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1. general description the tja1081 is a flexray node transceiver that is fully complia nt with the flexray electrical physical layer spec ification v2.1 rev. a (see ref. 1 ). in addition, it incorporates features and parameters included in v3.0.1 (see ref. 2 and section 14 ). it is primarily intended for communication systems from 1 mbit/s to 10 mbit/s, and provides an advanced interface between the protocol controller and the physical bus in a flexray network. the tja1081 features enhanced low-power modes, optimized for ecus that are permanently connected to the battery. the tja1081 provides differential transmit capability to the network and differential receive capability to the flexra y controller. it offers excelle nt emc performance as well as high esd protection. the tja1081 actively monitors system perf ormance using dedicated error and status information (that can be read by any microcontroller), along with internal voltage and temperature monitoring. the tja1081 supports mode control as used in the tja1080a (see ref. 3 ). 2. features and benefits 2.1 optimized for time trig gered communication systems ? compliant with flexray electrical physical layer specification v2.1 rev. a (see ref. 1 ) ? automotive product qualificatio n in accordance with aec-q100 ? data transfer up to 10 mbit/s ? support of 60 ns minimum bit time ? very low electromagnetic emission (eme) to support unshielded cable ? differential receiver with wide common-mode range for high electromagnetic immunity (emi) ? auto i/o level adaptation to host controller supply voltage v io ? can be used in 14 v and 42 v powered systems ? instant shut-down interface (via bge pin) ? independent power supply ramp-up for v bat , v cc and v io 2.2 low power management ? low power management in cluding inhibit switch ? very low current in sleep and standby modes tja1081 flexray node transceiver rev. 4 ? 24 february 2011 product data sheet
tja1081 all information provided in this document is subject to legal disclaimers. ? nxp b.v. 2011. all rights reserved. product data sheet rev. 4 ? 24 february 2011 2 of 37 nxp semiconductors tja1081 flexray node transceiver ? local and remote wake-up ? supports remote wake-up via dedicated data frames ? wake-up source recognition 2.3 diagnosis (detection and signalling) ? overtemperature detection ? short-circuit on bus lines ? v bat power-on flag (first battery connection and cold start) ? pin txen and pin bge clamping ? undervoltage detection on pins v bat , v cc and v io ? wake source indication 2.4 protection ? bus pins protected against 8 kv hbm esd pulses ? bus pins protected against transients in automotive environment (according to iso 7637 class c) ? bus pins short-circuit proof to battery voltage (14 v and 42 v) and ground ? fail-silent behavior in the event of an undervoltage on pins v bat , v cc or v io ? passive behavior of bus lines while the transceiver is not powered 2.5 functional classes according to flexray electrical physical layer specification (see ref. 1 ) ? bus driver voltage regulator control ? bus driver - bus guardian control interface ? bus driver logic level adaptation 3. ordering information table 1. ordering information type number package name description version TJA1081TS ssop16 ssop16: plastic shrink small outli ne package; 16 leads; body width 5.3 mm sot338-1
tja1081 all information provided in this document is subject to legal disclaimers. ? nxp b.v. 2011. all rights reserved. product data sheet rev. 4 ? 24 february 2011 3 of 37 nxp semiconductors tja1081 flexray node transceiver 4. block diagram fig 1. block diagram v io v bat inh signal router trans- mitter bus failure detection normal receiver input voltage adaptation output voltage adaptation state machine 015aaa066 tja1081 v cc v io bp bm txd rxd rxdint rxdint v bat errn rxen wake-up detection oscillator undervoltage detection wake over- temperature detection low- power receiver txen bge stbn en 316 11 4 6 10 15 1 14 9 12 13 gnd 5 7 8 2
tja1081 all information provided in this document is subject to legal disclaimers. ? nxp b.v. 2011. all rights reserved. product data sheet rev. 4 ? 24 february 2011 4 of 37 nxp semiconductors tja1081 flexray node transceiver 5. pinning information 5.1 pinning 5.2 pin description fig 2. pin configuration tja1081 inh v cc en bp v io bm txd gnd txen wake rxd v bat bge errn stbn rxen 015aaa067 1 2 3 4 5 6 7 8 10 9 12 11 14 13 16 15 table 2. pin description symbol pin type description inh 1 o inhibit output for switch ing external voltage regulator en 2 i enable input; enabled when high; internal pull-down v io 3 p supply voltage for v io voltage level adaptation txd 4 i transmit data input; internal pull-down txen 5 i transmitter enable input; when high transmitter disabled; internal pull-up rxd 6 o receive data output bge 7 i bus guardian enable input; when low transmitter disabled; internal pull-down stbn 8 i standby input; low-power mode when low; internal pull-down rxen 9 o receive data enable output; when low bus activity detected errn 10 o error diagnoses output; when low error detected v bat 11 p battery supply voltage wake 12 i local wake-up input; internal pull-up or pull-down (depends on voltage at pin wake) gnd 13 p ground bm 14 i/o bus line minus bp 15 i/o bus line plus v cc 16 p supply voltage (+5 v)
tja1081 all information provided in this document is subject to legal disclaimers. ? nxp b.v. 2011. all rights reserved. product data sheet rev. 4 ? 24 february 2011 5 of 37 nxp semiconductors tja1081 flexray node transceiver 6. functional description the block diagram of the transceiver is shown in figure 1 . 6.1 operating modes the tja1081 supports the following operating modes: ? normal (normal-power mode) ? receive-only (nor mal-power mode) ? standby (low-power mode) ? go-to-sleep (low-power mode) ? sleep (low-power mode) 6.1.1 bus activity and idle detection the following mechanisms for activity and idle detection are valid in normal-power modes: ? if the absolute differential voltage on the bus lines is higher than | v i(dif)det(act) | for t det(act)(bus) , activity is detected on the bus lines and pin rxen is switched low which results in pin rxd being released: ? if, after bus activity detection, the differentia l voltage on the bus lin es is higher than v ih(dif) , pin rxd will go high ? if, after bus activity detection, the differenti al voltage on the bus lines is lower than v il(dif) , pin rxd will go low ? if the absolute differential voltage on the bus lines is lower than | v i(dif)det(act) | for t det(idle)(bus) , then idle is detected on the bus lines and pin rxen is switched to high. this results in pin rxd bein g blocked (pin rxd is switch ed to high or stays high) 6.2 mode control pins: stbn and en control inputs stbn and en are used to select the operating mode. see ta b l e 3 for a detailed description of pin signalling and figure 3 for the timing diagram. all mode transitions are controlled via the stbn and en pins, unless an undervoltage condition is detected. if v io and (v cc or v bat ) are within their specified operating ranges, pin errn will indicate the status of the error flag. [1] pin errn provides a serial interf ace for retrieving diagnostic information. [2] valid if v io and (v cc or v bat ) are present. table 3. pin signalling mode stbn en errn [1] rxen rxd transmitter inh low high low high low high normal high high error flag set error flag reset bus activity bus idle bus data_0 bus data_1 or idle enabled high receive-only high low disabled go-to-sleep low high error flag set [2] error flag reset wake flag set [2] wake flag reset wake flag set [2] wake flag reset standby low low sleep low x float
tja1081 all information provided in this document is subject to legal disclaimers. ? nxp b.v. 2011. all rights reserved. product data sheet rev. 4 ? 24 february 2011 6 of 37 nxp semiconductors tja1081 flexray node transceiver the state diagram is shown in figure 5 . fig 3. timing diagram in normal mode 001aae43 9 txd bge rxd bm bp rxen txen fig 4. timing diagram of control pins en and stbn 015aaa06 8 s2 t det(en) t det(en) t d(stbn-stb) t d(stbn-rxd) normal receive only standby receive only normal stbn en errn 0.7v io 0.3v io 0.7v io 0.3v io
tja1081 all information provided in this document is subject to legal disclaimers. ? nxp b.v. 2011. all rights reserved. product data sheet rev. 4 ? 24 february 2011 7 of 37 nxp semiconductors tja1081 flexray node transceiver the state transitions are represented with numbers, which correspond with the numbers in column 3 of table 4 to ta b l e 7 . (1) at the first battery connection the transceiver will enter the standby mode. fig 5. state diagram 001aae43 8 normal stbn = high en = high standby (1) stbn = low en = low sleep stbn = low en = x go-to-sleep stbn = low en = high receive only stbn = high en = low 1 4 12, 22 9, 18 11, 21 31, 32 7, 16, 38 3, 30 6, 33 10, 20 2 8, 17, 39 15, 25, 42, 43 5 19 23 26, 44 27, 45 36, 37 13, 34, 35 14, 24, 40, 41 28, 29
