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tm may 2012 fdp13n50f / fdpf13n 50ft n-channel mosfet ?2012 fairchild semiconductor corporation fdp13n50f / fdpf13n50ft rev.c1 www.fairchildsemi.com 1 unifet tm fdp13n50f / fdpf13n50ft n-channel mosfet 500v, 12a, 0.54 features ?r ds(on) = 0.42 ( typ.)@ v gs = 10v, i d = 6a ? low gate charge ( typ. 30nc) ? low c rss ( typ. 14.5pf) ? fast switching ? 100% avalanche tested ? improved dv/dt capability ? rohs compliant description these n-channel enhancement mode power field effect transistors are produced using fairchild?s proprietary, planar stripe, dmos technology. this advanced technology has be en especially tailored to minimize on-state resistance, provide superior switching performance, and withstand high energy pulse in the avalanche and commutation mode. these devices are well suited for high efficient switched mode power s upplies and active power factor correction. g s d d g s to-220f fdpf series g s d to-220 fdp series mosfet maximum ratings t c = 25 o c unless otherwise noted* thermal characteristics symbol parameter fdp13n50f fdpf13n50ft units v dss drain to source voltage 500 v v gss gate to source voltage 30 v i d drain current -continuous (t c = 25 o c) 12 12* a -continuous (t c = 100 o c) 7.2 7.2* i dm drain current - pulsed (note 1) 48 48* a e as single pulsed avalanche energy (note 2) 684 mj i ar avalanche current (note 1) 12 a e ar repetitive avalanche energy (note 1) 19.5 mj dv/dt peak diode recovery dv/dt (note 3) 20 v/ns p d power dissipation (t c = 25 o c) 195 42 w - derate above 25 o c 1.53 0.33 w/ o c t j , t stg operating and storage temperature range -55 to +150 o c t l maximum lead temperature for soldering purpose, 1/8? from case for 5 seconds 300 o c symbol parameter fdp13n50f fdpf13n50ft units r jc thermal resistance, junction to case 0.65 3.0 o c/w r cs thermal resistance, case to sink typ. 0.5 - r ja thermal resistance, junction to ambient 62.5 62.5 *drain current limited by maximum junction temperature
fdp13n50f / fdpf13n 50ft n-channel mosfet fdp13n50f / fdpf13n50ft rev.c1 www.fairchildsemi.com 2 package marking and ordering information t c = 25 o c unless otherwise noted electrical characteristics off characteristics on characteristics dynamic characteristics switching characteristics drain-source diod e characteristics device marking device package reel size tape width quantity fdp13n50f fdp13n50f to-220 - - 50 fdpf13n50ft fdpf13n50ft to-220f - - 50 symbol parameter test conditions min. typ. max. units bv dss drain to source breakdown voltage i d = 250 a, v gs = 0v, t j = 25 o c 500 - - v bv dss t j breakdown voltage temperature coefficient i d = 250 a, referenced to 25 o c-0.7-v/ o c i dss zero gate voltage drain current v ds = 500v, v gs = 0v - - 10 a v ds = 400v, t c = 125 o c - - 100 i gss gate to body leakage current v gs = 20v, v ds = 0v - - 100 na v gs(th) gate threshold voltage v gs = v ds , i d = 250 a3.0-5.0v r ds(on) static drain to source on resistance v gs = 10v, i d = 6a - 0.42 0.54 g fs forward transconductance v ds = 20v, i d = 6a (note 4) - 13.3 - s c iss input capacitance v ds = 25v, v gs = 0v f = 1mhz - 1450 1930 pf c oss output capacitance - 198 265 pf c rss reverse transfer capacitance - 14.5 22 pf q g(tot) total gate charge at 10v v ds = 400v, i d = 13a v gs = 10v (note 4, 5) -3039nc q gs gate to source gate charge - 8 - nc q gd gate to drain ?miller? charge - 12 - nc t d(on) turn-on delay time v dd = 250v, i d = 13a r g = 25 (note 4, 5) -2865ns t r turn-on rise time - 54 120 ns t d(off) turn-off delay time - 75 160 ns t f turn-off fall time - 47 105 ns i s maximum continuous drain to source diode forward current - - 12 a i sm maximum pulsed drain to source diode forward current - - 48 a v sd drain to source diode forward voltage v gs = 0v, i sd = 12a - - 1.5 v t rr reverse recovery time v gs = 0v, i sd = 12a di f /dt = 100a/ s (note 4) - 154 - ns q rr reverse recovery charge - 0.45 - c notes: 1. repetitive rating: pulse width limited by maximum junction temperature 2. l = 9.5mh, i as = 12a, v dd = 50v, r g = 25 , starting t j = 25 c 3. i sd 12a, di/dt 200a/ s, v dd bv dss , starting t j = 25 c 4. pulse test: pulse width 300 s, duty cycle 2% 5. essentially independent of operating temperature typical characteristics fdp13n50f / fdpf13n 50ft n-channel mosfet fdp13n50f / fdpf13n50ft rev.c1 www.fairchildsemi.com 3 typical performance characteristics figure 1. on-region characteristics figure 2. transfer characteristics figure 3. on-resistance variation vs. figure 4. body diode forward voltage drain current and gate vo ltage variation vs. source current and temperature figure 5. capacitance characteristics figure 6. gate charge characteristics 110 1 10 20 30 *notes: 1. 