document number: 88582 for technical ques tions within your region, please cont act one of the following: www.vishay.com revision: 15-mar-11 diodesamericas@vishay.com , diodesasia@vishay.com , diodeseurope@vishay.com 1 this datasheet is subject to change without notice. the product described here in and this datasheet are subject to specific disclaimers, set forth at www.vishay.com/doc?91000 glass passivated ultrafast rectifier egp10a thru egp10g vishay general semiconductor features ? superectifier structure for high reliability condition ? cavity-free glass- passivated junction ? ultrafast reverse recovery time ? low forward voltage drop ? low leakage current ? low switching losses, high efficiency ? high forward surge capability ? solder dip 275 c max. 10 s, per jesd 22-b106 ? aec-q101 qualified ? compliant to rohs directive 2002/95/ec and in accordance to weee 2002/96/ec typical applications for use in high frequency rectification and freewheeling application in switching mode converters and inverters for consumer, computer and telecommunication. mechanical data case: do-204al, molded epoxy over glass body molding compound meets ul 94 v-0 flammabi lity rating base p/n-e3 - rohs compliant, commercial grade base p/nhe3 - rohs compli ant, aec-q101 qualified terminals: matte tin plated leads, solderable per j-std-002 and jesd 22-b102 e3 suffix meets jesd 201 cla ss 1a whisker test, he3 suffix meets jesd 201 class 2 whisker test polarity: color band denotes cathode end primary characteristics i f(av) 1.0 a v rrm 50 v to 400 v i fsm 30 a t rr 50 ns v f 0.95 v, 1.25 v t j max. 150 c do-204al (do-41) superectifier ? maximum ratings (t a = 25 c unless otherwise noted) parameter symbol egp10a egp10b egp10c egp10d egp10f egp10g unit maximum repetitive pe ak reverse voltage v rrm 50 100 150 200 300 400 v maximum rms voltage v rms 35 70 105 140 210 280 v maximum dc blocking voltage v dc 50 100 150 200 300 400 v maximum average forward rectified current 0.375" (9.5 mm) lead length at t a = 55 c i f(av) 1.0 a peak forward surge current 8.3 ms single half sine-wave superimposed on rated load i fsm 30 a operating junction and storage temperature range t j , t stg - 65 to + 150 c
www.vishay.com for technical qu estions within your region, please contact one of the fo llowing: document number: 88582 2 diodesamericas@vishay.com , diodesasia@vishay.com , diodeseurope@vishay.com revision: 15-mar-11 this datasheet is subject to change without notice. the product described here in and this datasheet are subject to specific disclaimers, set forth at www.vishay.com/doc?91000 egp10a thru egp10g vishay general semiconductor note (1) thermal resistance from junction to ambient, and from junc tion to lead at 0.375" (9.5 mm) lead length, pcb mounted note (1) aec-q101 qualified ratings and characteristics curves (t a = 25 c unless otherwise noted) fig. 1 - maximum forward current de rating curve fig. 2 - maximum non-re petitive peak forward surge current electrical characteristics (t a = 25 c unless otherwise noted) parameter test conditions symbol egp10a egp10b egp10c egp10d egp10f egp10g unit maximum instantaneous forward voltage 1.0 a v f 0.95 1.25 v maximum dc reverse current at rated dc blocking voltage t a = 25 c i r 5.0 a t a = 125 c 100 maximum reverse recovery time i f = 0.5 a, i r = 1.0 a, i rr = 0.25 a t rr 50 ns typical junction capacitance 4.0 v, 1 mhz c j 22 15 pf thermal characteristics (t a = 25 c unless otherwise noted) parameter symbol egp10a egp10b egp10c egp10d egp10f egp10g unit typical thermal resistance r ? ja (1) 50 c/w ordering information (example) preferred p/n unit weight (g) preferred package code ba se quantity delivery mode egp10d-e3/54 0.337 54 5500 13" diam eter paper tape and reel egp10d-e3/73 0.337 73 3000 am mo pack packaging egp10dhe3/54 (1) 0.337 54 5500 13" diameter paper tape and reel egp10dhe3/73 (1) 0.337 73 3000 ammo pack packaging 0 1.0 0 25 50 75 100 125 150 175 average forward rectied current (a) lead temperature (c) 0.5 re s i s tive or inductive load 0.375 " (9.5 mm) lead length 0 5 10 15 20 25 30 1 100 10 peak forward s urge current (a) number of cycle s at 60 hz t j = t j max. 8.3 m s s ingle half s ine-wave
document number: 88582 for technical ques tions within your region, please cont act one of the following: www.vishay.com revision: 15-mar-11 diodesamericas@vishay.com , diodesasia@vishay.com , diodeseurope@vishay.com 3 this datasheet is subject to change without notice. the product described here in and this datasheet are subject to specific disclaimers, set forth at www.vishay.com/doc?91000 egp10a thru egp10g vishay general semiconductor fig. 3 - typical instantaneous forward characteristics fig. 4 - typical reverse leakage characteristics fig. 5 - typical j unction capacitance fig. 6 - typical transient thermal impedance package outline dimensions in inches (millimeters) 0.4 0.2 0.6 0.8 1.0 1.2 1.4 1.6 in s tantaneou s forward voltage (v) 0.01 0.1 10 1 100 in s tantaneou s forward current (a) 1.8 t j = 150 c t j = 25 c pul s e width = 300 s 1 % duty cycle e g p10a thru e g p10d e g p10f and e g p10 g s e voltage (%) in s tantaneou s rever s e leakage current (a) t j = 150 c t j = 25 c t j = 100 c rever s e voltage (v) junction capacitance (pf) 0.1 1 10 100 20 10 30 40 50 60 70 0 t j = 25 c f = 1.0 mhz v s ig = 50 mv p-p e g p10a thru e g p10d e g p10f and e g p10 g s ient thermal impedance (c/w) 0.01 0.1 1 10 100 100 10 1 0.1 t - pul s e duration ( s ) do-204al (do-41) 1.0 (25.4) min. 1.0 (25.4) min. 0.205 (5.2) 0.160 (4.1) 0.107 (2.7) 0.080 (2.0) dia. 0.034 (0.86) 0.028 (0.71) dia. ? lead diameter i s for s ufx e part number s 0.026 (0.66) 0.023 (0.58) note
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