xxxxxxxxxxxxxxxxxxxxx xxxxxxxxxxxxxxxxxxxxxxxxxx xxxxxxx x x x xxxxxxxxxxxxxxxxxxxxxxxxxxxxxx xxxxxxxxxxxxxxxxxxx xx xx xxxxx xxxxxxxxxxxxxxxxxxxxxxxxxxx xxxxxxxxxxxxxxxxxxx xxxxxx xxxxxxxxxxxxxxxxxxxxxxxxxxxxxxxxxxx xxxxxxxxxxxx x x xxxxxxxxxxxxxxxxxxxxx xxxxxxxxxxxxxxxxxxxxxxxxxxxxxx xxxxx xxxxxxxxxxxxxxxxxxxxxxxxxxxxxxxxxxxxxxxxxxxxxxxxxx xxxxxxxx xxxxxxxxxxxxxxxxxxxxxxxxx xxxxxxxxxxxxxxxxxxxx xxx tja1081 all information provided in this document is subject to legal disclaimers. ? nxp b.v. 2011. all rights reserved. product data sheet rev. 4 ? 24 february 2011 8 of 37 nxp semiconductors tja1081 flexray node transceiver [1] stbn must be set to low at least t det(en) after the falling edge on en. [2] positive edge on pin stbn sets the wake flag. in the case of a transition to normal mode the wake flag is immediately cleare d. [3] setting the wake flag clears the uv vio , uv vbat and uv vcc flags. [4] hold time of go-to-sleep is less than t h(gotosleep) . [5] hold time of go-to-sleep becomes greater than t h(gotosleep) . table 4. state transitions forced by en and stbn indicates the acti on that initiates a transaction; 1 and 2 indicated the consequences of a transaction. transition from mode direction to mode transition number pin flag note stbn en uv vio uv vbat uv vcc pwon wake normal receive-only 1 h l cleared cleared cleared cleared cleared go-to-sleep 2 l h cleared cleared cleared cleared cleared standby 3 l l cleared cleared cleared cleared cleared [1] receive-only normal 4 h h cleared cleared cleared x x go-to-sleep 5 l h cleared cleared cleared x x standby 6 l l cleared cleared cleared x x standby normal 7 h h cleared cleared 2 cleared x 1 cleared [2] [3] receive-only 8 h l cleared cleared 2 cleared x 1 set [2] [3] go-to-sleep 9 l h cleared cleared x x x go-to-sleep normal 10 h h cleared cleared cleared x 1 cleared [2] [4] receive-only 11 h l cleared cleared cleared x 1 set [2] [4] standby 12 l l cleared cleared x x x [4] sleep 13 l h cleared cleared x x cleared [5] sleep normal 14 hh 2 cleared 2 cleared 2 cleared x 1 cleared [2] [3] receive-only 15 hl 2 cleared 2 cleared 2 cleared x 1 set [2] [3]
xxxxxxxxxxxxxxxxxxxxx xxxxxxxxxxxxxxxxxxxxxxxxxx xxxxxxx x x x xxxxxxxxxxxxxxxxxxxxxxxxxxxxxx xxxxxxxxxxxxxxxxxxx xx xx xxxxx xxxxxxxxxxxxxxxxxxxxxxxxxxx xxxxxxxxxxxxxxxxxxx xxxxxx xxxxxxxxxxxxxxxxxxxxxxxxxxxxxxxxxxx xxxxxxxxxxxx x x xxxxxxxxxxxxxxxxxxxxx xxxxxxxxxxxxxxxxxxxxxxxxxxxxxx xxxxx xxxxxxxxxxxxxxxxxxxxxxxxxxxxxxxxxxxxxxxxxxxxxxxxxx xxxxxxxx xxxxxxxxxxxxxxxxxxxxxxxxx xxxxxxxxxxxxxxxxxxxx xxx tja1081 all information provided in this document is subject to legal disclaimers. ? nxp b.v. 2011. all rights reserved. product data sheet rev. 4 ? 24 february 2011 9 of 37 nxp semiconductors tja1081 flexray node transceiver [1] setting the wake flag clears the uv vio , uv vbat and uv vcc flags. [2] transition via standby mode. table 5. state transitions forced by a wake-up indicates the acti on that initiates a transaction; 1 and 2 indicated the consequences of a transaction. transition from mode direction to mode transition number pin flag note stbn en uv vio uv vbat uv vcc pwon wake standby normal 16 h h cleared cleared 1 cleared x set [1] receive-only 17 h l cleared cleared 1 cleared x set [1] go-to-sleep 18 l h cleared cleared 1 cleared x set [1] standby 19 l l cleared cleared 1 cleared x set [1] go-to-sleep normal 20 h h cleared cleared 1 cleared x set [1] receive-only 21 h l cleared cleared 1 cleared x set [1] standby 22 l l cleared cleared 1 cleared x set [1] go-to-sleep 23 l h cleared cleared 1 cleared x set [1] sleep normal 24 h h 1 cleared 1 cleared 1 cleared x set [1] [2] receive-only 25 h l 1 cleared 1 cleared 1 cleared x set [1] [2] standby 26 l l 1 cleared 1 cleared 1 cleared x set [1] go-to-sleep 27 l h 1 cleared 1 cleared 1 cleared x set [1] [2]
xxxxxxxxxxxxxxxxxxxxx xxxxxxxxxxxxxxxxxxxxxxxxxx xxxxxxx x x x xxxxxxxxxxxxxxxxxxxxxxxxxxxxxx xxxxxxxxxxxxxxxxxxx xx xx xxxxx xxxxxxxxxxxxxxxxxxxxxxxxxxx xxxxxxxxxxxxxxxxxxx xxxxxx xxxxxxxxxxxxxxxxxxxxxxxxxxxxxxxxxxx xxxxxxxxxxxx x x xxxxxxxxxxxxxxxxxxxxx xxxxxxxxxxxxxxxxxxxxxxxxxxxxxx xxxxx xxxxxxxxxxxxxxxxxxxxxxxxxxxxxxxxxxxxxxxxxxxxxxxxxx xxxxxxxx xxxxxxxxxxxxxxxxxxxxxxxxx xxxxxxxxxxxxxxxxxxxx xxx tja1081 all information provided in this document is subject to legal disclaimers. ? nxp b.v. 2011. all rights reserved. product data sheet rev. 4 ? 24 february 2011 10 of 37 nxp semiconductors tja1081 flexray node transceiver [1] uv vio , uv vbat or uv vcc detected clears the wake flag. [2] uv vio overrules uv vcc . [3] uv vbat overrules uv vcc . table 6. state transitions forced by an undervoltage condition indicates the acti on that initiates a transaction; 1 and 2 indicated the consequences of a transaction. transition from mode direction to mode transition number flag note uv vio uv vbat uv vcc pwon wake normal sleep 28 set cleared cleared cleared cleared [1] sleep 29 cleared set cleared cleared cleared [1] standby 30 cleared cleared set cleared cleared [1] receive-only sleep 31 set cleared cleared x 1 cleared [1] sleep 32 cleared set cleared x 1 cleared [1] standby 33 cleared cleared set x 1 cleared [1] go-to-sleep sleep 34 set cleared cleared x 1 cleared [1] sleep 35 cleared set cleared x 1 cleared [1] standby sleep 36 set cleared x x 1 cleared [1] [2] sleep 37 cleared set x x 1 cleared [1] [3]
xxxxxxxxxxxxxxxxxxxxx xxxxxxxxxxxxxxxxxxxxxxxxxx xxxxxxx x x x xxxxxxxxxxxxxxxxxxxxxxxxxxxxxx xxxxxxxxxxxxxxxxxxx xx xx xxxxx xxxxxxxxxxxxxxxxxxxxxxxxxxx xxxxxxxxxxxxxxxxxxx xxxxxx xxxxxxxxxxxxxxxxxxxxxxxxxxxxxxxxxxx xxxxxxxxxxxx x x xxxxxxxxxxxxxxxxxxxxx xxxxxxxxxxxxxxxxxxxxxxxxxxxxxx xxxxx xxxxxxxxxxxxxxxxxxxxxxxxxxxxxxxxxxxxxxxxxxxxxxxxxx xxxxxxxx xxxxxxxxxxxxxxxxxxxxxxxxx xxxxxxxxxxxxxxxxxxxx xxx tja1081 all information provided in this document is subject to legal disclaimers. ? nxp b.v. 2011. all rights reserved. product data sheet rev. 4 ? 24 february 2011 11 of 37 nxp semiconductors tja1081 flexray node transceiver [1] recovery of uv vcc flag. [2] recovery of uv vbat flag. [3] clearing the uv vbat flag sets the wake flag. in the case of a transiti on to normal mode the wake flag is immediately cleared. [4] recovery of uv vio flag. table 7. state transitions forced by an undervoltage recovery indicates the acti on that initiates a transaction; 1 and 2 are the consequences of a transaction. transition from mode direction to mode transition number pin flag note stbn en uv vio uv vbat uv vcc pwon wake standby normal 38 h h cleared cleared cleared x x [1] receive-only 39 h l cleared cleared cleared x x [1] sleep normal 40 h h cleared cleared cleared x 1 cleared [2] [3] normal 41 h h cleared cleared cleared x x [4] receive-only 42 h l cleared cleared cleared x 1 set [2] [3] receive-only 43 h l cleared cleared cleared x x [4] standby 44 l l cleared cleared cleared x 1 set [2] [3] sleep 45 l x cleared cleared cleared x cleared [4] go-to-sleep 46 l h cleared cleared cleared x 1 set [2] [3] sleep 47 l x cleared cleared cleared x cleared [4]
tja1081 all information provided in this document is subject to legal disclaimers. ? nxp b.v. 2011. all rights reserved. product data sheet rev. 4 ? 24 february 2011 12 of 37 nxp semiconductors tja1081 flexray node transceiver 6.2.1 normal mode in normal mode the transceive r is able to transmit and receive data via the bus lines bp and bm. the output of the normal receiver is directly connected to pin rxd. transmitter behavior in normal mode, with no time-out present on pins txen and bge and the temperature flag not set (temp high = 0; see ta b l e 9 ), is detailed in ta b l e 8 . in this mode, pin inh is set high. 6.2.2 receive-only mode in receive-only mode the transceiver can only receive data. the transmitter is disabled, regardless of the voltage levels on pins bge and txen. in this mode, pin inh is set high. 6.2.3 standby mode standby mode is a low-power mode featuring ve ry low current consumption. in this mode, the transceiver cannot transmit or receive dat a. the low-power receiver is activated to monitor the bus for wake-up patterns. a transition to standby mode can be triggered by applying the appropriate levels on pins en and stbn (see figure 5 and table 4 ) or if an undervoltage is detected on pin v cc (see figure 5 and section 6.2.5 ). in this mode, pin inh is set high. if the wake flag is set, pins rxen and rx d are driven low; otherwise pins rxen and rxd are set high (see section 6.3 ). 6.2.4 go-to-sleep mode in this mode, the transceiver be haves as in standby mode. if this mode is selected for a time longer than the go-to-sleep hold time (t h(gotosleep) ) and the wake flag has been previously cleared, the tran sceiver will enter sleep mode, re gardless of the voltage on pin en. 6.2.5 sleep mode sleep mode is a low-power mode. the only difference between sleep mode and standby mode is that pin inh is set floating in sleep mode. a transition to sleep mode will be triggered from all other modes if the uv vio flag or the uv vbat flag is set (see ta b l e 6 ). if an undervoltage is detected on pin v cc or v bat while v io is present, the wake flag is set by a positive edge on pin stbn, provided that v io and (v cc or v bat ) are present. table 8. transmitter function table bge txen txd transmitter l x x transmitter is disabled x h x transmitter is disabled h l h transmitter is enabled; the bus lines are actively driven; bp is driven high and bm is driven low h l l transmitter is enabled; the bus lines are actively driven; bp is driven low and bm is driven high
