ses series ultra small esd protector 1 www.goodark.com ultra small esd protector SES3V3N1006-2U rohs description the SES3V3N1006-2U esd protector is designed to replace multilayer varistors (mlvs) in portable applications such as cell phones, notebook computers, and pda s. they feature large cross- sectional area junctions for conducting high transient currents, offer desirable electrical characteristics for board level protection, such as fast response time,lower operating voltage, lower clamping voltage and no device degradationwhen compared to mlvs. the SES3V3N1006-2U protects sensitive semiconductor components from damage or upset due to electrostatic discharge (esd) and other voltage induced transient events. the SES3V3N1006-2U is available in a dfn-2 package with working voltages of 3.3 volt. it gives designer the flexibility to protect one bidirectional line in applications where arrays are not practical. additionally, it may be sprinkled around the board in fapplications w here board space is at a premium. it may be used to meet the esd immunity requirements of iec 61000-4-2, level 4 ( 15kv air, 8kv contact discharge). feature ? 100 watts peak pulse power (tp = 8/20 s) ? transient protection for data lines to iec 61000-4-2 (esd) 15kv (air), 8kv (contact) ? small package for use in portable electronics ? suitable replacement for mlvs in esd protection applications ? protect one i/o or power line ? low clamping voltage ? stand off voltages: 3.3v ? low leakage current ? solid-state silicon-avalanche technology ? small body outline dimensions: 1.0mm 0.6mm 0.5mm ? equivalent to 0402 package a pplications ? cell phone handsets and accessories ? personal digital assistants (pda s) ? notebooks, desktops, and servers ? portable instrumentation ? cordless phones ? digital cameras ? peripherals ? mp3 players
ses series ultra small esd protector 2 www.goodark.com ultra small esd protector SES3V3N1006-2U rohs electrical characteristics @25 (unless otherwise specified) absolute maximum rating @25 typical characteristics parameter symbol conditions min. typ. max. units working voltage v rwm 3.3 v breakdown voltage v br i t =1ma 5.0 v reverse leakage current i r v rwm =3.3v t=25 2.5 a clamping voltage v c i pp =9.8a t p = 8/20 s 10.4 v junction capacitance c j v r =0v f = 1mhz 12 pf rating symbol value units iec 61000-4-2 (esd) contact 30 kv esd voltage per human body model per machine model 16 400 kv v peak pulse power ( t p = 8/20 s ) p pk 100 w maximum peak pulse current ( t p = 8/20 s ) i pp 9.8 a lead soldering temperature t l 260 (10 sec) operating temperature t j -55 to +125 storage temperature t stg -55 to +150 figure1.peak pulse pow er vs pulse time
ses series ultra small esd protector 3 www.goodark.com ultra small esd protector SES3V3N1006-2U rohs figure2. pulse wave form figure3.power derating curve
ses series ultra small esd protector 4 www.goodark.com ultra small esd protector SES3V3N1006-2U rohs product dimension and foot print top view side view bottom view foot print revision history common dimensions (mm) pkg. x1: extreme thin ref. min. nom. max a 0.4 - 0.5 a1 0.00 - 0.05 a3 0.125 ref. d 0.95 1.00 1.05 e 0.55 0.60 0.65 b 0.20 0.25 0.30 l 0.45 0.50 0.55 e 0.65 bsc revision date changes 1.0 2008-7-3 -
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