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? semiconductor components industries, llc, 2012 august, 2012 ? rev. 0 1 publication order number: dtc143z/d mun2233, mmun2233l, mun5233, dtc143ze, dtc143zm3, nsbc143zf3 digital transistors (brt) r1 = 4.7 k , r2 = 47 k npn transistors with monolithic bias resistor network this series of digital transistors is designed to replace a single device and its external resistor bias network. the bias resistor transistor (brt) contains a single transistor with a monolithic bias network consisting of two resistors; a series base resistor and a base ? emitter resistor. the brt eliminates these individual components by integrating them into a single device. the use of a brt can reduce both system cost and board space. features ? simplifies circuit design ? reduces board space ? reduces component count ? s and nsv prefix for automotive and other applications requiring unique site and control change requirements; aec ? q101 qualified and ppap capable ? these devices are pb ? free, halogen free/bfr free and are rohs compliant maximum ratings (t a = 25 c) rating symbol max unit collector ? base voltage v cbo 50 vdc collector ? emitter voltage v ceo 50 vdc collector current ? continuous i c 100 madc input forward voltage v in(fwd) 30 vdc input reverse voltage v in(rev) 5 vdc stresses exceeding maximum ratings may damage the device. maximum ratings are stress ratings only. functional operation above the recommended operating conditions is not implied. extended exposure to stresses above the recommended operating conditions may affect device reliability. pin 3 collector (output) pin 2 emitter (ground) pin 1 base (input) r1 r2 see detailed ordering, marking, and shipping information in the package dimensions section on page 2 of this data sheet. ordering information http://onsemi.com sc ? 75 case 463 style 1 marking diagrams xxx = specific device code m = date code* =pb ? free package (note: microdot may be in either location) *date code orientation may vary depending upon manufacturing location. sc ? 59 case 318d style 1 sot ? 23 case 318 style 6 sc ? 70/sot ? 323 case 419 style 3 sot ? 723 case 631aa style 1 sot ? 1123 case 524aa style 1 xx m 1 1 xxx m xx m 1 xx m 1 x m xx m 1 1 pin connections
mun2233, mmun2233l, mun5233, dtc143ze, dtc143zm3, nsbc143zf3 http://onsemi.com 2 table 1. ordering information device part marking package shipping ? mun2233t1g, nsvmun2233t1g 8k sc ? 59 (pb ? free) 3,000 / tape & reel mmun2233lt1g, SMMUN2233LT1G a8k sot ? 23 (pb ? free) 3,000 / tape & reel mun5233t1g, smun5233t1g 8k sc ? 70/sot ? 323 (pb ? free) 3,000 / tape & reel dtc143zet1g 8k sc ? 75 (pb ? free) 3,000 / tape & reel dtc143zm3t5g 8k sot ? 723 (pb ? free) 8,000 / tape & reel nsbc143zf3t5g r sot ? 1123 (pb ? free) 8,000 / tape & reel ?for information on tape and reel specifications, including part orientation and tape sizes, please refer to our tape and reel packaging specifications brochure, brd8011/d. figure 1. derating curve ambient temperature ( c) 125 100 75 50 25 0 ? 25 ? 50 0 50 100 150 200 250 300 p d , power dissipation (mw) 150 (1) (2) (3) (4) (5) (1) sc ? 75 and sc ? 70/sot ? 323; minimum pad (2) sc ? 59; minimum pad (3) sot ? 23; minimum pad (4) sot ? 1123; 100 mm 2 , 1 oz. copper trace (5) sot ? 723; minimum pad
