? 1 ? e00x14b1y-ps sony reserves the right to change products and specifications without prior notice. this information does not convey any licens e by any implication or otherwise under any patents or other right. application circuits shown, if any, are typical examples illustr ating the operation of the devices. sony cannot assume responsibility for any problems arising out of the use of these circuits. CXG1106EN 16 pin vson (plastic) high power 2 4 antenna switch mmic with integrated control logic description the CXG1106EN is a high power antenna switch mmic for pdc 800mhz and 1.5ghz handsets. the CXG1106EN is suited to connect tx/rx to one of 4 antennas. the CXG1106EN has on-chip logic circuit for operation with 3 cmos inputs. the sony jfet process is used for low insertion loss and low voltage operation. features ? low insertion loss: 0.25db @900mhz, 0.35db @1.5ghz high linearity: harmonic < ? 65dbc cmos compatible input control small package: 16-pin vson (2.7mm 3.5mm) applications 2 4 antenna switch for digital cellular such as pdc handsets structure gaas j-fet mmic absolute maximum ratings (ta = 25c) bias voltage v dd 7v control voltage v dd 5v operating temperature topr ?35 to +85 c storage temperature tstg ?65 to +150 c gaas mmics are esd sensitive devices. special handling precautions are required. the actual esd test data will be available later.
? 2 ? CXG1106EN rf3 gnd rf2 gnd rf1 gnd1 v dd ctla gnd4 rf4 gnd rf5 gnd rf6 ctlc ctlb f8 f1 f3 f6 f10 f7 f4 f2 f9 f5 1 2 3 4 5 6 7 8 9 10 11 12 13 14 15 16 block diagram/pin configuration truth table f10 h h h h h l f9 h h h h l h f8 h l h l h h f7 l h l h h h f6 l l l l l h f5 l l l l h l f4 h l l h l l f3 l h h l l l f2 h l l h l l f1 l h h l l l ctlc l h l h l h ctlb ? ? l l h h ctla h h l l l l on pass rf3 ? rf2 rf3 ? rf4 rf5 ? rf2 rf5 ? rf4 rf5 ? rf6 rf5 ? rf1
? 3 ? CXG1106EN 1 2 3 4 5 6 7 8 9 10 11 12 13 14 15 16 rf3 gnd gnd gnd1 v dd c rf (100pf) cbypass (100pf) ctla cbypass (100pf) rf2 c rf (100pf) rf1 c rf (100pf) z1 rf4 gnd gnd rctl (1k ? ) rctl (1k ? ) gnd4 ctlc c rf (100pf) cbypass (100pf) cbypass (100pf) ctlb z4 rf5 c rf (100pf) rf6 c rf (100pf) recommended circuit when using this ic, the following external components should be used: rctl: this resistor is used to improve esd performance. 1k ? is recommended. c rf : this capacitor is used for rf decoupling and must be used for all application. 100pf is recommended. cbypass: this capacitor is used for dc line filtering. 100pf is recommended. dc bias condition (ta = 25 c) item v dd vctl (h) vctl (l) min. +2.4 +2.0 0 ty p. +3.0 +3.0 max. +3.6 +3.6 +0.4 unit v v v
? 4 ? CXG1106EN electrical characteristics 1 (ta = 25 c) unit db db db db db db db db db db db db ? dbc dbc dbc dbc dbc dbc dbc dbc dbm dbm s ma a max. 0.50 0.50 0.70 0.80 0.60 0.60 1.6 ? 60 ? 60 ? 60 ? 60 ? 57 ? 57 ? 65 ? 65 0.75 70 ty p . 0.25 0.25 0.45 0.55 0.35 0.35 23 26 28 24 25 33 1.2 ? 75 ? 75 ? 67 ? 67 ? 67 ? 67 ? 75 ? 75 35 35 2 0.45 40 min. 20 23 25 21 22 27 33 33 condition ? 1 ? 1 ? 2 ? 2 ? 2 ? 2 ? 1 ? 1 ? 2 ? 2 ? 2 ? 2 50 ? ? 3 ? 3 ? 3 ? 3 ? 3 ? 3 ? 3 ? 