? semiconductor components industries, llc, 2008 august, 2008 ? rev. 2 1 publication order number: NSS20200W6/d NSS20200W6 20 v, 3.0 a, low v ce(sat) pnp transistor on semiconductor?s e 2 poweredge family of low v ce(sat) transistors are miniature surface mount devices featuring ultra low saturation voltage (v ce(sat) ) and high current gain capability. these are designed for use in low voltage, high speed switching applications where affordable efficient energy control is important. typical applications are dc ? dc converters and power management in portable and battery powered products such as cellular and cordless phones, pdas, computers, printers, digital cameras and mp3 players. other applications are low voltage motor controls in mass storage products such as disc drives and tape drives. in the automotive industry they can be used in air bag deployment and in the instrument cluster. the high current gain allows e 2 poweredge devices to be driven directly from pmu?s control outputs, and the linear gain (beta) makes them ideal components in analog amplifiers. ? this is a pb ? free device maximum ratings (t a = 25 c) rating symbol max unit collector-emitter voltage v ceo ? 20 vdc collector-base voltage v cbo ? 20 vdc emitter-base voltage v ebo ? 7.0 vdc collector current ? continuous i c ? 2.0 a collector current ? peak i cm ? 3.0 a thermal characteristics characteristic symbol max unit total device dissipation t a = 25 c derate above 25 c p d (note 1) 426 3.4 mw mw/ c thermal resistance, junction ? to ? ambient r ja (note 1) 293 c/w total device dissipation t a = 25 c derate above 25 c p d (note 2) 555 4.4 mw mw/ c thermal resistance, junction ? to ? ambient r ja (note 2) 225 c/w junction and storage temperature range t j , t stg ? 55 to +150 c stresses exceeding maximum ratings may damage the device. maximum ratings are stress ratings only. functional operation above the recommended operating conditions is not implied. extended exposure to stresses above the recommended operating conditions may affect device reliability. 1. fr ? 4 @ 100 mm 2 , 1 oz. copper traces. 2. fr ? 4 @ 500 mm 2 , 1 oz. copper traces. device package shipping ? ordering information NSS20200W6t1g sc ? 88 (pb ? free) 3000/ tape & reel device marking http://onsemi.com ? 20 volts, 3.0 amps pnp low v ce(sat) transistor equivalent r ds(on) 65 m ?for information on tape and reel specifications, including part orientation and tape sizes, please refer to our tape and reel packaging specification brochure, brd8011/d. collector 1, 2, 5, 6 3 base 4 emitter sc ? 88/sot ? 363 case 419b style 20 1 vc = specific device code m = date code = pb ? free package vc m 1 6
NSS20200W6 http://onsemi.com 2 electrical characteristics (t a = 25 c unless otherwise noted) characteristic symbol min typ max unit off characteristics collector ? emitter breakdown voltage (i c = ? 10 madc, i b = 0) v (br)ceo ? 20 ? ? vdc collector ? base breakdown voltage (i c = ? 0.1 madc, i e = 0) v (br)cbo ? 20 ? ? vdc emitter ? base breakdown voltage (i e = ? 0.1 madc, i c = 0) v (br)ebo ? 7.0 ? ? vdc collector cutoff current (v cb = ? 20 vdc, i e = 0) i cbo ? ? ? 0.1 adc emitter cutoff current (v eb = ? 7.0 vdc) i ebo ? ? ? 0.1 adc on characteristics dc current gain (note 3) (i c = ? 10 ma, v ce = ? 2.0 v) (i c = ? 500 ma, v ce = ? 2.0 v) (i c = ? 1.0 a, v ce = ? 2.0 v) (i c = ? 2.0 a, v ce = ? 2.0 v) h fe 250 220 200 160 370 325 290 245 ? ? ? ? collector ? emitter saturation voltage (note 3) (i c = ? 0.1 a, i b = ? 