publication date : oct., 2011 1 < low noise gaas hemt > MGF4921AM 4pin flat lead package description the MGF4921AM super-low noise ingaas hemt (high electron mobility transistor) is designed for use in l to c band amplifiers. the 4pin flat lead package is small-thin size, and offers high cost performance. features ? low noise figure nfmin. = 0.35db (typ.) @ f=2.4ghz nfmin. = 0.35db (typ.) @ f=4ghz ? high associated gain gs = 18.0db (typ.) @ f=2.4ghz gs = 13.0db (typ.) @ f=4ghz application l to c band low noise amplifiers quality grade gg recommended bias conditions v ds =2v , i d =10~25ma ordering information tape & reel 15000pcs/reel rohs compliant MGF4921AM is a rohs compliant product. rohs compliance is indicated by the letter ?g? after the lot marking. absolute maximum ratings (ta=25 ? c ) symbol parameter ratings unit v gdo gate to drain voltage -3 v v gso gate to source voltage -3 v i d drain current idss ma pt total power dissipation 130 mw t ch channel temperature 125 ? c t stg storage temperature -55 to +125 ? c electrical characteristics (ta=25 ? c) symbol parameter test conditions limits unit min. typ. max v (br)gdo gate to drain breakdown voltage i g =-78 ? a -3.5 -- -- v i gss gate to source leakage current v gs =-2v,v ds =0v -- -- 50 ? a i dss saturated drain current v gs =0v,v ds =2v 30 -- 150 ma v gs(off) gate to source cut-off voltage v ds =2v,i d =390 ? a -0.2 -- -1.5 v gs associated gain v ds =2v, -- 18 -- db nfmin. minimum noise figure i d =10ma, f=2.4ghz -- 0.35 -- db gs associated gain v ds =2v, 11.5 13 -- db nfmin. minimum noise figure i d =15ma, f=4ghz -- 0.35 0.55 db note 1: gs and nfmin. @2.4ghz are not tested. note 2: gs and nfmin. @4ghz are tested with sampling inspection. outline drawing fig.1 mitsubishi proprietary not to be reproduced or disclosed without permission by mitsubishi electric
< low noise gaas hemt > MGF4921AM 4pin flat lead package publication date : oct., 2011 2 0.30 0.11 1.25 2.05 2.10 (0.85) 0.49 +0.1 -0.05 0.1 0.30 -0.05 +0.1 -0.05 +0.1 +0.1 -0.05 -0 +0.05 0.1 0.1 0.05 (0.65) (0.65) 0.05 0.05 0.30 0.40 (0.65) (0.60) 1.30 1.25 (0.65) (0.60) 1.30 1.25 fig.1 top side bottom unit: mm gate source drain (gd-30) c
< low noise gaas hemt > MGF4921AM 4pin flat lead package publication date : oct., 2011 3 typical characteristics (ta=25c) i d vs. v ds i d vs. v gs (v gs =~0.1v/step) (v ds =2v) nf & gs vs. i d nf & gs vs. f 0 50 100 150 200 01234 drain to source voltage,v ds (v) drain current,i d (ma) 0 50 100 150 200 -1.0 -0.5 0.0 gate to source voltage,v gs (v) drain current,i d (ma) nf&gs vs. i d 0.0 0.2 0.4 0.6 0.8 1.0 1.2 1.4 1.6 1.8 2.0 0 5 10 15 20 25 30 35 drain current,i d (ma) noise figure,nf(db) 0 5 10 15 20 25 associated gain,gs(db) gs nf f=2.4ghz vds=2v nf&gs vs f 0.0 0.2 0.4 0.6 0.8 1.0 1.2 1.4 1.6 1.8 2.0 2.3 2.4 2.5 frequency,f(ghz) noise figure,nf(db) 0 5 10 15 20 25 associated gain,gs(db) gs nf vds=2v id=10ma
