mar.2003 140 130 110 0.25 43.8 36 130 tc measured point (base plate) tc measured point (base plate) 110 0.25 14.5 40 14.5 20.4 10 11.5 13.8 10 35 +1.0 ?.5 +1.0 ?.5 24.5 8 pps 65 20 (26) (26) (26) 4- 6.5mounting holes c2e1 e2 e2 g2 g1 e1 c1 4-m4 nuts 3-m8 nuts (15) label g2 e2 g1 e1 c2e e2 c1 9 (15) circuit diagram CM600DU-24NF application general purpose inverters & servo controls, etc mitsubishi igbt modules CM600DU-24NF high power switching use ? i c ................................................................... 600a ? v ces ......................................................... 1200v ? insulated type ? 2-elements in a pack outline drawing & circuit diagram dimensions in mm
mar.2003 v ce = v ces , v ge = 0v v ge = v ges , v ce = 0v t j = 25 c t j = 125 c v cc = 600v, i c = 600a, v ge = 15v v cc = 600v, i c = 600a v ge1 = v ge2 = 15v r g = 1.0 ? , inductive load switching operation i e = 600a i e = 600a, v ge = 0v igbt part (1/2 module) fwdi part (1/2 module) case to fin, thermal compound applied *2 (1/2 module) tc measured point is just under the chips i c = 60ma, v ce = 10v i c = 600a, v ge = 15v v ce = 10v v ge = 0v 1200 20 600 1200 600 1200 2080 ?0 ~ +150 ?0 ~ +125 2500 8.8 ~ 10.8 3.5 ~ 4.5 1.3 ~ 1.7 1200 mitsubishi igbt modules CM600DU-24NF high power switching use v v a a a a w c c v n ?m n ?m n ?m g 1 0.5 2.65 140 12 2.7 800 180 900 350 300 3.35 0.06 0.11 0.023 *3 10 ma a nf nf nf nc ns ns ns ns c v c/w c/w c/w c/w ? 1.95 2.15 4000 28 0.019 1.0 7v v 68 ns collector cutoff current gate leakage current input capacitance output capacitance reverse transfer capacitance total gate charge turn-on delay time turn-on rise time turn-off delay time turn-off fall time reverse recovery time reverse recovery charge emitter-collector voltage contact thermal resistance thermal resistance external gate resistance gate-emitter threshold voltage collector-emitter saturation voltage thermal resistance *1 i ces i ges c ies c oes c res q g t d(on) t r t d(off) t f t rr ( note 1 ) q rr ( note 1 ) v ec( note 1 ) r th(j-c) q r th(j-c) r r th(c-f) r th(j-c? q r g symbol parameter v ge(th) v ce(sat) * 1 : tc measured point is shown in page outline drawing. * 2 : typical value is measured by using shin-etsu silicone ?-746? * 3 : tc?measured point is just under the chips. if you use this value, r th(f-a) should be measured just under the chips. note 1. i e , v ec , t rr & q rr represent characteristics of the anti-parallel, emitter to collector free-wheel diode (fwdi). 2. pulse width and repetition rate should be such that the device junction temp. (t j ) does not exceed t jmax rating. 3. junction temperature (t j ) should not increase beyond 150 c. collector-emitter voltage gate-emitter voltage maximum collector dissipation junction temperature storage temperature isolation voltage torque strength weight g-e short c-e short dc, t c = 111 c *3 pulse (note 2) pulse (note 2) t c = 25 c main terminal to base plate, ac 1 min. main terminal m8 mounting holes m6 g(e) terminal m4 typical value symbol parameter collector current emitter current conditions unit ratings v ces v ges i c i cm i e ( note 1 ) i em ( note 1 ) p c ( note 3 ) t j t stg v iso unit ty p. limits min. max. maximum ratings (tj = 25 c) electrical characteristics (tj = 25 c) test conditions
mar.2003 mitsubishi igbt modules CM600DU-24NF high power switching use performance curves 1200 1000 400 200 800 600 0 046810 output characteristics (typical) collector current i c (a) collector-emitter voltage v ce (v) t j = 25 c 12 11 10 9 v ge = 20v 2 15 13 4 3 2 1 0 0 400 1200 800 1000 600 collector-emitter saturation voltage characteristics (typical) collector-emitter saturation voltage v ce (sat) (v) collector current i c (a) v ge = 15v t j = 25 c t j = 125 c 200 10 8 6 4 2 0 20 12 14 6 8 10 16 18 gate-emitter voltage v ge (v) collector-emitter saturation voltage characteristics (typical) collector-emitter saturation voltage v ce (sat) (v) t j = 25 c i c = 1200a i c = 240a i c = 600a 10 1 2 3 5 7 10 2 2 3 5 7 2 3 5 7 10 3 10 4 012 4 35 free-wheel diode forward characteristics (typical) emitter current i e (a) emitter-collector voltage v ec (v) t j = 25 c t j = 125 c 10 1 10 0 10 1 2 3 5 7 10 1 2 3 5 7 10 2 2 3 5 7 10 3 2 3 5 7 2 10 0 357 2 10 1 357 2 10 2 357 capacitance? ce characteristics (typical) capacitance c ies , c oes , c res (nf) collector-emitter voltage v ce (v) c ies c oes c res v ge = 0v 10 1 10 2 2 3 5 7 10 3 2 3 5 7 10 4 2 3 5 7 10 1 10 2 57 10 3 23 57 23 half-bridge switching characteristics (typical) switching time (ns) collector current i c (a) t d(off) t d(on) t f t r conditions: v cc = 600v, v ge = 15v, r g = 1 ? t j = 125 c, inductive load
mar.2003 mitsubishi igbt modules CM600DU-24NF high power switching use 10 1 10 2 23 57 10 3 23 57 10 1 10 2 2 3 5 7 10 3 2 3 5 7 t rr i rr reverse recovery characteristics of free-wheel diode (typical) emitter current i e (a) reverse recovery time t rr (ns) reverse recovery current l rr (a) conditions: v cc = 600v v ge = 15v r g = 1 ? t j = 25 c inductive load 10 3 10 5 10 4 10 0 7 5 3 2 10 2 7 5 3 2 10 1 7 5 3 2 10 3 23 57 23 57 23 57 23 57 10 1 10 2 10 1 10 0 10 3 10 3 7 5 3 2 10 2 7 5 3 2 10 1 23 57 23 57 single pulse t c = 25 c transient thermal impedance characteristics (igbt part & fwdi part) normalized transient thermal impedance z th (j c) tmie (s) igbt part: per unit base = r th(j c) = 0.06 c/ w fwdi part: per unit base = r th(j c) = 0.11 c/ w 0 4 8 16 12 20 0 1000 6000 2000 4000 5000 3000 gate charge characteristics (typical) gate-emitter voltage v ge (v) gate charge q g (nc) v cc = 600v v cc = 400v i c = 600a
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