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Datasheet File OCR Text: |
sot-23 plastic-encapsulate mosfets n-channel 20-v(d-s) mosfet applications z dc/dc converters z load switching for portable applications marking: s12 maximum ratings (t a =25 unless otherwise noted) parameter symbol value unit drain-source voltage v ds 20 gate-source voltage v gs 8.0 v continuous drain current t=5s i d 5 pulsed drain current i dm 20 continuous source-drain diode current i s 1.04 a maximum power dissipation t=5s p d 0.3 5 w thermal resistance from junction to ambient r ja 357 /w junction temperature t j 150 storage temperature t stg -50 ~+150 so t -23 1. gate 2. source 3. drain 2012-10 willas electronic corp. SE2312 z
electrical characteristics (t a =25 unless otherwise noted) parameter symbol test condition min typ max unit static ? 6 dynamic ? ? ? drain-source body diode characteristics notes : 2012-10 willas electronic corp. sot-23 plastic-encapsulate mosfets SE2312 012345 0 4 8 12 16 0.40.60.81.01.21.41.61.8 0 2 4 6 8 10 0.0 0.2 0.4 0.6 0.8 1.0 1.2 1e-3 0.01 0.1 1 10 02468 20 40 60 80 100 0246810121416 10 20 30 40 50 60 typical characteristics ta=25 o c v gs =2 thru 4.5 v gs =1.5v v gs =1v drain current i d (a) drain to source voltage v ds (v) output characteristics drain current i d (a) gate to source voltage v gs (v) ta=25 o c transfer characteristics 20 ta=25 o c source current i s (a) source to drain voltage v sd (v) v sd i s v gs r ds(on) ta=25 o c on-resistance r ds(on) (m ? ) gate to source voltage v gs (v) i d =3.0a v gs =1.8v v gs =2.5v v gs =4.5v i d r ds(on) on-resistance r ds(on) (m ? ) drain current i d (a) ta=25 o c 2012-10 willas electronic corp. sot-23 plastic-encapsulate mosfets SE2312 outline drawing dimensions in inches and (millimeters) sot-23 rev.d .080(2.04) .070(1.78) .110(2.80) .083(2.10) .006(0.15)min. .008(0.20) .003(0.08) .055(1.40) .035(0.89) .020(0.50) .012(0.30) .004(0.10)max. .122(3.10) .106(2.70) .063(1.60) .047(1.20) 2012-10 willas electronic corp. sot-23 plastic-encapsulate mosfets SE2312 |
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