--- = --- ec z = an amp company rf mosfet power transistor, 15w, 28v 100 - 500 mhz uf28156 features l n-channel enhancement mode device l dmos structure l lower capacitances for broadband operation l common source configuration l lower -noise floor l 100 mhz to 500 mhz operation absolute maximum ratings at 25c l 3.66 4.32 344 .l70 n .lo 35 jj04 1 do6 v2.00 electrical characteristics at 25c inputcapacitance output capacitance reversecapacitance power gain drain efficiency load mismatch tolerance v,,=28.0 v, f=l .o mhz c cm 15 pf vos=28.0 v, f=l .o mhz c rss 7.2 pf v,,=28.0 v. f=l .o mhz gp 10 - db v,,=28.0 v, 1,,=150.0 ma, p,,$5.0 w, f&o0 mhz ?7d 50 - % v,,=28.0 v, i,,=1 50.0 ma, p,,~l5.0 w, f=500 mhz vswr-t - 2o:l - v,,=28.0 v, 1,,=150.0 ma, p,,,=l5.0 w. f=500 mhz specifications subject to change without notice. m/a-com, inc. north america: tel. (800) 366-2266 n asia/pacific: tel. +81 (03) 3226-1671 m europe: tel. +44 (1344) 869 595 fax (800) 618-8883 fax +81 (03) 3226-1451 fax +44 (1344) 300 020
rf mosfet power transistor, 15w, 28v UF2815B v2.00 typical broadband performance curves capacitances vs voltage f=l .o mhz 16 , i 10 . 5 a- t 2r gain vs frequency v,,r28 v p,,=15 w ldq=loo ma ?i 0 loo 200 300 400 500 frequency (mhz) power output vs voltage p,,=l .o w ido= 50 ma f&o0 mhz 5 10 15 20 2.5 30 ",, (") efficiency vs frequency 70 vdd=28 v i,,=150 ma po,,=15 w i 50 loo 200 300 400 500 frequency (mhz) power output vs power input vo,=28 v ido= 50 ma i 0.08 0.1 0.25 power input(w) specifications subject to change without notice. m/a-com, inc. north america: tel. (800) 366-2266 n asia/pacific: tel. +81 (03) 3226-1671 n europe: tel. +44 (1344) 869 595 fax (800) 618-8883 fax +81 (03) 3226-1451 fax -1-44 (1344) 300 020
rf mosfet power transistor, 15w, 28v UF2815B v2.ocl typical device impedance frequency (mhz) 100 300 500 z,, (ohms) z load (ohms) 6.4 - j 25.0 22.0 + j 16.0 6.5 - j 12.0 15.0 + j 14.0 1.7-j 10.5 8.0 + j 10.5 v,,=28 v, i,,=150 ma, p,,,=15.0 watts z,, is the series equivalent input impedance of the device from gate to source. z, oad is the pptimum series equivalent load impedance as measured from drain to ground. rf test fixture c7 c4 c6 c5. 8 c3 c2 c9 cl cll 12 13, 15 cl0 cl4 rl (11 ll 3 l2 l4 l5 l6 l7 parts list 2.0 pf 3npf 3.6pf 5&f 9.lpf 13pf 270pf 82opf .olsuf muf 5ouf 5ovo 10k ohm lx28158 9 turns df no. 22 awg 20 turns of no. 22 awg .55? of jo ohm transmission line .25? of 50 ohm transmission line l.20? of 50 dhm transmssidn line jo of 50 ohm transmission line specifications subject to change without notice. mia-com, inc. north america: tel. (800) 366-2266 n asia/pacific: tel. +81 (03) 3226-1671 n europe: tel. +44 (1344) 869 595 fax (800) 618-8883 fax +81 (03) 3226-1451 fax +44 (1344) 300 020
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