0.010 a) (note 4) (i c = ? 1.0 a, i b = ? 0.100 a) (i c = ? 1.0 a, i b = ? 0.010 a) (i c = ? 2.0 a, i b = ? 0.200 a) (i c = ? 2.0 a, i b = ? 0.020 a) v ce(sat) ? ? ? ? ? ? 0.010 ? 0.067 ? 0.102 ? 0.128 ? 0.177 ? 0.014 ? 0.092 ? 0.126 ? 0.165 ? 0.215 v base ? emitter saturation voltage (note 3) (i c = ? 1.0 a, i b = ? 0.01 a) v be(sat) ? ? ? 0.900 v base ? emitter turn ? on voltage (note 3) (i c = ? 1.0 a, v ce = ? 2.0 v) v be(on) ? ? ? 0.900 v cutoff frequency (i c = ? 100 ma, v ce = ? 5.0 v, f = 100 mhz) f t 100 ? ? mhz input capacitance (v eb = ? 0.5 v, f = 1.0 mhz) cibo ? ? 330 pf output capacitance (v cb = ? 3.0 v, f = 1.0 mhz) cobo ? ? 90 pf switching characteristics delay (v cc = ? 10 v, i c = 750 ma, i b1 = 15 ma) t d ? ? 65 ns rise (v cc = ? 10 v, i c = 750 ma, i b1 = 15 ma) t r ? ? 100 ns storage (v cc = ? 10 v, i c = 750 ma, i b1 = 15 ma) t s ? ? 320 ns fall (v cc = ? 10 v, i c = 750 ma, i b1 = 15 ma) t f ? ? 125 ns 3. pulsed condition: pulse width = 300 msec, duty cycle 2%. 4. guaranteed by design but not tested.
NSS20200W6 http://onsemi.com 3 typical characteristics figure 1. collector emitter saturation voltage vs. collector current figure 2. collector emitter saturation voltage vs. collector current i c , collector current (a) i c , collector current (a) 10 1 0.1 0.01 0.001 0 0.02 0.04 0.06 0.08 0.12 0.14 0.16 10 1 0.1 0.01 0.001 0.02 0.04 0.06 0.10 0.12 0.14 0.18 0.20 figure 3. dc current gain vs. collector current figure 4. base emitter saturation voltage vs. collector current i c , collector current (a) i c , collector current (a) 10 1 0.1 0.01 0.001 120 200 280 360 440 600 680 720 10 1 0.1 0.01 0.001 0.3 0.4 0.5 0.6 0.7 0.9 1.0 1.1 figure 5. base emitter saturation voltage vs. collector current figure 6. base emitter turn ? on voltage vs. collector current i c , collector current (a) i c , collector current (a) 10 1 0.1 0.01 0.001 0.2 0.3 0.4 0.5 0.7 0.8 0.9 1.0 10 1 0.1 0.01 0.001 0.2 0.3 0.4 0.5 0.7 0.8 0.9 1.0 v ce(sat) , collector ? emitter saturation voltage (v) v ce(sat) , collector ? emitter saturation voltage (v) h fe , dc current gain v be(sat) , base ? emitter saturation voltage (v) v be(sat) , base ? emitter saturation voltage (v) v be(on) , base ? emitter turn on voltage (v) 0.10 i c /i b = 10 ? 55 c 25 c 150 c 0.08 0.16 i c /i b = 100 ? 55 c 25 c 150 c 520 150 c (5.0 v) 150 c (2.0 v) 25 c (5.0 v) 25 c (2.0 v) ? 55 c (5.0 v) ? 55 c (2.0 v) 0.8 i c /i b = 10 ? 55 c 25 c 150 c i c /i b = 100 ? 55 c 25 c 150 c 0.6 ? 55 c 25 c 150 c 0.6 160 240 320 400 560 640 480
NSS20200W6 http://onsemi.com 4 typical characteristics figure 7. saturation region figure 8. input capacitance i b , base current (a) v eb , emitter base voltage (v) 0.1 0.01 0.001 0.0001 0.00001 0 0.1 0.2 0.4 0.5 0.7 0.9 1.0 6 5 4 3 2 1 0 130 150 190 210 250 270 310 330 figure 9. output capacitance v cb , collector base voltage (v) 11 10 9 4 3 2 1 0 50 60 70 90 100 120 130 150 v ce collector ? emitter voltage (v) c ibo , input capacitance (pf) c obo , output capacitance (pf) 0.3 0.6 0.8 10 ma 100 ma 200 ma 500 ma 1 a 2 a 170 230 290 c ibo (pf) 8 7 6 513 12 15 14 80 110 140 c obo (pf) figure 10. safe operating area v ce , collector ? emitter voltage (v) 10 0.1 0.01 0.001 0.1 1 10 i c , collector current (a) 1 100 0.01 single pulse test @ t a = 25 c thermal limit 100 ms 1 s 10 ms 1 ms
