a,dec,2010 to ? 92 1.emitter 2.collector 3.base to-92 plastic-encapsulate transistors KTC3198 transistor (npn) features z general purpose switching application z complementary to kta1266. maximum ratings (t a =25 unless otherwise noted) electrical characteristics (t a =25 unless otherwise specified) parameter symbol test conditions min typ max unit collector-base breakdown voltage v (br)cbo i c = 0.1ma ,i e =0 60 v collector-emitter breakdown voltage v (br) ceo i c =5ma,i b =0 50 v emitter-base breakdown voltage v (br)ebo i e =0.1ma,i c =0 5 v collector cut-off current i cbo v cb =60v,i e =0 0.1 a emitter cut-off current i ebo v eb =5v,i c =0 0.1 a h fe(1) v ce =6v, i c =2ma 70 700 dc current gain h fe(2) v ce =6v, i c =150ma 25 collector-emitter saturation voltage v ce(sat) i c =100ma,i b =10ma 0.25 v base-emitter saturation voltage v be(sat) i c =100ma,i b =10ma 1 v transition frequency f t v ce =10v,i c =1ma 80 mhz collector output capacitance c ob v cb =10v, i e =0, f=1mhz 3.5 pf classification of h fe(1) rank o y gr bl range 70-140 120-240 200-400 300-700 symbo parameter value unit v cbo collector-base voltage 60 v v ceo collector-emitter voltage 50 v v ebo emitter-base voltage 5 v i c collector current 0.15 a p c collector power dissipation 0.625 w r ja thermal resistance from junction to ambient 200 / w t j junction temperature 150 t stg storage temperature -55~+150 tiger electronic co.,ltd
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