switching diode features: z four types of packaging are available z high speed. (trr=1.5ns typ.) z suitable for high packing density layout z high reliability. marking: p maximum ratings @t a =25 parameter symbol limits unit peak reverse voltage v rm 80 v dc reverse voltage v r 80 v maximum (peak) forward current i fm 300 ma average forward current i o 100 ma power dissipation p d 200 mw junction temperature t j 150 storage temperature t stg -55-150 electrical characteristics (tamb=25 unless otherwise specified) parameter symbol test conditions min max unit reverse breakdown voltage v (br) i r = 100 a 80 v reverse voltage leakage current i r v r =70v 0.1 a forward voltage v f i f =100ma 1.2 v diode capacitance c d v r =6v, f=1mhz 3.5 pf reverse recovery time t rr v r =6v, i f =5ma 4 ns sot-323 z 2012-1 willas electronic corp. sot-323 plastic-encapsulate diodes DAP202U z
typical characteristics 2012-1 willas electronic corp. sot-323 plastic-encapsulate diodes DAP202U
outline drawing dimensions in inches and (millimeters) sot-323 rev.d .056(1.40) .047(1.20) .096(2.45) .078(2.00) .004(0.10)min. .010(0.25) .003(0.08) .043(1.10) .032(0.80) .016(0.40) .008(0.20) .004(0.10)max. .087(2.20) .070(1.80) .054(1.35) .045(1.15) 2012-1 willas electronic corp. sot-323 plastic-encapsulate diodes DAP202U
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