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| product specification www.jmnic.com silicon npn power transistors 2SC4004 description ? with to-220fa package ? satisfactory linearity of fowa rd current transfer ratio h fe ? wide area of safe operation (aso) ? high-speed switching ? high collector to base voltage v cbo applications ? for high breakdown voltage high-speed switching pinning fig.1 simplified outline (to-220fa) and symbol absolute maximum ratings at tc=25 ?? symbol parameter conditions value unit v cbo collector-base voltage open emitter 900 v v ceo 900 v v ces collector-emitter voltage open base 800 v v ebo emitter-base voltage open collector 7 v i c collector current (dc) 1 a i cm collector current-peak 2 a i b base current 0.3 a t c =25 ?? 30 w p c collector power dissipation t a =25 ?? 2 w t j junction temperature 150 ?? t stg storage temperature -55~150 ?? jmnic pin description 1 base 2 collector 3 emitter
product specification www.jmnic.com jm nic silicon npn power transistors 2SC4004 characteristics tj=25 ?? unless otherwise specified symbol parameter conditions min typ. max unit v ceo collector-emitter breakdown voltage i c =1ma , i b =0 800 v v cesat collector-emitter saturation voltage i c =0.2a i b =0.04a 1.5 v v besat base-emitter saturation voltage i c =0.2a i b =0.04a 1.0 v i cbo collector cut-off current v cb =900v i e =0 50 | a i ebo emitter cut-off current v eb =7v; i c =0 50 | a h fe-1 dc current gain i c =0.05a ; v ce =5v 6 h fe-2 dc current gain i c =0.5a ; v ce =5v 3 f t transition frequency i c =0.05a; v ce =10v;f=1mhz 4 mhz switching times t on turn-on time 1.0 | s t s storage time 3.0 | s t f fall time i c =0.2a ;i b1 =0.04a i b2 =-0.04a; v cc =250v 1.0 | s product specification www.jmnic.com jm nic silicon npn power transistors 2SC4004 package outline fig.2 outline dimensions (unindicated tolerance: ? 0.15 mm) |
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