2012-06-12 rev.4.0 CUS10F30 1 schottky barrier diode silicon epitaxial CUS10F30 CUS10F30 CUS10F30 CUS10F30 1. 1. 1. 1. applications applications applications applications ? high-speed switching 2. 2. 2. 2. features features features features (1) low forward voltage: v f(3) = 0.43 v (typ.) (2) general-purpose usc package, equivalent to sod-323 and sc-76 packages. 3. 3. 3. 3. packaging and internal circuit packaging and internal circuit packaging and internal circuit packaging and internal circuit 1: cathode 2: anode 4. 4. 4. 4. absolute maximum ratings (note) (unless otherwise specified, t absolute maximum ratings (note) (unless otherwise specified, t absolute maximum ratings (note) (unless otherwise specified, t absolute maximum ratings (note) (unless otherwise specified, t a a a a = 25 = 25 = 25 = 25 ) ) ) ) characteristics reverse voltage average rectified current non-repetitive peak forward surge current junction temperature storage temperature symbol v r i o i fsm t j t stg note (note 1) (note 2) rating 30 1 5 125 -55 to 125 unit v a note: using continuously under heavy loads (e.g. the application of high temperature/current/voltage and the significant change in temperature, etc.) may cause this product to decrease in the reliability significantly even if the operating conditions (i.e. operating temperature/current/voltage, etc.) are within the absolute maximum ratings. please design the appropriate reliability upon reviewing the toshiba semiconductor reliability handbook ("handling precautions"/"derating concept and methods") and individual reliability data (i.e. reliability test report and estimated failure rate, etc). note 1: mounted on a ceramic circuit board of 25 mm 25 mm, pad dimension of 2 mm 2 mm. note 2: measured with a 10 ms pulse. usc
2012-06-12 rev.4.0 CUS10F30 2 5. 5. 5. 5. electrical characteristics (unless otherwise specified, t electrical characteristics (unless otherwise specified, t electrical characteristics (unless otherwise specified, t electrical characteristics (unless otherwise specified, t a a a a = 25 = 25 = 25 = 25 ) ) ) ) characteristics forward voltage reverse current total capacitance symbol v f (1) v f (2) v f (3) i r (1) c t note test condition i f = 10 ma i f = 100 ma i f = 1 a v r = 30 v v r = 0 v, f = 1 mhz min typ. 0.22 0.28 0.43 170 max 0.5 50 unit v a pf 6. 6. 6. 6. marking marking marking marking fig. fig. fig. fig. 6.1 6.1 6.1 6.1 marking marking marking marking marking code fr part number CUS10F30 7. 7. 7. 7. usage considerations usage considerations usage considerations usage considerations ? schottky barrier diodes (sbds) have reverse leakage greater than other types of diodes. this makes sbds more susceptible to thermal runaway under high-temperature and high-voltage conditions. thus, both forward and reverse power losses of sbds should be considered for thermal and safety design. 8. 8. 8. 8. land pattern dimensions for reference only land pattern dimensions for reference only land pattern dimensions for reference only land pattern dimensions for reference only fig. fig. fig. fig. 8.1 8.1 8.1 8.1 land pattern dimensions for reference only (unit: mm) land pattern dimensions for reference only (unit: mm) land pattern dimensions for reference only (unit: mm) land pattern dimensions for reference only (unit: mm)
2012-06-12 rev.4.0 CUS10F30 3 9. 9. 9. 9. characteristics curves (note) characteristics curves (note) characteristics curves (note) characteristics curves (note) fig. fig. fig. fig. 9.1 9.1 9.1 9.1 i i i i f f f f - v - v - v - v f f f f fig. fig. fig. fig. 9.2 9.2 9.2 9.2 i i i i r r r r - v - v - v - v r r r r fig. fig. fig. fig. 9.3 9.3 9.3 9.3 c c c c t t t t - v - v - v - v r r r r note: the above characteristics curves are presented for reference only and not guaranteed by production test.
2012-06-12 rev.4.0 CUS10F30 4 package dimensions package dimensions package dimensions package dimensions unit: mm weight: 4.5 mg (typ.) package name(s) nickname: usc
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