TLP4007G 2003-01-14 1 toshiba photocoupler photorelay TLP4007G telecommunication measurement equipment security equipment fa the toshiba TLP4007G consists of an aluminum gallium arsenide infrared emitting diode optically coupled to a photo-mosfet and is the 1-form-a/b photorelay with 350-v withstanding voltage. normally closed (1-form-b) device, normally opened (1-form-a) device peak off-state voltage: 350 v (min) trigger led current: 3 ma (max) on-state current: 100 ma (max) on-state resistance: 50 ? (max) isolation voltage: 2500 vrms (min) pin configuration (top view) unit: mm jedec D jeita D toshiba 11-10c4 weight: 0.54 g (typ.) 1 2 8 7 1: anode (1b) 2: cathode (1b) 3: anode (1a) 4: cathode (1a) 5: drain d1 (1a) 6: drain d2 (1a) 7: drain d3 (1b) 8: drain d4 (1b) 6 5 3 4
TLP4007G 2003-01-14 2 maximum ratings (ta 25c) characteristics symbol rating unit forward current i f 50 ma forward current derating (ta 25c) i f /c 0.5 ma/c peak forward current i fp 1 a reverse voltage v r 5 v led junction temperature t j 125 c off-state output terminal voltage v off 350 v one channel operation on-state current two channel operations (1a1b simultaneous operation) i on 100 ma one channel operation on-state current derating (ta 25c) two channel operations (1a1b simultaneous operation) i on /c 1.0 ma/c detector junction temperature t j 125 c storage temperature range t stg 55 to 125 c operating temperature range t opr 40 to 85 c lead soldering temperature (10 s) t sol 260 c isolation voltage (ac, 1 min, r.h. 60%) (note 1) bv s 2500 vrms note 1: pins 1, 2, 3 and 4 are shorted together, and pins 5, 6, 7 and 8 are shorted together. recommended operating conditions characteristics symbol min typ. max unit supply voltage v dd 280 v forward current i f 5 10 25 ma on-state current i on 100 ma operating temperature t opr 20 65 c electrical characteristics (ta 25c) characteristics symbol test condition min typ. max unit forward voltage v f i f 10 ma 1.0 1.15 1.3 v reverse current i r v r 5 v 10 a led capacitance c t v 0, f 1 mhz 30 pf off-state current i off v off 350 v 1 a capacitance (1b) v 0, f 1 mhz, i f 5 ma 30 detector capacitance (1a) c off v 0, f 1 mhz 30 pf
TLP4007G 2003-01-14 3 coupled electrical characteristics (ta 25c) characteristics form symbol test condition min typ. max unit 1a i ft i on 100 ma trigger led current 1b i fc i off 10 a 1 3 ma 1a i fc i off 10 a return led current 1b i ft i on 100 ma 0.1 ma i on 100 ma, t 1s 30 35 on-state resistance (note 2) r on i on 100 ma 40 50 note 2: 1-form-a: i f 5 ma, 1-form-b: i f 0 ma isolation characteristics (ta 25c) characteristics symbol test condition min typ. max unit capacitance input to output c s v s 0, f 1 mhz 0.8 pf isolation resistance r s v s 500 v, r.h. 60% 5
10 10 10 14 ac, 1 min 2500 ac, 1 s, in oil 5000 vrms isolation voltage bv s dc, 1 min, in oil 5000 vdc switching characteristics (ta 25c) characteristics symbol test condition min typ. max unit turn-on time t on 0.25 1 1b turn-off time t off r l 200 v dd 20 v, i f 5 ma (note 3) 0.5 1 ms turn-on time t on 0.3 1 1a turn-off time t off r l 200 v dd 20 v, i f 5 ma (note 3) 0.15 1 ms note 3: switching time test circuit 8 t off t on 10% 90% v out i f 1 v dd v out r l 7 2 i f 1b 6 t off t on 10% 90% v out i f 3 v dd v out r l 5 4 i f 1a
TLP4007G 2003-01-14 4 characteristics curves for 1-form-a/b 0 20 60 20 40 80 100 120 100 80 60 40 20 0 ta 25c 0.6 0.8 1 1.2 1.6 1.8 1.4 100 30 10 3 1 0.3 0.1 ambient temperature ta (c) i f ? ta allowable forward current i f (ma) ambient temperature ta (c) i on ? ta allowable on-state current i on (ma) forward voltage v f (v) i f ? v f forward current i f (ma) 0 20 160 120 100 80 60 40 20 0 120 80 40
