?2009 fairchild semiconductor corporation 1 www.fairchildsemi.com FSB67508 rev. a FSB67508 smart power module (spm?) spm october 2009 tm FSB67508 smart power module (spm ? ) features ?r ds(on).max =11m @ i d =38a,t j =25c a half-bridge frfet inverter including high volta ge integrated circuit (hvic) ? negative dc-link terminals for inverter current sensing appli - cations ? hvic for gate driving and protection functions ? 3/5v cmos/ttl compatible, active-high interface ? isolation voltage rating of 1500vrms for 1min. ? embedded bootstrap diode in the package general description FSB67508 is a smart power module (spm ? ) as a compact solution for small power motor drive applications such as e- bike. it is composed of 2 mosfet, and 1 half-bridge hvic for gate driving. this offers an extremely compact, high performance half-bridge inverter in a single isolated package . the package is optimized for the thermal performance and compactness for the use in the built-in motor application and any other application where the as sembly space is concerned. absolute maximum ratings *repetitive rating : pulse width limited by maximum junction temperature symbol parameter conditions rating units v pn dc link input voltage, drain-source voltage of each fet 75 v i d25 each fet drain current, continuous t c = 25c 38 a i d80 each fet drain current, continuous t c = 80c 28 a i dp each fet drain current, peak t c = 25c, pulsed* 95 a p d maximum power dissipation t c = 25c, each 32 w v cc control supply voltage applied between v cc and com 20 v v bs high-side bias voltage applied between v b and u 20 v v in input signal voltage applied between in and com -0.3 ~ vcc v t j operating junction temperature -40 ~ 150 c t stg storage temperature -50 ~ 150 c r jc junction to case thermal resistance each under inverter operating condition (note 1) 3.9 c/w
2 www.fairchildsemi.com FSB67508 rev. a FSB67508 smart power module (spm?) pin descriptions note: source terminal of each low-side mosfet is not connected to supply ground or bias voltage ground inside spm ? . external connections should be made as indicated in figure2. figure 1. internal block diagram pin number pin name pin description 1 p positive dc?link input 2 vs bias voltage ground for high side mosfet driving 3 vb high-side bias voltage for mosfet driving 4 vcc bias voltage for ic and low side mosfet driving 5 hin signal input for high-side 6 lin signal input for low-side 7 com common supply ground 8 nc no connection 9 n negative dc-link input 10 u output com vcc lin hin vb ho lo (4) vcc (5) hin (6) lin (1) p (10) u (9) n (7) com (3) vb vs nc (8) nc (2) vs
3 www.fairchildsemi.com FSB67508 rev. a FSB67508 smart power module (spm?) electrical characteristics (t j = 25c, v cc =v bs =15v unless otherwise specified) inverter part (each mosfet unless otherwise specified) control part (each hvic unless otherwise specified) note: 1. bv dss is the absolute maximum voltage rating between drain and source terminal of each fet inside spm ? . v pn should be sufficiently less than this value considering the effect of the stray inductance so that v ds should not exceed bv dss in any case. 2. t on and t off include the propagation delay time of the internal drive ic. listed values are measured at the laboratory test condition, and they can be different according to the field applcations due to the effect of different printed circuit boards and wirings. please see figure 3 for the switching time definition with the switching test circuit of figure 4. 3. the peak current and voltage of each fet during the switching operation should be included in the safe operating area (soa). please see figure 4 for the rbsoa test circuit that is same as the switching test circuit. package marking & ordering information symbol parameter conditions min typ max units bv dss drain-source breakdown voltage v in = 0v, i d = 250 a (note 2) 75 - - v bv dss / t j breakdown voltage tem - perature coefficient i d = 250 a, referenced to 25c - 0.6 - v i dss zero gate voltage drain current v in = 0v, v ds = 75v - - 250 a r ds(on) static drain-source on-resistance v cc = v bs = 15v, v in = 5v, i d = 15a - 9.4 11 m v sd drain-source diode forward voltage v cc = v bs = 15v, v in = 0v, i d = 15a - - 1.2 v t on switching times v pn = 48v, v cc = v bs = 15v, i d = 15a v in = 0v ? 5v inductive load l=3mh high- and low-side fet switching (note 3) - 550 - ns t off - 2000 - ns t rr - 100 - ns e on - 40 - j e off - 190 - j rbsoa reverse-bias safe oper - ating area v pn = 55v, v cc = v bs = 15v, i d = i dp, v ds =bv dss , t j = 150c high- and low-side fet switching (note 3) full square symbol parameter conditions min typ max units i qcc quiescent v cc current v cc =15v, v in =0v applied between v cc and com - - 160 a i qbs quiescent v bs current v bs =15v, v in =0v applied between v b(u) -u, v b(v) -v, v b(w) -w - - 100 a uv ccd low-side undervoltage protection (figure 6) v cc undervoltage protection detection level 7.4 8.0 9.4 v uv ccr v cc undervoltage protection reset level 8.0 8.9 9.8 v uv bsd high-side undervoltage protection (figure 7) v bs undervoltage protection detection level 7.4 8.0 9.4 v uv bsr v bs undervoltage protection reset level 8.0 8.9 9.8 v v ih on threshold voltage logic high level applied between in and com 3.0 - - v v il off threshold voltage logic low level - - 0.8 v i ih input bias current v in = 5v applied between in and com - 10 20 a i il v in = 0v - - 2 a device marking device package reel size tape width quantity FSB67508 FSB67508 spm10-aa _ _ 19
