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RSD131P10 RSD131P10 pch 100v 13a power mosfet l outline v dss - 100v cpt3 (sc-63) r ds(on) (max.) 200m w i d - 13a p d 20w l features l inner circuit 1) low on-resistance. 2) fast switching speed. 3) drive circuits can be simple. 4) parallel use is easy. 5) pb-free lead plating ; rohs compliant 6) 100% avalanche tested l packaging specifications type packaging taping l application reel size (mm) 330 switching power supply tape width (mm) 16 automotive motor drive basic ordering unit (pcs) 2,500 drain - source voltage v dss - 100 v automotive solenoid drive taping code tl marking 131p10 l absolute maximum ratings (t a = 25c) parameter symbol value unit pulsed drain current i d,pulse *2 ? 52 a t c = 25c t c = 100c continuous drain current i d *1 a ? 13 i d *1 ? 7.0 a p d 0.85 w avalanche energy, single pulse avalanche current t c = 25c t a = 25c *4 power dissipation gate - source voltage v gss ? 20 v p d 20 w mj a e as *3 i ar *3 11.9 - 13 junction temperature t j 150 c range of storage temperature t stg - 55 to + 150 c * 1 esd protection diode * 2 body diode (1) gate (2) drain (3) source (1) (2) (3) (1) (3) (2) * 1 * 2 1/12 2012.08 - rev.a dat asheet www.rohm.com ? 2012 rohm co., ltd. all rights reserved.
RSD131P10 thermal resistance, junction - ambient - 150 220 v gs = - 4.0v, i d = - 6.5a - 155 230 350 r ds(on) *5 l electrical characteristics (t a = 25c) parameter drain - source breakdown voltage zero gate voltage drain current v (br)dss i dss - - - - 1 - - 100 values unit g fs v ds = - 100v, v gs = 0v t j = 25c v ds = - 100v, v gs = 0v l thermal resistance parameter symbol symbol conditions v gs = 0v, i d = - 1ma t sold thermal resistance, junction - ambient *4 soldering temperature, wavesoldering for 10s r thja r thjc v gs = - 4.5v, i d = - 6.5a values unit min. typ. max. - 6.25 c/w - - c/w 147 - min. typ. max. c v - 100 - - - - 265 ? 10 m a t j = 125c v gate threshold voltage v gs (th) v ds = - 10v, i d = - 1ma - 1 - - 2.5 gate - source leakage current i gss v gs = ? 20v, v ds = 0v - - m a m w v gs = - 10v, i d = - 13a t j = 125c forward transfer admittance v ds = - 10v, i d = - 13a 10 20 - s static drain - source on - state resistance v gs = - 10v, i d = - 6.5a - 135 200 - 250 2/12 2012.08 - rev.a www.rohm.com ? 2012 rohm co., ltd. all rights reserved. data sheet
RSD131P10 *1 limited only by maximum temperature allowed. *2 pw ? 10 m s, duty cycle ? 1% *3 l ? 100 m h, v dd = - 50v, rg = 10 w , starting t j = 25c *4 mounted on a epoxy pcb fr4 (20mm 30mm 0.8mm) *5 pulsed - continuous source current 40 - i s = - 13a di/dt = -100a/ m s reverse recovery charge q rr *5 - 160 - z body diode electrical characteristics (source-drain)(t a = 25c) parameter symbol conditions values unit min. typ. max. gate plateau voltage v (plateau) v dd ? - 50v, i d = - 13a - - 3.2 m c - 52 a forward voltage v sd *5 v gs = 0v, i s = - 13a - - - 1.2 v 60 - ns t c = 25c reverse recovery time t rr *5 i s *1 - - - 13 a pulsed source current i sm *2 - z electrical characteristics (t a = 25c) parameter symbol conditions values unit min. typ. max. pf output capacitance c oss v ds = - 25v - 100 - reverse transfer capacitance c rss f = 1mhz input capacitance c iss v gs = 0v - 2400 - - 65 - turn - on delay time t d(on) *5 v dd ? - 50v, v gs = - 10v - 20 - ns rise time t r *5 i d = - 6.5a - 25 - turn - off delay time t d(off) *5 r l = 7.68 w - 70 - fall time t f *5 r g = 10 w - 60 - z gate charge characteristics (t a = 25c) parameter symbol conditions values unit min. typ. max. - - v i d = - 13a v gs = - 10v - 6 - gate - drain charge q gd *5 - 6 - nc gate - source charge q gs *5 total gate charge q g *5 v dd ? - 50v - 3/12 2012.08 - rev.a www.rohm.com ? 2012 rohm co., ltd. all rights reserved. data sheet
