STT6602 n-ch: 3.3a, 30v, r ds(on) 65 m ? p-ch: -2.3a, -30v, r ds(on) 120 m ? n & p-channel enhancement mode mos.fet elektronische bauelemente 15-aug-2011 rev. a page 1 of 7 http://www.secosgmbh.com/ any changes of specification will not be informed i ndividually. 6602 top view rohs compliant product a suffix of -c specifies halogen and lead-free description the STT6602 uses advanced trench technology to provide excellent on-resistance and low gate charge . the complementary mosfets form a high-speed power inverter, suitable for a multitude of applica tions. the tsop-6 package is universally used for all commercial-industrial surface mount applications. features low gate change low on-resistance marking package information absolute maximum ratings (t a =25c unless otherwise specified) parameter symbol ratings unit n-channel p-channel drain-source voltage v ds 30 -30 v gate-source voltage v gs 20 20 v continuous drain current 2 t a =25c i d 3.3 -2.3 a t a =70c 2.6 -1.8 pulsed drain current 1 i dm 10 -10 a power dissipation @t a =25c p d 1.14 w linear derating factor 0.01 w / c operating junction and storage temperature range t j , t stg -55~150 c thermal resistance rating maximum junction to ambient 2 r ja 110 c / w notes: 1. pulse width limited by max. junction temperature . 2. surface mounted on 1 in 2 copper pad of fr4 board, t Q 5sec; 180c / w when mounted on min. copper pad. package mpq leader size tsop-6 3k 7 inch date code ref. millimeter ref. millimeter min. max. min. max. a 2.70 3.10 g 0 0.10 b 2.60 3.00 h 0.60 ref. c 1.40 1.80 j 0.12 ref. d 1.10 max. k 0 10 e 1.90 ref. l 0.95 ref. f 0.30 0.50 tsop-6 b l f h c j d g k a e 1 2 3 4 5 6
STT6602 n-ch: 3.3a, 30v, r ds(on) 65 m ? p-ch: -2.3a, -30v, r ds(on) 120 m ? n & p-channel enhancement mode mos.fet elektronische bauelemente 15-aug-2011 rev. a page 2 of 7 http://www.secosgmbh.com/ any changes of specification will not be informed i ndividually. electrical characteristics ( t a =25 c unless otherwise specified ) parameter symbol min. typ. max. unit test conditions static drain-source breakdown voltage n-ch bv dss 30 - - v v gs =0, i d =250 a p-ch -30 - - v gs =0, i d =-250 a gate-threshold voltage n-ch v gs(th) 1 - 2.5 v v ds =v gs , i d =250 a p-ch -1 - -2.5 v ds =v gs , i d = -250 a forward transconductance n-ch g fs - 4 - s v ds =5v, i d =3a p-ch - 2 - v ds = -5v, i d = -2a gate-source leakage current n-ch i gss - - 100 na v gs = 20v p-ch - - 100 v gs = 20v drain-source leakage current n-ch i dss - - 1 ua v ds =30 v, v gs =0 p-ch - - -1 v ds = -30 v, v gs =0 n-ch - - 25 v ds =24v, v gs =0 p-ch - - -25 v ds = -24v, v gs =0 drain-source on-resistance 1 n-ch r ds(on) - - 65 m v gs =10v, i d =3a p-ch - - 120 v gs = -10v, i d = -2a n-ch - - 90 v gs =4.5v, i d =2a p-ch - - 170 v gs = -4.5v, i d = -1a total gate charge 1 n-ch q g - 3.1 - nc n-channel v ds =25v, v gs = 4.5v, i d = 3a p-channel v ds = -25v, v gs = -4.5v, i d = -2.0a p-ch - 3 - gate-source charge n-ch q gs - 1.2 - p-ch - 0.78 - gate-drain charge n-ch q gd - 1.6 - p-ch - 1.6 - turn-on delay time 1 n-ch t d(on) - 3.3 - ns n-channel v ds = 15v, r g = 3.3 ,r d =15 v gs = 10v, i d = 1a p-channel v ds = -15v, r g = 3.3 ,r d =15 v gs =-5v, i d = -1a p-ch - 7 - rise time n-ch t r - 2.5 - p-ch - 6 - turn-off delay time n-ch t d(off) - 13.2 - p-ch - 15 - fall time n-ch t f - 1.7 - p-ch - 7.5 - input capacitance n-ch c iss - 200 - pf n-channel v gs =0, v ds =25v, f=1.0mhz p-channel v gs =0, v ds =-25v, f=1.0mhz p-ch - 260 - output capacitance n-ch c oss - 40 - p-ch - 55 - reverse transfer capacitance n-ch c rss - 20 - p-ch - 44 - gate resistance n-ch r g - 2.3 3.0 f=1.0mhz p-ch - 4.3 5 notes: 1. pulse test
STT6602 n-ch: 3.3a, 30v, r ds(on) 65 m ? p-ch: -2.3a, -30v, r ds(on) 120 m ? n & p-channel enhancement mode mos.fet elektronische bauelemente 15-aug-2011 rev. a page 3 of 7 http://www.secosgmbh.com/ any changes of specification will not be informed i ndividually. electrical characteristics ( t a =25 c unless otherwise specified ) parameter symbol min. typ. max. unit test conditions source-drain diode forward on voltage 1 n-ch v sd - - 1.2 v i s =0.9a, v gs =0 p-ch - - -1.2 i s = -0.9a, v gs =0 reverse recovery time n-ch t rr - 14 - ns i s =3a, v gs =0 ,di/dt=100a/ s p-ch - 15 - i s = -2a, v gs =0 ,di/dt=100a/ s reverse recovery charge n-ch q rr - 7 - nc i s =3a, v gs =0 ,di/dt=100a/ s p-ch - 7 - i s = -2a, v gs =0 ,di/dt=100a/ s notes: 1. pulse test
STT6602 n-ch: 3.3a, 30v, r ds(on) 65 m ? p-ch: -2.3a, -30v, r ds(on) 120 m ? n & p-channel enhancement mode mos.fet elektronische bauelemente 15-aug-2011 rev. a page 4 of 7 http://www.secosgmbh.com/ any changes of specification will not be informed i ndividually. characteristic curves (n-channel)
STT6602 n-ch: 3.3a, 30v, r ds(on) 65 m ? p-ch: -2.3a, -30v, r ds(on) 120 m ? n & p-channel enhancement mode mos.fet elektronische bauelemente 15-aug-2011 rev. a page 5 of 7 http://www.secosgmbh.com/ any changes of specification will not be informed i ndividually. characteristic curves (n-channel)
STT6602 n-ch: 3.3a, 30v, r ds(on) 65 m ? p-ch: -2.3a, -30v, r ds(on) 120 m ? n & p-channel enhancement mode mos.fet elektronische bauelemente 15-aug-2011 rev. a page 6 of 7 http://www.secosgmbh.com/ any changes of specification will not be informed i ndividually. characteristic curves (p-channel)
STT6602 n-ch: 3.3a, 30v, r ds(on) 65 m ? p-ch: -2.3a, -30v, r ds(on) 120 m ? n & p-channel enhancement mode mos.fet elektronische bauelemente 15-aug-2011 rev. a page 7 of 7 http://www.secosgmbh.com/ any changes of specification will not be informed i ndividually. characteristic curves (p-channel)
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