NSS20200W6 http://onsemi.com 5 package dimensions notes: 1. dimensioning and tolerancing per ansi y14.5m, 1982. 2. controlling dimension: inch. 3. 419b ? 01 obsolete, new standard 419b ? 02. e 0.2 (0.008) mm 123 d e a1 a a3 c l 654 ? e ? b 6 pl sc ? 88/sc70 ? 6/sot ? 363 case 419b ? 02 issue w dim min nom max millimeters a 0.80 0.95 1.10 a1 0.00 0.05 0.10 a3 b 0.10 0.21 0.30 c 0.10 0.14 0.25 d 1.80 2.00 2.20 0.031 0.037 0.043 0.000 0.002 0.004 0.004 0.008 0.012 0.004 0.005 0.010 0.070 0.078 0.086 min nom max inches 0.20 ref 0.008 ref h e h e e 1.15 1.25 1.35 e 0.65 bsc l 0.10 0.20 0.30 2.00 2.10 2.20 0.045 0.049 0.053 0.026 bsc 0.004 0.008 0.012 0.078 0.082 0.086 mm inches scale 20:1 0.65 0.025 0.65 0.025 0.50 0.0197 0.40 0.0157 1.9 0.0748 *for additional information on our pb ? free strategy and soldering details, please download the on semiconductor soldering and mounting techniques reference manual, solderrm/d. soldering footprint* style 20: pin 1. collector 2. collector 3. base 4. emitter 5. collector 6. collector on semiconductor and are registered trademarks of semiconductor components industries, llc (scillc). scillc reserves the right to mak e changes without further notice to any products herein. scillc makes no warranty, representation or guarantee regarding the suitability of its products for an y particular purpose, nor does scillc assume any liability arising out of the application or use of any product or circuit, and specifically disclaims any and all liability, including wi thout limitation special, consequential or incidental damages. ?typical? parameters which may be provided in scillc data sheets and/or specifications can and do vary in different application s and actual performance may vary over time. all operating parameters, including ?typicals? must be validated for each customer application by customer?s technical experts. scillc does not convey any license under its patent rights nor the rights of others. scillc products are not designed, intended, or authorized for use as components in systems intended for surgical implant into the body, or other applications intended to support or sustain life, or for any other application in which the failure of the scillc product could create a sit uation where personal injury or death may occur. should buyer purchase or use scillc products for any such unintended or unauthorized application, buyer shall indemnify and hold scillc and its of ficers, employees, subsidiaries, af filiates, and distributors harmless against all claims, costs, damages, and expenses, and reasonable attorney fees arising out of, direct ly or indirectly, any claim of personal injury or death associated with such unintended or unauthorized use, even if such claim alleges that scillc was negligent regarding the design or manufacture of the part. scillc is an equal opportunity/affirmative action employer. this literature is subject to all applicable copyright laws and is not for resale in any manner. publication ordering information n. american technical support : 800 ? 282 ? 9855 toll free usa/canada europe, middle east and africa technical support: phone: 421 33 790 2910 japan customer focus center phone: 81 ? 3 ? 5773 ? 3850 NSS20200W6/d literature fulfillment : literature distribution center for on semiconductor p.o. box 5163, denver, colorado 80217 usa phone : 303 ? 675 ? 2175 or 800 ? 344 ? 3860 toll free usa/canada fax : 303 ? 675 ? 2176 or 800 ? 344 ? 3867 toll free usa/canada email : orderlit@onsemi.com on semiconductor website : www.onsemi.com order literature : http://www.onsemi.com/orderlit for additional information, please contact your local sales representative
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