< low noise gaas hemt > MGF4921AM 4pin flat lead package publication date : oct., 2011 4 typical characteristics (ta=25c) po,im3 vs . pin -80 -60 -40 -20 0 20 40 -25 -20 -15 -10 -5 0 5 10 15 p in (dbm)s.c.l p out , im 3 (dbm)s.c.l pout im 3 f=2.32gh z, 3m h z offse t iip 3 =5.0dbm oip 3 =21dbm nf&gs vs. id 0.0 0.2 0.4 0.6 0.8 1.0 1.2 1.4 1.6 1.8 2.0 0 5 10 15 20 25 30 35 drain current,id(ma) noise figure,nf(db) 0 5 10 15 20 25 associated gain,gs(db) gs nf f=4ghz vds=2v nf&gs vs f 0.0 0.2 0.4 0.6 0.8 1.0 1.2 1.4 1.6 1.8 2.0 3.9 4.0 4.1 frequency,f(ghz) noise figure,nf(db) 0 5 10 15 20 25 associated gain,gs(db) gs nf vds=2v id=15ma
< low noise gaas hemt > MGF4921AM 4pin flat lead package publication date : oct., 2011 5 s parameters (vds=2v,id=10ma,ta=room temperature) note : we are ready to provide nonlinear model for ads and mwo users. if you are interested, please contact our sales offices. freq. (ghz) (mag) (ang) (mag) (ang) (mag) (ang) (mag) (ang) 1 0.951 -31.0 6.561 150.5 0.040 74.0 0.394 -22.9 2 0.824 -60.7 5.902 123.3 0.074 59.6 0.330 -44.8 3 0.684 -89.5 5.133 99.2 0.101 47.8 0.256 -66.3 4 0.557 -120.4 4.387 77.6 0.121 37.9 0.186 -94.3 5 0.481 -149.3 3.755 58.9 0.139 29.8 0.138 -126.6 6 0.458 -177.0 3.252 42.1 0.156 22.4 0.127 -165.0 7 0.461 157.6 2.833 26.6 0.170 15.3 0.149 160.4 8 0.485 136.9 2.496 12.2 0.185 7.9 0.194 135.0 9 0.531 120.3 2.232 -1.0 0.199 0.9 0.235 117.7 10 0.576 104.2 2.029 -14.0 0.213 -6.6 0.281 105.0 11 0.615 90.3 1.849 -27.2 0.227 -14.5 0.342 95.0 12 0.652 78.9 1.699 -39.6 0.237 -22.2 0.403 83.4 13 0.710 67.2 1.565 -52.8 0.252 -30.5 0.460 73.6 14 0.757 55.5 1.409 -67.1 0.257 -39.5 0.520 63.7 15 0.769 44.9 1.247 -79.8 0.259 -47.5 0.596 54.3 16 0.798 37.2 1.104 -91.4 0.265 -54.5 0.658 43.1 s22 s11 s21 s12 recommended foot pattern; fr4 ( ?
< low noise gaas hemt > MGF4921AM 4pin flat lead package publication date : oct., 2011 6 s parameters (vds=2v,id=15ma,ta=room temperature) note : we are ready to provide nonlinear model for ads and mwo users. if you are interested, please contact our sales offices. recommended foot pattern; fr4 ( ? freq. (ghz) (mag) (ang) (mag) (ang) (mag) (ang) (mag) (ang) 1 0.937 -33.4 7.730 148.3 0.037 74.5 0.332 -23.6 2 0.787 -64.5 6.735 120.1 0.069 61.4 0.269 -45.5 3 0.636 -93.8 5.682 96.1 0.095 50.7 0.200 -67.0 4 0.512 -125.1 4.757 75.1 0.117 41.4 0.139 -98.3 5 0.444 -154.1 4.019 57.2 0.137 33.5 0.102 -137.5 6 