tja1081 all information provided in this document is subject to legal disclaimers. ? nxp b.v. 2011. all rights reserved. product data sheet rev. 4 ? 24 february 2011 13 of 37 nxp semiconductors tja1081 flexray node transceiver the undervoltage flags will be reset when the wake flag is set, and the transceiver will enter the mode indicated by the levels on pins en and stbn if v io is present. 6.3 wake-up mechanism from sleep mode (pin inh is switched off), the transc eiver will enter standby or go-to-sleep mode (depending on the level at pi n en) if the wake flag is set. consequently, pin inh is switched on. if an undervoltage is not detected on pins v io , v cc and v bat , the transceiver will switch immediately to the mode indicated by the levels on pins en and stbn. in standby, go-to-sleep and sleep modes, pins rxd and rxen are driven low if the wake flag is set. 6.3.1 remote wake-up 6.3.1.1 bus wake-up via wake-up pattern bus wake-up is detected if two c onsecutive data_0 of at least t det(wake)data_0 separated by an idle or data_1 of at least t det(wake)idle , followed by an idle or data_1 of at least t det(wake)idle are present on the bus lines within t det(wake)tot . 6.3.1.2 bus wake-up via dedicated flexray data frame the reception of a dedicated data frame, emulating a valid wake-up pattern, as shown in figure 7 , sets the wake-up flag of the tja1081. due to the byte start sequ ence (bss), preceding each by te, the data_0 and data_1 phases for the wake-up symbol are interrupted every 1 s. for 10 mbit/s the maximum interruption time is 130 ns. such interruptions do not prevent the transceiver from recognizing the wake-up pattern in the payload of a data frame. the wake-up flag will not be set if an invalid wake-up patte rn is received. fig 6. bus wake-up timing 001aae4 42 0 v ? 425 mv v dif t det(wake)tot t det(wake)data_0 t det(wake)idle t det(wake)data_0 t det(wake)idle
tja1081 all information provided in this document is subject to legal disclaimers. ? nxp b.v. 2011. all rights reserved. product data sheet rev. 4 ? 24 february 2011 14 of 37 nxp semiconductors tja1081 flexray node transceiver 6.3.2 local wake-up via pin wake if the voltage on pin wake is lower than v th(det)(wake) for longer than t wake(wake) (falling edge on pin wake) a local wa ke-up event on pin wake is de tected. at the same time, the biasing of this pin is switched to pull-down. if the voltage on pin wake is higher than v th(det)(wake) for longer than t wake(wake) , the biasing of this pin is switched to pull- up, and no local wake -up will be detected. each interruption is 130 ns. the transition time from data_0 to data_1 and from data_1 to data_0 is about 20 ns. the tja1081 wake-up flag will be set with the following pattern: ffh, ffh, ffh, ffh, ffh, 00h, 00h, 00h, 00h, 00h, ffh, ffh, ffh, ffh, ffh, 00h, 00h, 00h, 00h, 00h, ffh, ffh, ffh, ffh, ffh, 00h, 00h, 00h, 00h, 00h, ffh, ffh, ffh, ffh, ffh, ffh fig 7. minimum bus patte rn for bus wake-up 015aaa043 v dif 0 v ? 1500 wake-up +1500 870 ns 870 ns 870 ns 870 ns 770 ns 130 ns 130 ns 130 ns 5 s 5 s 5 s 5 s sleep mode: v io and (v bat or v cc ) still provided. fig 8. local wake-up timing via pin wake 015aaa06 9 v bat v bat rxd and rxen inh 0 v 0 v wake t wake(wake) pull-up pull-up t wake(wake) pull-down
tja1081 all information provided in this document is subject to legal disclaimers. ? nxp b.v. 2011. all rights reserved. product data sheet rev. 4 ? 24 february 2011 15 of 37 nxp semiconductors tja1081 flexray node transceiver 6.4 fail-silent behavior in order to be fail silent, undervoltage detection and a reset mechanism for the digital state machine are implemented. if an undervoltage is detected on pins v cc , v io and/or v bat , the transceiver will enter a low-power mode. this ensures the passive a nd defined behavior of the transmitter and receiver when an undervoltage is detected. in the range between the minimum operatin g voltage and the undervoltage detection threshold, the principle functi ons of the transmitter and receiver are maintained. however, in this range parameters (e.g. thresholds and delays of the transmitter and receiver) may deviate from the levels specified for the operating range. the digital state machine is supplied by v cc , v io or v bat , depending on which voltage is available. therefore, the digital state machine will be pr operly supplied as long as the voltage on pin v cc or pin v io remains above 4.75 v or the voltage on pin v bat remains above 6.5 v. if the voltage on all pins (i.e. v cc , v io and v bat ) breaks down, a reset signal will be given to the digital state machine as soon as the internal supply voltage for the digital state machine becomes too low for the proper operat ion of the state machine. this ensures the passive and defined behavior of the digital state machine in the event of an overall supply voltage breakdown. 6.4.1 v bat undervoltage if the uv vbat flag is set, the transceiver will enter sleep mode (pin inh is switched off) regardless of the voltages present on pins en and stbn. if the undervoltage recovers, the wake flag will be set and the transceiver will enter th e mode determi ned by the voltages on pins en and stbn. 6.4.2 v cc undervoltage if the uv vcc flag is set, the transceiver will enter st andby mode regardle ss of the voltages present on pins en and stbn. if the undervoltag e recovers or the wake flag is set, mode switching via pins en and stbn is possible. 6.4.3 v io undervoltage if the voltage on pin v io is lower than v uvd(vio) (even if the uv vio flag is reset) pins en, stbn, txd and bge are set low (internally) and pin txen is set high (internally). if the uv vio flag is set, the transceive r will enter sleep mode (pin inh is switched off). if the undervoltage recovers or the wake flag is se t, mode switching via pins en and stbn is possible. 6.5 flags 6.5.1 local wake-up source flag the local wake-up source flag can only be set in a low-power mode. when a wake-up event is detected on pin wake (see section 6.3.2 ), the local wake-up source flag is set. the local wake-up source flag is re set by entering a low-power mode.
tja1081 all information provided in this document is subject to legal disclaimers. ? nxp b.v. 2011. all rights reserved. product data sheet rev. 4 ? 24 february 2011 16 of 37 nxp semiconductors tja1081 flexray node transceiver 6.5.2 remote wake-up source flag the remote wake-up source flag can only be set in a low-power mode if pin v bat is within its operating range. when a remote wake-up event is detected on the bus lines (see section 6.3.1 ), the remote wake-up source flag is set. the remote wake-up source flag is reset by entering a low-power mode. 6.5.3 wake flag the wake flag is set if one of the following events occurs: ? the local or remote wake-up source flag is set (edge sensitive) ? a positive edge is detected on pin stbn when v io is present ? recovery of the uv vbat flag the wake flag is reset by entering normal mode, a low-power mode or by setting one of the undervoltage flags. 6.5.4 power-on flag the pwon power-on flag is set if the internal supply voltage for the digital part becomes higher than the lowest value it needs to oper ate. entering normal mode resets the pwon flag. 6.5.5 temperature medium flag the temperature medium flag is set if the junction temperature exceeds t j(warn)(medium) in a normal-power mode while pin v bat is within its operating range. the temperature medium flag is reset when the junction temperature drops below t j(warn)(medium) in a normal-power mode with pin v bat within its operating range or after a read of the status register in a low-power mode while pin v bat is within its operating range. no action will be taken if this flag is set. 6.5.6 temperature high flag the temperature high flag is set if the junction temperature exceeds t j(dis)(high) in a normal-power mode while pin v bat is within its operating range. the temperature high flag is reset if a ne gative edge is applied to pin txen while the junction temperature is lower than t j(dis)(high) in a normal-power mode with pin v bat within its operating range. if the temperature high flag is set, the transmitter will be disabled. 6.5.7 txen_bge clamped flag the txen_bge clamped flag is set if pin txen is low and pin bge is high for longer than t detcl(txen_bge) . the txen_bge clamped flag is reset if pin txen is high or pin bge is low. if the txen_bge flag is set, the transmitter is disabled. 6.5.8 bus error flag the bus error flag is set if pin txen is low and pin bge is high and the data received from the bus lines (pins bp and bm) are different to that received on pin txd. the transmission of any valid communication element, including a wake-up pattern, does not lead to bus error indication.