250 s pulse test 2. t c = 25 o c v gs = 15.0 v 10.0 v 8.0 v 7.0 v 6.5 v 6.0 v 5.5 v i d ,drain current[a] v ds ,drain-source voltage[v] 345678 1 10 150 o c *notes: 1. v ds = 20v 2. 250 s pulse test 25 o c i d ,drain current[a] v gs ,gate-source voltage[v] 50 0 10203040 0.3 0.4 0.5 0.6 0.7 0.8 0.9 *note: t j = 25 o c v gs = 20v v gs = 10v r ds(on) [ ] , drain-source on-resistance i d , drain current [a] 0.0 0.5 1.0 1.5 2.0 2.5 1 10 100 *notes: 1. v gs = 0v 2. 250 s pulse test 150 o c i s , reverse drain current [a] v sd , body diode forward voltage [v] 25 o c 0.1 1 10 0 1500 3000 c oss c iss c iss = c gs + c gd ( c ds = shorted ) c oss = c ds + c gd c rss = c gd *note: 1. v gs = 0v 2. f = 1mhz c rss capacitances [pf] v ds , drain-source voltage [v] 30 0 5 10 15 20 25 30 0 2 4 6 8 10 *note: i d = 13a v ds = 100v v ds = 250v v ds = 400v v gs , gate-source voltage [v] q g , total gate charge [nc] fdp13n50f / fdpf13n 50ft n-channel mosfet fdp13n50f / fdpf13n50ft rev.c1 www.fairchildsemi.com 4 typical performance characteristics (continued) figure 7. breakdown voltage variation figure 8. maximum safe operating area vs. temperature - fdpf13n50ft figure 9. maximum drain current vs. case temperature figure 10. transient thermal response curve - fdpf13n50ft -100 -50 0 50 100 150 200 0.8 0.9 1.0 1.1 1.2 *notes: 1. v gs = 0v 2. i d = 250 a bv dss , [normalized] drain-source breakdown voltage t j , junction temperature [ o c ] 1 10 100 1000 0.01 0.1 1 10 100 30 s 100 s 1ms 10ms i d , drain current [a] v ds , drain-source voltage [v] operation in this area is limited by r ds(on) *notes: 1. t c = 25 o c 2. t j = 150 o c 3. single pulse dc 25 50 75 100 125 150 0 2 4 6 8 10 12 14 i d , drain current [a] t c , case temperature [ o c ] 10 -4 10 -3 10 -2 10 -1 10 0 10 1 10 2 10 3 0.01 0.1 1 0.01 0.1 0.2 0.05 0.02 *notes: 1. z jc (t) = 3 o c/w max. 2. duty factor, d= t 1 /t 2 3. t jm - t c = p dm * z jc (t) 0.5 single pulse thermal response [ z jc ] rectangular pulse duration [sec] 5 t 1 p dm t 2 fdp13n50f / fdpf13n 50ft n-channel mosfet fdp13n50f / fdpf13n50ft rev.c1 www.fairchildsemi.com 5 gate charge test circuit & waveform resistive switching test circuit & waveforms unclamped inductive switching test circuit & waveforms fdp13n50f / fdpf13n 50ft n-channel mosfet fdp13n50f / fdpf13n50ft rev.c1 www.fairchildsemi.com 6 peak diode recovery dv/dt test circuit & waveforms dut v ds + _ driver r g same type as dut v gs ? dv/dt controlled by r g ?i sd controlled by pulse period v dd l i sd 10v v gs ( driver ) i sd ( dut ) v ds ( dut ) v dd body diode forward voltage drop v sd i fm , body diode forward current body diode reverse current i rm body diode recovery dv/dt di/dt d = gate pulse width gate pulse period -------------------------- dut v ds + _ driver r g same type as dut v gs ? dv/dt controlled by r g ?i sd controlled by pulse period v dd l l i sd 10v v gs ( driver ) i sd ( dut ) v ds ( dut ) v dd body diode forward voltage drop v sd i fm , body diode forward current body diode reverse current i rm body diode recovery dv/dt di/dt d = gate pulse width gate pulse period -------------------------- d = gate pulse width gate pulse period -------------------------- fdp13n50f / fdpf13n 50ft n-channel mosfet fdp13n50f / fdpf13n50ft rev.c1 www.fairchildsemi.com 7 mechanical dimensions 4.50 0.20 9.90 0.20 1.52 0.10 0.80 0.10 2.40 0.20 10.00 0.20 1.27 0.10 ?.60 0.10 (8.70) 2.80 0.10 15.90 0.20 10.08 0.30 18.95max. (1.70) (3.70) (3.00) (1.46) (1.00) (45 ) 9.20 0.20 13.08 0.20 1.30 0.10 1.30 +0.10 ?.05 0.50 +0.10 ?.05 2.54typ [2.54 0.20 ] 2.54typ [2.54 0.20 ] to-220 fdp13n50f / fdpf13n 50ft n-channel mosfet fdp13n50f / fdpf13n50ft rev.c1 www.fairchildsemi.com 8 package dimensions dimensions in millimeters to-220f potted * front/back side isolation voltage : ac 2500v fdp13n50f / fdpf13n50ft n-channel mosfet fdp13n50f / fdpf13n50ft rev.c1 www.fairchildsemi.com 9 trademarks the following includes registered and unregistered trademarks and se rvice marks, owned by fairchild semiconductor and/or its gl obal subsidiaries, and is not intended to be an exhaustive list of all such trademarks. *trademarks of system general corporation, used under license by fairchild semiconductor. disclaimer fairchild semiconductor reserves the right to make changes wi thout further notice to any products herein to improve reliability, function, or design. fairchild does not assume any li ability arising out of the application or use of any product or circuit described herein; neither does it convey any license under its patent rights, nor