any changing of specification will not be informed individual c zt5 551 npn transistor epitaxial planar transistor r o h s c o m p l i a n t p r o d u c t h t t p : / / w w w . s e c o s g m b h . c o m e l e k t r o n i s c h e b a u e l e m e n t e t h e c z t 5 551 is designed for general p u r p o s e a p p l i c a t i o n s r e q u i r i n g h i g h b r e a k d o w n v o l t a g e s . e l e c t r i c a l c h a r a c t e r i s t i c s t a m b = 2 5 c u n l e s s o t h e r w i s e s p e c i f i e d p a r a m e t e r s y m b o l t e s t c o n d i t i o n s m i n t y p m a x u n i t c o l l e c t o r - b a s e b r e a k d o w n v o l t a g e v ( b r ) c b o i c = 1 0 0 u a , i e = 0 1 8 0 v c o l l e c t o r - e m i t t e r b r e a k d o w n v o l t a g e v ( b r ) c e o i c = 1 m a , i b = 0 1 6 0 v e m i t t e r - b a s e b r e a k d o w n v o l t a g e v ( b r ) e b o i e = 1 0 u a , i c = 0 6 v c o l l e c t o r c u t - o f f c u r r e n t i c b o v c b = 1 2 0 v , i e = 0 5 0 n a e m i t t e r c u t - o f f c u r r e n t i e b o v e b = 4 v , i c = 0 5 0 n a h f e 1 v c e = 5 v , i c = 1 m a 8 0 4 0 0 d c c u r r e n t g a i n h f e 2 v c e = 5 v , i c = 1 0 m a 8 0 c o l l e c t o r - e m i t t e r s a t u r a t i o n v o l t a g e v c e ( s a t ) i c = 1 0 m a , i b = 1 m a 0 . 1 5 v b a s e - e m i t t e r s a t u r a t i o n v o l t a g e v b e ( s a t ) i c = 1 0 m a , i b = 1 m a v t r a n s i t i o n f r e q u e n c y f t v c e = 1 0 v , i c = 1 0 m a , f = 1 0 0 m h z 1 0 0 m h z _ 1 6 0 1 c o l l e c t o r o u t p u t c a p a c i t a n c e c o b v c b = 1 0 v , f = 1 m h z , i e = 0 p f 6 _ _ _ _ _ _ _ _ _ _ _ _ _ _ _ _ _ _ h f e 3 v c e = 5 v , i c = 5 0 m a 5 0 _ _ _ 3 0 0 1 _ v c e ( s a t ) i c = 5 0 m a , i b = 5 m a 0 . 2 _ 2 _ _ 1 v b e ( s a t ) i c = 5 0 m a , i b = 5 m a 1 _ _ 2 c l a s s i f i c a t i o n o f h f e r a n k a n c r a n g e 8 0 - 2 0 0 1 0 0 - 2 4 0 1 6 0 - 4 0 0 o 6 0 0 6 1 . 5 1 6 0 1 8 0 sot-223 0 1 - j u n - 2 0 0 4 rev. b p a g e 1 o f 2 ref. min. max. ref. min. max. a 6.70 7.30 b 13 c typ. c 2.90 3.10 j 2.30 ref. d 0.02 0.10 1 6.30 6.70 e 0 c 10 c 2 6.30 6.70 i 0.60 0.80 3 3.30 3.70 h 0.25 0.35 4 3.30 3.70 5 1.40 1.80 description 5 5 5 1 d a t e c o d e b c e m a x i m u m r a t i n g s * ( t a m b = 2 5 , u n l e s s o t h e r w i s e s p e c i f i e d ) c o s y m b o l p a r a m e t e r v a l u e c o l l e c t o r c u r r e n t - c o n t i n u o u s i c t s t g t j , j u n c t i o n a n d t o t a l p o w e r d i s s i p a t i o n v e b o p d e m i t t e r - b a s e v o l t a g e v m a w s t o r a g e t e m p e r a t u r e - 5 5 ~ - 1 5 0 c o v c e o c o l l e c t o r - e m i t t e r v o l t a g e v v c b o c o l l e c t o r - b a s e v o l t a g e v u n i t s
c zt5 551 npn transistor epitaxial planar transistor elektronische bauelemente any changing of specification will not be informed individual http://www.secosgmbh.com 01-jun-200 4 rev. b page 2 of 2 c h a r a c t e r i s t i c s c u r v e
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