tja1081 all information provided in this document is subject to legal disclaimers. ? nxp b.v. 2011. all rights reserved. product data sheet rev. 4 ? 24 february 2011 17 of 37 nxp semiconductors tja1081 flexray node transceiver the error flag is reset if the data on the bus lines (pins bp and bm) are the same as on pin txd or if the transmitter is disabled. no action will be taken if the bus erro r flag is set. 6.5.9 uv vbat flag the uv vbat flag is set if the voltage on pin v bat is lower than v uvd(vbat) . the uv vbat flag is reset if the voltage is higher than v uvd(vbat) or by setting the wake flag; see section 6.4.1 . 6.5.10 uv vcc flag the uv vcc flag is set if the voltage on pin v cc is lower than v uvd(vcc) for longer than t det(uv)(vcc) . the flag is reset if the voltage on pin v cc is higher than v uvd(vcc) for longer than t rec(uv)(vcc) or the wake flag is set; see section 6.4.2 . 6.5.11 uv vio flag the uv vio flag is set if the voltage on pin v io is lower than v uvd(vio) for longer than t det(uv)(vio) . the flag is reset if the voltage on pin v io is higher than v uvd(vio) or the wake flag is set; see section 6.4.3 . 6.5.12 error flag the error flag is set if one of the status bits s4 to s10 is set. the error flag is reset if none of the s4 to s10 status bits are set; see table 9 . 6.6 status register the status register can be read out on pin errn by using pin en as cl ock; the status bits are given in ta b l e 9 . the timing diagram is shown in figure 9 . the status register is accessible if: ? uv vio flag is not set and the voltage on pin v io is between 4.75 v and 5.25 v ? uv vcc flag is not set and the voltage on pin v io is between 2.2 v and 4.75 v after reading the status register, if no edge is detected on pin en for longer than t det(en) , the status bits (s4 to s12) will be cleared if the correspond ing flag has been reset. pin errn is low if the corresponding status bit is set. table 9. status bits bit number status bit description s0 local wakeup local wake-up source flag is redirect ed to this bit s1 remote wakeup remote wa ke-up source flag is redirected to this bit s2 - not used; always set s3 pwon status bit set means pwon flag has been set previously s4 bus error status bit set means bus error flag has been set previously s5 temp high status bit set means temperature high flag has been set previously s6 temp medium status bit set means temperature medium flag has been set previously s7 txen_bge clamped status bit set means txen_bge clamped flag has been set previously s8 uvvbat status bit set means uv vbat flag has been set previously s9 uvvcc status bit set means uv vcc flag has been set previously
tja1081 all information provided in this document is subject to legal disclaimers. ? nxp b.v. 2011. all rights reserved. product data sheet rev. 4 ? 24 february 2011 18 of 37 nxp semiconductors tja1081 flexray node transceiver s10 uvvio status bit set means uv vio flag has been set previously s11 - not used; always reset s12 - not used; always reset table 9. status bits ?continued bit number status bit description fig 9. timing diagram for status bits 001aag89 6 s0 s1 s2 t en t det(en) t d(en-errn) receive only normal stbn en errn 0.7v io 0.7v io 0.7v io 0.3v io
tja1081 all information provided in this document is subject to legal disclaimers. ? nxp b.v. 2011. all rights reserved. product data sheet rev. 4 ? 24 february 2011 19 of 37 nxp semiconductors tja1081 flexray node transceiver 7. limiting values [1] according to iso7637, test pulse 1, cl ass c; verified by an external test house. [2] according to iso7637, test pulse 2a, cl ass c; verified by an external test house. [3] according to iso7637, test pulse 3a, cl ass c; verified by an external test house. [4] according to iso7637, test pulse 3b, cl ass c; verified by an external test house. [5] in accordance with iec 60747-1. an alternative definition of t vj is: t vj = t amb + p r th(j-a) , where r th(j-a) is a fixed value to be used for the calculation of t vj . the rating for t vj limits the allowable combinations of pow er dissipation (p) and ambient temperature (t amb ). [6] hbm: c = 100 pf; r = 1.5 k . [7] mm: c = 200 pf; l = 0.75 h; r = 10 . [8] cdm: r = 1 . table 10. limiting values in accordance with the absolute maximum rating syst em (iec 60134). all voltages are referenced to gnd. symbol parameter conditions min max unit v bat battery supply voltage no time limit ? 0.3 +60 v operating range 6.5 60 v v cc supply voltage no time limit ? 0.3 +5.5 v operating range 4.75 5.25 v v io supply voltage on pin v io no time limit ? 0.3 +5.5 v operating range 2.2 5.25 v v inh voltage on pin inh ? 0.3 v bat + 0.3 v i o(inh) output current on pin inh no time limit ? 1- ma v wake voltage on pin wake ? 0.3 v bat + 0.3 v i o(wake) output current on pin wake pin gnd not connected ? 15 - ma v bge voltage on pin bge no time limit ? 0.3 +5.5 v v txen voltage on pin txen no time limit ? 0.3 +5.5 v v txd voltage on pin txd no time limit ? 0.3 +5.5 v v errn voltage on pin errn no time limit ? 0.3 v io + 0.3 v v rxd voltage on pin rxd no time limit ? 0.3 v io + 0.3 v v rxen voltage on pin rxen no time limit ? 0.3 v io + 0.3 v v en voltage on pin en no time limit ? 0.3 +5.5 v v stbn voltage on pin stbn no time limit ? 0.3 +5.5 v v bp voltage on pin bp no time limit ? 60 +60 v v bm voltage on pin bm no time limit ? 60 +60 v v trt transient voltage on pins bm and bp [1] ? 100 - v [2] -75 v [3] ? 150 - v [4] -100 v t stg storage temperature ? 55 +150 c t vj virtual junction temperature [5] ? 40 +150 c v esd electrostatic discharge voltage hbm on pins bp and bm to ground [6] ? 8.0 +8.0 kv hbm at any other pin [6] ? 4.0 +4.0 kv mm on all pins [7] ? 200 +200 v cdm on all pins [8] ? 1000 +1000 v
tja1081 all information provided in this document is subject to legal disclaimers. ? nxp b.v. 2011. all rights reserved. product data sheet rev. 4 ? 24 february 2011 20 of 37 nxp semiconductors tja1081 flexray node transceiver 8. thermal characteristics 9. static characteristics table 11. thermal characteristics symbol parameter conditions typ unit r th(j-a) thermal resistance from junction to ambient in free air 118 k/w table 12. static characteristics all parameters are guaranteed for v bat = 6.5 v to 60 v; v cc = 4.75 v to 5.25 v; v io = 2.2 v to 5.25 v; t vj = ? 40 c to +150 c; r bus = 45 unless otherwise specified. all voltages are defined with respect to ground; positive currents flow into the ic. symbol parameter conditions min typ max unit pin v bat i bat battery supply current low-power modes; no load on pin inh --55 a normal-power modes - - 1 ma v uvd(vbat) undervoltage detection voltage on pin v bat 2.75 - 4.5 v pin v cc i cc supply current low-power modes ? 10 +10 a normal mode; v bge =0v; v txen = v io ; receive-only mode --15ma normal mode; v bge =v io ; v txen = 0 v --37ma normal mode; v bge =v io ; v txen = 0 v; r bus = --15ma v uvd(vcc) undervoltage detection voltage on pin v cc (v bat 5.5 v and v io 4.75 v) or v bat 6.5 v 2.75 3.7 4.5 v pin v io i io supply current on pin v io low-power modes ? 1+1+10 a normal and receive-only modes; v txd = v io - - 1000 a v uvd(vio) undervoltage detection voltage on pin v io 11.52v v uvr(vio) undervoltage recovery voltage on pin v io 11.62.2v v uvhys(vio) undervoltage hysteresis voltage on pin v io v bat > 5.5 v 25 - 200 mv pin en v ih(en) high-level input voltage on pin en 0.7v io -5.5v v il(en) low-level input voltage on pin en ? 0.3 - 0.3v io v i ih(en) high-level input current on pin en v en = 0.7v io 3- 11 a i il(en) low-level input current on pin en v en = 0 v ? 10 +1 a pin stbn v ih(stbn) high-level input voltage on pin stbn 0.7v io -5.5v
tja1081 all information provided in this document is subject to legal disclaimers. ? nxp b.v. 2011. all rights reserved. product data sheet rev. 4 ? 24 february 2011 21 of 37 nxp semiconductors tja1081 flexray node transceiver v il(stbn) low-level input voltage on pin stbn ? 0.3 - 0.3v io v i ih(stbn) high-level input current on pin stbn v stbn = 0.7v io 3- 11 a i il(stbn) low-level input current on pin stbn v stbn = 0 v ? 10 +1 a pin txen v ih(txen) high-level input voltage on pin txen 0.7v io -5.5v v il(txen) low-level input voltage on pin txen ? 0.3 - 0.3v io v i ih(txen) high-level input current on pin txen v txen = v io ? 10 +1 a i il(txen) low-level input current on pin txen v txen = 0.3v io ? 15 - ? 3 a i l(txen) leakage current on pin txen v txen = 5.25 v; v io = 0 v ? 10 +1 a pin bge v ih(bge) high-level input voltage on pin bge 0.7v io -5.5v v il(bge) low-level input voltage on pin bge ? 0.3 - 0.3v io v i ih(bge) high-level input current on pin bge v bge = 0.7v io 3- 11 a i il(bge) low-level input current on pin bge v bge = 0 v ? 10 +1 a pin txd v ih(txd) high-level input voltage on pin txd normal-power modes 0.7v io -v io + 0.3 v v il(txd) low-level input voltage on pin txd normal-power modes ? 0.3 - 0.3v io v i ih(txd) high-level input current on pin txd v txd = v io 70 230 650 a i il(txd) low-level input current on pin txd normal-power modes; v txd =0v ? 50 +5 a low-power modes ? 1 0 +1 a i li(txd) input leakage current on pin txd v txd = 5.25 v; v io = 0 v ? 10 +1 a c i(txd) input capacitance on pin txd not tested; with respect to all other pins at ground; v txd =100 mv; f=5mhz [1] - 5 10 pf pin rxd i oh(rxd) high-level output current on pin rxd v rxd = v io ? 0.4 v; v io =v cc ? 20 - ? 2ma i ol(rxd) low-level output current on pin rxd v rxd = 0.4 v 2 - 20 ma pin errn i oh(errn) high-level output current on pin errn v errn =v io ? 0.4 v; v io =v cc ? 1500 ? 600 ? 100 a i ol(errn) low-level output current on pin errn v errn = 0.4 v 300 700 1500 a pin rxen i oh(rxen) high-level output current on pin rxen v rxen = v io ? 0.4 v; v io =v cc ? 4 ? 1.7 ? 0.5 ma i ol(rxen) low-level output current on pin rxen v rxen = 0.4 v 1 3.2 8 ma table 12. static characteristics ?continued all parameters are guaranteed for v bat = 6.5 v to 60 v; v cc = 4.75 v to 5.25 v; v io = 2.2 v to 5.25 v; t vj = ? 40 c to +150 c; r bus = 45 unless otherwise specified. all voltages are defined with respect to ground; positive currents flow into the ic. symbol parameter conditions min typ max unit