RSD131P10 l electrical characteristic curves 0 20 40 60 80 100 120 0 25 50 75 100 125 150 175 0.01 0.1 1 10 0.0001 0.001 0.01 0.1 1 10 100 1000 t a =25 oc r th(j - c)(t) = r (t) r th(ch - c) r th(j - c) = 6.25 oc /w top d = 1 d = 0.5 d = 0.1 d = 0.05 d = 0.01 d = single 0.01 0.1 1 10 100 0.1 1 10 100 1000 t a =25 oc single pulse p w = 100us p w = 1ms p w = 10ms operation in this area is limited by r ds(on) fig.1 power dissipation derating curve fig.2 maximum safe operating area power dissipation : p d /p d max. [%] drain current : - i d [a] fig.3 normalized transient thermal resistance vs. pulse width normalized transient thermal resistance : r (t) pulse width : p w [s] junction temperature : t j [ c] drain - source voltage : - v ds [v] 4/12 2012.08 - rev.a www.rohm.com ? 2012 rohm co., ltd. all rights reserved. data sheet
RSD131P10 l electrical characteristic curves 0.1 1 10 100 0.01 0.1 1 10 100 v dd = - 50v,r g =25 w v gf = - 10v,v gr =0v starting t ch =25 oc 0 20 40 60 80 100 120 0 25 50 75 100 125 150 175 0 2 4 6 8 10 12 14 0 0.2 0.4 0.6 0.8 1 v gs =2.5v v gs =3.0v t a =25 oc pulsed v gs =10.0v v gs =3.5v v gs =4.0v 0 1 2 3 4 5 6 7 8 9 10 11 12 13 14 0 2 4 6 8 10 v gs =2.4v t a =25 oc pulsed v gs =10.0v v gs =4.0v v gs =2.5v v gs =3.0v fig.6 typical output characteristics(i) drain current : - i d [a] drain - source voltage : - v ds [v] fig.7 typical output characteristics(ii) drain current : - i d [a] drain - source voltage : - v ds [v] fig.4 avalanche current vs inductive load avalanche current : - i as [a] coil inductance : l [mh] fig.5 avalanche energy derating curve vs junction temperature avalanche energy : e as / e as max. [%] junction temperature : t j [ c] 5/12 2012.08 - rev.a www.rohm.com ? 2012 rohm co., ltd. all rights reserved. data sheet
RSD131P10 l electrical characteristic curves 60 70 80 90 100 110 120 -50 0 50 100 150 v gs = 0v i d = - 1ma 0.001 0.01 0.1 1 10 100 0 1 2 3 4 5 v ds = - 10 v t a = 125 oc t a = 75 oc t a = 25 oc t a = - 25 oc 0.0 0.5 1.0 1.5 2.0 2.5 3.0 -50 -25 0 25 50 75 100 125 150 v ds = - 10v i d = - 1ma 0.01 0.1 1 10 100 0.01 0.1 1 10 100 v ds = - 10 v t a = - 25 oc t a =25 oc t a =75 oc t a =125 oc fig.10 gate threshold voltage vs. junction temperature gate threshold voltage : - v gs(th) [v] junction temperature : t j [ c ] fig.11 transconductance vs. drain current transconductance : g fs [s] drain current : - i d [a] fig.8 breakdown voltage vs. junction temperature junction temperature : t j [ c] fig.9 typical transfer characteristics gate - source voltage : - v gs [v] drain current : - i d [a] normarize drain - source breakdown voltage : - v (br)dss [v] 6/12 2012.08 - rev.a www.rohm.com ? 2012 rohm co., ltd. all rights reserved. data sheet
RSD131P10 l electrical characteristic curves 0 50 100 150 200 250 300 350 400 0 5 10 15 t a =25 oc i d = - 13a i d = - 7.5 a 10 100 1000 0.01 0.1 1 10 100 t a =25 oc v gs = - 1 0 v v gs = - 4.5 v v gs = - 4.0 v 0 50 100 150 200 250 300 350 400 -50 0 50 100 150 v gs = - 10v i d = - 13a fig.13 static drain - source on - state resistance vs. drain current(i) static drain - source on - state resistance : r ds(on) [m w ] junction temperature : t j [oc] fig.14 static drain - source on - state resistance vs. j unction temperature static drain - source on - state resistance : r ds(on) [m w ] drain current : - i d [a] fig.12 static drain - source on - state resistance vs. gate source voltage static drain - source on - state resistance : r ds(on) [m w ] gate - source voltage : - v gs [v] 7/12 2012.08 - rev.a www.rohm.com ? 2012 rohm co., ltd. all rights reserved. data sheet
