imbd4148-v document number 85731 rev. 1.5, 12-aug-10 vishay semiconductors www.vishay.com 1 12 3 16923 for technical questions within your re gion, please contact one of the following: diodesamericas@vishay.com , diodesasia@vishay.com , diodeseurope@vishay.com small signal switching diode features ? silicon epitaxial planar diodes ? fast switching diode in case sot-23, especially suited fo r automatic insertion. ? this diodes are also available in other case styles including: the do-35 case with the type designation 1n4148, the minimelf case with the type designation ll4148, and the sod-123 case with the type designation 1n4148w-v. ? aec-q101 qualified ? compliant to rohs directive 2002/95/ec and in accordance to weee 2002/96/ec mechanical data case: sot-23 weight: approx. 8.8 mg packaging codes/options: gs18 / 10 k per 13" reel (8 mm tape), 10 k/box gs08 / 3 k per 7" reel (8 mm tape), 15 k/box parts table absolute maximum ratings t amb = 25 c, unless otherwise specified 1) device on fiberglass substrate, see layout (sot-23). part ordering code marking remarks imbd4148-v imbd4148-v-gs18 or imbd4148-v-gs08 a2 tape and reel parameter test condition symbol value unit reverse voltage v r 75 v peak reverse voltage v rm 100 v rectified current (average) half wave rectification with resist. f 50 hz i f(av) 150 1) ma surge forward current t < 1 s, t j = 25 c i fsm 500 ma power dissipation up to t amb = 25 c p tot 350 1) mw
www.vishay.com 2 document number 85731 rev. 1.5, 12-aug-10 imbd4148-v vishay semiconductors for technical questions within your regi on, please contact one of the following: diodesamericas@vishay.com , diodesasia@vishay.com , diodeseurope@vishay.com thermal characteristics t amb = 25 c, unless otherwise specified 1) device on fiberglass substr ate, see layout (sot-23). electrical characteristics t amb = 25 c, unless otherwise specified layout for r thja test thickness: fiberglass 1.5 mm (0.059 in.) copper leads 0.3 mm (0.012 in.) parameter test condition symbol value unit thermal resistance junction to ambient air r thja 450 1) c/w junction temperature t j 150 c storage temperature range t stg - 65 to + 150 c parameter test condition symbol min. ty p. max. unit forward voltage i f = 10 ma v f 1.0 v leakage current v r = 70 v i r 2.5 a v r = 70 v, t j = 150 c i r 50 a v r = 25 v, t j = 150 c i r 30 a diode capacitance v f = v r = 0 c d 4pf reverse recovery time (see figures) i f = 10 ma, i r = 10 ma, v r = 6 v, r l = 100 t rr 4ns 17451 15 (0.59) 12 (0.47) 0. 8 (0.03) 5 (0.2) 7.5 (0.3) 3 (0.12) 1 (0.4) 1 (0.4) 2 (0. 8 ) 2 (0. 8 ) 1.5 (0.06) 5.1 (0.2)
imbd4148-v document number 85731 rev. 1.5, 12-aug-10 vishay semiconductors www.vishay.com 3 for technical questions within your regi on, please contact one of the following: diodesamericas@vishay.com , diodesasia@vishay.com , diodeseurope@vishay.com typical characteristics t amb = 25 c unless otherwise specified figure 1. forward current vs. forward voltage figure 2. dynamic forward resistance vs. forward current figure 3. admissible power dissi pation vs. ambient temperature 1 8 661 1000 100 10 1 0.1 0.01 i - for w ard c u rrent ( ma ) f 0 0.4 0.6 0. 8 1 1.2 1.4 1.6 1. 8 2 0.2 v f - for w ard v oltage ( v ) = 100 c t j 25 c 1 8 662 1 10 100 1000 10000 r - dynamic for w ard resistance f () 110 0.1 0.01 100 i f - for w ard c u rrent (ma) =25 c t j f=1khz 200 1 8 663 t am b -am b ient t emperat u re ( c) 500 400 300 200 100 20 40 60 8 0 100 120 140 1601 8 0 0 0 p - admissi b le po w er dissipation ( m w ) tot figure 4. relative capacitance vs. reverse voltage figure 5. leakage current vs . junction temperature 1 8 664 246 8 0 1.1 1.0 0.9 0. 8 0.7 10 c - relati v e capacitance (pf) tot v r - re v erse v oltage ( v ) =25 c t j f=1mhz 1 8 665 1 10 100 1000 10000 0204060 8 0 100 120 140 160 1 8 0 200 i - leakage c u rrent ( na ) r t j -j u nction temperat u re ( c) =20 v v r
www.vishay.com 4 document number 85731 rev. 1.5, 12-aug-10 imbd4148-v vishay semiconductors for technical questions within your regi on, please contact one of the following: diodesamericas@vishay.com , diodesasia@vishay.com , diodeseurope@vishay.com package dimensions in millimeters (inches): sot-23 figure 6. admissible repetitive peak forward current vs. pulse duration 10 10 1 -1 100 10 1 0.1 /t t = 1/f =t pp i frm t p t t i =0 0.1 0.2 0.5 10 -5 10 -4 10 -3 10 -2 1 8 666 i - admissi b le repetiti v e frm peak for w ard c u rrent ( a ) t p -p u lse length ( s ) foot print recommendation: rev. 8 - date: 23.sept.2009 17418 document no.: 6.541-5014.01-4 0.9 (0.035) 1 (0.039) 0.9 (0.035) 1 (0.039) 1.43 (0.056) 0.45 (0.018) 0.35 (0.014) 2.8 (0.110) 3.1 (0.122) 0.45 (0.018) 0.35 (0.014) 0.45 (0.018) 0.35 (0.014) 0.1 (0.004) max. 2.35 (0.093) 2.6 (0.102) 0.175 (0.007) 0.098 (0.004) 1.15 (0.045) 0.9 (0.035) 1.20 (0.047) 0.95 (0.037) 0.95 (0.037) 2 (0.079) 0.7 (0.028) 0.9 (0.035) 0 to 8 0.2 (0.008) 0.3 (0.012) 0.5 (0.020) 0.550 ref. (0.022 ref.)
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