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| inchange semiconductor product specification silicon npn power transistors BUL45 description ? with to-220c package ? fast switching speed ? high voltage applications ? designed for use in electronic ballast and in switchmode power supplies pinning pin description 1 base 2 collector;connected to mounting base 3 emitter absolute maximum ratings (ta=25 ?? ) symbol parameter conditions value unit v cbo collector-base voltage open emitter 700 v v ceo collector-emitter voltage open base 400 v v ebo emitter-base voltage open collector 9 v i c collector current 5 a i cm collector current (peak) 10 a i b base current 2 a p tot total power dissipation t c =25 ?? 75 w t j max.operating junction temperature 150 ?? t stg storage temperature -65~150 ?? thermal characteristics symbol parameter max unit r th j-case thermal resistance junction case 1.65 ??/w
inchange semiconductor product specification 2 silicon npn power transistors BUL45 characteristics tj=25 ?? unless otherwise specified symbol parameter conditions min typ. max unit v ceo(sus) collector-emitter sustaining voltage i c =0.1 a ;i b =0;l=25mh 400 v v cesat-1 collector-emitter saturation voltage i c =1a ;i b =0.2 a 0.175 0.25 v v cesat-2 collector-emitter saturation voltage i c =2a ;i b =0.4 a 0.25 0.4 v v besat-1 base-emitter saturation voltage i c =1a ;i b =0.2 a 0.84 1.2 v v besat-2 base-emitter saturation voltage i c =2a ;i b =0.4 a 0.89 1.25 v i ceo collector cut-off current v ce =ratedv ceo; i b =0; 100 | a i ces collector cut-off current v ce =ratedv ces; v eb =0; t c =125 ?? 10 100 | a i ebo emitter cut-off current v eb =9v; i c =0 0.1 ma h fe-1 dc current gain i c =0.3a;v ce =5v 14 34 h fe-2 dc current gain i c =2a;v ce =1v 7 14 h fe-3 dc current gain i c =10ma;v ce =5v 10 22 c ob output capacitance i e =0; v cb =10v;f=1mhz 50 75 pf f t transition frequency i c =0.5 a ; v ce =10v 12 mhz inchange semiconductor product specification 3 silicon npn power transistors BUL45 package outline fig.2 outline dimensions (unindicated tolerance: 0.1mm) |
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