3 v dd = 2.8v v dd = 2.8v v dd = 3.0v vctl (h) = 3v port rf3 ? rf2 rf3 ? rf4 rf5 ? rf2 rf5 ? rf4 rf5 ? rf6 rf5 ? rf1 rf3 ? rf2 rf3 ? rf4 rf5 ? rf2 rf5 ? rf4 rf5 ? rf6 rf5 ? rf1 rf3 ? rf2 rf3 ? rf4 rf3 ? rf2 rf3 ? rf4 rf3 ? rf2 rf3 ? rf4 rf3 ? rf2 rf3 ? rf4 rf3 ? rf2 rf3 ? rf4 symbol il iso. vswr 2fo 3fo 50khz 100khz p1db tsw i dd ictl item insertion loss isolation vswr harmonics acp 1db compression input power switching speed bias current control current ? 1 pin = 29.5dbm, 0/3v control, v dd = 3.0v, 889mhz to 960mhz ? 2 pin = 10dbm, 0/3v control, v dd = 3.0v, 810mhz to 885mhz ? 3 /4-shifted dqpsk, pin = 29.5dbm, 0/3v control, v dd = 3.0v, 889mhz to 960mhz, acp (50khz) < ? 70dbc, acp (100khz) < ? 75dbc, 2nd harmonic < ? 75dbc, 3rd harmonic < ? 75dbc
? 5 ? CXG1106EN electrical characteristics 2 (ta = 25 c) unit db db db db db db db db db db db db ? dbc dbc dbc dbc dbc dbc dbc dbc dbm dbm s ma a max. 0.65 0.60 0.85 1.05 0.65 0.65 1.6 ? 60 ? 60 ? 60 ? 60 ? 57 ? 57 ? 65 ? 65 0.75 70 ty p . 0.40 0.35 0.60 0.80 0.40 0.40 20 24 27 22 21 31 1.2 ? 75 ? 75 ? 67 ? 67 ? 67 ? 67 ? 75 ? 75 35 35 2 0.45 40 min. 17 21 24 19 18 25 33 33 condition ? 1 ? 1 ? 2 ? 2 ? 2 ? 2 ? 1 ? 1 ? 2 ? 2 ? 2 ? 2 50 ? ? 3 ? 3 ? 3 ? 3 ? 3 ? 3 ? 3 ? 3 v dd = 2.8v v dd = 2.8v v dd = 3.0v vctl (h) = 3v port rf3 ? rf2 rf3 ? rf4 rf5 ? rf2 rf5 ? rf4 rf5 ? rf6 rf5 ? rf1 rf3 ? rf2 rf3 ? rf4 rf5 ? rf2 rf5 ? rf4 rf5 ? rf6 rf5 ? rf1 rf3 ? rf2 rf3 ? rf4 rf3 ? rf2 rf3 ? rf4 rf3 ? rf2 rf3 ? rf4 rf3 ? rf2 rf3 ? rf4 rf3 ? rf2 rf3 ? rf4 symbol il iso. vswr 2fo 3fo 50khz 100khz p1db tsw i dd ictl item insertion loss isolation vswr harmonics acp 1db compression input power switching speed bias current control current ? 1 pin = 29.5dbm, 0/3v control, v dd = 3.0v, 1429mhz to 1453mhz ? 2 pin = 10dbm, 0/3v control, v dd = 3.0v, 1477mhz to 1501mhz ? 3 /4-shifted dqpsk, pin = 29.5dbm, 0/3v control, v dd = 3.0v, 1429mhz to 1453mhz, acp (50khz) < ? 70dbc, acp (100khz) < ? 75dbc, 2nd harmonic < ? 75dbc, 3rd harmonic < ? 75dbc
? 6 ? CXG1106EN sony corporation package outline unit: mm 0.05 sony code eiaj code jedec code package material lead treatment lead material package mass epoxy resin solder plating copper alloy package structure terminal section 0.2 0.01 0.23 0.02 0.03 0.03 soldrer plating 0.14 ranges of 0.1mm and 0.25mm from the end of a terminal. note: 1) the dimensions of the terminal section apply to the 16pin vson (plastic) vson-16p-01 0.02 g 0.2 s b a 3.5 2.7 2.5 0.4 b 0.2 s b a 0.05 m s a-b 2x 4x s s 0.9 max 0.6 0.5 0.2 0.13 0.025 + 0.09 ? 0.03 1.4 0.35 0.1 0.35 0.1 0.05 sony code eiaj code jedec code package material lead treatment lead material package mass epoxy resin solder plating copper alloy package structure terminal section 0.2 0.01 0.23 0.02 0.03 0.03 soldrer plating 0.14 ranges of 0.1mm and 0.25mm from the end of a terminal. note: 1) the dimensions of the terminal section apply to the 16pin vson (plastic) vson-16p-01 0.02 g 0.2 s b a 3.5 2.7 2.5 0.4 b 0.2 s b a 0.05 m s a-b 2x 4x s s 0.9 max 0.6 0.5 0.2 0.13 0.025 + 0.09 ? 0.03 1.4 0.35 0.1 0.35 0.1 lead plating specifications item lead material copper alloy solder composition sn-bi bi:1-4wt% plating thickness 5-18m spec. sct ass ? y
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