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| savantic semiconductor product specification silicon npn power transistors 2SC4020 description with to-220c package high breakdown voltage : v c bo =900v(min) wide area of safe operation applications for switching regulator and general purpose applications pinning pin description 1 base 2 collector;connected to mounting base 3 emitter absolute maximum ratings(ta=25 ) symbol parameter conditions value unit v cbo collector-base voltage open emitter 900 v v ceo collector-emitter voltage open base 800 v v ebo emitter-base voltage open collector 7 v i c collector current 3 a i cm collector current-peak 6 a i b base current 1.5 a p c collector power dissipation t c =25 50 w t j junction temperature 150 t stg storage temperature -55~150
savantic semiconductor product specification 2 silicon npn power transistors 2SC4020 characteristics tj=25 unless otherwise specified symbol parameter conditions min typ. max unit v (br)ceo collector-emitter breakdown voltage i c =10ma ; i b =0 800 v v cesat collector-emitter saturation voltage i c =0.7a; i b =0.14a 0.5 v v besat base-emitter saturation voltage i c =0.7a; i b =0.14a 1.2 v i cbo collector cut-off current v cb =800v ;i e =0 100 a i ebo emitter cut-off current v eb =7v; i c =0 100 a h fe dc current gain i c =0.7a ; v ce =4v 10 30 f t transition frequency i e =-0.3a ; v ce =12v 6 mhz c ob output capacitance f=1mhz ; v cb =10v 40 pf switching times t on turn-on time 1.0 s t stg storage time 5.0 s t f fall time v cc =250v; i c =0.7a i b1 =0.1a;i b2 =-0.35a; r l =357 b 1.0 s savantic semiconductor product specification 3 silicon npn power transistors 2SC4020 package outline fig.2 outline dimensions (unindicated tolerance: 0.10 mm) |
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