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| geometry principal device type cmldm3737 gross die per 6 inch wafer 63,570 process CP357X small signal mosfet transistor n-channel enhancement-mode mosfet chip process details die size 22 x 17 mils die thickness 5.9 mils gate bonding pad area 3.9 x 3.9 mils source bonding pad area 14 x 9 mils top side metalization al-si - 30,000? back side metalization au - 12,000? www.centralsemi.com r0 (17-november 2010)
process CP357X typical electrical characteristics www.centralsemi.com r0 (17-november 2010) |
Price & Availability of CP357X
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