4 www.fairchildsemi.com FSB67508 rev. a FSB67508 smart power module (spm?) recommended oper ating conditions note: (1) the snubber capacitor, c3, should be placed near spm ? (2) parameters for bootsrap circuit elements are dependent on pwm algorithm. for 15 khz of switching frequency, typical example of parameters is shown above. (3) rc coupling(r 5 and c 5 ) at each input (indicated as dotted lines) may be used to prevent improper input signal due to surge noise. signal input of spm ? is compatible with standard cmos or lsttl outptus. (4) bold lines should be short and thick in pcb pattern to have small stray inductance of circuit, which results in the reductio n of surge voltage. bypass capacitors such as c 1 , c 2 and c 3 should have good high-frequency characteristics to absorb high-frequency ripple current. figure 2. recommended cpu interface and bootstrap circuit with parameters bootstrap diode part symbol parameter conditions value units min. typ. max. v pn supply voltage applied between p and n - 48 60 v v cc control supply voltage applied between v cc and com 13.5 15 16.5 v v bs high-side bias voltage applied between v b and output 13 15 16.5 v v in(on) input on threshold voltage applied between in and com 3.0 - v cc v v in(off) input off threshold voltage 0 - 0.6 v t dead blanking time for preventing arm-short v cc =v bs =13.5 ~ 20v, t j 150c 1.0 - - s f pwm pwm switching frequency t j 150c - 15 - khz symbol parameter conditions rating units v rrm maixmum repetitive reverse voltage 75 v i f forward current t c = 25c 0.5 a i fp forward current (peak) t c = 25c, under 1ms pulse width 2 a t j operating junction temperature -40 ~ 150 c r b equivalent bootstrap resistance t c = 25c 15 r 3 inverter output c 3 c 1 micom 15-v line 10 f these values depend on pwm control algorithm * example of bootstrap paramters: c 1 = c 2 = 1 f ceramic capacitor, r 5 c 5 v dc c 2 com vcc lin hin vb ho lo p u n vs nc vs p n hin lin 0 0 0 1 1 0 1 1 open open output z 0 v dc forbidden z note both fet off low-side fet on high-side fet on shoot-through same as (0, 0) fo 1 1 1 1 1 x x z same as (0, 0) 0
5 www.fairchildsemi.com FSB67508 rev. a FSB67508 smart power module (spm?) figure 3. switching time definition figure 4. switching and rbsoa(si ngle-pulse) test circuit (low-side) figure 5. undervoltage protection (low-side) figure 6. undervoltage protection (high-side) t on t rr i rr 100% of i d 120% of i d (a) turn-on t off (b) turn-off i d v ds v ds i d v in v in 10% of i d i d v cc l v dc + v ds - com vcc lin hin vb ho lo p u n vs nc vs c bs one-leg diagram of spm uv ccd uv ccr input signal uv protection status low-side supply, v cc mosfet current reset detection reset uv bsd uv bsr input signal uv protection status high-side supply, v bs mosfet current reset detection reset
6 www.fairchildsemi.com FSB67508 rev. a FSB67508 smart power module (spm?) fig. 7. example of application circuit note: built in bootstrap diode includes around 15 ? resistance characteristic. figure 8. built in bootstrap diode characteristics (4) vcc (5) hin (6) lin (1) p (7) com (3) vb (8) nc (10) u (9) n com vcc lin hin vb ho lo vs nc (2) vs (4) vcc (5) hin (6) lin (1) p (7) com (3) vb (8) nc (10) v (9) n com vcc lin hin vb ho lo vs nc (2) vs (4) vcc (5) hin (6) lin (1) p (7) com (3) vb (8) nc (10) w (9) n com vcc lin hin vb ho lo vs nc (2) vs micom m c 3 v dc r 3 r 4 c 4 r 5 c 5 for 3-phase current sensing and protection c 2 c 2 c 2 +15v supply 0123456789101112131415 0.0 0.1 0.2 0.3 0.4 0.5 0.6 0.7 0.8 0.9 1.0 built in bootstrap diode v f -i f characteristic t c =25 i f [a] v f [v]
7 www.fairchildsemi.com FSB67508 rev. a FSB67508 smart power module (spm?) detailed package outline drawings
