symbol v ds v gs i dm i ar e ar t j , t stg symbol typ ma x 16.7 25 40 50 r jc 1.9 2.5 60 w t c =100c 30 a repetitive avalanche energy l=0.1mh c 36 mj w junction and storage temperature range a p dsm c 2.5 1.6 -55 to 175 t a =70c i d continuous drain current g maximum units parameter t c =25c t c =100c 30 maximum junction-to-ambient a steady-state 10 10 30 avalanche current c 15 power dissipation b t c =25c p d c/w absolute maximum ratings t a =25c unless otherwise noted v v 20 pulsed drain current c power dissipation a t a =25c gate-source voltage drain-source voltage maximum junction-to-case b steady-state c/w thermal characteristics parameter units maximum junction-to-ambient a t 10s r ja c/w AOD420 features v ds (v) = 30v i d = 10a (v gs = 10v) r ds(on) < 28m ? (v gs = 10v) r ds(on) < 42m ? (v gs = 4.5v) the AOD420 uses advanced trench technology to provide excellent r ds(on) and low gate charge. this device is suitable for use as a load switch or in pwm applications. standard product AOD420 is pb-free (meets rohs & sony 259 specifications). AOD420l is a green product ordering option. AOD420 and od420l are electrically identical. g d s g d s t o-252 d - pak t op view drain connected to tab effect transistor n-channel enhancement mode field general description a www.freescale.net.cn 1 / 4
AOD420 symbol min typ max units bv dss 30 v 1 t j =55c 5 i gss 100 na v gs(th) 1 1.8 3 v i d(on) 40 a 21 28 t j =125c 31 40 32.5 42 m ? g fs 15.6 s v sd 0.75 1 v i s 10 a c iss 710 850 pf c oss 120 pf c rss 72 pf r g 1.1 3.6 ? q g (10v) 14.4 18 nc q g (4.5v) 7 8.4 nc q gs 2.6 nc q gd 2.7 nc t d(on) 5.6 ns t r 2.4 ns t d(off) 15.6 ns t f 2.2 ns t rr 13.4 21 ns q rr 4.4 nc this product has been designed and qualified for the consumer market. applications or uses as critical components in life support devices or systems are not authorized. aos does not assume any liability arising out of such applications or uses of its products. aos reserves the right to improve product design, functions and reliability without notice. maximum body-diode continuous current input capacitance output capacitance turn-on delaytime dynamic parameters v gs =10v, v ds =15v, i d =10a total gate charge gate drain charge v gs =0v, v ds =15v, f=1mhz switching parameters turn-on rise time turn-off delaytime v gs =10v, v ds =15v, r l =1.5 ? , r gen =3 ? turn-off fall time total gate charge gate source charge gate resistance v gs =0v, v ds =0v, f=1mhz m ? v gs =4.5v, i d =7a i s =1a,v gs =0v v ds =5v, i d =10a r ds(on) static drain-source on-resistance forward transconductance diode forward voltage i dss a gate threshold voltage v ds =v gs i d =250 a v ds =24v, v gs =0v v ds =0v, v gs = 20v zero gate voltage drain current gate-body leakage current electrical characteristics (t j =25c unless otherwise noted) static parameters parameter conditions body diode reverse recovery time body diode reverse recovery charge i f =10a, di/dt=100a/ s drain-source breakdown voltage on state drain current i d =250 a, v gs =0v v gs =4.5v, v ds =5v v gs =10v, i d =10a reverse transfer capacitance i f =10a, di/dt=100a/ s a: the value of r ja is measured with the device mounted on 1in 2 fr-4 board with 2oz. copper, in a still air environment with t a =25c. the power dissipation p dsm is based on r ja and the maximum allowed junction temperature of 150c. the value in any given application depends on the user's specific board design, and the maximum temperature of 175c may be used if the pcb allows it. b. the power dissipation p d is based on t j(max) =175c, using junction-to-case thermal resistance, and is more useful in setting the upper dissipation limit for cases where additional heatsinking is used. c: repetitive rating, pulse width limited by junction temperature t j(max) =175c. d. the r ja is the sum of the thermal impedence from junction to case r jc and case to ambient. e. the static characteristics in figures 1 to 6 are obtained using <300 s pulses, duty cycle 0.5% max. f. these tests are performed with the device mounted on 1 in 2 fr-4 board with 2oz. copper, in a still air environment with t a =25c. the soa curve provides a single pulse rating. g. the maximum current rating is limited by bond-wires. rev4: august 2005 www.freescale.net.cn 2 / 4
AOD420 typical electrical and thermal characteristics 0 10 20 30 40 50 012345 v ds (volts) fig 1: on-region characteristics i d (a) v gs =3.5 v 4.5 v 4v 3.0 v 10v 5 v 0 4 8 12 16 20 1.5 2 2.5 3 3.5 4 v gs (volts) figure 2: transfer characteristics i d (a) 10 15 20 25 30 35 40 45 50 0 5 10 15 20 i d (a) figure 3: on-resistance vs. drain current and gate voltage r ds(on) (m ? ) 1.0e-05 1.0e-04 1.0e-03 1.0e-02 1.0e-01 1.0e+00 1.0e+01 0.0 0.2 0.4 0.6 0.8 1.0 v sd (volts) figure 6: body-diode characteristics i s (a) 2 5 c 125 0.8 1 1.2 1.4 1.6 1.8 0 25 50 75 100 125 150 175 temperature (c) figure 4: on-resistance vs. junction temperature normalized on-resistance v gs =10 v v gs =4.5 10 20 30 40 50 60 246810 v gs (volts) figure 5: on-resistance vs. gate-source voltage r ds(on) (m ? ) 25c 125c v ds =5v v gs =4.5v v gs =10v i d =10a 25c 125c i d =10a 7v www.freescale.net.cn 3 / 4
AOD420 typical electrical and thermal characteristics 0 2 4 6 8 10 0481216 q g (nc) figure 7: gate-charge characteristics v gs (volts) 0 200 400 600 800 1000 0 5 10 15 20 25 30 v ds (volts) figure 8: capacitance characteristics capacitance (pf) c iss 0 10 20 30 40 50 60 0.001 0.01 0.1 1 10 100 1000 pulse width (s) figure 10: single pulse power rating junction-to-ambient (note f) power (w) 0.001 0.01 0.1 1 10 0.00001 0.0001 0.001 0.01 0.1 1 10 100 1000 pulse width (s) figure 11: normalized maximum transient thermal impedance (note f) z ja normalized transient thermal resistance c oss c rss 0.1 1.0 10.0 100.0 0.1 1 10 100 v ds (volts) i d (amps) figure 9: maximum forward biased safe operating area (note f) 100 s 10ms 1ms 0.1s 1s 10s dc r ds(on) limited t j(max) =150c t a =25c v ds =15v i d =10a single pulse d=t on /t t j,pk =t a +p dm .z ja .r ja r ja =50c/w t on t p d in descending order d=0.5, 0.3, 0.1, 0.05, 0.02, 0.01, single pulse t j(max) =150c t a =25c www.freescale.net.cn 4 / 4
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