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04/26/04 IRG4PH50UDPBF insulated gate bipolar transistor with ultrafast soft recovery diode features e g n-channel c v ces = 1200v v ce(on) typ. = 2.78v @v ge = 15v, i c = 24a ultrafast copack igbt ? ultrafast: optimized for high operating frequencies up to 40 khz in hard switching, >200 khz in resonant mode ? new igbt design provides tighter parameter distribution and higher efficiency than previous generations ? igbt co-packaged with hexfred tm ultrafast, ultra-soft-recovery anti-parallel diodes for use in bridge configurations ? industry standard to-247ac package benefits ? higher switching frequency capability than competitive igbts ? highest efficiency available ? hexfred diodes optimized for performance with igbt's . minimized recovery characteristics require less/no snubbing to-247ac parameter max. units v ces collector-to-emitter breakdown voltage 1200 v i c @ t c = 25c continuous collector current 45 i c @ t c = 100c continuous collector current 24 a i cm pulsed collector current 180 i lm clamped inductive load current 180 i f @ t c = 100c diode continuous forward current 16 i fm diode maximum forward current 180 v ge gate-to-emitter voltage 20 v p d @ t c = 25c maximum power dissipation 200 p d @ t c = 100c maximum power dissipation 78 t j operating junction and -55 to + 150 t stg storage temperature range soldering temperature, for 10 seconds 300 (0.063 in. (1.6mm) from case ) c mounting torque, 6-32 or m3 screw. 10 lbf?in (1.1n?m) absolute maximum ratings w parameter min. typ. max. units r jc junction-to-case - igbt ??? ??? 0.64 r jc junction-to-case - diode ??? ??? 0.83 c/w r cs case-to-sink, flat, greased surface ??? 0.24 ??? r ja junction-to-ambient, typical socket mount ??? ??? 40 wt weight ??? 6 (0.21) ??? g (oz) thermal resistance www.irf.com 1 pd -95190 ? lead-free
IRG4PH50UDPBF 2 www.irf.com parameter min. typ. max. units conditions v (br)ces collector-to-emitter breakdown voltage 1200 ? ? v v ge = 0v, i c = 250a ? v (br)ces / ? t j temperature coeff. of breakdown voltage ? 1.20 ? v/c v ge = 0v, i c = 1.0ma v ce(on) collector-to-emitter saturation voltage ? 2.56 3.5 i c = 20a v ge = 15v ? 2.78 3.7 i c = 24a ? 3.20 ? v i c = 45a see fig. 2, 5 ? 2.54 ? i c = 24a, t j = 150c v ge(th) gate threshold voltage 3.0 ? 6.0 v ce = v ge , i c = 250a ? v ge(th) / ? t j temperature coeff. of threshold voltage ? -13 ? mv/c v ce = v ge , i c = 250a g fe forward transconductance 23 35 ? s v ce = 100v, i c = 24a i ces zero gate voltage collector current ? ? 250 a v ge = 0v, v ce = 1200v ? ? 6500 v ge = 0v, v ce = 1200v, t j = 150c v fm diode forward voltage drop ? 2.5 3.5 v i c = 16a see fig. 13 ? 2.1 3.0 i c = 16a, t j = 150c i ges gate-to-emitter leakage current ? ? 100 na v ge = 20v parameter min. typ. max. units conditions q g total gate charge (turn-on) ? 160 250 i c = 24a qge gate - emitter charge (turn-on) ? 27 40 nc v cc = 400v see fig. 8 q gc gate - collector charge (turn-on) ? 53 80 v ge = 15v t d(on) turn-on delay time ? 47 ? t j = 25c t r rise time ? 24 ? ns i c = 24a, v cc = 800v t d(off) turn-off delay time ? 110 170 v ge = 15v, r g = 5.0 ? t f fall time ? 180 260 energy losses include "tail" and e on turn-on switching loss ? 2.10 ? diode reverse recovery. e off turn-off switching loss ? 1.50 ? mj see fig. 9, 10, 18 e ts total switching loss ? 3.60 4.6 t d(on) turn-on delay time ? 46 ? t j = 150c, see fig. 11, 18 t r rise time ? 27 ? ns i c = 24a, v cc = 800v t d(off) turn-off delay time ? 