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specification item white side view led m o d e l s z a f 0 7 cust o m e r customer appr ov ed by appr ov ed by appr ov ed by / / / supplier dr awn by check e d by appr ov ed by / / / seoul se miconductor co. , ltd.
rev. 1.00 sz a f07 contents 1. f e atures 2. applications 3. absolute maximum r a tings 4. electr o -optical char acteristics 5. cie chromaticit y diagr a m 6. char acteristic diagr a m 7. r e liabilit y 8. pr ecautions 9. soldering p r of ile 10. outli n e di mension 11. p a cking 12. r eel p a cking structure 13. history 02 02 03 03 04 06 09 10 11 12 13 14 15 seoul semiconduc tor co., ltd. 1 ssc-qp - 7 - 03 -44( ? )
rev. 1.00 sz a f07 1. featu r es p a ckage: s m t solder abilit y dimension : 3 . 8 1.05 0.6 (mm) low th ermal r e sist ance r o hs compliant, l e ad fr ee suitable f o r s m all applications high esd v o lt age own p a ten t r e ser v ed SZAF07 is v e ry usef ul side view l e d in back light unit application 2. applicat ions flat backlighti n g (l cd , disp lay) mobile phon e , camer a , pd a, noteb ook coupling into light guide p a nel av s y s t e m s seoul semiconduc tor co., ltd. 2 ssc-qp - 7 - 03 -44( e )
rev. 1.00 sz a f07 3. absolute maximu m ratings ( t a = 2 5 v f i f = 20 ma 3 . 3 - 3. 7 v r e v e rse curr ent i r v r = 5 v - - 5 0 a r a nk i8 800 - 900 r a nk i9 900 - 1000 r a n k j 0 1 0 0 0 - 1 1 0 0 r a n k j 1 1 1 0 0 - 1 2 0 0 r a n k j 2 1 2 0 0 - 1 3 0 0 luminous i n tensit y *1 ra n k j 3 i v i f = 20 ma 1 3 0 0 - 1 4 0 0 mcd viewing angle *2 2 i f = 20 ma 120 x 0 . 2 6 4 - 0 . 2 9 6 ra n k b y 0 . 2 4 8 - 0 . 2 9 5 x 0 . 2 8 7 - 0 . 3 1 1 ra n k e y 0 . 2 7 6 - 0 . 3 1 5 x 0 . 3 0 7 - 0 . 3 3 0 color coor dinates *3 ra n k f y i f = 20 ma 0 . 2 9 4 - 0 . 3 3 9 * 1 lum i no us i n ten s i t y i v is m e as u r ed a t t h e p e ak of t h e s p at ia l p a tt e r n wh ic h m a y n o t b e al i g n e d w i t h t h e m e ch an ic al a x i s o f t h e l e d p a ckag e. lum i n o us in ten s it y me asurem e n t a l low a nce i s 10%. *2
rev. 1.00 sz a f07 5. cie chromaticity diagram 0. 0 0 . 1 0. 2 0 . 3 0 . 4 0 . 5 0. 6 0 . 7 0. 8 0. 0 0. 1 0. 2 0. 3 0. 4 0. 5 0. 6 0. 7 0. 8 0. 9 460 470 475 480 485 490 495 500 505 510 515 520 525 530 535 540 545 550 555 560 565 570 575 58 0 585 590 595 600 610 620 630 830 y co ord . x c o o r d . 0. 24 0 . 2 6 0 . 2 8 0. 30 0. 32 0 . 3 4 0. 36 0. 38 0. 22 0. 24 0. 26 0. 28 0. 30 0. 32 0. 34 0. 36 0. 38 0. 40 h g e f b d y coord . x c o o r d . c
rev. 1.00 sz a f07 6. characteristic diagram forw ard current vs. forw ard voltage intensity vs. forward c u rrent forw ard current vs. amb i ent temperature radiation diagram 0 5 10 15 20 25 30 35 0 200 400 600 800 1000 1200 1400 1600 1800 t a = 25 o c int e nsit y [ mc d ] forwa r d cu rr en t [ ma ] 2. 5 2 . 6 2.7 2 . 8 2. 9 3 .0 3. 1 3 . 2 3. 3 3 .4 1 10 t a = 25 o c f o rwa r d cu rrent [ ma ] for w a r d volt ag e [ v ] y x 1 53 0 4 56 0 7 59 - 3 0 - 1 5 0 0 0 5 10 15 20 25 30 fo rward curren t [ ma ] am bient tem p era t ure [ o c ] - 1 0 0 - 8 0 - 60 - 4 0 - 20 0 2 0 4 0 6 0 8 0 100 0. 0 0. 5 1. 0 t a = 25 o c x axi s y ax is in t e n s it y the t a seoul semiconduc tor co., ltd. 5 ssc-qp - 7 - 03 -44( ? )