the rights of others. these specifications do not expand the terms of fairchild?s worldwid e terms and conditions, specifically the warranty therein, which covers these products. life support policy fairchild?s products are not authorized for use as critical components in life support d evices or systems without the express written approval of fairchild semiconductor corporation. as used here in: 1. life support devices or systems ar e devices or systems which, (a) are intended for surgical implant into the body or (b) support or sustain life, and (c) whose failure to perform when properly used in accordance with instructions for use provided in the labeling, can be reasonably expected to result in a sign ificant injury of the user. 2. a critical component in any com ponent of a life su pport, device, or system whose failure to perform can be reasonably ex pected to cause the failure of the life sup port device or system, or to affect its safety or effectiveness. product status definitions definition of terms 2cool? accupower? ax-cap?* bitsic ? build it now? coreplus? corepower? crossvolt ? ctl? current transfer logic? deuxpeed ? dual cool? ecospark ? efficentmax? esbc? fairchild ? fairchild semiconductor ? fact quiet series? fact ? fast ? fastvcore? fetbench? flashwriter ? * fps? f-pfs? frfet ? global power resource sm green bridge? green fps? green fps? e-series? g max ? gto? intellimax? isoplanar? marking small speakers sound louder and better? megabuck? microcoupler? microfet? micropak? micropak2? millerdrive? motionmax? motion-spm? mwsaver? optohit? optologic ? optoplanar ? powertrench ? powerxs? programmable active droop? qfet ? qs? quiet series? rapidconfigure? saving our world, 1mw/w/kw at a time? signalwise? smartmax? smart start? solutions for your success? spm ? stealth? superfet ? supersot?-3 supersot?-6 supersot?-8 supremos ? syncfet? sync-lock? ?* the power franchise ? ? tinyboost? tinybuck? tinycalc? tinylogic ? tinyopto? tinypower? tinypwm? tinywire? transic ? trifault detect? truecurrent ? * serdes? uhc ? ultra frfet? unifet? vcx? visualmax? voltageplus? xs? ? ? tm datasheet identification product status definition advance information for mative / in design datasheet contains the design specifications for product developm ent. specifications may change in any manner without notice. preliminary first production datasheet contains preliminary data; supplementary data will be published at a later date. fairchild semiconductor reserves the ri ght to make changes at any time without notice to improve design. no identification n eeded full production datasheet contains final specifications. fair child semiconductor reserves the right to make changes at any time without notice to improve the design. obsolete not in production datasheet contains specifications on a product t hat is discontinued by fairchild semiconductor. the datasheet is for reference information only. anti-counterfeiting policy fairchild semiconductor corporation?s anti-c ounterfeiting policy. fairchild?s anti-co unterfeiting policy is also stated on our external website, www.fairchildsemi.com, under sales support . counterfeiting of semiconductor parts is a growing problem in th e industry. all manufactures of semiconductor products are expe riencing counterfeiting of their parts. customers who inadvertently purchase counterfeit parts experience many probl ems such as loss of brand reputation, substa ndard performance, failed application, and increased cost of producti on and manufacturing delays. fairchild is taking strong measures to protect ourselve s and our customers from the proliferation of counterfeit parts . fairchild strongly encourages customers to purchase fairchild parts either directly from fa irchild or from authorized fairchild distributors who are listed by co untry on our web page cited above. products custom ers buy either from fairchild directly or fr om authorized fairchild distributors are genuine parts, have fu ll traceability, meet fairchild?s quality st andards for handing and storage and provide access to fairchild?s full range of up-to-date technical and product inform ation. fairchild and our authorized dist ributors will stand behind all warranties and wi ll appropriately address and warranty issues that may arise. fairchild will not provide any warranty coverage or other assistance for parts bought from unau thorized sources. fairchild is committed to combat this global problem and encourage our custom ers to do their part in stopping this practice by buying direct or from authorized distributors. rev. i61 tm ? 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