tja1081 all information provided in this document is subject to legal disclaimers. ? nxp b.v. 2011. all rights reserved. product data sheet rev. 4 ? 24 february 2011 22 of 37 nxp semiconductors tja1081 flexray node transceiver pins bp and bm v o(idle)(bp) idle output voltage on pin bp normal or receive-only mode; v txen =v io 0.4v cc 0.5v cc 0.6v cc v standby, go-to-sleep or sleep mode ? 0.1 0 +0.1 v v o(idle)(bm) idle output voltage on pin bm normal or receive-only mode; v txen = v io 0.4v cc 0.5v cc 0.6v cc v standby, go-to-sleep or sleep mode ? 0.1 0 +0.1 v i o(idle)bp idle output current on pin bp ? 60 v v bp +60 v; with respect to gnd and v bat ? 7.5 - +7.5 ma i o(idle)bm idle output current on pin bm ? 60 v v bm +60 v; with respect to gnd and v bat ? 7.5 - +7.5 ma v o(idle)(dif) differential idle output voltage ? 25 0 +25 mv v oh(dif) differential high-level output voltage 40 r bus 55 ; v cc =5 v; c bus = 100 pf 600 850 1500 mv v ol(dif) differential low-level output voltage 40 r bus 55 ; v cc =5v; c bus = 100 pf ? 1500 ? 850 ? 600 mv v ih(dif) differential high-level input voltage normal-power modes; ? 10 v v bp +15 v; ? 10 v v bm +15 v 150 210 300 mv v il(dif) differential low-level input voltage normal-power modes; ? 10 v v bp +15 v; ? 10 v v bm +15 v ? 300 ? 210 ? 150 mv low-power modes; ? 10 v v bp +15 v; ? 10 v v bm +15 v ? 400 ? 210 ? 125 mv | v i(dif)(h-l) | differential input volt. diff. betw. high- and low-levels (abs. value) normal-power modes; (v bp +v bm )/2=2.5v --10% | v i(dif)det(act) | activity detection differential input voltage (absolute value) normal-power modes 150 210 300 mv | i o(sc) | short-circuit output current (absolute value) on pin bp; 0v v bp 60 v --35ma on pin bm; 0v v bm 60 v --35ma on pins bp and bm; v bp =v bm : 0v v bp 60 v; 0v v bm 60 v --35ma r i(bp) input resistance on pin bp idle level; r bus = 10 18.5 40 k r i(bm) input resistance on pin bm idle level; r bus = 10 18.5 40 k r i(dif)(bp-bm) differential input resistance between pin bp and pin bm idle level; r bus = 20 37 80 k i li(bp) input leakage current on pin bp v bp =5v; v bat =v cc =v io =0 v ? 10 0 +10 a table 12. static characteristics ?continued all parameters are guaranteed for v bat = 6.5 v to 60 v; v cc = 4.75 v to 5.25 v; v io = 2.2 v to 5.25 v; t vj = ? 40 c to +150 c; r bus = 45 unless otherwise specified. all voltages are defined with respect to ground; positive currents flow into the ic. symbol parameter conditions min typ max unit
tja1081 all information provided in this document is subject to legal disclaimers. ? nxp b.v. 2011. all rights reserved. product data sheet rev. 4 ? 24 february 2011 23 of 37 nxp semiconductors tja1081 flexray node transceiver [1] these values are based on measurements taken on several samp les (less than 10 pieces). these measurements have taken place i n the laboratory and have been done at t amb = 25 c and t amb = 125 c. no characterization has been done for these parameters. no industrial test will be performed on production products. i li(bm) input leakage current on pin bm v bm =5v; v bat =v cc =v io =0 v ? 10 0 +10 a v cm(bus)(data_0) data_0 bus common-mode voltage r bus = 45 0.4v cc 0.5v cc 0.6v cc v v cm(bus)(data_1) data_1 bus common-mode voltage r bus = 45 0.4v cc 0.5v cc 0.6v cc v v cm(bus) bus common-mode voltage difference r bus = 45 ? 25 0 +25 mv c i(bp) input capacitance on pin bp not tested; with respect to all other pins at ground; v bp = 100 mv; f = 5 mhz [1] - 8 15 pf c i(bm) input capacitance on pin bm not tested; with respect to all other pins at ground; v bm = 100 mv; f = 5 mhz [1] - 8 15 pf c i(dif)(bp-bm) differential input capacitance between pin bp and pin bm not tested; with respect to all other pins at ground; v (bm-bp) =100 mv; f=5mhz [1] -25pf pin inh v oh(inh) high-level output voltage on pin inh i inh = ? 0.2 ma v bat ? 0.8 v bat ? 0.3 v bat ? 0.1 v i l(inh) leakage current on pin inh sleep mode ? 50 +5 a i ol(inh) low-level output current on pin inh v inh = 0 v ? 15 ? 5 ? 1ma pin wake v th(det)(wake) detection threshold voltage on pin wake low-power mode 2.5 - 4.5 v i il(wake) low-level input current on pin wake v wake = 2.4 v for t>t wake(wake) 3- 11 a i ih(wake) high-level input current on pin wake v wake = 4.6 v for t>t wake(wake) ? 11 - ? 3 a temperature protection t j(warn)(medium) medium warning junction temperature v bat > 5.5 v 155 165 175 c t j(dis)(high) high disable junction temperature v bat > 5.5 v 180 190 200 c power-on reset v th(det)por power-on reset detection threshold voltage 3.0 - 3.4 v v th(rec)por power-on reset reco very threshold voltage 3.1 - 3.5 v v hys(por) power-on reset hysteresis voltage 100 - 200 mv table 12. static characteristics ?continued all parameters are guaranteed for v bat = 6.5 v to 60 v; v cc = 4.75 v to 5.25 v; v io = 2.2 v to 5.25 v; t vj = ? 40 c to +150 c; r bus = 45 unless otherwise specified. all voltages are defined with respect to ground; positive currents flow into the ic. symbol parameter conditions min typ max unit
tja1081 all information provided in this document is subject to legal disclaimers. ? nxp b.v. 2011. all rights reserved. product data sheet rev. 4 ? 24 february 2011 24 of 37 nxp semiconductors tja1081 flexray node transceiver 10. dynamic characteristics table 13. dynamic characteristics all parameters are guaranteed for v bat = 6.5 v to 60 v; v cc = 4.75 v to 5.25 v; v io = 2.2 v to 5.25 v; t vj = ? 40 c to +150 c; r bus = 45 unless otherwise specified. all voltages are defined with respect to ground; positive currents flow into the ic. symbol parameter conditions min typ max unit pins bp and bm t d(txd-bus) delay time from txd to bus normal mode [1] data_0 --50ns data_1 --50ns t d(txd-bus) delay time difference from txd to bus normal mode; between data_0 and data_1 [1] --4 ns t d(bus-rxd) delay time from bus to rxd normal mode; c rxd = 15 pf; see figure 11 data_0 --50ns data_1 --50ns t d(bus-rxd) delay time difference from bus to rxd normal mode c rxd = 15 pf; between data_0 and data_1; see figure 11 --5 ns t d(txen-busidle) delay time from txen to bus idle normal mode - 46 80 ns t d(txen-busact) delay time from txen to bus active normal mode - 39 75 ns t d(bge-busidle) delay time from bge to bus idle normal mode - 47 100 ns t d(bge-busact) delay time from bge to bus active normal mode - 40 75 ns t d(bus)(idle-act) bus delay time from idle to active normal mode - 7 30 ns t d(bus)(act-idle) bus delay time from active to idle normal mode - 7 30 ns t r(dif)(bus) bus differential rise time 10 % to 90 %; r bus = 45 ; c bus = 100 pf 51725ns t f(dif)(bus) bus differential fall time 90 % to 10 %; r bus = 45 ; c bus = 100 pf 51725ns wake symbol detection t det(wake)data_0 data_0 wake-up detection time standby or sleep mode; ? 10 v v bp +15 v; ? 10 v v bm +15 v 1- 4 s t det(wake)idle idle wake-up detection time 1 - 4 s t det(wake)tot total wake-up detection time 50 - 115 s undervoltage t det(uv)(vcc) undervoltage detection time on pin v cc 100 - 670 ms t rec(uv)(vcc) undervoltage recovery time on pin v cc 1- 5.2ms t det(uv)(vio) undervoltage detection time on pin v io 100 - 670 ms t det(uv)(vbat) undervoltage detection time on pin v bat --1 ms activity detection t det(act)(bus) activity detection time on bus pins v dif : 0 mv 400 mv 100 - 250 ns t det(idle)(bus) idle detection time on bus pins v dif : 400 mv 0 mv 100 - 245 ns mode control pins t d(stbn-rxd) stbn to rxd delay time stbn high to rxd high; wake flag set --2 s
tja1081 all information provided in this document is subject to legal disclaimers. ? nxp b.v. 2011. all rights reserved. product data sheet rev. 4 ? 24 february 2011 25 of 37 nxp semiconductors tja1081 flexray node transceiver [1] rise and fall time (10 % to 90 %) of t r(txd) and t f(txd) = 5 ns 1 ns. [2] same parameter is guaranteed by design for the transition from normal to go-to-sleep mode. t d(stbn-stb) delay time from stbn to standby mode stbn low to standby mode; receive-only mode [2] --10 s t h(gotosleep) go-to-sleep hold time 20 35 50 s status register t det(en) detection time on pin en for mode control 20 - 80 s t en time period on pin en for reading status bits 4 - 20 s t d(en-errn) delay time from en to errn for reading status bits - - 2 s wake t wake(wake) wake-up time on pin wake low-power modes; falling edge on pin wake; 6.5 v v bat 27 v 528100 s low-power modes; falling edge on pin wake; 27 v < v bat 60 v 25 75 175 s miscellaneous t detcl(txen_bge) txen_bge clamp detection time 2600 - 10400 s table 13. dynamic characteristics ?continued all parameters are guaranteed for v bat = 6.5 v to 60 v; v cc = 4.75 v to 5.25 v; v io = 2.2 v to 5.25 v; t vj = ? 40 c to +150 c; r bus = 45 unless otherwise specified. all voltages are defined with respect to ground; positive currents flow into the ic. symbol parameter conditions min typ max unit