rev. 1.00 sz a f07 color coordi nat e v s . f o r w a r d c u r r e n t spectrum forward voltage vs. am bient temp erature color coordinate vs. a m bient tem p erature 0. 274 0. 276 0.278 0. 280 0.263 0.264 0.265 0.266 t a = 25 o c 1 ma 30 ma y co ord. x c oord. 400 50 0 600 700 80 0 t a = 25 o c i f = 20 ma in t e nsit y [ % ] wavele ngth [ nm ] 0.274 0. 276 0. 278 0. 2 8 0 0. 263 0. 264 0. 265 0. 266 t a = 25 o c 1 ma 30 ma y coo rd . x co or d. -45 - 30 -15 0 15 30 45 60 75 90 0.94 0.96 0.98 1.00 1.02 1.04 1.06 i f = 20 ma v f / v f [2 5 o c ] a m b i en t t e m p er at u r e [ o c ] seoul semiconduc tor co., ltd. 6 ssc-qp - 7 - 03 -44( ? )
rev. 1.00 sz a f07 relati ve luminosity vs. am b i ent t e mper atur e allowab l e for w ar d c u rr ent vs. dut y ratio - 3 0 - 1 5 0 1 53 0 4 5 6 07 5 9 0 0. 7 0. 8 0. 9 1. 0 1. 1 1. 2 i v / i v [2 5 o c ] am b i ent te m p e r ature [ o c ] 1 1 0 100 20 40 60 80 100 120 t a = 25 o c allo wable fo rward current [ ma ] duty rati o [ % ] seoul semiconduc tor co., ltd. 7 ssc-qp - 7 - 03 -44( ? )
rev. 1.00 sz a f07 7. reliability (1) test it ems and resul t s test item test conditions note num b er of damaged reference lif e t e st 1 t a = 25 c; i f = 20 ma 1000 hr 0/20 eiaj ed -4701 100 101 lif e t e st 2 t a = 25 c; i f = 30 ma 500 hr 0/20 eiaj ed -4701 100 101 therm a l shoc k -30 c ~ 85 c (30 mi n) (30 mi n) 20 cy cle 0/50 eiaj ed -4701 300 307 high t e mper atur e lif e t e st t a = 85 c; i f = 5 ma 1000 hr 0/20 - low t e mper atur e lif e t e st t a = - 30 c; i f = 20 ma 1000 hr 0/20 - high t e mper atur e stor age t a = 100 c 1000 hr 0/50 eiaj ed -4701 200 201 low t e mper atur e stor age t a = - 40 c 1000 hr 0/50 eiaj ed -4701 200 202 high humidit y hea t lif e t e st t a = 60 c; rh = 90%, i f = 20 ma 500 hr 0/20 eiaj ed -4701 100 102 humidit y hea t load t a = 60 c; rh = 90% 1000 hr 0/50 eiaj ed -4701 100 103 r e sist ance to soldering he at t sld = 260 c, 10 sec pr e tr eatment ; 30 c, 70%, 168 hr 2 time 0/50 eiaj ed -4701 301 302 solder abilit y (r eflo w solderi n g) t sld = 215 5 c, 3 sec (lead solder) 1 time ov er 95% 0/50 eiaj ed -4701 303 t e mper atur e cy cle - 40 c ~ 25 c ~ 100 c ~ 2 5 c (30 mi n) (5 mi n) (30 mi n) (5 mi n) 100 cy cle 0/50 eiaj ed -4701 100 105 moi stur e r e si st ance cy cle 25 c ~ 65 c ~ - 10 c rh = 90%, 2 4 hr / 1 cy cle 10 cy cle 0/50 eiaj ed -4701 200 203 (2) criteria for j u dg ing the da mage criter ia for judgment i t e m s y m b o l t e s t c o n d i t i o n m i n . m a x . fo r w a r d v o l t a g e v f i f = 20 ma - u . s . l 1.2 r e v e rse curr ent i r v r = 5 v - u . s . l 2.0 luminous i n tensit y i v i f = 20 ma l.s . l 0.5 - u . s . l. : upper st andar d lev e l , l.s . l. : low e r st andar d lev e l seoul semiconduc tor co., ltd. 8 ssc-qp - 7 - 03 -44( e )
rev. 1.00 sz a f07 8. precautions (1) stor age con d itions k eep the pr oduct in a dry box or a desi ccator with a desic c ant in or der to pr ev e n t moistur e absorpti on. a. k eep it at a t e mper atur e i n the r a nge f r om 5 c to 30 c and at a hu midit y of less than 60% r h . i n case of being stor ed f o r mor e than 3 month s , th e pr oduct sh ould be sealed with nitr ogen gas. (2) after op enin g th e p a cka g e when solderi n g, this c o uld r e sult in a decr ease of th e photoelectric ef f e ct or light intensit y . a. soldering should be done right after m o unting the pr oduct. b. k eep the tem p er atur e in th e r a nge f r om 5 c to 40 