mun2233, mmun2233l, mun5233, dtc143ze, dtc143zm3, nsbc143zf3 http://onsemi.com 3 table 2. thermal characteristics characteristic symbol max unit thermal characteristics (sc ? 59) (mun2233) total device dissipation t a = 25 c (note 1) (note 2) derate above 25 c (note 1) (note 2) p d 230 338 1.8 2.7 mw mw/ c thermal resistance, (note 1) junction to ambient (note 2) r ja 540 370 c/w thermal resistance, (note 1) junction to lead (note 2) r jl 264 287 c/w junction and storage temperature range t j , t stg ? 55 to +150 c thermal characteristics (sot ? 23) (munn2233l) total device dissipation t a = 25 c (note 1) (note 2) derate above 25 c (note 1) (note 2) p d 246 400 2.0 3.2 mw mw/ c thermal resistance, (note 1) junction to ambient (note 2) r ja 508 311 c/w thermal resistance, (note 1) junction to lead (note 2) r jl 174 208 c/w junction and storage temperature range t j , t stg ? 55 to +150 c thermal characteristics (sc ? 70/sot ? 323) (mun5233) total device dissipation t a = 25 c (note 1) (note 2) derate above 25 c (note 1) (note 2) p d 202 310 1.6 2.5 mw mw/ c thermal resistance, (note 1) junction to ambient (note 2) r ja 618 403 c/w thermal resistance, (note 1) junction to lead (note 2) r jl 280 332 c/w junction and storage temperature range t j , t stg ? 55 to +150 c thermal characteristics (sc ? 75) (dtc143ze) total device dissipation t a = 25 c (note 1) (note 2) derate above 25 c (note 1) (note 2) p d 200 300 1.6 2.4 mw mw/ c thermal resistance, (note 1) junction to ambient (note 2) r ja 600 400 c/w junction and storage temperature range t j , t stg ? 55 to +150 c thermal characteristics (sot ? 723) (dtc143zm3) total device dissipation t a = 25 c (note 1) (note 2) derate above 25 c (note 1) (note 2) p d 260 600 2.0 4.8 mw mw/ c thermal resistance, (note 1) junction to ambient (note 2) r ja 480 205 c/w junction and storage temperature range t j , t stg ? 55 to +150 c 1. fr ? 4 @ minimum pad. 2. fr ? 4 @ 1.0 x 1.0 inch pad. 3. fr 4 @ 100 mm 2 , 1 oz. copper traces, still air. 4. fr 4 @ 500 mm 2 , 1 oz. copper traces, still air.
mun2233, mmun2233l, mun5233, dtc143ze, dtc143zm3, nsbc143zf3 http://onsemi.com 4 table 2. thermal characteristics characteristic unit max symbol thermal characteristics (sot ? 1123) (nsbc143zf3) total device dissipation t a = 25 c (note 3) (note 4) derate above 25 c (note 3) (note 4) p d 254 297 2.0 2.4 mw mw/ c thermal resistance, (note 3) junction to ambient (note 4) r ja 493 421 c/w thermal resistance, junction to lead (note 3) r jl 193 c/w junction and storage temperature range t j , t stg ? 55 to +150 c 1. fr ? 4 @ minimum pad. 2. fr ? 4 @ 1.0 x 1.0 inch pad. 3. fr 4 @ 100 mm 2 , 1 oz. copper traces, still air. 4. fr 4 @ 500 mm 2 , 1 oz. copper traces, still air. table 3. electrical characteristics (t a = 25 c, unless otherwise noted) characteristic symbol min typ max unit off characteristics collector ? base cutoff current (v cb = 50 v, i e = 0) i cbo ? ? 100 nadc collector ? emitter cutoff current (v ce = 50 v, i b = 0) i ceo ? ? 500 nadc emitter ? base cutoff current (v eb = 6.0 v, i c = 0) i ebo ? ? 0.18 madc collector ? base breakdown voltage (i c = 10 a, i e = 0) v (br)cbo 50 ? ? vdc collector ? emitter breakdown voltage (note 5) (i c = 2.0 ma, i b = 0) v (br)ceo 50 ? ? vdc on characteristics dc current gain (note 5) (i c = 5.0 ma, v ce = 10 v) h fe 80 200 ? collector emitter saturation voltage (note 5) (i c = 10 ma, i b = 1.0 ma) v ce(sat) ? ? 0.25 vdc input voltage (off) (v ce = 5.0 v, i c = 100 a) v i(off) ? 0.6 ? vdc input voltage (on) (v ce = 0.2 v, i c = 5 ma) v i(on) ? 0.9 ? vdc output voltage (on) (v cc = 5.0 v, v b = 2.5 v, r l = 1.0 k ) v ol ? ? 0.2 vdc output voltage (off) (v cc = 5.0 v, v b = 0.5 v, r l = 1.0 k ) v oh 4.9 ? ? vdc input resistor r1 3.3 4.7 6.1 k resistor ratio r 1 /r 2 0.055 0.1 0.185 5. pulsed condition: pulse width = 300 msec, duty cycle 2%.