xxxxxxxxxxxxxxxxxxxxx xxxxxxxxxxxxxxxxxxxxxxxxxx xxxxxxx x x x xxxxxxxxxxxxxxxxxxxxxxxxxxxxxx xxxxxxxxxxxxxxxxxxx xx xx xxxxx xxxxxxxxxxxxxxxxxxxxxxxxxxx xxxxxxxxxxxxxxxxxxx xxxxxx xxxxxxxxxxxxxxxxxxxxxxxxxxxxxxxxxxx xxxxxxxxxxxx x x xxxxxxxxxxxxxxxxxxxxx xxxxxxxxxxxxxxxxxxxxxxxxxxxxxx xxxxx xxxxxxxxxxxxxxxxxxxxxxxxxxxxxxxxxxxxxxxxxxxxxxxxxx xxxxxxxx xxxxxxxxxxxxxxxxxxxxxxxxx xxxxxxxxxxxxxxxxxxxx xxx tja1081 all information provided in this document is subject to legal disclaimers. ? nxp b.v. 2011. all rights reserved. product data sheet rev. 4 ? 24 february 2011 26 of 37 nxp semiconductors tja1081 flexray node transceiver fig 10. detailed timing diagram 015aaa14 3 10 % 90 % t d(bus-rxd) t d(bus-rxd) ? 150 mv 0.7v io 0.3v io 0.7v io 0.3v io 0.7v io 0.3v io +300 mv ? 300 mv 0 v bp and bm bge txen txd rxen rxd 0.7v io 0.3v io 0.7v io 0.3v io ? 300 mv ? 150 mv ? 300 mv t r(dif)(bus) t f(dif)(bus) t d(txd-bus) t d(txd-bus) t d(txen-busidle) t d(bge-busidle) t d(txen-busact) t d(bge-busact) t d(bus-rxd) + t det(idle)(bus) t d(bus-rxd) + t det(act)(bus) t d(bus-rxd) + t det(idle)(bus) t d(bus-rxd) + t det(act)(bus)
tja1081 all information provided in this document is subject to legal disclaimers. ? nxp b.v. 2011. all rights reserved. product data sheet rev. 4 ? 24 february 2011 27 of 37 nxp semiconductors tja1081 flexray node transceiver v dif is the receiver test signal. fig 11. receiver test signal 015aaa0 44 22.5 ns 400 v dif (mv) rxd 300 ? 300 ? 400 t d(bus-rxd) 37.5 ns 60 ns 22.5 ns t d(bus-rxd) 22.5 ns 400 v dif (mv) rxd 300 ? 300 ? 400 t d(bus-rxd) 37.5 ns 60 ns 22.5 ns t d(bus-rxd)
tja1081 all information provided in this document is subject to legal disclaimers. ? nxp b.v. 2011. all rights reserved. product data sheet rev. 4 ? 24 february 2011 28 of 37 nxp semiconductors tja1081 flexray node transceiver 11. test information fig 12. test circuit for dynamic characteristics the waveforms of the applied transients are in ac cordance with iso 7637, test pulses 1, 2, 3a and 3b. test conditions: normal mode: bus idle normal mode: bus active; txd at 5 mhz and txen at 1 khz standby mode fig 13. test circuit for automotive transients 015aaa070 15 pf tja1081 10 f +12 v v cc v io v bat r bus c bus bp 15 316 11 14 6 bm rxd +5 v 100 nf 015aaa071 12 v or 42 v 1 nf 1 nf iso 7637 tja1081 10 f v cc v io v bat r bus c bus bp 15 316 11 14 bm +5 v 100 nf g iso 7637 g
tja1081 all information provided in this document is subject to legal disclaimers. ? nxp b.v. 2011. all rights reserved. product data sheet rev. 4 ? 24 february 2011 29 of 37 nxp semiconductors tja1081 flexray node transceiver 12. package outline fig 14. package outline sot338-1 (ssop16) unit a 1 a 2 a 3 b p cd (1) e (1) eh e ll p qz y w v references outline version european projection issue date iec jedec jeita mm 0.21 0.05 1.80 1.65 0.25 0.38 0.25 0.20 0.09 6.4 6.0 5.4 5.2 0.65 1.25 7.9 7.6 1.03 0.63 0.9 0.7 1.00 0.55 8 0 o o 0.13 0.2 0.1 dimensions (mm are the original dimensions) note 1. plastic or metal protrusions of 0.25 mm maximum per side are not included. sot338-1 99-12-27 03-02-19 (1) w m b p d h e e z e c v m a x a y 1 8 16 9 a a 1 a 2 l p q detail x l (a ) 3 mo-150 pin 1 index 0 2.5 5 mm scale s sop16: plastic shrink small outline package; 16 leads; body width 5.3 mm sot338 -1 a max. 2
tja1081 all information provided in this document is subject to legal disclaimers. ? nxp b.v. 2011. all rights reserved. product data sheet rev. 4 ? 24 february 2011 30 of 37 nxp semiconductors tja1081 flexray node transceiver 13. soldering of smd packages this text provides a very brief insight into a complex technology. a more in-depth account of soldering ics can be found in application note an10365 ?surface mount reflow soldering description? . 13.1 introduction to soldering soldering is one of the most common methods through which packages are attached to printed circuit boards (pcbs), to form electr ical circuits. the soldered joint provides both the mechanical and the electrical connection. th ere is no single sold ering method that is ideal for all ic packages. wave soldering is often preferred when through-hole and surface mount devices (smds) are mixed on one printed wiring board; however, it is not suitable for fine pitch smds. reflow soldering is ideal for the small pitches and high densities that come with increased miniaturization. 13.2 wave and reflow soldering wave soldering is a joining technology in which the joints are made by solder coming from a standing wave of liquid solder. the wave soldering process is suitable for the following: ? through-hole components ? leaded or leadless smds, which are glued to the surface of the printed circuit board not all smds can be wave soldered. packages with solder balls, and some leadless packages which have solder lands underneath the body, cannot be wave soldered. also, leaded smds with leads having a pitch smaller than ~0.6 mm cannot be wave soldered, due to an increased pr obability of bridging. the reflow soldering process involves applying solder paste to a board, followed by component placement and exposure to a temperature profile. leaded packages, packages with solder balls, and leadless packages are all reflow solderable. key characteristics in both wave and reflow soldering are: ? board specifications, in cluding the board finish , solder masks and vias ? package footprints, including solder thieves and orientation ? the moisture sensitivit y level of the packages ? package placement ? inspection and repair ? lead-free soldering versus snpb soldering 13.3 wave soldering key characteristics in wave soldering are: ? process issues, such as application of adhe sive and flux, clinching of leads, board transport, the solder wave parameters, and the time during which components are exposed to the wave ? solder bath specifications, including temperature and impurities
tja1081 all information provided in this document is subject to legal disclaimers. ? nxp b.v. 2011. all rights reserved. product data sheet rev. 4 ? 24 february 2011 31 of 37 nxp semiconductors tja1081 flexray node transceiver 13.4 reflow soldering key characteristics in reflow soldering are: ? lead-free versus snpb solderi ng; note that a lead-free reflow process usually leads to higher minimum peak temperatures (see figure 15 ) than a snpb process, thus reducing the process window ? solder paste printing issues including smearing, release, and adjusting the process window for a mix of large and small components on one board ? reflow temperature profile; this profile includ es preheat, reflow (in which the board is heated to the peak temperature) and coolin g down. it is imperative that the peak temperature is high enough for the solder to make reliable solder joints (a solder paste characteristic). in addition, the peak temperature must be low enough that the packages and/or boards are not damaged. the peak temperature of the package depends on package thickness and volume and is classified in accordance with ta b l e 1 4 and 15 moisture sensitivity precautions, as indicat ed on the packing, must be respected at all times. studies have shown that small packages reach higher temperatures during reflow soldering, see figure 15 . table 14. snpb eutectic process (from j-std-020c) package thickness (mm) package reflow temperature ( c) volume (mm 3 ) < 350 350 < 2.5 235 220 2.5 220 220 table 15. lead-free process (from j-std-020c) package thickness (mm) package reflow temperature ( c) volume (mm 3 ) < 350 350 to 2000 > 2000 < 1.6 260 260 260 1.6 to 2.5 260 250 245 > 2.5 250 245 245
tja1081 all information provided in this document is subject to legal disclaimers. ? nxp b.v. 2011. all rights reserved. product data sheet rev. 4 ? 24 february 2011 32 of 37 nxp semiconductors tja1081 flexray node transceiver for further information on temperature profiles, refer to application note an10365 ?surface mount reflow soldering description? . msl: moisture sensitivity level fig 15. temperature profiles for large and small components 001aac84 4 temperature time minimum peak temperature = minimum soldering temperature maximum peak temperature = msl limit, damage level peak temperature
tja1081 all information provided in this document is subject to legal disclaimers. ? nxp b.v. 2011. all rights reserved. product data sheet rev. 4 ? 24 february 2011 33 of 37 nxp semiconductors tja1081 flexray node transceiver 14. appendix 14.1 epl 3.0.1 requirements implemented in the tja1081 table 16. epl 3.0.1 requirements implemented epl 3.0.1 parameter description - wake-up via dedicated data frames r dcload transmitter output voltage defined for dc bus load of 40 to 55 /100 pf dbdtx10, dbdtx01 transmitter delay: 75 ns udata0_lp receiver thresholds for detecting data_0 in low-power modes: ? 400 mv (min)/ ? 100 mv (max) dbdrxai idle reaction time: 50 ns to 275 ns dbdactivitydetection activity detection time 100 ns to 250 ns dbdrxia activity reaction time: 100 ns to 325 ns udata1 ? | udata0 | receiver threshold mismatch: 30 mv dbdrx10, dbdrx01 receiver delay: 75 ns dbusrx0bd, dbusrx1bd minimum bit time: 70 ns c_startxd, c_bdtxd maximum inpu t capacitance on pin txd: 10 pf dbdtxrxai idle loop delay: 325 ns - bd_off mode defined short circuit currents: ibp bmshortmax ,ibm bpshortmax bp shorted to bm: < 60 ma; no time limit ibp gndshortmax ,ibm gndshortmax bp/bm shorted to ground: < 60 ma; no time limit ibp -5shortmax ,ibm -5shortmax bp/bm shorted to ? 5 v: < 60 ma; no time limit ibp bat48shortmax ,ibm bat27shortmax bp/bm shorted to 27 v: < 60 ma; no time limit ibp bat48shortmax ,ibm bat27shortmax bp/bm shorted to 48 v: < 72 ma; no time limit ibp bat60shortmax ,ibm bat60shortmax bp/bm shorted to 60 v: < 90 ma; for 400 ms (max) dbdrv cc v cc undervoltage recovery time: 10 ms (max) uinh1 not_sleep voltage drop from v bat to inh: 1 v @ 200 a and v bat 5.5 v iinh1 leak leakage current, when inh is floating: 10 a - qualification according to aec-q100 temperature classes uesdext 6 kv esd (min) on pins bp and bm according to hbm (100 pf/1500 ) uesdint 2 kv esd (min) on all other pins according to hbm (100 pf/1500 )
