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| zener diode chips for esd protection WT-Z105P-AU4 1. feature: 2. structure: 3. size: 5. drawing: 2-1 planar type: p/n diode 3-1. * chip size : 5.9 mils x 5.9 mils (150 m x 150 m ). 3-2. chip thickness : 3.3 0.6 mils (85 15 m ). 3-3. bonding pad : 3.54 mils x 3.54 mils (90 m x 90 m) . 3-4. pattern drawing : refer to the attached drawing. *including scribing line. the chip size is(12510) 2 m 2 after dicing. 2-2 electrodes: 1-1 silicon zener diode chips for electrostatic discharge (esd) protection application 1-2 this speci cation applies to p-type silicon zener diode chip device no:WT-Z105P-AU4 top side:gold pad(anode). back side:gold layer(cathode). weitron technology co., ltd. tel:886-2-29148158 fax:886-2-29106796 http://www.weitron.com.tw 03 - jul - 07 top side n - sub p bonding pa d back side parameter s y mbol condition min. t y p. max. unit v r =4 v 100 na reverse leakage current i r v r =5 v 0.5 a zener voltage v z i z =5m a 5.7 - - - - - - - 6.7 v f or w ard vol t age v f i f =20m a 1.2 v 8.0 - electrostatic discharge esd hbm mil-std883 - kv l e d protection z ener 6.protection circuit top view
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