mun2233, mmun2233l, mun5233, dtc143ze, dtc143zm3, nsbc143zf3 http://onsemi.com 5 typical characteristics mun2233, mmun2233l, mun5233, dtc143ze, dtc143zm3 ? 55 c 150 c figure 2. v ce(sat) versus i c figure 3. dc current gain figure 4. output capacitance figure 5. output current versus input voltage v in , input voltage (v) v r , reverse bias voltage (v) figure 6. input voltage versus output current i c , collector current (ma) i c , collector current (ma) i c , collector current (ma) v ce(sat) , collector ? emitter saturation voltage (v) h fe , dc current gain 50 40 30 20 10 0 c ob , capacitance (pf) i c , collector current (ma) v in , input voltage (v) f = 10 khz i e = 0 a t a = 25 c v o = 5 v v o = 0.2 v i c /i b = 10 v ce = 10 v 25 c 1 0.1 0.01 1 10 100 1000 1 10 100 ? 55 c 150 c 25 c 3.2 25 c ? 55 c 150 c 01 4 23 100 10 1 0.1 0.01 0.001 25 c ? 55 c 150 c 10 1 0.1 50 40 30 20 10 0 100 10 2.8 2.4 2 1.6 1.2 0.8 0.4 0
mun2233, mmun2233l, mun5233, dtc143ze, dtc143zm3, nsbc143zf3 http://onsemi.com 6 typical characteristics nsbc143zf3 ? 55 c 150 c figure 7. v ce(sat) versus i c figure 8. dc current gain figure 9. output capacitance figure 10. output current versus input voltage v in , input voltage (v) v r , reverse bias voltage (v) figure 11. input voltage versus output current i c , collector current (ma) i c , collector current (ma) i c , collector current (ma) v ce(sat) , collector ? emitter saturation voltage (v) h fe , dc current gain 50 40 30 20 10 0 c ob , capacitance (pf) i c , collector current (ma) v in , input voltage (v) v o = 5 v v o = 0.2 v i c /i b = 10 v ce = 10 v 25 c 1 0.1 0.01 110 50 1000 1 10 100 ? 55 c 150 c 25 c 2.4 25 c ? 55 c 150 c 01 4 23 100 10 1 0.1 0.01 0.001 25 c ? 55 c 150 c 100 50 40 30 20 10 0 40 30 20 100 10 1 0.1 2 1.6 1.2 0.8 0.4 0 10 1 0.1 f = 10 khz i e = 0 a t a = 25 c
mun2233, mmun2233l, mun5233, dtc143ze, dtc143zm3, nsbc143zf3 http://onsemi.com 7 package dimensions sc ? 59 case 318d ? 04 issue h style 1: pin 1. base 2. emitter 3. collector e a1 b a e d 2 3 1 c l notes: 1. dimensioning and tolerancing per ansi y14.5m, 1982. 2. controlling dimension: millimeter. 2.4 0.094 0.95 0.037 0.95 0.037 1.0 0.039 0.8 0.031 mm inches scale 10:1 *for additional information on our pb ? free strategy and soldering details, please download the on semiconductor soldering and mounting techniques reference manual, solderrm/d. soldering footprint* h e dim a min nom max min millimeters 1.00 1.15 1.30 0.039 inches a1 0.01 0.06 0.10 0.001 b 0.35 0.43 0.50 0.014 c 0.09 0.14 0.18 0.003 d 2.70 2.90 3.10 0.106 e 1.30 1.50 1.70 0.051 e 1.70 1.90 2.10 0.067 l 0.20 0.40 0.60 0.008 2.50 2.80 3.00 0.099 0.045 0.051 0.002 0.004 0.017 0.020 0.005 0.007 0.114 0.122 0.059 0.067 0.075 0.083 0.016 0.024 0.110 0.118 nom max h e
mun2233, mmun2233l, mun5233, dtc143ze, dtc143zm3, nsbc143zf3 http://onsemi.com 8 package dimensions sot ? 23 (to ? 236) case 318 ? 08 issue ap d a1 3 12 notes: 1. dimensioning and tolerancing per ansi y14.5m, 1982. 2. controlling dimension: inch. 3. maximum lead thickness includes lead finish thickness. minimum lead thickness is the minimum thickness of base material. 4. dimensions d and e do not include mold flash, protrusions, or gate burrs. mm inches scale 10:1 0.8 0.031 0.9 0.035 0.95 0.037 0.95 0.037 2.0 0.079 soldering footprint* view c l 0.25 l1 e e e b a see view c dim a min nom max min millimeters 0.89 1.00 1.11 0.035 inches a1 0.01 0.06 0.10 0.001 b 0.37 0.44 0.50 0.015 c 0.09 0.13 0.18 0.003 d 2.80 2.90 3.04 0.110 e 1.20 1.30 1.40 0.047 e 1.78 1.90 2.04 0.070 l 0.10 0.20 0.30 0.004 0.040 0.044 0.002 0.004 0.018 0.020 0.005 0.007 0.114 0.120 0.051 0.055 0.075 0.081 0.008 0.012 nom max l1 h style 6: pin 1. base 2. emitter 3. collector 2.10 2.40 2.64 0.083 0.094 0.104 h e 0.35 0.54 0.69 0.014 0.021 0.029 c 0 ??? 10 0 ??? 10 *for additional information on our pb ? free strategy and soldering details, please download the on semiconductor soldering and mounting techniques reference manual, solderrm/d.