tja1081 all information provided in this document is subject to legal disclaimers. ? nxp b.v. 2011. all rights reserved. product data sheet rev. 4 ? 24 february 2011 34 of 37 nxp semiconductors tja1081 flexray node transceiver 15. abbreviations 16. references [1] epl ? flexray communications system electrical physical layer specification version 2.1 rev. a, flexray consortium, dec. 2005 [2] epl ? flexray communications system electrical physical layer specification version 3.0.1, flexray consortium [3] tja1080a ? flexray transceiver data sheet, www.nxp.com 17. revision history table 17. abbreviations abbreviation description bss byte start sequence cdm charged device model ecu electronic control unit emc electromagnetic compatibility eme electromagnetic emission emi electromagnetic immunity esd electrostatic discharge hbm human body model mm machine model tss transmission start sequence table 18. revision history document id release date data sheet status change notice supersedes tja1081 v.4 20110224 product data sheet - tja1081 v.3 modifications: ? section 1 , section 2 , section 16 : text revised ? table 10 , ta b l e 1 2 , table 13 : parameter values/conditions/description/table notes revised ? figure 10 : revised ? figure 13 : figure note revised ? section 14 ? appendix ? : added ? ref. 2 : added ? section 18 ? legal information ? : updated tja1081 v.3 20090904 product data sheet - tja1081 v.2 tja1081 v.2 20090728 product data sheet - tja1081 v.1 tja1081 v.1 20090415 preliminary data sheet - -
tja1081 all information provided in this document is subject to legal disclaimers. ? nxp b.v. 2011. all rights reserved. product data sheet rev. 4 ? 24 february 2011 35 of 37 nxp semiconductors tja1081 flexray node transceiver 18. legal information 18.1 data sheet status [1] please consult the most recently issued document before initiating or completing a design. [2] the term ?short data sheet? is explained in section ?definitions?. [3] the product status of device(s) described in this document may have changed since this document was published and may differ in case of multiple device s. the latest product status information is available on the internet at url http://www.nxp.com . 18.2 definitions draft ? the document is a draft versi on only. the content is still under internal review and subject to formal approval, which may result in modifications or additions. nxp semiconductors does not give any representations or warranties as to the accuracy or completeness of information included herein and shall hav e no liability for the consequences of use of such information. short data sheet ? a short data sheet is an extract from a full data sheet with the same product type number(s) and title. a short data sheet is intended for quick reference only and should not be relied upon to contain detailed and full information. for detailed and full information see the relevant full data sheet, which is available on request vi a the local nxp semiconductors sales office. in case of any inconsistency or conflict with the short data sheet, the full data sheet shall prevail. product specification ? the information and data provided in a product data sheet shall define the specification of the product as agreed between nxp semiconductors and its customer , unless nxp semiconductors and customer have explicitly agreed otherwis e in writing. in no event however, shall an agreement be valid in which the nxp semiconductors product is deemed to offer functions and qualities beyond those described in the product data sheet. 18.3 disclaimers limited warranty and liability ? information in this document is believed to be accurate and reliable. however, nxp semiconductors does not give any representations or warranties, expressed or implied, as to the accuracy or completeness of such information and shall have no liability for the consequences of use of such information. in no event shall nxp semiconductors be liable for any indirect, incidental, punitive, special or consequential damages (including - without limitation - lost profits, lost savings, business interrupt ion, costs related to the removal or replacement of any products or rework charges) whether or not such damages are based on tort (including negligence), warranty, breach of contract or any other legal theory. notwithstanding any damages that customer might incur for any reason whatsoever, nxp semiconductors? aggregate and cumulative liability towards customer for the products described herein shall be limited in accordance with the terms and conditions of commercial sale of nxp semiconductors. right to make changes ? nxp semiconductors reserves the right to make changes to information published in this document, including without limitation specifications and product descriptions, at any time and without notice. this document supersedes and replaces all information supplied prior to the publication hereof. suitability for use in automotive applications ? this nxp semiconductors product has been qua lified for use in automotive applications. the product is not desi gned, authorized or warranted to be suitable for use in medical, military, aircraft, space or life support equipment, nor in applications where failure or malfunction of an nxp semiconductors product can reasonably be ex pected to result in personal injury, death or severe property or environmental dam age. nxp semiconductors accepts no liability for inclusion and/or use of nxp semiconductors products in such equipment or applications and therefore such inclusion and/or use is at the customer?s own risk. applications ? applications that are described herein for any of these products are for illustrative purpos es only. nxp semiconductors makes no representation or warranty that such applications will be suitable for the specified use without further testing or modification. customers are responsible for the design and operation of their applications and products using nxp semiconductors products, and nxp semiconductors accepts no liability for any assistance with applications or customer product design. it is customer?s sole responsibility to determine whether the nxp semiconductors product is suitable and fit for the customer?s applications and products planned, as well as fo r the planned application and use of customer?s third party customer(s). customers should provide appropriate design and operating safeguards to minimize the risks associated with their applications and products. nxp semiconductors does not accept any liability related to any default, damage, costs or problem which is based on any weakness or default in the customer?s applications or products, or the application or use by customer?s third party customer(s). customer is responsible for doing all necessary testing for the customer?s applic ations and products using nxp semiconductors products in order to av oid a default of the applications and the products or of the application or use by customer?s third party customer(s). nxp does not accept any liability in this respect. limiting values ? stress above one or more limiting values (as defined in the absolute maximum ratings system of iec 60134) will cause permanent damage to the device. limiting values are stress ratings only and (proper) operation of the device at these or any other conditions above those given in the recommended operating conditions section (if present) or the characteristics sections of this document is not warranted. constant or repeated exposure to limiting values will permanently and irreversibly affect the quality and reliability of the device. terms and conditions of commercial sale ? nxp semiconductors products are sold subject to the gener al terms and conditions of commercial sale, as published at http://www.nxp.com/profile/terms , unless otherwise agreed in a valid written individual agreement. in case an individual agreement is concluded only the terms and conditions of the respective agreement shall apply. nxp semiconductors hereby expressly objects to applying the customer?s general terms and conditions with regard to the purchase of nxp semiconducto rs products by customer. no offer to sell or license ? nothing in this document may be interpreted or construed as an offer to sell products t hat is open for acceptance or the grant, conveyance or implication of any lic ense under any copyrights, patents or other industrial or intellectual property rights. document status [1] [2] product status [3] definition objective [short] data sheet development this document contains data from the objecti ve specification for product development. preliminary [short] data sheet qualification this document contains data from the preliminary specification. product [short] data sheet production this docu ment contains the product specification.