240 ? v ge = 15v, r g = 5.0 ? t f fall time ? 330 ? energy losses include "tail" and e ts total switching loss ? 6.38 ? mj diode reverse recovery. l e internal emitter inductance ? 13 ? nh measured 5mm from package c ies input capacitance ? 3600 ? v ge = 0v c oes output capacitance ? 160 ? pf v cc = 30v see fig. 7 c res reverse transfer capacitance ? 31 ? ? = 1.0mhz t rr diode reverse recovery time ? 90 135 ns t j = 25c see fig. ? 164 245 t j = 125c 14 i f = 16a i rr diode peak reverse recovery current ? 5.8 10 a t j = 25c see fig. ? 8.3 15 t j = 125c 15 v r = 200v q rr diode reverse recovery charge ? 260 675 nc t j = 25c see fig. ? 680 1838 t j = 125c 16 di/dt = 200a/s di (rec)m /dt diode peak rate of fall of recovery ? 120 ? a/s t j = 25c see fig. during t b ?76? t j = 125c 17 switching characteristics @ t j = 25c (unless otherwise specified) electrical characteristics @ t j = 25c (unless otherwise specified)
IRG4PH50UDPBF www.irf.com 3 fig. 1 - typical load current vs. frequency (load current = i rms of fundamental) 0.1 1 10 100 0 5 10 15 20 25 30 f, frequency (khz) load current (a) for both: duty cycle: 50% t = 125c t = 9 0 c gate drive as specified sink j power dissipation = w 60% of rated voltage i ideal diodes square wave: 40 fig. 2 - typical output characteristics fig. 3 - typical transfer characteristics 1 10 100 1000 1 10 v , collector-to-emitter voltage (v) i , collector-to-emitter current (a) ce c v = 15v 20 s pulse width ge t = 25 c j o t = 150 c j o 1 10 100 1000 5 6 7 8 9 10 11 12 v , gate-to-emitter volta g e (v) i , collector-to-emitter current (a) ge c v = 50v 5 s pulse width cc t = 25 c j o t = 150 c j o
IRG4PH50UDPBF 4 www.irf.com fig. 6 - maximum effective transient thermal impedance, junction-to-case fig. 5 - typical collector-to-emitter voltage vs. junction temperature fig. 4 - maximum collector current vs. case temperature -60 -40 -20 0 20 40 60 80 100 120 140 160 2.0 2.5 3.0 3.5 4.0 t , junction temperature ( c) v , collector-to-emitter voltage(v) j ce v = 15v 80 us pulse width ge i = a 12 c i = a 24 c i = a 48 c 25 50 75 100 125 150 0 10 20 30 40 50 t , case temperature ( c) maximum dc collector current(a) c 0.001 0.01 0.1 1 0.00001 0.0001 0.001 0.01 0.1 1 notes: 1. duty factor d = t / t 2. peak t = p x z + t 1 2 j dm thjc c p t t dm 1 2 t , rectangular pulse duration (sec) thermal response (z ) 1 thjc 0.01 0.02 0.05 0.10 0.20 0.50 single pulse (thermal response)
IRG4PH50UDPBF www.irf.com 5 fig. 7 - typical capacitance vs. collector-to-emitter voltage fig. 8 - typical gate charge vs. gate-to-emitter voltage 0 40 80 120 160 200 0 4 8 12 16 20 q , total gate charge (nc) v , gate-to-emitter voltage (v) g ge v = 400v i = 24a cc c 1 10 100 0 1000 2000 3000 4000 5000 6000 7000 v , collector-to-emitter voltage (v) c, capacitance (pf) ce v c c c = = = = 0v, c c c f = 1mhz + c + c c shorted ge ies g e g c , ce res g c oes ce g c c ies c oes c res fig. 9 - typical switching losses vs. gate resistance fig. 10 - typical switching losses vs. junction temperature 0 10 20 30 40 50 3.00 3.40 3.80 4.20 4.60 5.00 r , gate resistance (ohm) total switching losses (mj) g v = 480v v = 15v t = 25 c i = 25a cc ge j c ? 24a -60 -40 -20 0 20 40 60 80 100 120 140 160 1 10 100 t , junction temperature ( c ) total switching losses (mj) j r = ohm v = 15v v = 800v g ge cc i = a 48 c i = a 24 c i = a 12 c 5.0 ? total switching losses ( mj)