0.429 178.5 3.457 41.1 0.156 25.8 0.109 179.6 7 0.440 153.6 2.998 26.1 0.173 18.1 0.146 148.1 8 0.468 133.6 2.635 12.3 0.190 10.1 0.197 126.3 9 0.517 117.7 2.355 -0.4 0.205 2.3 0.241 110.9 10 0.563 102.2 2.141 -13.0 0.219 -5.9 0.287 99.5 11 0.603 88.7 1.954 -25.9 0.233 -14.1 0.345 90.6 12 0.640 77.7 1.798 -37.8 0.243 -22.3 0.405 79.8 13 0.697 66.3 1.662 -50.7 0.255 -30.9 0.459 70.3 14 0.744 55.0 1.506 -64.8 0.260 -39.9 0.515 61.1 15 0.757 44.6 1.343 -77.4 0.261 -47.9 0.587 52.3 16 0.786 37.2 1.200 -89.0 0.267 -54.9 0.647 41.5 s22 s11 s21 s12
< low noise gaas hemt > MGF4921AM 4pin flat lead package publication date : oct., 2011 7 s parameters (vds=2v,id=10ma,ta=room temperature) noise parameters (v ds =2v,i d =10ma, ta=room temperature) freq. s11 s21 s12 s22 ( ghz ) ( ma g) ( an g) ( ma g) ( an g) ( ma g) ( an g) ( ma g) ( an g) 2.0 0.873 -57.9 5.887 129.1 0.072 54.7 0.383 -50.0 2.2 0.853 -64.2 5.870 124.4 0.079 51.9 0.378 -54.0 2.4 0.833 -69.7 5.750 119.9 0.084 48.8 0.368 -58.7 2.6 0.818 -73.6 5.442 116.1 0.089 45.1 0.363 -65.0 2.8 0.795 -79.7 5.401 111.5 0.093 43.0 0.336 -68.9 3.0 0.769 -86.7 5.366 106.7 0.098 40.3 0.328 -73.9 3.2 0.752 -91.6 5.201 102.8 0.103 37.5 0.320 -78.7 3.4 0.737 -96.5 5.029 99.0 0.106 34.4 0.310 -84.8 3.6 0.714 -102.4 4.959 94.8 0.109 32.4 0.291 -89.1 3.8 0.694 -107.8 4.856 90.7 0.113 30.2 0.282 -93.1 4.0 0.680 -113.1 4.733 86.8 0.117 27.7 0.274 -98.2 4.2 0.667 -118.0 4.587 83.3 0.119 25.1 0.265 -104.0 4.4 0.648 -123.5 4.503 79.3 0.122 23.2 0.252 -108.7 4.6 0.634 -128.9 4.399 75.6 0.124 21.2 0.244 -113.4 4.8 0.621 -134.2 4.287 72.1 0.127 19.0 0.237 -118.8 5.0 0.612 -138.9 4.172 68.7 0.129 16.9 0.229 -124.4 5.2 0.602 -143.9 4.068 65.1 0.131 15.0 0.220 -130.1 5.4 0.591 -149.4 3.986 61.6 0.133 13.0 0.215 -135.6 5.6 0.583 -154.2 3.880 58.3 0.135 11.1 0.209 -140.4 5.8 0.577 -159.2 3.785 54.9 0.136 9.1 0.206 -147.0 6.0 0.569 -164.4 3.697 51.6 0.138 7.3 0.204 -152.6 freq. nfmin opt rn (ghz) (db) (mag) (ang) ( ? ) 2.0 0.360.8613.90.23 2.2 0.370.8316.50.22 2.4 0.350.8119.40.22 2.6 0.330.7922.50.21 2.8 0.340.7625.70.20 3.0 0.330.7429.10.19 3.2 0.350.7132.60.19 3.4 0.350.6936.40.18 3.6 0.350.6640.30.17 3.8 0.370.6444.40.16 4.0 0.350.6248.60.15 4.2 0.410.6053.00.15 4.4 0.390.5957.60.14 4.6 0.380.5762.30.13 4.8 0.400.5667.10.12 5.0 0.380.5572.00.12 5.2 0.390.5477.10.11 5.4 0.400.5482.30.10 5.6 0.400.5487.70.10 5.8 0.390.5493.10.09 6.0 0.390.5598.70.08 board: ? r =2.6 (ptfe) thickness: 0.4mm (4- ? 0.4: through-hole) reference point reference point 0.96 45? drain gate 2.5mm note : we are ready to provide nonlinear model for ads and mwo users. if you are interested, please contact our sales offices.