tja1081 all information provided in this document is subject to legal disclaimers. ? nxp b.v. 2011. all rights reserved. product data sheet rev. 4 ? 24 february 2011 36 of 37 nxp semiconductors tja1081 flexray node transceiver export control ? this document as well as the item(s) described herein may be subject to export control regu lations. export might require a prior authorization from national authorities. 18.4 licenses 18.5 trademarks notice: all referenced brands, produc t names, service names and trademarks are the property of their respective owners. 19. contact information for more information, please visit: http://www.nxp.com for sales office addresses, please send an email to: salesaddresses@nxp.com nxp ics with flexray functionality this nxp product contains functionality that is compliant with the flexray specifications. these specifications and the material co ntained in them, as released by the flexray consortium, are for the purpose of information only. the flexray consortium and the companies that have contributed to the specifications shall not be liable for any use of the specifications. the material contained in these specific ations is protect ed by copyright and other types of intellectual property rights. the commercial exploitation of the material contained in the specifications requires a license to such intellectual property rights. these specifications may be utilized or reproduced without any modification, in any form or by any means, for informational purposes only. for any other purpose, no part of the specifications may be utilized or reproduced, in any form or by any means, without permission in writing from the publisher. the flexray specifications ha ve been developed for automotive applications only. they have neither been developed nor tested for non-automotive applications. the word flexray and the flexray logo are registered trademarks.
nxp semiconductors tja1081 flexray node transceiver ? nxp b.v. 2011. all rights reserved. for more information, please visit: http://www.nxp.com for sales office addresses, please se nd an email to: salesaddresses@nxp.com date of release: 24 february 2011 document identifier: tja1081 please be aware that important notices concerning this document and the product(s) described herein, have been included in section ?legal information?. 20. contents 1 general description . . . . . . . . . . . . . . . . . . . . . . 1 2 features and benefits . . . . . . . . . . . . . . . . . . . . 1 2.1 optimized for time triggered communication systems . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 1 2.2 low power management . . . . . . . . . . . . . . . . . 1 2.3 diagnosis (detection and signalling) . . . . . . . . . 2 2.4 protection . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 2 2.5 functional classes according to flexray electrical physical layer specification (see ref. 1 ). . . . . . . . . . . . . . . . . . . . . . . . . . . . 2 3 ordering information . . . . . . . . . . . . . . . . . . . . . 2 4 block diagram . . . . . . . . . . . . . . . . . . . . . . . . . . 3 5 pinning information . . . . . . . . . . . . . . . . . . . . . . 4 5.1 pinning . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 4 5.2 pin description . . . . . . . . . . . . . . . . . . . . . . . . . 4 6 functional description . . . . . . . . . . . . . . . . . . . 5 6.1 operating modes . . . . . . . . . . . . . . . . . . . . . . . 5 6.1.1 bus activity and idle detection . . . . . . . . . . . . . 5 6.2 mode control pins: stbn and en. . . . . . . . . . . 5 6.2.1 normal mode . . . . . . . . . . . . . . . . . . . . . . . . . 12 6.2.2 receive-only mode . . . . . . . . . . . . . . . . . . . . . 12 6.2.3 standby mode. . . . . . . . . . . . . . . . . . . . . . . . . 12 6.2.4 go-to-sleep mode . . . . . . . . . . . . . . . . . . . . . . 12 6.2.5 sleep mode . . . . . . . . . . . . . . . . . . . . . . . . . . 12 6.3 wake-up mechanism . . . . . . . . . . . . . . . . . . . 13 6.3.1 remote wake-up . . . . . . . . . . . . . . . . . . . . . . 13 6.3.1.1 bus wake-up via wake-up pattern. . . . . . . . . . 13 6.3.1.2 bus wake-up via dedicated flexray data frame. . . . . . . . . . . . . . . . . . . . . . . . . . . . 13 6.3.2 local wake-up via pin wake . . . . . . . . . . . . . 14 6.4 fail-silent behavior . . . . . . . . . . . . . . . . . . . . . 15 6.4.1 v bat undervoltage . . . . . . . . . . . . . . . . . . . . . 15 6.4.2 v cc undervoltage . . . . . . . . . . . . . . . . . . . . . . 15 6.4.3 v io undervoltage. . . . . . . . . . . . . . . . . . . . . . . 15 6.5 flags. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 15 6.5.1 local wake-up source flag . . . . . . . . . . . . . . . 15 6.5.2 remote wake-up source flag . . . . . . . . . . . . . 16 6.5.3 wake flag . . . . . . . . . . . . . . . . . . . . . . . . . . . . 16 6.5.4 power-on flag . . . . . . . . . . . . . . . . . . . . . . . . . 16 6.5.5 temperature medium flag . . . . . . . . . . . . . . . . 16 6.5.6 temperature high flag . . . . . . . . . . . . . . . . . . . 16 6.5.7 txen_bge clamped flag . . . . . . . . . . . . . . . . 16 6.5.8 bus error flag . . . . . . . . . . . . . . . . . . . . . . . . . 16 6.5.9 uv vbat flag . . . . . . . . . . . . . . . . . . . . . . . . . . . 17 6.5.10 uv vcc flag . . . . . . . . . . . . . . . . . . . . . . . . . . . 17 6.5.11 uv vio flag . . . . . . . . . . . . . . . . . . . . . . . . . . . . 17 6.5.12 error flag . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 17 6.6 status register . . . . . . . . . . . . . . . . . . . . . . . . 17 7 limiting values . . . . . . . . . . . . . . . . . . . . . . . . 19 8 thermal characteristics . . . . . . . . . . . . . . . . . 20 9 static characteristics . . . . . . . . . . . . . . . . . . . 20 10 dynamic characteristics. . . . . . . . . . . . . . . . . 24 11 test information . . . . . . . . . . . . . . . . . . . . . . . 28 12 package outline. . . . . . . . . . . . . . . . . . . . . . . . 29 13 soldering of smd packages . . . . . . . . . . . . . . 30 13.1 introduction to soldering. . . . . . . . . . . . . . . . . 30 13.2 wave and reflow soldering. . . . . . . . . . . . . . . 30 13.3 wave soldering . . . . . . . . . . . . . . . . . . . . . . . 30 13.4 reflow soldering . . . . . . . . . . . . . . . . . . . . . . 31 14 appendix . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 33 14.1 epl 3.0.1 requirements implemented in the tja1081. . . . . . . . . . . . . . . . . . . . . . . . 33 15 abbreviations . . . . . . . . . . . . . . . . . . . . . . . . . 34 16 references. . . . . . . . . . . . . . . . . . . . . . . . . . . . 34 17 revision history . . . . . . . . . . . . . . . . . . . . . . . 34 18 legal information . . . . . . . . . . . . . . . . . . . . . . 35 18.1 data sheet status . . . . . . . . . . . . . . . . . . . . . . 35 18.2 definitions . . . . . . . . . . . . . . . . . . . . . . . . . . . 35 18.3 disclaimers . . . . . . . . . . . . . . . . . . . . . . . . . . 35 18.4 licenses. . . . . . . . . . . . . . . . . . . . . . . . . . . . . 36 18.5 trademarks . . . . . . . . . . . . . . . . . . . . . . . . . . 36 19 contact information . . . . . . . . . . . . . . . . . . . . 36 20 contents. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 37

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