RSD131P10 l electrical characteristic curves fig.16 static drain - source on - state resistance vs. drain current(iii) 0 20 40 60 80 100 120 0 25 50 75 100 125 150 175 10 100 1000 0.01 0.1 1 10 100 t a =125 oc t a =75 oc t a =25 oc t a = - 25 oc v gs = - 10v 10 100 1000 0.01 0.1 1 10 100 t a =125 oc t a =75 oc t a =25 oc t a = - 25 oc v gs = - 4.5v 10 100 1000 0.01 0.1 1 10 100 t a =125 oc t a =75 oc t a =25 oc t a = - 25 oc v gs = - 4.0v fig.15 static drain - source on - state resistance vs. drain current(ii) static drain - source on - state resistance : r ds(on) [m w ] drain current : - i d [a] static drain - source on - state resistance : r ds(on) [m w ] drain current : - i d [a] fig.18 drain current derating curve drain current dissipation : i d /i d max. (%) fig.17 static drain - source on - state resistance vs. drain current(iv) static drain - source on - state resistance : r ds(on) [m w ] drain current : - i d [a] junction temperature : t j [oc] 8/12 2012.08 - rev.a www.rohm.com ? 2012 rohm co., ltd. all rights reserved. data sheet
RSD131P10 l electrical characteristic curves fig.19 typical capacitance vs. drain - source voltage 10 100 1000 10000 100000 0.01 0.1 1 10 100 c oss c rss c iss t a = 25oc f = 1mhz v gs = 0v 1 10 100 1000 10000 0.01 0.1 1 10 100 t r t d(on) t d(off) t a =25 oc v dd = - 50 v v gs = - 10 v r g =10 w t f 0 5 10 0 5 10 15 20 25 30 35 40 t a =25 oc v dd = - 50 v i d = - 13 a r g =10 w 0.01 0.1 1 10 100 0.0 0.5 1.0 1.5 t a =125oc t a =75oc t a =25oc t a = - 25 oc v gs =0v capacitance : c [pf] drain - source voltage : - v ds [v] fig.21 dynamic input characteristics gate - source voltage : - v gs [v] total gate charge : q g [nc] fig.20 switching characteristics switching time : t [ns] drain current : - i d [a] fig.22 source current vs. source - drain voltage source current : - i s [a] source - drain voltage : - v sd [v] 9/12 2012.08 - rev.a www.rohm.com ? 2012 rohm co., ltd. all rights reserved. data sheet
RSD131P10 l electrical characteristic curves 1 10 100 0.1 1 10 100 t a =25 oc di / dt = - 100a / m s v gs = 0v fig23 reverse recovery time vs.source current reverse recovery time : trr [ns] source current : - i s [a] 10/12 2012.08 - rev.a www.rohm.com ? 2012 rohm co., ltd. all rights reserved. data sheet
RSD131P10 l measurement circuits fig.1-1 switching time measurement circuit fig.1-2 switching waveforms fig.2-1 gate charge measurement circuit fig.2-2 gate charge waveform fig.3-1 avalanche measurement circuit fig.3-2 avalanche waveform 11/12 2012.08 - rev.a www.rohm.com ? 2012 rohm co., ltd. all rights reserved. data sheet
RSD131P10 l dimensions (unit : mm) dimension in mm/inches cpt3 12/12 2012.08 - rev.a www.rohm.com ? 2012 rohm co., ltd. all rights reserved. data sheet d b1 e b b3 b2 l3 a2 h a1 a3 c l1 lp x b a l e l2 l3 l2 l1 b6 b5 e l4 c1 b a min max min max a1 0.00 0.15 0 0.006 a2 2.20 2.50 0.087 0.098 a3 b 0.55 0.75 0.022 0.03 b1 5.00 5.30 0.197 0.209 b2 b3 c 0.40 0.60 0.016 0.024 c1 0.40 0.60 0.016 0.024 d 6.30 6.70 0.248 0.264 e 5.40 5.80 0.213 0.228 e h e 9.00 10.00 0.354 0.394 l 2.20 2.80 0.087 0.11 l1 0.80 1.40 0.031 0.055 l2 1.20 1.80 0.047 0.071 l3 l4 lp 1.00 1.60 0.039 0.063 x - 0.25 - 0.01 min max min max b5 - 1.00 - 0.04 b6 - 5.20 - 0.205 hh>y - 2.50 - 0.098 hh>t - 5.50 - 0.217 hh>? - 10.00 - 0.394 0.90 0.035 0.25 0.01 2.30 0.09 5.30 0.209 dim milimeters inches dim milimeters inches 5.00 0.20 0.75 0.03
