?2011 fairchild semiconductor corporation may 2011 isl9r3060g2, isl9r3060p2 rev. c4 isl9r3060g2, isl9r3060p2 isl9r3060g2, isl9r3060p2 30a, 600v stealth? diode general description the isl9r3060g2 and isl9r3060p2 are stealth? diodes optimized for low loss performance in high frequency hard switched applications. the stealth? family exhibits low reverse recovery current (i rrm ) and exceptionally soft recovery under typical operating conditions. this device is intended for use as a free wheeling or boost diode in power supplies and other power switching applications. the low i rrm and short t a phase reduce loss in switching transistors. the soft recovery minimizes ringing, expanding the range of conditions under which the diode may be operated without the use of additional snubber circuitry. consider using the stealth? diode with an smps igbt to provide the most efficient and highest power density design at lower cost. formerly developmental type ta49411. features ? soft recovery . . . . . . . . . . . . . . . . . . . . . . . . t b / t a > 1.2 ? fast recovery . . . . . . . . . . . . . . . . . . . . . . . . . t rr < 35ns ? operating temperature . . . . . . . . . . . . . . . . . . . . 175 o c ? reverse voltage. . . . . . . . . . . . . . . . . . . . . . . . . . . 600v ? avalanche energy rated applications ? switch mode power supplies ? hard switched pfc boost diode ? ups free wheeling diode ? motor drive fwd ? smps fwd ? snubber diode device maximum ratings t c = 25c unless otherwise noted symbol parameter ratings units v rrm peak repetitive reverse voltage 600 v v rwm working peak reverse voltage 600 v v r dc blocking voltage 600 v i f(av) average rectified forward current 30 a i frm repetitive peak surge current (20khz square wave) 70 a i fsm nonrepetitive peak surge current (halfwave 1 phase 60hz) 325 a p d power dissipation 200 w e avl avalanche energy (1a, 40mh) 20 mj t j , t stg operating and storage temperature range -55 to 175 c t l t pkg maximum temperature for soldering leads at 0.063in (1.6mm) from case for 10s package body for 10s, see techbrief tb334 300 260 c c caution: stresses above those listed in ?device maximum ratings? may cause permanent damage to the device. this is a stress onl y rating and operation of the device at these or any other conditions above those indicated in the operational sections of this specificatio n is not implied. k a cathode (flange) cathode ( bottom side cathode anode metal) jedec to-220ac jedec style 2 lead to-247 anode cathode package symbol
?2011 fairchild semiconductor corporation isl9r3060g2, isl9r3060p2 rev. c4 isl9r3060g2, isl9r3060p2 package marking and ordering information electrical characteristics t c = 25c unless otherwise noted off state characteristics on state characteristics dynamic characteristics switching characteristics thermal characteristics device marking device package tape width quantity r3060g2 isl9r3060g2 to-247 - - r3060p2 isl9r3060p2 to-220ac - - symbol parameter test conditions min typ max units i r instantaneous reverse current v r = 600v t c = 25c - - 100 a t c = 125c - - 1.0 ma v f instantaneous forward voltage i f = 30a t c = 25c - 2.1 2.4 v t c = 125c - 1.7 2.1 v c j junction capacitance v r = 10v, i f = 0a - 120 - pf t rr reverse recovery time i f = 1a, d if /dt = 100a/ s, v r = 30v - 27 35 ns i f = 30a, d if /dt = 100a/ s, v r = 30v - 36 45 ns t rr reverse recovery time i f = 30a, d if /dt = 200a/ s, v r = 390v, t c = 25c -36-ns i rrm maximum reverse recovery current - 2.9 - a q rr reverse recovery charge - 55 - nc t rr reverse recovery time i f = 30a, d if /dt = 200a/ s, v r = 390v, t c = 125c -110- ns s softness factor (t b /t a )-1.9- i rrm maximum reverse recovery current - 6 - a q rr reverse recovery charge - 450 - nc t rr reverse recovery time i f = 30a, d if /dt = 1000a/ s, v r = 390v, t c = 125c -60-ns s softness factor (t b /t a ) - 1.25 - i rrm maximum reverse recovery current - 21 - a q rr reverse recovery charge 730 - nc di m /dt maximum di/dt during t b - 800 - a/s r jc thermal resistance junction to case - - 0.75 c/w r ja thermal resistance junction to ambient to-247 - - 30 c/w r ja thermal resistance junction to ambient to-220 - - 62 c/w
?2011 fairchild semiconductor corporation isl9r3060g2, isl9r3060p2 rev. c4 isl9r3060g2, isl9r3060p2 typical performance curves figure 1. forward current vs forward voltage figure 2. reverse current vs reverse voltage figure 3. t a and t b curves vs forward current figure 4. t a and t b curves vs di f /dt figure 5. maximum reverse recovery current vs forward current figure 6. maximum reverse recovery current vs di f /dt v f , forward voltage (v) i f , forward current (a) 60 50 40 0 0 1.0 2.0 3.0 30 20 10 0.5 1.5 2.5 25 o c 175 o c 100 o c 150 o c 125 o c 10 v r , reverse voltage (v) i r , reverse current ( a) 100 100 200 500 600 400 1000 1 0.1 175 o c 25 o c 100 o c 300 5000 75 o c 150 o c 125 o c i f , forward current (a) 0 0 20 40 60 80 100 20 60 t, recovery times (ns) t b at di f /dt = 200a/s, 500a/s, 800a/s v r = 390v, t j = 125c 10 30 40 50 t a at di f /dt = 200a/s, 500a/s, 800a/s 90 70 50 30 10 di f /dt, current rate of change (a/ s) 0 20 40 60 80 120 t, recovery times (ns) v r = 390v, t j = 125c t b at i f = 60a, 30a, 15a 1000 1600 1400 400 200 600 800 1200 t a at i f = 60a, 30a, 15a 100 i f , forward current (a) 4 8 10 12 14 18 20 i rrm , max reverse recovery current (a) di f /dt = 800a/s di f /dt = 500a/s di f /dt = 200a/s v r = 390v, t j = 125c 020 60 10 30 40 50 6 16 di f /dt, current rate of change (a/ s) 0 5 10 15 20 25 1000 1600 v r = 390v, t j = 125c i f = 60a i f = 15a i rrm , max reverse recovery current (a) 1400 400 200 600 800 1200 30 i f = 30a