< low noise gaas hemt > MGF4921AM 4pin flat lead package publication date : oct., 2011 8 s parameters (vds=2v,id=15ma,ta=room temperature) noise parameters (v ds =2v,i d =15ma, ta=room temperature) freq. s11 s21 s12 s22 ( ghz ) ( ma g) ( an g) ( ma g) ( an g) ( ma g) ( an g) ( ma g) ( an g) 2.0 0.851 -61.9 6.821 126. 7 0.066 55.4 0.313 -54.2 2.2 0.826 -68.4 6.756 121. 7 0.072 52.5 0.308 -58.8 2.4 0.804 -74.0 6.578 117. 2 0.077 49.7 0.298 -63.9 2.6 0.789 -78.5 6.248 113. 4 0.082 46.3 0.292 -70.9 2.8 0.762 -84.7 6.160 108. 7 0.085 44.5 0.270 -74.7 3.0 0.734 -91.7 6.063 103. 8 0.090 41.9 0.262 -80.6 3.2 0.716 -96.8 5.857 100. 0 0.094 39.4 0.255 -85.9 3.4 0.701 -102.0 5.661 96. 2 0.097 36.6 0.246 -92.5 3.6 0.677 -107.8 5.544 91. 9 0.100 34.8 0.231 -97.3 3.8 0.657 -113.2 5.397 88. 0 0.104 32.7 0.223 -101.9 4.0 0.643 -118.7 5.244 84. 2 0.107 30.5 0.217 -107.5 4.2 0.629 -123.8 5.076 80. 7 0.109 28.2 0.210 -113.8 4.4 0.612 -129.2 4.965 76. 8 0.112 26.5 0.198 -119.4 4.6 0.599 -134.5 4.826 73. 2 0.115 24.6 0.194 -124.8 4.8 0.587 -139.9 4.692 69. 7 0.117 22.6 0.190 -130.7 5.0 0.578 -144.6 4.557 66. 4 0.119 20.7 0.185 -136.9 5.2 0.570 -149.6 4.435 63. 0 0.122 19.0 0.180 -143.5 5.4 0.561 -155.0 4.326 59. 6 0.124 17.1 0.178 -149.4 5.6 0.554 -159.8 4.207 56. 4 0.126 15.4 0.175 -154.7 5.8 0.549 -164.8 4.096 53. 2 0.128 13.6 0.175 -161.7 6.0 0.543 -169.9 3.993 49. 9 0.130 11.9 0.177 -167.5 freq. nfmin opt rn (ghz) (db) (mag) (ang) ( ? ) 2.0 0.330.8012.70.20 2.2 0.330.7715.30.19 2.4 0.350.7518.20.19 2.6 0.330.7221.10.18 2.8 0.320.7024.30.17 3.0 0.340.6727.70.16 3.2 0.360.6531.30.16 3.4 0.310.6335.10.15 3.6 0.320.6139.00.14 3.8 0.320.5943.20.13 4.0 0.350.5847.50.13 4.2 0.340.5652.00.12 4.4 0.350.5556.60.12 4.6 0.360.5461.50.11 4.8 0.340.5366.40.10 5.0 0.350.5371.60.10 5.2 0.330.5376.80.09 5.4 0.360.5382.30.09 5.6 0.370.5487.90.08 5.8 0.360.5593.60.07 6.0 0.380.5699.40.07 board: ? r =2.6 (ptfe) thickness: 0.4mm (4- ? 0.4: through-hole) reference point reference point 0.96 45? drain gate 2.5mm note : we are ready to provide nonlinear model for ads and mwo users. if you are interested, please contact our sales offices.
< low noise gaas hemt > MGF4921AM 4pin flat lead package publication date : oct., 2011 9 s parameters (vds=2v,id=20ma,ta=room temperature) noise parameters (v ds =2v,i d =20ma, ta=room temperature) board: ? r =2.6 (ptfe) thickness: 0.4mm (4- ? 0.4: through-hole) reference point reference point 0.96 45? drain gate 2.5mm freq. s11 s21 s12 s22 ( ghz ) ( ma g) ( an g) ( ma g) ( an g) ( ma g) ( an g) ( ma g) ( an g) 2.0 0.839 -63.7 7.275 125.6 0.064 55.9 0.283 -56.2 2.2 0.813 -70.2 7.173 120.5 0.069 53.2 0.278 -61.1 2.4 0.790 -75.9 6.969 116.0 0.074 50.4 0.268 -66.5 2.6 0.773 -80.6 6.635 112.1 0.078 47.3 0.261 -73.6 2.8 0.747 -86.9 6.513 107.4 0.082 45.4 0.241 -77.6 3.0 0.718 -93.8 6.383 102.6 0.086 42.9 0.234 -84.0 3.2 0.699 -99.0 6.161 98.7 0.090 40.5 0.228 -89.6 3.4 0.683 -104.3 5.951 94.9 0.093 37.9 0.220 -96.4 3.6 0.660 -110.1 5.808 90.7 0.096 36.2 0.206 -101.6 3.8 0.640 -115.4 5.641 86.9 0.100 34.2 0.199 -106.4 4.0 0.625 -120.9 5.476 83.1 0.103 32.1 0.194 -112.3 4.2 0.612 -126.2 5.297 79.6 0.105 29.9 0.188 -118.9 4.4 0.596 -131.5 5.171 75.9 0.108 28.3 0.178 -125.0 4.6 0.583 -136.7 5.018 72.3 0.111 26.4 0.175 -130.5 4.8 0.571 -142.2 4.872 68.8 0.114 24.5 0.173 -136.7 5.0 0.564 -146.9 4.730 65.6 0.116 22.7 0.169 -143.2 5.2 0.556 -151.8 4.598 62.2 0.118 21.0 0.166 -150.1 5.4 0.547 -157.2 4.480 58.9 0.121 19.2 0.165 -156.1 5.6 0.541 -162.0 4.354 55.7 0.123 17.5 0.163 -161.5 5.8 0.536 -167.0 4.237 52.5 0.125 15.7 0.165 -168.6 6.0 0.531 -172.0 4.126 49.4 0.127 14.1 0.169 -174.3 freq. nfmin opt rn (ghz) (db) (mag) (ang) ( ? ) 2.0 0.340.7812.50.19 2.2 0.320.7615.00.18 2.4 0.330.7417.90.18 2.6 0.340.7220.90.17 2.8 0.310.7024.00.16 3.0 0.320.6827.40.15 3.2 0.300.6631.00.15 3.4 0.330.6434.80.14 3.6 0.330.6238.70.13 3.8 0.340.6042.90.13 4.0 0.330.5947.20.12 4.2 0.320.5751.70.12 4.4 0.330.5656.30.11 4.6 0.340.5561.10.10 4.8 0.350.5466.10.10 5.0 0.330.5471.20.09 5.2 0.340.5376.50.08 5.4 0.320.5381.90.08 5.6 0.340.5387.50.07 5.8 0.350.5393.20.07 6.0 0.340.5499.00.06 note : we are ready to provide nonlinear model for ads and mwo users. if you are interested, please contact our sales offices.
