schottky barrier diode rb481y-90 ? applications ? dimensions (unit : mm) ? land size figure (unit : mm) low current rectification ? features 1) ultra small mold type. (emd4) 2) low v f 3) high reliability ? construction silicon epitaxial planar ? structure ? taping specifications (unit : mm) ? absolute maximum ratings (ta=25c) symbol unit v rm v v r v io ma i fsm a tj c tstg c ? electrical characteristics (ta=25c) symbol min. typ. max. unit forward voltage v f - 0.55 0.61 v i f =100ma i r - 20 100 a v r =90v parameter reverse current conditions storage temperature ? 40 to ? 125 (*1) rating of per diode forward current surge peak (60hz ?1cyc) (*1) 1 junction temperature 125 reverse voltage (dc) 90 average rectified forward current (*1) 100 parameter limits reverse voltage (repetitive peak) 90 emd4 0.5 0.45 1.0 1.55 1.650.1 4.00.1 4.00.1 2.00.05 1.50.1 0 3.50.05 1.750.1 8.00.2 0.80.1 5.50.2 1.650.1 0.650.1 0.30.1 00.1 1pin 1.650.01 1.70.05 rohm : emd4 jeita : sc-75a size dot (year week factory) 0.130.05 0.50.05 00.1 (1) (2) (4) (3) 0.5 0.5 1.00.1 0.220.05 1.60.1 1.20.1 1.60.1 1.60.05 1.60.05 1/3 2011.05 - rev.c data sheet www.rohm.com ? 2011 rohm co., ltd. all rights reserved.
rb481y-90 0 5 10 15 20 25 30 ave:11.7ns ta=25 if=0.5a ir=1a irr=0.25*ir n=10pcs forward voltagevf(mv) vf-if characteristics forward current:if(ma) reverse current:ir(ua) reverse voltagevr(v) vr-ir characteristics capacitance between terminals:ct(pf) reverse voltage:vr(v) vr-ct characteristics vf dispersion map forward voltage:vf(mv) reverse current:ir(ua) ir dispersion map capacitance between terminals:ct(pf) ct dispersion map ifsm disresion map peak surge forward current:ifsm(a) peak surge forward current:ifsm(a) number of cycles ifsm-cycle characteristics peak surge forward current:ifsm(a) time:t(s) ifsm-t characteristics time:t(s) rth-t characteristics transient thaermal impedance:rth (/w) forward power dissipation:pf(w) average rectified forward currentio(a) io-pf characteristics trr dispersion map reverse recovery time:trr(ns) 0.1 1 10 100 0 100 200 300 400 500 600 ta=-25 ta=125 ta=75 ta=25 0.01 0.1 1 10 100 1000 10000 0 102030405060708090 ta=125 ta=75 ta=25 ta=-25 1 10 100 0 5 10 15 20 25 30 530 540 550 560 570 580 ave:552.0mv ta=25 if=0.1a n=30pcs 0 50 100 150 200 250 300 350 400 450 500 ta=25 vr=90v n=30pcs ave:29.31ua 20 21 22 23 24 25 26 27 28 29 30 ave:21.69pf ta=25 f=1mhz vr=0v n=10pcs 0 5 10 15 20 ave:3.70a 8.3ms ifsm 1cyc 0 1 2 3 4 5 6 7 8 9 10 1 10 100 8.3ms ifsm 1cyc 8.3ms 0 1 2 3 4 5 6 7 8 9 10 1 10 100 t ifsm 0 0.1 0.2 0 0.05 0.1 0.15 0.2 0.25 0.3 per diode f=1mhz 10 100 1000 0.001 0.01 0.1 1 10 100 1000 rth(j-a) rth(j-c) 1ms im=10ma if=100ma 300us time mounted on epoxy board dc d=1/2 sin(?180) 2/3 2011.05 - rev.c www.rohm.com ? 2011 rohm co., ltd. all rights reserved. data sheet
rb481y-90 0 0.1 0.2 0.3 0 25 50 75 100 125 per diode reverse power dissipation:p r (w) reverse voltage:vr(v) vr-p r characteristics ambient temperature:ta() derating curve?(io-ta) average rectified forward current:io(a) average rectified forward current:io(a) case temparature:tc() derating curve?(io-tc) 0 0.2 0.4 0.6 0.8 1 0 20406080 per diode 0 0.1 0.2 0.3 0 25 50 75 100 125 per diode d=1/2 sin(?180) dc d=1/2 sin(?180) dc d=1/2 dc sin(?180) t tj=125 d=t/t t vr io vr=45v 0a 0v t tj=125 d=t/t t vr io vr=45v 0a 0v 3/3 2011.05 - rev.c www.rohm.com ? 2011 rohm co., ltd. all rights reserved. data sheet
r 1 120 a ww w .rohm.com ? 20 1 1 rohm co., ltd. all rights reserved. notice rohm customer support system http://ww w . r ohm.com/contact/ thank you for your accessing to rohm p r oduct informations. mo r e detail p r oduct informations and catalogs a r e available, please contact us. notes
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