? 2006 ixys all rights reserved symbol test conditions maximum ratings v dss t j = 25 c to 150 c 500 v v dgr t j = 25 c to 150 c; r gs = 1 m ? 500 v v gs continuous 30 v v gsm transient 40 v i d25 t c = 25 c15a i dm t c = 25 c, pulse width limited by t jm 78 a i ar t c = 25 c26a e ar t c = 25 c40mj e as t c = 25 c 1.0 j dv/dt i s i dm , di/dt 100 a/ s, v dd v dss , 20 v/ns t j 150 c, r g = 4 ? p d t c = 25 c 130 w t j -55 ... +150 c t jm 150 c t stg -55 ... +150 c t l 1.6 mm (0.062 in.) from case for 10 s 300 c v isol 50/60 hz, rms, t = 1, leads-to-tab 2500 v~ f c mounting force 11..65/2.5..15 n/lb weight 2g g = gate d = drain s = source ds99310e(03/06) symbol test conditions characteristic values (t j = 25 c, unless otherwise specified) min. typ. max. bv dss v gs = 0 v, i d = 250 a 500 v v gs(th) v ds = v gs , i d = 4 ma 3.0 5.5 v i gss v gs = 30 v dc , v ds = 0 100 na i dss v ds = v dss 25 a v gs = 0 v t j = 125 c 250 a r ds(on) v gs = 10 v, i d = i t 260 m ? pulse test, t 300 s, duty cycle d 2 % v dss = 500 v i d25 =15 a r ds(on) 260 m ? ? ? ? ? trr 250 ns n-channel enhancement mode avalanche rated fast intrinsic diode isoplus220 tm (ixfc) e153432 g d s (isolated tab) features l silicon chip on direct-copper-bond substrate - high power dissipation - isolated mounting surface - 2500v electrical isolation l low drain to tab capacitance(<30pf) applications l dc-dc converters l battery chargers l switched-mode and resonant-mode power supplies l dc choppers l ac motor control advantages l easy assembly l space savings l high power density ixfc 26n50p polarhv tm hiperfet power mosfet isoplus 220 tm (electrically isolated tab)
ixys reserves the right to change limits, test conditions, and dimensions. ixfc 26n50p symbol test conditions characteristic values (t j = 25 c, unless otherwise specified) min. typ. max. g fs v ds = 10 v; i d = i t , pulse test 18 28 s c iss 3600 pf c oss v gs = 0 v, v ds = 25 v, f = 1 mhz 380 pf c rss 48 pf t d(on) 20 ns t r v gs = 10 v, v ds = 0.5 v dss , i d = i t 25 ns t d(off) r g = 4 ? (external) 58 ns t f 20 ns q g(on) 65 nc q gs v gs = 10 v, v ds = 0.5 v dss , i d = i t 20 nc q gd 20 nc r thjc 0.95 c/w r thcs 0.21 c/w source-drain diode characteristic values (t j = 25 c, unless otherwise specified) symbol test conditions min. typ. max. i s v gs = 0 v 26 a i sm repetitive 78 a v sd i f = i s , v gs = 0 v, 1.5 v pulse test, t 300 s, duty cycle d 2 % t rr i f = 25 a 250 ns -di/dt = 100 a/ s q rm v r = 100 v, v gs = 0 v 0.3 c note: test current i t = 13a isoplus220 outline ixys mosfets and igbts are covered by 4,835,592 4,931,844 5,049,961 5,237,481 6,162,665 6,404,065 b1 6,683,344 6,727,585 one or moreof the following u.s. patents: 4,850,072 5,017,508 5,063,307 5,381,025 6,259,123 b1 6,534,343 6,710,405b2 6,759,692 4,881,106 5,034,796 5,187,117 5,486,715 6,306,728 b1 6,583,505 6,710,463 6,771,478 b2
? 2006 ixys all rights reserved ixfc 26n50p fig. 1. output characteristics @ 25oc 0 2 4 6 8 10 12 14 16 18 20 22 24 26 01234567 v ds - volts i d - amperes v gs = 10v 8v 7v 6v 5v fig. 2. extended output characteristics @ 25oc 0 5 10 15 20 25 30 35 40 45 50 55 60 0 3 6 9 12 15 18 21 24 27 30 v ds - volts i d - amperes v gs = 10v 8v 7v 5v 6v fig. 3. output characteristics @ 125oc 0 2 4 6 8 10 12 14 16 18 20 22 24 26 0 2 4 6 8 10 12 14 16 v ds - volts i d - amperes v gs = 10v 7v 6v 5v fig. 4. r ds(on) normalized to i d = 13a value vs. junction temperature 0.4 0.7 1 1.3 1.6 1.9 2.2 2.5 2.8 3.1 -50 -25 0 25 50 75 100 125 150 t j - degrees centigrade r ds(on) - normalized v gs = 10v i d = 26a i d = 13a fig. 5. r ds(on) norm alized to i d = 13a value vs. drain current 0.8 1 1.2 1.4 1.6 1.8 2 2.2 2.4 2.6 2.8 3 3.2 0 5 10 15 20 25 30 35 40 45 50 55 60 i d - amperes r ds(on) - normalized v gs = 10v t j = 125oc t j = 25oc fig. 6. maximum drain current vs. case temperature 0 2 4 6 8 10 12 14 16 -50 -25 0 25 50 75 100 125 150 t j - degrees centigrade i d - amperes
ixys reserves the right to change limits, test conditions, and dimensions. ixfc 26n50p fig. 7. input admittance 0 5 10 15 20 25 30 35 40 45 50 3.544.555.566.57 v gs - volts i d - amperes t j = 125oc 25oc - 40oc fig. 8. transconductance 0 5 10 15 20 25 30 35 40 45 50 0 5 10 15 20 25 30 35 40 45 50 55 60 i d - amperes g f s - siemens t j = - 40oc 25oc 125oc fig. 9. forward voltage drop of intrinsic diode 0 10 20 30 40 50 60 70 80 0.40.50.60.70.80.9 1 1.1 v sd - volts i s - amperes t j = 125oc t j = 25oc fig. 10. gate charge 0 1 2 3 4 5 6 7 8 9 10 0 5 10 15 20 25 30 35 40 45 50 55 60 65 q g - nanocoulombs v gs - volts v ds = 250v i d = 13a i g = 10ma fig. 11. capacitance 10 100 1,000 10,000 0 5 10 15 20 25 30 35 40 v ds - volts capacitance - picofarads f = 1 mhz c iss c rss c oss fig. 12. forward-bias safe operating area 1 10 100 10 100 1000 v ds - volts i d - amperes t j = 150oc t c = 25oc 25s 1ms 100s r ds(on) limit 10ms dc
? 2006 ixys all rights reserved ixfc 26n50p fig. 13. maximum transient thermal resistance 0.01 0.10 1.00 0.0001 0.001 0.01 0.1 1 10 pulse width - seconds r (th)jc - oc / w ixys ref: t_26n50p (6j) 02-09-06-b.xls
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