? 2008 fairchild semiconductor corporation www.fairchildsemi.com trademarks the following includes registered and unregistered trademarks and se rvice marks, owned by fairchild semiconductor and/or its gl obal subsidiaries, and is not intended to be an exhaustive list of all such trademarks. accupower ? auto-spm ? build it now ? coreplus ? corepower ? crossvolt ? ctl? current transfer logic? ecospark ? efficentmax? ezswitch?* ?* ? fairchild ? fairchild semiconductor ? fact quiet series? fact ? fast ? fastvcore ? fetbench ? flashwriter ? * fps ? f-pfs ? frfet ? global power resource sm green fps ? green fps ? e-series ? g max ? gto ? intellimax ? isoplanar ? megabuck? microcoupler ? microfet ? micropak ? millerdrive? motionmax? motion-spm? optologic ? optoplanar ? ? pdp spm? power-spm ? powertrench ? powerxs? programmable active droop ? qfet ? qs ? quiet series ? rapidconfigure ? ? saving our world, 1mw/w/kw at a time? smartmax? smart start ? spm ? stealth? superfet ? supersot ? -3 supersot ? -6 supersot ? -8 supremos? syncfet? sync-lock? ? * the power franchise ? tinyboost ? tinybuck ? tinycalc ? tinylogic ? tinyopto ? tinypower ? tinypwm ? tinywire ? trifault detect ? truecurrent ? * serdes ? uhc ? ultra frfet ? unifet ? vcx ? visualmax ? xs? * trademarks of system general corporation, used under license by fairchild semiconductor. disclaimer fairchild semiconductor reserves the right to make changes without further notice to any products herein to improve reliability, function, or design. fairchild does not assume any liability arising out of the application or use of any product or circuit described herein; neither does it convey any license under its patent rights, nor the rights of others. these specifications do not expand the terms of fairchild?s worldwide terms and conditions, specifically the warranty therein, which covers these products. life support policy fairchild?s products are not authorized for use as critical co mponents in life support devices or systems without the express written approval of fairchild semiconductor corporation. as used herein: 1. life support devices or systems are devices or systems which, (a) are intended for surgical implant into the body or (b) support or sustain life, and (c) whose failure to perform when properly used in accordance with instructions for use provi ded in the labeling, can be reasonably expected to result in a significant injury of the user. 2. a critical component in any component of a life support, device, or system whose failure to perform can be reasonably expected to cause the failure of the life support device or system, or to affect its safety or effectiveness. anti-counterfeiting policy fairchild semiconductor corporation's anti-counterfeiting policy. fairchild's anti-counterfeiting policy is also stated on our external website, www.fairchildsemi.com, under sales support. counterfeiting of semiconductor parts is a growing problem in t he industry. all manufacturers of semiconductor products are exp eriencing counterfeiting of their parts. customers who inadvertently purchase counter feit parts experience many problems such as loss of brand reputation, substandard p erformance, failed applications, and increased cost of production and manufacturing delays. fairchild is taking strong measures to protect ourselves and our cus tomers from the proliferation of counterfeit parts. fairchild strongly encourages customers to purchase fairchild parts eit her directly from fairchild or from a uthorized fairchild distributors who are listed by country on our web page cited above. products customers buy either from fairchild directly or from authorized fairchi ld distributors are genuine parts, have full traceability, meet fairch ild's quality standards for handling and storage and pr ovide access to fair child's full range of up-to-date technical and product information. fairchild and our authorized distributors will stand behind all warranties and will appropr iately address any warranty issues t hat may arise. fairchild will not provide any warranty coverage or other assistance for parts bought from u nauthorized sources. fairchild is committed to combat this glo bal problem and encourage our customers to do their part in stopping this practice by buying direct or from authorized distributors. product status definitions definition of terms datasheet identification product status definition advance information formative / in design datasheet contains the design s pecifications for product developmen t. specifications may change in any manner without notice. preliminary first production datasheet contains preliminary data; supplementary data will be published at a later date. fairchild semiconductor reserves the right to make changes at any time without notice to improve design. no identification needed full production datasheet contains final specific ations. fairchild semiconductor rese rves the right to make changes at any time without notice to improve the design. obsolete not in production datasheet contains specificati ons on a product that is disconti nued by fairchild semiconductor. the datasheet is for reference information only. rev. i41
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