< low noise gaas hemt > MGF4921AM 4pin flat lead package publication date : oct., 2011 10 ? 2011 mitsubishi electric corporation. all rights reserved. keep safety first in your circuit designs! ? mitsubishi electric corporation puts the maximum effort into making semiconductor products better and more reliable, but there is always the possibilit y that trouble may occur with them. trouble with semiconductors may lead to personal injury, fire ore property damage. remember to give due consideration to safety when making your circuit design s, with appropriate measures such as (i) placement of substitutive, auxiliary circuits, (ii) use of non -flammable material or (iii) prevention against any malfunction or mishap. notes regarding these materials ? these materials are intended as a reference to assi st our customers in the se lection of the mitsubishi semiconductor product best suited to the customer?s application; they do not c onvey any license under any intellectual property rights, or any other rights, belonging to mitsubishi electric corporation or a third party. ? mitsubishi electric corporation as sumes no responsibility for any damage, or infringement of any third- party?s rights, originating in the use of any product dat a, diagrams, charts, programs, algorithms, or circuit application examples contained in these materials. ? all information contained in these materials, in cluding product data, diagrams, charts, programs and algorithms represents information on products at the time of publication of these materials, and are subject to change by mitsubishi electric corporation without notice due to product improvements or other reasons. it is therefore recommended that customers contact mi tsubishi electric corporation or an authorized mitsubishi semiconductor product distributor for the la test product information before purchasing a product listed herein. the information described here may contain tech nical in accuracies or typographical errors. mitsubishi electric corporation assume s no responsibility for any damage, li ability, or other loss rising from these inaccuracies or errors. please also pay attention to information published by mitsubishi electric corporation by various means, including the mitsubishi semiconductor home page (http://www.mitsubi shielectric.com/). ? when using any or all of the information contained in these materials, including product data, diagrams, charts, programs, and algorithms, please be sure to evaluate all information as a total system before making a final decision on the applicability of the inform ation and products. mitsubishi electric corporation assumes no responsibility fo r any damage, liability or other loss resulting from the information contained herein. ? mitsubishi electric corporation semiconductors are not designed or manufactured for use in a device or system that is used under circum stances in which human life is potent ially at stake. please contact mitsubishi electric corporation or an authorized mitsubishi semiconductor product distributor when considering the use of a product contained herein for any specific purposes, such as apparatus or systems for transportation, vehicular, medical, ae rospace, nuclear, or undersea repeater use. ? the prior written approval of mitsubishi electric corpor ation is necessary to reprint or reproduce in whole ore in part these materials. ? if these products or technologies are subject to th e japanese export control restrictions, they must be exported under a license from the japanese governm ent and cannot be imported into a country other than the approved destination. any diversion or re-export contrary to the export control laws and regulations of japan and/or the country of destination is prohibited. ? please contact mitsubishi electric corporation or an authorized mitsubishi semiconductor product distributor for further details on these ma terials or the products contained therein.
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