mun2233, mmun2233l, mun5233, dtc143ze, dtc143zm3, nsbc143zf3 http://onsemi.com 9 package dimensions sc ? 70 (sot ? 323) case 419 ? 04 issue n style 3: pin 1. base 2. emitter 3. collector a a2 d e1 b e e a1 c l 3 12 notes: 1. dimensioning and tolerancing per ansi y14.5m, 1982. 2. controlling dimension: inch. 0.05 (0.002) 1.9 0.075 0.65 0.025 0.65 0.025 0.9 0.035 0.7 0.028 mm inches scale 10:1 *for additional information on our pb ? free strategy and soldering details, please download the on semiconductor soldering and mounting techniques reference manual, solderrm/d. soldering footprint* h e dim a min nom max min millimeters 0.80 0.90 1.00 0.032 inches a1 0.00 0.05 0.10 0.000 a2 0.70 ref b 0.30 0.35 0.40 0.012 c 0.10 0.18 0.25 0.004 d 1.80 2.10 2.20 0.071 e 1.15 1.24 1.35 0.045 e 1.20 1.30 1.40 0.047 0.035 0.040 0.002 0.004 0.014 0.016 0.007 0.010 0.083 0.087 0.049 0.053 0.051 0.055 nom max l 2.00 2.10 2.40 0.079 0.083 0.095 h e e1 0.65 bsc 0.38 0.028 ref 0.026 bsc 0.015 0.20 0.56 0.008 0.022
mun2233, mmun2233l, mun5233, dtc143ze, dtc143zm3, nsbc143zf3 http://onsemi.com 10 package dimensions sc ? 75/sot ? 416 case 463 issue f style 1: pin 1. base 2. emitter 3. collector notes: 1. dimensioning and tolerancing per ansi y14.5m, 1982. 2. controlling dimension: millimeter. m 0.20 (0.008) d ? e ? ? d ? b e 3 pl 0.20 (0.008) e c l a a1 3 2 1 h e dim min nom max millimeters a 0.70 0.80 0.90 a1 0.00 0.05 0.10 b c 0.10 0.15 0.25 d 1.55 1.60 1.65 e e 1.00 bsc 0.027 0.031 0.035 0.000 0.002 0.004 0.004 0.006 0.010 0.059 0.063 0.067 0.04 bsc min nom max inches 0.15 0.20 0.30 0.006 0.008 0.012 h e l 0.10 0.15 0.20 1.50 1.60 1.70 0.004 0.006 0.008 0.061 0.063 0.065 0.70 0.80 0.90 0.027 0.031 0.035 0.787 0.031 0.508 0.020 1.000 0.039 mm inches scale 10:1 0.356 0.014 *for additional information on our pb ? free strategy and soldering details, please download the on semiconductor soldering and mounting techniques reference manual, solderrm/d. soldering footprint* 1.803 0.071
mun2233, mmun2233l, mun5233, dtc143ze, dtc143zm3, nsbc143zf3 http://onsemi.com 11 package dimensions sot ? 723 case 631aa issue d dim min nom max millimeters a 0.45 0.50 0.55 b 0.15 0.21 0.27 b1 0.25 0.31 0.37 c 0.07 0.12 0.17 d 1.15 1.20 1.25 e 0.75 0.80 0.85 e 0.40 bsc h 1.15 1.20 1.25 l e notes: 1. dimensioning and tolerancing per asme y14.5m, 1994. 2. controlling dimension: millimeters. 3. maximum lead thickness includes lead finish. minimum lead thickness is the minimum thickness of base material. 4. dimensions d and e do not include mold flash, protrusions or gate burrs. d b1 e b e a l c h ? y ? ? x ? x 0.08 y 2x e 1 2 3 style 1: pin 1. base 2. emitter 3. collector *for additional information on our pb ? free strategy and soldering details, please download the on semiconductor soldering and mounting techniques reference manual, solderrm/d. soldering footprint* l2 0.15 0.20 0.25 0.29 ref 3x l2 3x 1 2x top view bottom view side view recommended dimensions: millimeters 0.40 1.50 2x package outline 0.27 2x 0.52 3x 0.36