r1120a www.rohm.com ? 2012 rohm co., ltd. all rights reserved. notice rohm customer support system http://www.rohm.com/contact/ thank you for your accessing to rohm product informations. more detail product informations and catalogs are available, please contact us. notes no copying or reproduction of this document, in part or in whole, is permitted without the consent of rohm co.,ltd. the content specied herein is subject to change for improvement without notice. the content specied herein is for the purpose of introducing rohm's products (hereinafter "products"). if you wish to use any such product, please be sure to refer to the specications, which can be obtained from rohm upon request. examples of application circuits, circuit constants and any other information contained herein illustrate the standard usage and operations of the products. the peripheral conditions must be taken into account when design ing circuits for mass production. great care was taken in ensuring the accuracy of the information specied in this document. however, should you incur any damage arising from any inaccuracy or misprint of such information, rohm shall bear no responsibility for such damage. the technical information specied herein is intended only to show the typical functions of and examples of application circuits for the produc ts. rohm does not grant you, explicitly or implicitly, any license to use or exercise intellectual property or other rights held by rohm and other parties. rohm shall bear no responsibility whatsoever for any dispute arising from the use of such technical information. the products specied in this document are intended to be used with general-use electronic equipment or devices (such as audio visual equipment, ofce-automation equipment, commu- nication devices, electronic appliances and amusement devices). the products specied in this document are not designed to be radiation tolerant. while rohm always makes efforts to enhance the quality and reliability of its products, a product may fail or malfunction for a variety of reasons. please be sure to implement in your equipment using the products safety measures to guard against the possibility of physical injury, re or any other damage caused in the event of the failure of any product, such as derating, redundancy, re control and fail-safe designs. rohm shall bear no responsibility whatsoever for your use of any product outside of the prescribed scope or not in accordance with the instruction manual. the products are not designed or manufactured to be used with any equipment, device or system which requires an extremely high level of reliability the failure or malfunction of which may result in a direct threat to human life or create a risk of human injury (such as a medical instrument, transportation equipment, aerospace machinery, nuclear-reactor controller, fuel- controller or other safety device). rohm shall bear no responsibility in any way for use of any of the products for the above special purposes. if a product is intended to be used for any such special purpose, please contact a rohm sales representative before purchasing. if you intend to export or ship overseas any product or technology specied herein that may be controlled under the foreign exchange and the foreign trade law, you will be required to obtain a license or permit under the law.

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