unisonic technologies co., ltd 4n80 power mosfet www.unisonic.com.tw 1 of 6 copyright ? 2012 unisonic technologies co., ltd qw-r502-505.d 4.0 a , 800v n-channel power mosfet ? description the utc 4n80 is a n-channel mode power mosfet using utc?s advanced technology to provide costomers planar stripe and dmos technology. this technology is specialized in allowing a minimum on-state resistance, and superior switching performance. it also can withstand high energy pulse in the avalanche and commutation mode. the utc 4n80 is universally applied in high efficiency switch mode power supply. ? features * r ds(on) =3.0 ? @v gs =10v * high switching speed * improved dv/dt capability * 100% avalanche tested ? symbol 1.gate 3.source 2.drain to-220 1 1 to-220f to-252 1 1 to-220f1 ? ordering information ordering number package pin assignment packing lead free halogen free 1 2 3 4n80l-ta3-t 4N80G-TA3-T to-220 g d s tube 4n80l-tf3-t 4n80g-tf3-t to-220f g d s tube 4n80l-tf1-t 4n80g-tf1-t to-220f1 g d s tube 4n80l-tn3-r 4n80g-tn3-r to-252 g d s tape reel 4n80l-tn3-t 4n80g-tn3-t to-252 g d s tube note: pin assignment: g: gate d: drain s: source
4n80 power mosfet unisonic technologies co., ltd 2 of 6 www.unisonic.com.tw qw-r502-505.d ? absolute maximum ratings (t c =25c, unless otherwise specified) parameter symbol ratings unit drain-source voltage v dss 800 v gate-source voltage v gss 30 v drain current continuous i d 4.0 a pulsed (note 2) i dm 16 a avalanche energy single pulsed (note 3) e as 460 mj repetitive (note 2) e ar 13 mj peak diode recovery dv/dt (note 4) dv/dt 4.0 v/ns power dissipation to-220 p d 106 w to-220f/to-220f1 36 w to-252 50 w junction temperature t j +150 c storage temperature t stg -55~+150 c note: 1. absolute maximum ratings are those values beyond which the device could be permanently damaged. absolute maximum ratings are stress ratings only and functional device oper ation is not implied. 2. repetitive rating: pulse width lim ited by maximum junction temperature 3. l=57mh, i as =4a, v dd = 50v, r g =25 ? , starting t j =25c 4. i sd 4a, di/dt 200a/ s, v dd bv dss , starting t j =25c ? thermal data parameter symbol ratings unit junction to ambient to-220 ja 62.5 c/w to-220f/to-220f1 62.5 c/w to-252 110 c/w junction to case to-220 jc 1.18 c/w to-220f/to-220f1 3.47 c/w to-252 2.5 c/w
4n80 power mosfet unisonic technologies co., ltd 3 of 6 www.unisonic.com.tw qw-r502-505.d ? electrical characteristics (t c =25c, unless otherwise specified) parameter symbol test conditions min typ max unit off characteristics drain-source breakdown voltage bv dss v gs =0v, i d =250a 800 v breakdown voltage temperature coefficient bv dss / t j i d =250 a,referenced to 25c 950 mv/c drain-source leakage current i dss v ds =800v, v gs =0v 10 a v ds =640v, t c =125c 100 a gate-source leakage current forward i gss v ds =0v ,v gs =30v 100 na reverse v ds =0v ,v gs =-30v -100 na on characteristics gate threshold voltage v gs ( th ) v ds =v gs , i d =250a 3.0 5.0 v drain-source on-state resistance r ds ( on ) v gs =10v, i d =2a 2.3 3.0 ? dynamic parameters input capacitance c iss v ds =25v,v gs =0v,f=1.0mhz 680 880 pf output capacitance c oss 75 100 pf reverse transfer capacitance c rss 8.6 12 pf switching parameters total gate charge q g v ds =640v, v gs =10v, i d =4a (note 1,2) 19 25 nc gate-source charge q gs 4.2 nc gate-drain charge q gd 9.1 nc turn-on delay time t d ( on ) v dd =400v, i d =4a, r g =25 ? (note 1,2) 16 40 ns turn-on rise time t r 45 100 ns turn-off delay time t d ( off ) 35 80 ns turn-off fall time t f 35 80 ns source- drain diode ratings and characteristics maximum body-diode continuous current i s 4 a maximum body-diode pulsed current i sm 16 a drain-source diode forward voltage v sd i s =4a, v gs =0v 1.4 v body diode reverse recovery time t r r v gs =0v, i s =4a, di f /dt=100a/ s (note 1) 575 ns body diode reverse recovery charge q rr 3.65 c note: 1. pulse test: pulse width 300s, duty cycle 2% 2. essentially independent of operating temperature
4n80 power mosfet unisonic technologies co., ltd 4 of 6 www.unisonic.com.tw qw-r502-505.d ? test circuits and waveforms same type as d.u.t. l v dd driver v gs r g - v ds d.u.t. + * dv/dt controlled by r g * i sd controlled by pulse period * d.u.t.-device under test - + peak diode recovery dv/dt test circuit p. w. period d= v gs (driver) i sd (d.u.t.) i fm , body diode forward current di/dt i rm body diode reverse current body diode recovery dv/dt body diode forward voltage drop v dd 10v v ds (d.u.t.) v gs = p.w. period peak diode recovery dv/dt waveforms
4n80 power mosfet unisonic technologies co., ltd 5 of 6 www.unisonic.com.tw qw-r502-505.d ? test circuits and waveforms(cont.) v ds 90% 10% v gs t d(on) t r t d(off) t f switching test circuit switching waveforms 10v charge q gs q gd q g v gs gate charge test circui t gate charge waveform v dd t p time bv dss i as i d(t) v ds(t) unclamped inductive switching test circuit unclamped inductive switching waveforms
4n80 power mosfet unisonic technologies co., ltd 6 of 6 www.unisonic.com.tw qw-r502-505.d ? typical characteristics drain current vs. drain-source breakdown voltage drain current, i d (a) drain-source breakdown voltage, bv dss (v) 0 drain current vs. gate threshold voltage drain current, i d (a) gate threshold voltage, v th (v) 25 13 0 50 100 150 200 250 300 0 200 600 800 1000 400 0 50 100 150 200 250 300 1200 4 drain current, i d (a) utc assumes no responsibility for equipment failures that result from using products at values that exceed, even momentarily, rated values (such as maximum ratings, operating condition ranges, or other parameters) listed in products specifications of any and all utc products described or contained herein. utc products are not designed for use in life support appliances, devices or systems where malfunction of these products can be reasonably expected to result in personal injury. reproduction in whole or in part is prohibited without the prior written consent of the copyright owner. the information presented in this document does not form part of any quotation or contract, is believed to be accurate and reliable and may be changed without notice.
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