IRG4PH50UDPBF 6 www.irf.com fig. 12 - turn-off soa fig. 13 - typical forward voltage drop vs. instantaneous forward current fig. 11 - typical switching losses vs. collector-to-emitter current 0 10 20 30 40 50 0 3 6 9 12 15 i , collector-to-emitter current (a) total switching losses (mj) c r = ohm t = 150 c v = 480v v = 15v g j cc ge 5.0 ? 1 10 100 1000 1 10 100 1000 10000 v = 20v t = 125 c ge j o v , collector-to-emitter volta g e (v) i , collector-to-emitter current (a) ce c safe operating area 1 10 100 1000 0.0 2.0 4.0 6.0 8.0 fm t = 150c t = 125c t = 25c j j j forward volta g e dro p - v ( v ) instantaneous forward current ( a )
IRG4PH50UDPBF www.irf.com 7 fig. 14 - typical reverse recovery vs. di f /dt fig. 15 - typical recovery current vs. di f /dt fig. 16 - typical stored charge vs. di f /dt fig. 17 - typical di (rec)m /dt vs. di f /dt 0 100 200 300 100 1000 trr - (ns) f di /dt - ( a/ s ) i = 3 2 a i = 1 6a i = 8.0a f f f v = 200v t = 125c t = 25c r j j 0 300 600 900 1200 100 1000 f di /dt - ( a/ s ) rr q - (nc ) i = 32a i = 16a i = 8.0a f f f v = 200v t = 125c t = 25c r j j 10 100 1000 100 1000 f di /d t - ( a/ s ) di(rec)m /dt - (a/s) i = 32 a i =16a i = 8.0a f f f v = 200v t = 125c t = 25c r j j 0 10 20 30 40 100 1000 f di /dt - ( a/ s ) rrm i - (a) i = 8.0a i = 16a i = 32a f f f v = 200v t = 125c t = 25c r j j
IRG4PH50UDPBF 8 www.irf.com same type device as d.u.t. d.u.t. 430f 80% of vce fig. 18a - test circuit for measurement of i lm , e on , e off(diode) , t rr , q rr , i rr , t d(on) , t r , t d(off) , t f fig. 18b - test waveforms for circuit of fig. 18a, defining e off , t d(off) , t f vce ie dt t2 t1 5% vce ic ipk vcc 10% ic vce t1 t2 dut voltage and current gate voltage d.u.t. +vg 10% +vg 90% ic tr td(on) diode reverse recovery energy tx eon = erec = t4 t3 vd id dt t4 t3 diode recovery w aveforms ic vpk 10% vcc irr 10% irr vcc trr qrr = trr tx id dt fig. 18c - test waveforms for circuit of fig. 18a, defining e on , t d(on) , t r fig. 18d - test waveforms for circuit of fig. 18a, defining e rec , t rr , q rr , i rr vd ic dt vce ic dt ic dt t=5s d(on) t t f t r 90% t d(off) 10% 90% 10% 5% c i c e on e off ts on off e = (e +e ) v v ge
IRG4PH50UDPBF www.irf.com 9 vg gate signal device under test current d.u.t. voltage in d.u.t. current in d1 t0 t1 t2 d.u.t. v * c 50v l 1000v 6000f 100v figure 19. clamped inductive load test circuit figure 20. pulsed collector current test circuit r l = 800v 4 x i c @25c 0 - 800v figure 18e. macro waveforms for figure 18a's test circuit
IRG4PH50UDPBF 10 www.irf.com notes: repetitive rating: v ge =20v; pulse width limited by maximum junction temperature (figure 20) v cc =80%(v ces ), v ge =20v, l=10h, r g = 5.0 ? (figure 19) pulse width 80s; duty factor 0.1%. pulse width 5.0s, single shot. data and specifications subject to change without notice. ir world headquarters: 233 kansas st., el segundo, california 90245, usa tel: (310) 252-7105 tac fax: (310) 252-7903 visit us at www.irf.com for sales contact information . 04/04 to-247ac part marking information example: as s e mb led on ww 35, 2000 lot code 5657 wit h as s e mb l y t his is an irfpe30 in t he as s embly line "h" 035h logo internat ional rectifier irfpe30 lot code as s e mb l y 56 57 part number dat e code ye ar 0 = 2000 we e k 35 line h note: "p" in assembly line position indicates "lead-free" to-247ac package outline dimensions are shown in millimeters (inches)
note: for the most current drawings please refer to the ir website at: http://www.irf.com/package/

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