feb.1999 mitsubishi transistor modules QM800HA-24B high power switching use insulated type QM800HA-24B outline drawing & circuit diagram dimensions in mm application ac motor controllers, ups, cvcf, dc motor controllers, nc equipment, welders 145 9 19 28 27 37 28 8 f 6.5 74 39 73 74 65 65 27 9 163 51 47 25 b e bx c e 16 3 16 3 34 3 34 3?4 2?8 45 50max. 47max. 44.5 42 8 b bx e e c label ? i c collector current ........................ 800a ? v cex collector-emitter voltage ......... 1200v ? h fe dc current gain............................. 750 ? insulated type ? ul recognized yellow card no. e80276 (n) file no. e80271
feb.1999 mitsubishi transistor modules QM800HA-24B high power switching use insulated type absolute maximum ratings (tj=25 c, unless otherwise noted) symbol v cex (sus) v cex v cbo v ebo i c Ci c p c i b Ci csm t j t stg v iso parameter collector-emitter voltage collector-emitter voltage collector-base voltage emitter-base voltage collector current collector reverse current collector dissipation base current surge collector reverse current (forward diode current) junction temperature storage temperature isolation voltage mounting torque weight conditions i c =1a, v eb =2v v eb =2v emitter open collector open dc dc (forward diode current) t c =25 c dc peak value of one cycle of 60hz (half wave) charged part to case, ac for 1 minute main terminal screw m8 mounting screw m6 b(e) terminal screw m4 bx terminal screw m4 typical value ratings 1200 1200 1200 7 800 800 5300 40 8000 C40~+150 C40~+125 2500 8.83~10.8 90~110 1.96~2.94 20~30 0.98~1.47 12~18 0.98~1.47 12~18 2100 unit v v v v a a w a a c c v nm kgcm nm kgcm nm kgcm nm kgcm g electrical characteristics (tj=25 c, unless otherwise noted) unit ma ma ma v v v m s m s m s c/w c/w c/w limits min. 750 symbol i cex i cbo i ebo v ce (sat) v be (sat) Cv ceo h fe t on t s t f r th (j-c) q r th (j-c) r r th (c-f) parameter collector cutoff current collector cutoff current emitter cutoff current collector-emitter saturation voltage base-emitter saturation voltage collector-emitter reverse voltage dc current gain switching time thermal resistance (junction to case) contact thermal resistance (case to fin) test conditions v ce =1200v, v eb =2v v cb =1200v,emitter open v eb =7v, collector open i c =800a, i b =1.06a i c =C800a (diode forward voltage) i c =800a, v ce =4.0v v cc =600v, i c =800a, i b1 =1.6a, Ci b2 =16a transistor part diode part conductive grease applied typ. max. 8.0 8.0 600 4.0 4.2 1.8 2.5 20 5.0 0.023 0.12 0.01
feb.1999 7 5 4 3 2 7 5 4 3 2 2.6 3.0 3.4 3.8 v ce =4v t j =25? 4.2 4.6 ? 10 0 10 1 10 ? 10 7 5 3 2 7 5 3 2 7 5 3 2 5 4 3 2 1 0 t j =25? t j =125? 0 10 ? 10 1 10 i c =600a i c =1000a i c =800a 23457 7 5 4 3 2 7 5 4 3 2 23457 t j =25? t j =125? 4 10 3 10 2 10 1 10 2 10 3 10 v ce =4.0v 7 5 4 3 2 7 5 4 3 2 23457 23457 t j =25? t j =125? ? 10 i b =1.06a v be(sat) v ce(sat) 1 10 0 10 1 10 2 10 3 10 7 5 4 3 2 7 5 4 3 2 0 0.4 0.8 1.2 1.6 2.0 t j =25? t j =125? 1 10 2 10 3 10 1000 800 600 400 200 0 012345 t j =25? i b =250ma i b =1.06a i b =4a i b =0.5a performance curves common emitter output characteristics (typical) common emitter input characteristic (typical) saturation voltage characteristics (typical) collector-emitter saturation voltage (typical) dc current gain vs. collector current (typical) collector current i c (a) dc current gain h fe collector-emitter voltage v ce (v) collector current i c (a) base current i b (a) collector-emitter saturation voltage v ce (sat) (v) saturation voltage v ce (sat) , v be (sat) (v) collector current i c (a) base-emitter voltage v be (v) base current i b (a) mitsubishi transistor modules QM800HA-24B high power switching use insulated type reverse collector current vs. collector-emitter reverse voltage (diode forward characteristics) (typical) collector-emitter reverse voltage Cv ceo (v) collector reverse current Ci c (a)
feb.1999 1600 0 0 400 800 1200 400 800 1200 1600 t j =125? i b =?6a mitsubishi transistor modules QM800HA-24B high power switching use insulated type reverse bias safe operating area collector-emitter voltage v ce (v) collector current i c (a)
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