mun2233, mmun2233l, mun5233, dtc143ze, dtc143zm3, nsbc143zf3 http://onsemi.com 12 package dimensions sot ? 1123 case 524aa issue c notes: 1. dimensioning and tolerancing per asme y14.5m, 1994. 2. controlling dimension: millimeters. 3. maximum lead thickness includes lead finish. minimum lead thickness is the minimum thickness of base material. 4. dimensions d and e do not include mold flash, protrusions, or gate burrs. dim min max millimeters a 0.34 0.40 b 0.15 0.28 c 0.07 0.17 d 0.75 0.85 e 0.55 0.65 0.95 1.05 l 0.185 ref h e d e c a ? y ? ? x ? h e *for additional information on our pb ? free strategy and soldering details, please download the on semiconductor soldering and mounting techniques reference manual, solderrm/d. soldering footprint* e b1 0.10 0.20 style 1: pin 1. base 2. emitter 3. collector 1 2 3 0.35 0.40 top view side view 3x bottom view l2 l 3x dimensions: millimeters 1.20 2x 0.26 3x 0.34 package outline b 2x b1 e 0.08 xy l2 0.05 0.15 0.20 0.38 1 on semiconductor and are registered trademarks of semiconductor co mponents industries, llc (scillc). scillc owns the rights to a numb er of patents, trademarks, copyrights, trade secrets, and other intellectual property. a list ing of scillc?s product/patent coverage may be accessed at ww w.onsemi.com/site/pdf/patent ? marking.pdf. scillc reserves the right to make changes without further notice to any products herein. scillc makes no warranty, representation or guarantee regarding the suitability of its products for any particular purpose, nor does scillc assume any liability arising out of the application or use of any product or circuit, and s pecifically disclaims any and all liability, including without limitation special, consequential or incidental damages. ?typical? parameters which may be provided in scillc data sheets and/ or specifications can and do vary in different applications and actual performance may vary over time. all operating parame ters, including ?typicals? must be validated for each customer application by customer?s technical experts. scillc does not convey any license under its patent rights nor the right s of others. scillc products are not designed, intended, or a uthorized for use as components in systems intended for surgical implant into the body, or other applications intended to support or sustain life, or for any other application in whic h the failure of the scillc product could create a situation where personal injury or death may occur. should buyer purchase or us e scillc products for any such unintended or unauthorized appli cation, buyer shall indemnify and hold scillc and its officers, employees, subsidiaries, affiliates, and distributors harmless against all claims, costs, damages, and expenses, and reasonable attorney fees arising out of, directly or indirectly, any claim of personal injury or death associated with such unin tended or unauthorized use, even if such claim alleges that scil lc was negligent regarding the design or manufacture of the part. scillc is an equal opportunity/affirmative action employer. this literature is subject to all applicable copyrig ht laws and is not for resale in any manner. publication ordering information n. american technical support : 800 ? 282 ? 9855 toll free usa/canada europe, middle east and africa technical support: phone: 421 33 790 2910 japan customer focus center phone: 81 ? 3 ? 5817 ? 1050 dtc143z/d literature fulfillment : literature distribution center for on semiconductor p.o. box 5163, denver, colorado 80217 usa phone : 303 ? 675 ? 2175 or 800 ? 344 ? 3860 toll free usa/canada fax : 303 ? 675 ? 2176 or 800 ? 344 ? 3867 toll free usa/canada email : orderlit@onsemi.com on semiconductor website : www.onsemi.com order literature : http://www.onsemi.com/orderlit for additional information, please contact your local sales representative

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