2SD2387 2003-02-04 1 toshiba transistor silicon npn triple diffused type (darlington power transistor) 2SD2387 power amplifier applications high breakdown voltage: v ceo = 140 v (min) complementary to 2sb1558 maximum ratings (ta = 25c) characteristics symbol rating unit collector-base voltage v cbo 140 v collector-emitter voltage v ceo 140 v emitter-base voltage v ebo 5 v collector current i c 8 a base current i b 0.1 a collector power dissipation (tc = 25c) p c 80 w junction temperature t j 150 c storage temperature range t stg ? 55 to 150 c equivalent circuit unit: mm jedec D jeita D toshiba 2-16c1a weight: 4.7 g (typ.) base emitter 100 ? collector
2SD2387 2003-02-04 2 electrical characteristics (ta = 25c) characteristics symbol test condition min typ. max unit collector cut-off current i cbo v cb = 140 v, i e = 0 D D 5.0 a emitter cut-off current i ebo v eb = 5 v, i c = 0 D D 5.0 a collector-emitter breakdown voltage v (br) ceo i c = 50 ma, i b = 0 140 D D v h fe (1) (note) v ce = 5 v, i c = 7 a 5000 D 30000 dc current gain h fe (2) v ce = 5 v, i c = 12 a 2000 D D collector-emitter saturation voltage v ce (sat) i c = 7 a, i b = 7 ma D D 2.5 v base-emitter voltage v be v ce = 5 v, i c = 7 a D D 3.0 v transition frequency f t v ce = 5 v, i c = 1 a D 30 D mhz collector output capacitance c ob v cb = 10 v, i e = 0, f = 1 mhz D 110 D pf note: h fe (1) classification a: 5000 to 12000, b: 9000 to 18000, c: 15000 to 30000 marking explanation of lot no. month of manufacture (january to december are denoted by letters a to l respectively.) year of manufacture (last decimal digit of the year of manufacture) product no. lot no. d2387 h fe classification (a/b/c) toshiba
2SD2387 2003-02-04 3 ambient temperature ta (c) p c ? ta collector power dissipation p c (w) 0 0 20 tc = ta infinite heat sink 60 100 25 50 75 100 125 175 150 40 80 120 collector-emitter voltage v ce (v) safe operating area collector current i c (a) 10 30 50 100 0.3 5 20 0.5 1 3 5 10 *: single nonrepetitive pulse tc = 25c curves must be derated linearly with increase in temperature. i c max (continuous) i c max (pulsed)* 10 ms* 100 ms* dc operation tc = 25c 300 v ceo max base-emitter voltage v be (v) i c ? v be collector current i c (a) h fe ? i c dc current gain h fe collector current i c (a) 50000 300 0.03 500 1000 3000 5000 10000 30000 0.3 1 50 tc = 100c 25 ? 25 0.1 3 100 10 30 common emitter v ce = 5 v collector-emitter voltage v ce (v) i c ? v ce collector current i c (a) collector current i c (a) v ce (sat) ? i c collector-emitter saturation voltage v ce (sat) (v) 0 0 4 8 1 2 3 4 common emitter v ce = 5 v 5 2 6 10 tc = 100c 25 ? 25 0 0 4 8 2 4 6 8 i b = 100 a 500 300 200 150 common emitter tc = 25c 10 2 6 10 250 350 400 450 0.3 5 0.03 0.05 0.3 0.5 1 5 0.1 3 10 tc = 100c ? 25 25 common emitter i c /i b = 250 1 0.5 3 0.1
2SD2387 2003-02-04 4 toshiba is continually working to improve the quality and reliability of its products. nevertheless, semiconductor devices in general can malfunction or fail due to their inherent electrical sensitivity and vulnerability to physical stress. it is the responsibility of the buyer, when utilizing toshiba products, to comply with the standards of safety in making a safe design for the entire system, and to avoid situations in which a malfunction or failure of such toshiba products could cause loss of human life, bodily injury or damage to property. in developing your designs, please ensure that toshiba products are used within specified operating ranges as set forth in the most recent toshiba products specifications. also, please keep in mind the precautions and conditions set forth in the ?handling guide for semiconductor devices,? or ?toshiba semiconductor reliability handbook? etc.. the toshiba products listed in this document are intended for usage in general electronics applications (computer, personal equipment, office equipment, measuring equipment, industrial robotics, domestic appliances, etc.). these toshiba products are neither intended nor warranted for usage in equipment that requires extraordinarily high quality and/or reliability or a malfunction or failure of which may cause loss of human life or bodily injury (?unintended usage?). unintended usage include atomic energy control instruments, airplane or spaceship instruments, transportation instruments, traffic signal instruments, combustion control instruments, medical instruments, all types of safety devices, etc.. unintended usage of toshiba products listed in this document shall be made at the customer?s own risk. the information contained herein is presented only as a guide for the applications of our products. no responsibility is assumed by toshiba corporation for any infringements of intellectual property or other rights of the third parties which may result from its use. no license is granted by implication or otherwise under any intellectual property or other rights of toshiba corporation or others. the information contained herein is subject to change without notice. 000707ea a restrictions on product use
|
