2012. 5. 23 1/1 semiconductor technical data e35a27vbcs, E35A27VBCR stack silicon diffused diode revision no : 0 alternator diode for automotive application. features h average forward current : i o =35a. h zener voltage : 27v(typ.) polarity e35a27vbcs (+ type) E35A27VBCR (- type) maximum rating (ta=25 ? ) dim millimeters c-pf 9.55 max *note 10.1 +0.09-0.00 1.3 0.04 3.2 0.2 6.2 0.1 typ 0.4 8.66 0.2 0.389 0.1 x 45 0.2+0.1 a 6.7 max h b c d e f g h i j 6.10(+0, -0.03) l k f e i d g l b j k a + _ + _ + _ + _ + _ *note characteristic symbol test condition min. typ. max. unit forward voltage v f i fm =100a - - 1.10 v zener voltage v z i z =10ma 24 27 29 v reverse current i r v r =20v - - 0.2 a transient thermal resistance v f i fm =100a, i m =100ma, pw=100ms - - 80 mv breakdown voltage v br i rsm =42a, pw=10ms - - 34 v temperature coefficient ? t i z =10ma - 15.7 - mv/ ? reverse leakage current under high temperature hi r ta=150 ? , v r =20v - - 100 a temperature resistance r th dc total junction to case - - 0.8 ? /w characteristic symbol rating unit average forward current i f(av) 35 a peak 1 cycle surge current i fsm 300 (60hz) a non-repetitive peak reverse surge current (10ms) i rsm 42 a transient peak reverse voltage v rsm 22 v peak reverse voltage v rm 20 v junction temperature t j -40 q 215 ? storage temperature range t stg -40 q 215 ? item length(k) e35a27vbcs 20.35 ? 0.5 E35A27VBCR 28.35 ? 0.5 electrical characteristics (ta=25 ? )
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