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| semitop ? 4 igbt module SK100GD12T4T target data features ! " # " $ % & ' ( ) * + , - ( . / 0 + typical applications* remarks 1 + " " 1 2 % % gd-t absolute maximum ratings 2 # 3 4 + " & symbol conditions values units igbt 1 + 5 2 # 3 4 + ! # 7 7 1 + 5 2 ! 8 3 4 + 2 # 3 4 + ! # 9 , 2 8 7 4 + ! 7 7 , + : + : 2 $ ' + $ 7 7 , 1 ) ; # 7 1 1 + + 2 < 7 7 1 = 1 ) > ! 3 1 = 1 + ? ! # 7 7 1 5 2 ! 3 7 4 + ! 7 @ inverse diode 5 2 ! 8 3 4 + 2 # 3 4 + ! 7 # , 2 8 7 4 + < ! , : : 2 $ ' $ 7 7 , 2 ! 7 = & % 5 2 ! 3 7 4 + 3 ( < , module a : b , % 5 c ( 7 d d d e ! 8 3 4 + c ( 7 d d d e ! # 3 4 + 1 , + " ! d # 3 7 7 1 characteristics 2 # 3 4 + " & symbol conditions min. typ. max. units igbt 1 ) a b 1 ) 2 1 + " + 2 $ " ( , 3 3 " < 9 " 3 1 + 1 ) 2 7 1 " 1 + 2 1 + 5 2 # 3 4 + 7 " 7 # , 5 2 ! # 3 4 + , ) 1 + 2 7 1 " 1 ) 2 # 7 1 5 2 # 3 4 + ! # 7 7 , 5 2 ! # 3 4 + , 1 + 7 5 2 # 3 4 + ! " ! ! " $ 1 5 2 ! 3 7 4 + ! ! " # 1 + 1 ) 2 ! 3 1 5 2 # 3 4 + 8 " 3 f 5 2 ! 3 7 4 + ! # " 3 f 1 + a b + 2 ! 7 7 , " 1 ) 2 ! 3 1 5 2 # 3 4 + % d ! " < 3 # " 7 3 1 5 2 ! 3 7 4 + % d # " # 3 # " ( 3 1 + 3 " 3 ( + 1 + 2 # 3 " 1 ) 2 7 1 & 2 ! g h 7 " ( ! + 7 " $ # i ) 1 ) 2 c 8 1 d d e ! 3 1 8 3 7 + : ) 5 2 # 3 4 + # j a b 9 $ : ) 2 ! 9 f 1 + + 2 9 7 7 1 9 3 k 2 ! < 7 7 , k @ + 2 ! 7 7 , ! 9 " 9 l a & & b : ) & & 2 ! 9 f 5 2 ! 3 7 4 + 3 # ! & k 2 ! < 7 7 , k @ 1 ) 2 ; ! 3 1 < 7 & & ! 7 l : a 5 c b ) * 7 " ( $ m k . SK100GD12T4T 1 27-04-2009 dil ? by semikron semitop ? 4 igbt module SK100GD12T4T target data features ! " # " $ % & ' ( ) * + , - ( . / 0 + typical applications* remarks 1 + " " 1 2 % % gd-t characteristics symbol conditions min. typ. max. units inverse diode 1 2 1 + 2 ! 7 7 , = 1 ) 2 7 1 5 2 # 3 4 + % d # " # 3 # " 3 3 1 5 2 ! 3 7 4 + % d # " # # " 3 1 1 7 5 2 # 3 4 + ! " $ ! " 3 1 5 2 ! 3 7 4 + 7 " n ! " ! 1 5 2 # 3 4 + n " 3 ! 7 " 3 f 5 2 ! 3 7 4 + ! $ ! ( f : : 2 ! 7 7 , 5 2 ! 3 7 4 + 3 # , i k 2 ! < 7 7 , k @ ! ( @ + 1 + + 2 9 7 7 1 3 " # l : a 5 c b / 7 " 9 # m k . o # " 3 # " 8 3 0 9 7 temperature sensor : ! 7 7 2 ! 7 7 4 + a : # 3 2 3 o f b ( n $ ; 3 p f this is an electrostatic discharge sensitive device (esds), international standard iec 60747-1, chapter ix. * the specifications of our components may not be considered as an assurance of component characteristics. components have to be tested for the respective application. adjustments may be necessary. the use of semikron products in life support appliances and systems is subject to prior specification and written approval by semikron. we therefore strongly recommend prior consultation of our personal. SK100GD12T4T 2 27-04-2009 dil ? by semikron fig. 1 typ. output characteristic, inclusive r cc'+ ee' fig. 2 rated current vs. temperature i c = f (t s ) fig. 3 typ. turn-on /-off energy = f (i c ) fig. 4 typ. turn-on /-off energy = f (r g ) fig. 6 typ. gate charge characteristic SK100GD12T4T 3 27-04-2009 dil ? by semikron fig. 7 typ. switching times vs. i c fig. 8 typ. switching times vs. gate resistor r g fig. 10 cal diode forward characteristic SK100GD12T4T 4 27-04-2009 dil ? by semikron + 8 ( a & q # d & q $ " 9 b + 8 ( ) / c SK100GD12T4T 5 27-04-2009 dil ? by semikron |
Price & Availability of SK100GD12T4T
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