c and the humidi t y at less th an 30%. soldering should be done within 7 days after op ening the desi ccant package. if the pr oduct has been exposed f o r mor e than 7 day s af ter openi n g the package or th e indi cating c o lor of the desicc ator chang e s , the pr oduct mu st be bak e d at a temper atur e between 60 c and 65 c f o r 10 to 12 hours. an unused and unsealed pr oduct sh ould be r e pack ed in a desicc ant pack age and k e pt sealed in a dr y atmo spher e . ( 3 ) pr e c au t i on s f o r u s e an y external mechanic al f o r c e or exc e ssi v e vibr a tion should not be applied to the pr oduct duri ng cooling after soldering, and it is pr ef er able to av oid r a pid cool ing. the pr oduct should not be mounted on a distorted part of pcb . g l o v e s o r w r i s t b a n d s f o r e s d ( e l e c t r i c s t a t i c d i s c h a r g e ) s h o u l d b e w o r e i n o r d e r t o p r e v e n t e s d a n d sur g e damag e , and all dev i ces and equi pmen ts mu st be gr ounded to the earth . (4) miscellaneous r a diation r e si stance is n o t consider ed. when cleanin g the pr oduc t, an y kind of fluid such as w a ter , oil and or ganic solv ent must not be used and ip a(i s opr o pyl alcohol) must be used . when u s ing the pr oduct, oper ating curr ent sh ould be settled in c o nsider ation of the maxim u m ambient temper atur e. its appe ar anc e or spe c if ication f o r impr o v ement i s sub j ect t o chang e without n o ti ce. seoul semiconduc tor co., ltd. 9 ssc-qp - 7 - 03 -44( e )
- 7 - 03 -44( e ) rev. 1.00 sz a f07 9. soldering profile the led c a n be solder ed i n place using the r e flow sol d ering method. (1) lead solder pr eliminary heating to be at maximum 210 seoul semiconduc tor co., ltd. 10 ssc-qp
rev. 1.00 sz a f07 1 0 . o u t l i n e d i m e n s i o n ( t o ler a nce : 0.2 , unit : mm ) seoul semiconduc tor co., ltd. 11 ssc-qp - 7 - 03 -44( ? ) [bottom view] c a thode an ode
rev. 1.00 sz a f07 1 1 . p a c k i n g ( t o ler a nce : labe l 180 13 0 .3 60 22 2 0 .2 +1 -0 15.4 13 +0 -3 -0 +0. 2 1 . 0 12 .0 0 . 0 2 4. 0 0. 1 +0 . 1 -0 2. 0 0. 05 4. 0 0. 1 section b - b' seoul semiconduc tor co., ltd. 12 ssc-qp - 7 - 03 -44( ? )
rev. 1.00 sz a f07 12. reel packing structure l o t n u m b e r : xx xxxxxx ss c p a r t n u m be r : xxxxxxxx mat e r i al : pape r ( s w3b( b) ) seou l s e m i co nd uc t o r e c ol ig h t 245 ( m m ) acriche ro h s tu v 220 ( m m ) ma d e i n k o r e a ty p e 7inch 142 ( mm) s i z e ( mm) 245 2 2 0 245 2 2 0 a b 14 2 80 c reel ba r c o d e l a b e l quanti t y : xxxx rank : oute r box st ruct ur e xxx hu mi d i ty i n di cat o r d e sic cant a l u minum vinyl ba g sw bk 07 x lot number SZAF07 s y m b o l m e a n i n g e x a m p l e ye a r 8 f o r 2008, 9 f o r 2009, 10 f o r 2010 EE month 01 f o r jan. , 0 2 f o r f e b . , EE day 01, 02, 03, 0 4 , 05, EE number 001, 002, 00 3, 004 , 005, 006, 007 EE seoul semiconduc tor co., ltd. 13 ssc-qp - 7 - 03 -44( e )
rev. 1.00 sz a f07 13. histor y rev. no. contents date 1.00 - the in stituti o n of new sp ec. 2008. 05.16 published by seoul semiconductor co., ltd. http://www.seoulsem i con.com 148-29, ga san-dong, geumcheon-gu, seoul, 153-801. south korea ? all right reserved. seoul semiconduc tor co., ltd. 14 ssc-qp - 7 - 03 -44( ? )

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