cjd31c npn CJD32C pnp surface mount complementary silicon power transistors description: the central semiconductor cjd31c, CJD32C types are complementary silicon power transistors manufactured by the epitaxial base process, mounted in a surface mount package designed for power amplifier and high speed switching applications. marking: full part number dpak transistor case maximum ratings: (t c =25c unless otherwise noted) symbol units collector-base voltage v cbo 100 v collector-emitter voltage v ceo 100 v emitter-base voltage v ebo 5.0 v continuous collector current i c 3.0 a peak collector current i cm 5.0 a continuous base current i b 1.0 a power dissipation p d 15 w power dissipation (t a =25c) p d 1.56 w operating and storage junction temperature t j , t stg -65 to +150 c thermal resistance jc 8.33 c/w thermal resistance ja 80.1 c/w electrical characteristics: (t c =25c unless otherwise noted) symbol test conditions min max units i ceo v ce =60v 50 a i ces v ce =100v 20 a i ebo v eb =5.0v 1.0 ma bv ceo i c =30ma 100 v v ce(sat) i c =3.0a, i b =375ma 1.2 v v be(on) v ce =4.0v, i c =3.0a 1.8 v h fe v ce =4.0v, i c =1.0a 25 h fe v ce =4.0v, i c =3.0a 10 50 f t v ce =10v, i c =500ma, f=1.0mhz 3.0 mhz h fe v ce =10v, i c =500ma, f=1.0khz 20 r2 (4-january 2010) www.centralsemi.com
cjd31c npn CJD32C pnp surface mount complementary silicon power transistors dpak transistor case - mechanical outline lead code: b) base c) collector e) emitter c) collector marking: full part number www.centralsemi.com r2 (4-january 2010)
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