78 c/w t a = 25 c r ds(on) limit 100 s dc 10s c oss 25 c d = 0.5 0.2 0.1 0.05 0.02 single pulse 1. duty cycle, d = t 1 /t 2 2. r ja (t) = r ja(norm) *r ja 3. r ja = 78 c/w 4. t j -- t a = p dm * r ja (t) 0.01 1s 100ms 10ms 1ms
|