?2011 fairchild semiconductor corporation isl9r3060g2, isl9r3060p2 rev. c3 isl9r3060g2, isl9r3060p2 figure 7. reverse recovery softness factor vs di f /dt figure 8. reverse recovery charge vs di f /dt figure 9. junction capacitance vs reverse voltage figure 11. normalized maximum transient thermal impedance typical performance curves (continued) dif/dt, current rate of change (a/ s) 0.5 1.0 1.5 2.0 2.5 v r = 390v, t j = 125c i f = 60a i f = 30a i f = 15a s, reverse recovery softness factor 1000 1600 1400 400 200 600 800 1200 di f /dt, current rate of change (a/ s) 200 400 600 800 1000 1200 v r = 390v, t j = 125c i f = 60a i f = 30a i f = 15a q rr , reverse recovery charge (nc) 1000 1600 1400 400 200 600 800 1200 400 0 800 600 200 1000 v r , reverse voltage (v) c j , junction capacitance (pf) 0.1 1 100 10 t, rectangular pulse duration (s) 10-5 10-2 10-1 z ja , normalized thermal impedance 0.01 10-4 10-3 single pulse 100 0.1 101 duty cycle - descending order 0.5 0.2 0.1 0.05 0.01 0.02 notes: duty factor: d = t 1 /t 2 peak t j = p dm x z ja x r ja + t a p dm t 1 t 2 1.0 figure 10. forward current derating curve 25 50 75 100 125 150 175 0 15 30 45 60 75 90 average forward current, i f(av) (a) case temperature, t o c c ) (
?2011 fairchild semiconductor corporation isl9r3060g2, isl9r3060p2 rev. c4 isl9r3060g2, isl9r3060p2 test circuit and waveforms figure 11. t rr test circuit figure 12. t rr waveforms and definitions figure 13. avalanche energy test circuit figure 14. avalanche current and voltage waveforms r g l vdd mosfet current sense dut v ge t 1 t 2 v ge amplitude and t 1 and t 2 control i f r g control dif/dt + - dt di f i f t rr t a t b 0 i rm 0.25 i rm dut current sense + lr v dd r < 0.1 ? eavl = 1/2li2 [v r(avl) /(v r(avl) - v dd )] q1 = igbt (bv ces > dut v r(avl) ) - v dd q1 i = 1a l = 40mh v dd = 50v iv t0 t1 t2 i l v avl t i l
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trademarks the following includes registered and unregistered trademarks and se rvice marks, owned by fairchild semiconductor and/or its gl obal subsidiaries, and is not intended to be an exhaustive list of all such trademarks. *trademarks of system general corporation, used under license by fairchild semiconductor. disclaimer fairchild semiconductor reserves the right to make changes with out further notice to any products herein to improve reliability, function, or design. fairchild does not assume an y liability arising out of the application or use of any product or circuit described herein; neither does it convey any license under its patent rights, nor the rights of others. these specifications do not expand the terms of fairchild?s wo rldwide terms and conditions, specifically the warranty therein, which covers these products. life support policy fairchild?s products are not authorized for use as critical components in life support devices or systems without the express written approval of fa irchild semiconductor corporation. as used here in: 1. life support devices or systems ar e devices or systems which, (a) are intended for surgical implant into the body or (b) support or sustain life, and (c) whose failure to perform when properly used in accordance with instructions for use provided in the labeling, can be reasonably expected to result in a signi ficant injury of the user. 2. a critical component in any component of a life support, device, or system whose failure to perform c an be reasonably expected to cause the failure of the life support device or system, or to affect its safety or effectiveness. product status definitions definition of terms accupower? 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unifet? vcx? visualmax? xs? tm ? tm tm datasheet identification product status definition advance information formative / in design datasheet contains the design specifications for product de velopment. specifications may change in any manner without notice. preliminary first production datasheet contains preliminary data; supp lementary data will be published at a later date. fairchild semiconductor reserves the ri ght to make changes at any time without notice to improve design. no identification needed full production datasheet contains final specifications. fair child semiconductor reserves the right to make changes at any time without notice to improve the design. obsolete not in production datasheet contains specifications on a product that is discontinued by fairchild semiconductor. the datasheet is for reference information only. rev. i54 isl9r3060g2, isl9r3060p2 ?2011 fairchild semiconductor corporation isl9r3060g2, isl9r3060p2 rev. c4
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