TLP4007G 2003-01-14 5 characteristics curves for 1-form-b ambient temperature ta (c) r on ? ta on-state resistance r on ( ) ambient temperature ta (c) i off ? ta off-state current i off (na) ambient temperature ta (c) i fc ? ta trigger led current i fc (ma) 10 40 3000 100 80 60 40 20 0 20 300 100 30 1000 t on t off v dd 20 v, r l 200 i f 5 ma 1 100 ta 25c v dd 20 v, r l 200 t on t off 30 50 10 3 5 300 10 3000 300 100 30 1000 ta 25c 4 1 0 4 1 150 150 50 0 100 50 100 2 3 2 3 i on 100 ma t 1 s 0 40 5 100 80 60 40 20 0 20 4 3 2 1 i on ? v on on-state current i on (ma) on-state voltage v on (v) switching time t on , t off ( s) input current i f (ma) t on , t off ? i f ambient temperature ta (c) t on , t off ? ta switching time t on , t off ( s) i on 100 ma t 1 s 40 0 20 0 20 40 80 100 60 20 30 50 40 10 1 0 20 40 60 80 100 10 100 1000 3 30 300 v off 350 v i f 5 ma
TLP4007G 2003-01-14 6 characteristics curves for 1-form-a switching time t on , t off ( s) on-state current i on (ma) ambient temperature ta (c) r on ? ta on-state resistance r on ( ) ambient temperature ta (c) i ft ? ta trigger led current i fc (ma) ambient temperature ta (c) i off ? ta off-state current i off (na) on-state voltage v on (v) i on ? v on input current i f (ma) t on , t off ? i f ambient temperature ta (c) t on , t off ? ta switching time t on , t off ( s) i on 100 ma t 1 s 0 40 5 100 80 60 40 20 0 20 4 3 2 1 0 20 i on 100 ma i f 5 ma t 1 s 40 80 60 40 20 0 100 30 20 10 50 v off 350 v 40 100 20 0 20 60 100 40 80 30 10 3 1 4 1 0 4 1 150 150 50 0 100 50 100 2 3 2 3 ta 25c i f 5 ma 10 40 2000 100 80 60 40 20 0 20 300 100 30 1000 v dd 20 v, r l 200 i f 5 ma t off t on 10 1 1000 100 30 10 3 300 100 30 ta 25c v dd 20 v, r l 200 2000 t off t on
TLP4007G 2003-01-14 7 toshiba is continually working to improve the quality and reliability of its products. nevertheless, semiconductor devices in general can malfunction or fail due to their inherent electrical sensitivity and vulnerability to physical stress. it is the responsibility of the buyer, when utilizing toshiba products, to comply with the standards of safety in making a safe design for the entire system, and to avoid situations in which a malfunction or failure of such toshiba products could cause loss of human life, bodily injury or damage to property. in developing your designs, please ensure that toshiba products are used within specified operating ranges as set forth in the most recent toshiba products specifications. also, please keep in mind the precautions and conditions set forth in the ?handling guide for semiconductor devices,? or ?toshiba semiconductor reliability handbook? etc.. the toshiba products listed in this document are intended for usage in general electronics applications (computer, personal equipment, office equipment, measuring equipment, industrial robotics, domestic appliances, etc.). these toshiba products are neither intended nor warranted for usage in equipment that requires extraordinarily high quality and/or reliability or a malfunction or failure of which may cause loss of human life or bodily injury (?unintended usage?). unintended usage include atomic energy control instruments, airplane or spaceship instruments, transportation instruments, traffic signal instruments, combustion control instruments, medical instruments, all types of safety devices, etc.. unintended usage of toshiba products listed in this document shall be made at the customer?s own risk. gallium (gaas) arsenide is a substance used in the products described in this document. gaas dust or vapor is harmful to the human body. do not break, cut, crushu or dissolve chemically. the products described in this document are subject to the foreign exchange and foreign trade laws. the information contained herein is presented only as a guide for the applications of our products. no responsibility is assumed by toshiba corporation for any infringements of intellectual property or other rights of the third parties which may result from its use. no license is granted by implication or otherwise under any intellectual property or other rights of toshiba corporation or others. the information contained herein is subject to change without notice. 020704ebc restrictions on product use
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