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| inchange semiconductor isc product specification isc silicon pnp power transistor 2SB871 description c ollector-emitter breakdown voltage- : v (br)ceo = -20v(min) high speed switching low collector saturation voltage : v ce(sat) = -0.6v(max)@i c = -10a applications designed for low voltage switching applications. absolute maximum ratings(t a =25 ) symbol parameter value unit v cbo collector-base voltage -40 v v ceo collector-emitter voltage -20 v v ebo emitter-base voltage -5 v i c collector current-continuous -10 a i cm collector current-peak -20 a p c collector power dissipation @ t c =25 40 w t j junction temperature 150 t stg storage temperature range -55~150 isc website www.iscsemi.cn
inchange semiconductor isc product specification isc silicon pnp power transistor 2SB871 electrical characteristics t c =25 unless otherwise specified symbol parameter conditions min typ. max unit v (br)ceo collector-emitter breakdown voltage i c = -10ma; i b = 0 -20 v v ce (sat) collector-emitter saturation voltage i c = -10a; i b = -0.33a -0.6 v v be (sat) base-emitter saturation voltage i c = -10a; i b = -0.33a -1.5 v i cbo collector cutoff current v cb = -40v; i e = 0 -50 a i ebo emitter cutoff current v eb = -5v; i c = 0 -50 a h fe-1 dc current gain i c = -0.1a; v ce = -2v 45 h fe-2 dc current gain i c = -3a; v ce = -2v 60 260 c ob collector output capacitance i e = 0; v cb = -10v; f= 1mhz 400 pf f t current-gain?bandwidth product i c = -0.5a; v ce = -10v 100 mhz switching times t on turn-on time 0.1 s t s storage time 0.5 s t f fall time i c = -3a; i b1 = -i b2 = -0.1a 0.1 s ? h fe- 2 classifications r q p 60-120 90-180 130-260 isc website www.iscsemi.cn 2 |
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